JPS63217513A - Formation of terminal electrode of thin film magnetic head - Google Patents
Formation of terminal electrode of thin film magnetic headInfo
- Publication number
- JPS63217513A JPS63217513A JP5106087A JP5106087A JPS63217513A JP S63217513 A JPS63217513 A JP S63217513A JP 5106087 A JP5106087 A JP 5106087A JP 5106087 A JP5106087 A JP 5106087A JP S63217513 A JPS63217513 A JP S63217513A
- Authority
- JP
- Japan
- Prior art keywords
- film
- terminal electrode
- plating
- thickness
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- 238000007747 plating Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 21
- 239000010408 film Substances 0.000 abstract description 84
- 230000001681 protective effect Effects 0.000 abstract description 29
- 239000004020 conductor Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000004804 winding Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 235000001018 Hibiscus sabdariffa Nutrition 0.000 description 1
- 235000005291 Rumex acetosa Nutrition 0.000 description 1
- 240000007001 Rumex acetosella Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 235000003513 sheep sorrel Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜磁気ヘッドの端子電極の形成方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming terminal electrodes of a thin film magnetic head.
本発明は薄膜磁気ヘッドの端子電極の形成において、パ
ターンレジストの膜厚を、端子電極を形成するメッキ厚
の １／１０以下に形成することにより、保護膜形成時
の端子電極のカバーリングが良好に行われるようにした
ものである。In forming the terminal electrodes of a thin-film magnetic head, the present invention provides good covering of the terminal electrodes when forming the protective film by forming the pattern resist film thickness to be 1/10 or less of the plating thickness forming the terminal electrodes. It was designed to be carried out in
従来、薄膜磁気ヘッドは第２図に示す如く構成されてい
る。Conventionally, a thin film magnetic head has been constructed as shown in FIG.
第２図において（１）は薄膜磁気ヘッドを全体として示
し、（２）はフェライト等により成る基板で、この基板
（２）上に５ｔ０２等の非磁性絶縁膜（３ａ）を介して
導体膜により成るコイル巻線（４）が形成され、さらに
このコイル巻線（４）上に絶縁層（３ｂ）を介してセン
ダスト等により成る磁性膜（５）が形成されζおり、こ
の磁性ＩＩＩ （５）の後部はコイル巻線（４）の中央
部に位置して基板（２）に直接接合され、前部は基板（
２）の前部に絶縁膜（３ａ）を介して積層されてこの磁
性膜（５）と基板（２）間の前端部に絶縁膜（３ａ）の
厚みの磁気ギャップＧが形成されてヘッド部（１ａ）が
構成されている。In Fig. 2, (1) shows the thin film magnetic head as a whole, and (2) is a substrate made of ferrite or the like, and a conductive film is formed on this substrate (2) via a non-magnetic insulating film (3a) such as 5T02. A coil winding (4) consisting of The rear part is located in the center of the coil winding (4) and is directly joined to the board (2), and the front part is connected to the board (2).
2) is laminated with an insulating film (3a) in between, and a magnetic gap G with the thickness of the insulating film (3a) is formed at the front end between this magnetic film (5) and the substrate (2). (1a) is configured.
また基板（２）の後部上には絶縁膜（３ａ）を介してコ
イル巻線（４）と連続する引出し導体（６）が形成され
、この引出し導体（６）の端部に外部電気回路が接続さ
れる如くなされ、端子部（１ｂ）が形成されている。Further, on the rear part of the substrate (2), a lead-out conductor (6) is formed which is continuous with the coil winding (4) via an insulating film (3a), and an external electric circuit is connected to the end of this lead-out conductor (6). A terminal portion (1b) is formed so as to be connected.
そしてこのｉｌｌ磁気ヘッド（１１においては、ヘッド
部（１ａ）の保護のために、硬質な絶縁物、例えばＡｌ
２Ｏ３、５ｉ０２＋ガラス等によって基板（２）の上部
全面に保護膜（７）を被着形成している。In this ill magnetic head (11), a hard insulator such as Al is used to protect the head portion (1a).
A protective film (7) is formed on the entire upper surface of the substrate (2) using 2O3, 5i02+ glass, or the like.
