JPS63197013A - Formation of protective film for thin film magnetic head - Google Patents
Formation of protective film for thin film magnetic headInfo
- Publication number
- JPS63197013A JPS63197013A JP2825387A JP2825387A JPS63197013A JP S63197013 A JPS63197013 A JP S63197013A JP 2825387 A JP2825387 A JP 2825387A JP 2825387 A JP2825387 A JP 2825387A JP S63197013 A JPS63197013 A JP S63197013A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- film
- magnetic head
- thin film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 title claims abstract description 78
- 230000001681 protective effect Effects 0.000 title claims abstract description 52
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 239000013522 chelant Substances 0.000 claims abstract description 7
- 239000000853 adhesive Substances 0.000 claims abstract 4
- 230000001070 adhesive effect Effects 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 21
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 abstract description 15
- 238000004544 sputter deposition Methods 0.000 abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052802 copper Inorganic materials 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KEBBHXFLBGHGMA-UHFFFAOYSA-K aluminum;4-ethyl-3-oxohexanoate Chemical compound [Al+3].CCC(CC)C(=O)CC([O-])=O.CCC(CC)C(=O)CC([O-])=O.CCC(CC)C(=O)CC([O-])=O KEBBHXFLBGHGMA-UHFFFAOYSA-K 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜磁気ヘッド用保護膜の形成方法に係り、特
に、スパッタリング法を用いて保護膜を形成するのに適
した方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a protective film for a thin film magnetic head, and particularly to a method suitable for forming a protective film using a sputtering method.
第２図に、薄膜磁気ヘッドの断面図を示す。セラミック
基板２１上に、下地膜２２．下部磁性膜２３、磁気ギャ
ップ膜２４．有機絶縁膜２５．導体コイル２６．上部磁
性膜２７．第一保護膜２８及び第二保護膜２９を次々に
積層して素子が得られる。このうち第二保護膜２９は、
通常スパッタリング法を用いて形成される。FIG. 2 shows a cross-sectional view of the thin film magnetic head. On the ceramic substrate 21, a base film 22. Lower magnetic film 23, magnetic gap film 24. Organic insulating film 25. Conductor coil 26. Upper magnetic film 27. An element is obtained by laminating the first protective film 28 and the second protective film 29 one after another. Of these, the second protective film 29 is
It is usually formed using a sputtering method.
この薄膜磁気ヘッド素子の導体コイル２６に電気接続を
とるために、引き出し端子を形成する必゛要がある。こ
の引き出し端子の形成工程を表わす断面図を第３図に示
す。まず、セラミック基板３１及び下地膜３２上に、薄
膜磁気ヘッド素子（第３図中には表わさない）及び導体
コイル引き出し線３３を形成した後、第一保護膜３４を
形成して、第３図（ａ）に示す構造を得る。次いで、第
−保護膜３４にエツチング法で穴をあけ、めっき用下地
膜３５及びホトレジストパターン３６を形成して、第３
図（ｂ）に示す構造を得る。銅端子３７をめっきした後
、第３図（ｃ）に示したように、ホトレジストパターン
及び露出しているめっき用下地膜を除去する。そしてス
パッタリング法を用いて第二保護膜３８を形成し、第３
図（ｄ）に示したように、表面研磨して銅端子３７を露
出させる。In order to make an electrical connection to the conductor coil 26 of this thin film magnetic head element, it is necessary to form a lead terminal. A cross-sectional view showing the process of forming this lead terminal is shown in FIG. First, a thin film magnetic head element (not shown in FIG. 3) and a conductor coil lead wire 33 are formed on a ceramic substrate 31 and a base film 32, and then a first protective film 34 is formed, as shown in FIG. The structure shown in (a) is obtained. Next, holes are made in the third protective film 34 by etching, a plating base film 35 and a photoresist pattern 36 are formed, and a third protective film 34 is formed.
The structure shown in Figure (b) is obtained. After plating the copper terminal 37, as shown in FIG. 3(c), the photoresist pattern and the exposed plating base film are removed. Then, a second protective film 38 is formed using a sputtering method, and a third protective film 38 is formed using a sputtering method.
As shown in Figure (d), the surface is polished to expose the copper terminal 37.
この第二保護膜３８を形成する際、露出している第一保
護膜３４の表面を清浄にして、第二保護膜３８の密着力
を増加させ、素子の信頼性を上げなければならない。こ
のようなスパッタリング膜の密着力を増加させるために
、一般に用いられる手法としてスパッタクリーニング法
がある。これは、例えば、薄膜化技術（早用茂及び和佐
清孝著、共立出版）第６６頁から第６８頁に述べられて
いるスパッタエッチ法と同等の手法であり、スパッタリ
ング直前に試料（本発明では薄膜磁気ヘッド基板）に電
力を導入してスパッタリングを起こさく３）
せ、飛来したスパッタガスイオン（一般的にはアルゴン
イオンを用いることが多い）で試料表面をわずかにエツ
チングすることにより清浄化する。When forming the second protective film 38, the exposed surface of the first protective film 34 must be cleaned to increase the adhesion of the second protective film 38 and improve the reliability of the device. A sputter cleaning method is commonly used to increase the adhesion of such sputtered films. This is, for example, a method equivalent to the sputter etching method described in Thin Film Technology (written by Shigeru Hayayo and Kiyotaka Wasa, Kyoritsu Shuppan), pages 66 to 68. Electric power is introduced into the thin film magnetic head substrate (3) to cause sputtering, and the sample surface is cleaned by slightly etching with the flying sputtering gas ions (generally argon ions are often used). .