この保護膜（７）の膜厚は、その性質上数十μｍもの厚
みを必要とするため、端子部（１ｂ）における引出し導
体（６）の端部には外部電気回路と接続するために、保
護膜（７）の膜面上に表出する端子電極（８）が形成さ
れている。Because the protective film (7) requires a thickness of several tens of micrometers due to its nature, the end of the lead conductor (6) in the terminal portion (1b) is provided with a A terminal electrode (8) is formed exposed on the film surface of the protective film (7).
このように構成される薄膜磁気ヘッド（１）における端
子部（１ｂ）の端子電極（８）の形成方法の一例を第３
図を参照して説明する。An example of the method for forming the terminal electrode (8) of the terminal portion (1b) in the thin film magnetic head (1) configured as described above is described in the third section.
This will be explained with reference to the figures.
先ず同図Ａに示すように、基板（２）の引出し導体（６
）上にメッキ下地膜（９）を形成する。First, as shown in Figure A, the lead conductor (6) of the board (2) is
) A plating base film (9) is formed on the plating base film (9).
次に、同図Ｂのように端子電極形成箇所を残してメッキ
下地膜（９）上にパターンレジスト（１０）を数十μ閣
の膜厚で塗布パターンニングする。Next, as shown in Figure B, a pattern resist (10) is applied and patterned to a film thickness of several tens of micrometers on the plating base film (9), leaving the terminal electrode forming area.
そして同図Ｃに示す如く、このパターンレジスト（１０
）が形成されていない部分にパターンレジスト（１０）
の膜厚と同等のメッキ膜（１１）を成長させる。As shown in Figure C, this pattern resist (10
) is not formed in the pattern resist (10)
A plating film (11) having a thickness equivalent to that of is grown.
このようにしてメッキ膜（１１）を形成した後、同図り
の如くパターンレジスト（１０）を剥離し、次いでその
下のメッキ下地膜（９）をエツチングによって除去する
と、引出し導体（６）上にメッキＦＪ（１１）のみが残
存し、即ち引出し導体（６）の外部接Ｖｔ端に端子電極
（８）が固着形成される。After forming the plating film (11) in this way, the pattern resist (10) is peeled off as shown in the figure, and the plating base film (9) underneath is removed by etching, resulting in a pattern on the lead-out conductor (6). Only the plating FJ (11) remains, that is, the terminal electrode (8) is fixedly formed on the external contact Vt end of the lead-out conductor (6).
そして以上のようにして端子電橋（８）が形成された状
態で同図Ｅのように薄膜磁気ヘッドの基板（２）の上面
の端子電極（８）を含む全面に、Ａｌ２Ｏ３、ＳｉＯ２
゜ガラス等により成る保護膜（７）をスパッタ、あるい
は蒸着によって数十μｍの膜厚で成膜し、その後ラッピ
ング等の加工によって端子電極（８）上の保護膜（７）
を切削し端子電極（８）の頭部を露出させることにより
前述した薄膜磁気ヘッドを得る。Then, with the terminal bridge (8) formed as described above, Al2O3, SiO2
゜A protective film (7) made of glass or the like is formed to a thickness of several tens of micrometers by sputtering or vapor deposition, and then the protective film (7) is formed on the terminal electrode (8) by processing such as lapping.
The above-mentioned thin film magnetic head is obtained by cutting and exposing the head of the terminal electrode (8).
以上のような従来の薄膜磁気ヘッドの端子電極の形成方
法において問題となるのは、端子電極（８）は数十μｍ
もの膜厚で周面が垂直状に形成されるので、その上面部
と引出し導体（６）間には大きな垂直状段差を有し、こ
のため保護膜（７）を形成する際にこの段差部でのカバ
ーリングが悪く、即ち、第３図Ｅ中に示す如く保護膜（
７）に端子電極（８）の周りでクランクや欠は部ａが生
じる状態となり、充分なカバーリングを行なうことがで
きず、このためこのクランクや欠は部から端子電極（８
）と保護膜（７）間の隙間に塵埃が入り込んだり、端子
電極（８）が剥離し易くなる等の不具合がある。The problem with the conventional method of forming the terminal electrodes of thin film magnetic heads as described above is that the terminal electrodes (8) have a thickness of several tens of μm.
Since the circumferential surface is vertically formed with a film thickness of 100%, there is a large vertical step between the top surface and the lead-out conductor (6), and therefore, when forming the protective film (7), this step is In other words, as shown in Figure 3E, the protective film (
7), a crank or chipped part a is formed around the terminal electrode (8), and sufficient covering cannot be performed.
) and the protective film (7), and the terminal electrode (8) tends to peel off.
しかも、パターンレジスト（１０）の形成工程において
は、数十μｍもの膜厚のパターンレジスト（１０）を精
度よ（形成することは難しく、同図Ｃのようにパターン
レジスト（１０）が端子電極（８）のメッキ膜厚より薄
い場合には端子電極（８）はその上部の周縁部がパター
ンレジスト（１０）の上面にはみ出すように成長してい
わゆるオーバーハング部（８ａ）が生じ、このため保護
膜（７）にはさらにクランクや欠けが生じ易くなり、端
子電極（８）に対するカバーリングが一層悪化すること
になる。Moreover, in the process of forming the pattern resist (10), it is difficult to accurately form the pattern resist (10) with a film thickness of several tens of micrometers. If the plating film thickness is thinner than 8), the terminal electrode (8) will grow so that its upper peripheral edge protrudes over the top surface of the pattern resist (10), creating a so-called overhang part (8a), which makes it difficult to protect the terminal electrode (8). The membrane (7) becomes more prone to cracking and chipping, and the covering of the terminal electrode (8) becomes even worse.
これを解決するためには、基板（２）にバイアス電圧を
印加することにより保護膜（１１）のカバーリングを改
善する方法もあるが、この場合には膜成長速度が極端に
低下したり、膜応力が増大するといった欠点が生じ、生
産性、歩留りの点で問題がある。In order to solve this problem, there is a method to improve the covering of the protective film (11) by applying a bias voltage to the substrate (2), but in this case, the film growth rate may be extremely reduced, There is a drawback that film stress increases, which causes problems in terms of productivity and yield.
本発明は斯る点に鑑みてなされたもので、ｉｌ！磁気ヘ
ッドの端子電極の形成工程においてパターンレジストの
厚みを制御することにより、端子電極上に形成される保
護膜のカバーリングを改善しようとするものである。The present invention has been made in view of these points, and is based on il! The present invention attempts to improve the covering of the protective film formed on the terminal electrodes by controlling the thickness of the pattern resist in the process of forming the terminal electrodes of the magnetic head.
〔問題点を解決するための手段〕
即ち、本発明は薄膜磁気ヘッドの端子電極を形成する際
に、パターンレジストを端子電極メッキ厚の１／１０以
下の薄い膜厚で形成し、次いで湿式メッキによって端子
電極を形成するようにしたものである。[Means for Solving the Problems] That is, the present invention, when forming terminal electrodes of a thin film magnetic head, forms a pattern resist with a thin film thickness of 1/10 or less of the terminal electrode plating thickness, and then performs wet plating. Terminal electrodes are formed by the following steps.
このようにパターンレジストの膜厚を端子電極メッキ厚
の１／１０以下の薄い膜厚としたことによリ、端子電極
の形成工程において端子電極のメンキ膜は、パターンレ
ジストの膜厚を越えると横方向に等方的に成長し、この
ため端子電極はその上面部から周面部にかけて緩やかな
Ｒ状となる形状に形成される。このため保護膜の形成工
程においては、保護膜は端子電極の周面部のＲ形状に沿
うようにして滑らかに被着され、充分なカバーリングが
成されることになる。By making the pattern resist film as thin as 1/10 or less of the terminal electrode plating thickness in this way, in the process of forming the terminal electrodes, if the coating film on the terminal electrodes exceeds the pattern resist film thickness, The terminal electrode grows isotropically in the lateral direction, so that the terminal electrode is formed into a gently rounded shape from the upper surface to the peripheral surface. Therefore, in the step of forming the protective film, the protective film is smoothly applied along the rounded shape of the peripheral surface of the terminal electrode, and sufficient covering is achieved.
以下、第１図を参照しながら本発明の薄膜磁気ヘッドの
端子電極形成方法の実施例について説明するに、上述し
た第３図の従来例と対応する箇所には同一符号を付しで
ある。Hereinafter, an embodiment of the method for forming terminal electrodes of a thin film magnetic head according to the present invention will be described with reference to FIG. 1. Parts corresponding to those of the conventional example shown in FIG. 3 described above are given the same reference numerals.
先ず、上述した従来例の第３図Ａと同様にして基板（２
）の引出し導体（６）上にメッキ下地膜（９）を形成す
る。このメッキ下地膜（９）は、本例においては膜付着
力向上のためのＴｉ３００人と、Ｃｕ１０００人をスバ
・ツタあるいは蒸着によって被着して形成する。First, the substrate (2
) A plating base film (9) is formed on the lead-out conductor (6). In this example, the plating base film (9) is formed by depositing 300 layers of Ti and 1000 layers of Cu to improve film adhesion by using sorrel ivy or vapor deposition.
そして第１図Ａに示す如く、このメッキ下地膜（９）上
にパターンレジスト（１０）を形成するが、本例におい
°ζはこのパターンレジスト（１０）の膜厚ｄｒを後述
する端子電極（８）のメッキＩＩ（１１）の膜厚ｃｉｐ
の １／１０以下に形成する。具体的には、このパター
ンレジスト（１０）を１〜３μ鋼の膜厚で引出し導体（
６）上のメッキ下地［９（９）に塗布パターンニングす
る。As shown in FIG. 1A, a pattern resist (10) is formed on this plating base film (9). In this example, °ζ is the film thickness dr of this pattern resist (10), which will be described later. 8) Film thickness of plating II (11) cip
Formed to 1/10 or less of the original size. Specifically, this pattern resist (10) is formed into a lead-out conductor (
6) Apply patterning to the upper plating base [9 (9).
次いで同図Ｂのように、パターンレジスト（１０）が形
成されていない部分に湿式メッキによてメキＩＮ（１１
）を成長させる０本例ではこのメッキ膜（１１）の膜厚
ｄｐは３０μｍに設定される。Next, as shown in FIG.
) In this example, the thickness dp of this plating film (11) is set to 30 μm.
このときメッキ１ｍ（１１）は、パターンレジスト（１
０）の膜厚以上になるとパターンレジスト（１０）の上
面に沿って横方向に等方的に成長してゆ（ため、図示の
如く上面部から周面部にかけて緩やかなＲ形状となる断
面に形成される。At this time, 1m of plating (11) is covered with pattern resist (1m).
When the film thickness exceeds 0), the pattern resist (10) grows isotropically in the lateral direction along the upper surface of the pattern resist (10).Therefore, as shown in the figure, the pattern resist (10) is formed into a gently curved cross section from the upper surface to the peripheral surface. be done.
このようにしてメッキＩＮ（１１）を形成した後、同図
Ｃの如くパターンレジスト（１０）を剥離し、次いでそ
の下のメッキ下地膜（９）をエツチングによって除去す
ることにより、引出し導体（６）上にメッキ膜（１１）
のみが残存し、即ち引出し導体（６）の外部接続端に端
子電極（８）が形成される。After forming the plating IN (11) in this way, the pattern resist (10) is peeled off as shown in FIG. ) plated film (11) on top
Only a terminal electrode (8) remains, that is, a terminal electrode (8) is formed at the external connection end of the lead-out conductor (6).
この端子電極（８）にはオーバーハング部（８ａ）が生
じてはいるが、パターンレジスト（１０）の膜厚が極め
て薄いものであったために、このオーバーハング部（８
ａ）は低位に形成された状態と成され、即ち後述する保
護１ｉｉ（７１の形成において殆ど影響のない状態に形
成されている。This terminal electrode (8) has an overhang part (8a), but since the pattern resist (10) has an extremely thin film thickness, this overhang part (8a)
a) is formed at a low level, that is, it is formed in a state where it has almost no influence on the formation of protection 1ii (71), which will be described later.
そして以上のようにして端子電極（８）が形成された状
態で同図りに示す如く薄膜磁気ヘッドの基板（２）の端
子電極を含む全面に保護膜（７）が被着される。With the terminal electrodes (8) formed as described above, a protective film (7) is applied to the entire surface of the substrate (2) of the thin film magnetic head, including the terminal electrodes, as shown in the figure.
この保護膜（７）の形成工程においては、端子電極（８
）の上面部から周面部にかけて緩やかなＲ形状に形成さ
れていることにより、保護膜（７）はこのＲ状面に沿っ
て滑らかに被着され、端子電極（８）の周面全面に密着
状態となり、従って保護膜（７）にはクランクや欠は等
の不良が生じることなく充分な端子電極（８）に対する
カバーリングが行われることになる。In the process of forming this protective film (7), the terminal electrode (8
) is formed in a gentle rounded shape from the upper surface to the peripheral surface, so that the protective film (7) is smoothly applied along this rounded surface and tightly adheres to the entire peripheral surface of the terminal electrode (8). Therefore, the protective film (7) can sufficiently cover the terminal electrode (8) without causing any defects such as cracks or cracks.
また、この際上述した如く、端子電極（８）にはオーバ
ーハング部（８ａ）が生じてはいるが、このオーバーハ
ング部（８ａ）は低位に形成されており、即ちオーバー
ハング部（８ａ）と導体（６）間の間隔は保護膜（７）
の数十μ陽もの膜厚に比して極めて狭いので、保護［９
（７）のカバーリングには何ら影響はない。In addition, as described above, the terminal electrode (8) has an overhang part (8a), but this overhang part (8a) is formed at a low level, that is, the overhang part (8a) The distance between the conductor (6) and the protective film (7)
It is extremely narrow compared to the film thickness of several tens of microns, so it is difficult to protect [9
There is no effect on the covering in (7).
このようにｉｌ！磁気ヘッドの全面に保護［ｊ！（７）
を形成した後、最後に同図Ｅの如く端子電極（８）上の
保護膜（７）をラッピング等によって切削し、端子電極
（８）の頭部を保護膜（７）の表面上に露出させる。Like this! Protection on the entire surface of the magnetic head [j! (7)
After forming the protective film (7), the protective film (7) on the terminal electrode (8) is finally cut off by lapping or the like as shown in Fig. E, and the head of the terminal electrode (8) is exposed on the surface of the protective film (7). let
以上の如き本例の薄膜磁気ヘッドの端子電極形成方法に
よれば、パターンレジスト（１０）の膜厚ｄｒを端子電
極（８）のメッキ膜厚ｄｐの１７１０以下の薄い膜厚に
形成したことにより、端子電極（８）は上面部から周面
部にかけて緩やかなＲ形状に形成され、また端子電極（
８）に生じるオーバーハング部（８ａ）は保護膜（７）
のカバーリングに殆ど影響がない状態に形成されるので
、保護ＩＩＩ （７）は従来のようにクラック、欠は等
が生じることなく良好な膜質で端子電極（８）に対する
充分なカバーリングが可能となる。According to the method for forming terminal electrodes of the thin film magnetic head of the present example as described above, the film thickness dr of the pattern resist (10) is formed to be as thin as 1710 or less than the plating film thickness dp of the terminal electrode (8). , the terminal electrode (8) is formed in a gentle R shape from the top surface to the peripheral surface, and the terminal electrode (
The overhang part (8a) that occurs in 8) is the protective film (7)
Since the protection III (7) is formed with almost no effect on the covering of the terminal electrode (8), the protection III (7) has good film quality and can sufficiently cover the terminal electrode (8) without causing cracks, chips, etc. as in the conventional case. becomes.
また本例方法によれば、従来の如く基板にバイアス電圧
を印加する等の特別な手法を用いる必要がないので、保
護膜（７）の成膜スピードを早くでき、またパターンレ
ジスト（１０）の形成時にはその成膜が薄くて済むので
パターンレジスト（１０）の塗布パターンニング工程を
短縮することができると共に精度も向上する等、種々の
効果を有する。Further, according to the method of this example, there is no need to use special techniques such as applying a bias voltage to the substrate as in the past, so the film formation speed of the protective film (7) can be increased, and the pattern resist (10) can be formed at a faster rate. Since the film only needs to be thin during formation, it has various effects such as being able to shorten the process of coating and patterning the pattern resist (10) and improving accuracy.
尚、本例において記載したパターンレジスト（１０）の
膜厚及び端子電極（８）のメッキ膜（１１）の膜厚の具
体的数値は一実施例であり、この数値に本発明が限定さ
れるものではない。Note that the specific numerical values of the film thickness of the pattern resist (10) and the film thickness of the plating film (11) of the terminal electrode (8) described in this example are one example, and the present invention is limited to these numerical values. It's not a thing.
以上の如く本発明のｉ膜磁気ヘッドの端子電極の形成方
法は、パターンレジストを端子電極メッキ厚の１／１０
以下の薄い膜厚で形成するようにしたことにより、端子
電極のメッキ膜はその上面部から周面部にかけて緩やか
なＲ状に形成され、またオーバーハング部は保護膜によ
るカバーリングに殆ど影響がない状態に形成されるので
、保護膜形成工程において特別な手法を用いることなく
通常の保護膜形成方法によって良好な膜質で端子電極に
対する充分なカバーリングが可能となる。As described above, the method for forming the terminal electrodes of the i-film magnetic head of the present invention is to apply a pattern resist to 1/10 of the terminal electrode plating thickness.
By forming the film with the following thin film thickness, the plating film of the terminal electrode is formed in a gentle round shape from the top surface to the peripheral surface, and the overhang part has almost no effect on the covering by the protective film. Therefore, sufficient covering of the terminal electrodes can be achieved with good film quality by a normal protective film forming method without using any special method in the protective film forming process.
第１図Ａ−Ｅは本発明の薄膜磁気ヘッドの端子電極形成
方法の工程図、第２図は薄膜磁気ヘッドの模式的断面図
、第３図Ａ−Ｅは従来の薄膜磁気ヘッドの端子電極形成
方法の工程図である。
図中（２）は基板、（６）は引出し導体、（７）は保護
膜、（８）は端子電極、（１０）はパターンレジスト、
（１１）はメッキ膜である。1A-E are process diagrams of a method for forming terminal electrodes of a thin-film magnetic head according to the present invention, FIG. 2 is a schematic cross-sectional view of a thin-film magnetic head, and FIGS. 3A-E are terminal electrodes of a conventional thin-film magnetic head. It is a process diagram of a formation method. In the figure, (2) is the substrate, (6) is the lead-out conductor, (7) is the protective film, (8) is the terminal electrode, (10) is the pattern resist,
(11) is a plating film.
Claims (1)
ジストの膜厚を端子電極メッキ厚の１／１０以下とし、
次いで湿式メッキにより端子電極を形成する薄膜磁気ヘ
ッドの端子電極形成方法。When forming terminal electrodes of a thin film magnetic head, the thickness of the pattern resist is 1/10 or less of the terminal electrode plating thickness,
Next, a method for forming terminal electrodes of a thin film magnetic head, in which terminal electrodes are formed by wet plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5106087A JPS63217513A (en) | 1987-03-05 | 1987-03-05 | Formation of terminal electrode of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5106087A JPS63217513A (en) | 1987-03-05 | 1987-03-05 | Formation of terminal electrode of thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63217513A true JPS63217513A (en) | 1988-09-09 |
Family
ID=12876257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5106087A Pending JPS63217513A (en) | 1987-03-05 | 1987-03-05 | Formation of terminal electrode of thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63217513A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0316008A (en) * | 1989-06-12 | 1991-01-24 | Tdk Corp | Thin film magnetic head |
-
1987
- 1987-03-05 JP JP5106087A patent/JPS63217513A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0316008A (en) * | 1989-06-12 | 1991-01-24 | Tdk Corp | Thin film magnetic head |
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