本発明で述べている薄膜磁気ヘッド用保護膜の形成プロ
セスでも、第二保護膜をスパッタリングする直曲に、従
来はスパッタクリーニング法を用いて第一保護膜表面を
清浄化していた。In the process for forming a protective film for a thin film magnetic head described in the present invention, a sputter cleaning method has conventionally been used to clean the surface of the first protective film before sputtering the second protective film.
しかし、実際にこのプロセスで薄膜磁気ヘッドを形成し
たところ、素子形成後の基板切断・研磨工程において、
第二保護膜と第一保護膜の界面で剥離が生じ、素子の信
頼性が低下してしまうことがわかった。そこで、剥離の
原因について検討した結果、第一保護膜表面をスパッタ
クリーニングする際に、露出している銅端子部分の表面
がエツチングされてしまい、削られた銅が第一保護膜表
面に付着して、その後、形成される第二保護膜の密着力
を低下させていることがわかった。However, when a thin film magnetic head was actually formed using this process, in the substrate cutting and polishing process after element formation,
It was found that peeling occurred at the interface between the second protective film and the first protective film, reducing the reliability of the device. Therefore, we investigated the cause of the peeling and found that when sputter cleaning the surface of the first protective film, the surface of the exposed copper terminal was etched, and the scraped copper adhered to the surface of the first protective film. It has been found that this reduces the adhesion of the second protective film that is subsequently formed.
このため、スパッタクリーニングを省略して第二保護膜
を形成したが、第一保護膜表面が清浄になっていないた
め、密着力が低く、やはり信頼性に欠けるという問題が
あった。For this reason, the second protective film was formed without sputter cleaning, but since the surface of the first protective film was not clean, there was a problem in that the adhesion was low and reliability was still lacking.
本発明の目的は、第一保護膜と第二保護膜の密着力を増
加させ、薄膜磁気ヘッド素子の信頼性を向上させること
にある。An object of the present invention is to increase the adhesion between the first protective film and the second protective film, thereby improving the reliability of the thin film magnetic head element.
上記目的は、第二保護膜を形成する前に、第一保護膜及
び露出している銅端子の表面を、密着力にすぐれた薄膜
で被覆することによって達成される。The above object is achieved by coating the first protective film and the exposed surface of the copper terminal with a thin film having excellent adhesion before forming the second protective film.
薄膜磁気ヘッドの保護膜には、通常、無機酸化物薄膜、
特に、酸化アルミニウム膜や二酸化ケイ素膜が用いられ
ることが多い。従って、上記の密着力にすぐれた膜とし
ても、これらの物質と同種の無機酸化物を用いることが
望ましい。The protective film of a thin-film magnetic head is usually an inorganic oxide thin film,
In particular, aluminum oxide films and silicon dioxide films are often used. Therefore, it is desirable to use inorganic oxides of the same type as these substances even for the above-mentioned film having excellent adhesion.
また、スパッタリング法（スパッタクリーニングの有無
に関係なく）では密着力に富んだ膜を形成することが困
難であるため、例えば、アルミキレート化合物を含む溶
液の塗布、熱処理によって、酸化アルミニウム膜を形成
する方法を用いることが望ましい。In addition, since it is difficult to form a film with high adhesion using sputtering methods (regardless of whether sputter cleaning is performed or not), an aluminum oxide film can be formed by, for example, applying a solution containing an aluminum chelate compound and heat treatment. It is desirable to use a method.
アルミキレート化合物は、例えば、アルミニウム・モノ
エチルアセトアセテート・ジイリプロピレート、アルミ
ニウム・ジエチルアセトアセテート・モノイソプロピレ
ートなどを用いることができる。また、これらのアルミ
キレート化合物は、ｎ−ヘキサン、シクロヘキサン、ト
ルエン、ベンゼン、キシレン等の溶媒に溶解させた液を
用いて塗布する。濃度は、通常、０．２〜５０ｗｔ％を
用いている。As the aluminum chelate compound, for example, aluminum monoethylacetoacetate diyripropylate, aluminum diethylacetoacetate monoisopropylate, etc. can be used. Further, these aluminum chelate compounds are applied using a solution dissolved in a solvent such as n-hexane, cyclohexane, toluene, benzene, or xylene. The concentration is usually 0.2 to 50 wt%.
上記のように、第−保護膜表面及び銅端子表面に、アル
ミキレート化合物を用いた酸化アルミニウム膜を形成し
ておけば、第二保護膜をスパッタリングする際に、基板
表面をスパッタクリーニングしても銅がエツチングされ
ることはなく、基板表面を容易に清浄化できる。従って
、続いて第二保護膜をスパッタリングすることにより、
密着力の大きな保護膜が形成でき、信頼性にすぐれた薄
膜磁気ヘッド素子が得られる。As mentioned above, if an aluminum oxide film using an aluminum chelate compound is formed on the surface of the first protective film and the surface of the copper terminal, the surface of the substrate can be sputter-cleaned when sputtering the second protective film. The copper is not etched and the substrate surface can be easily cleaned. Therefore, by subsequently sputtering the second protective film,
A protective film with great adhesion can be formed, and a thin-film magnetic head element with excellent reliability can be obtained.
以下、本発明の一実施例を第１図により説明する。第１
図は、薄膜磁気ヘッドの引き出し端子の形成工程の一例
を表わす断面図である。An embodiment of the present invention will be described below with reference to FIG. 1st
The figure is a cross-sectional view illustrating an example of a process for forming lead terminals of a thin-film magnetic head.
セラミック基板１１及び酸化アルミニウム下地膜１２上
に、薄膜磁気ヘッド素子（第１図中には表わさない）及
び銅を用いた導体コイル引き出し線１３を形成した後、
酸化アルミニウムを用いた第一保護膜１４を形成して、
第１図（ａ）に示した構造を得た。次いで、イオンビー
ムエツチング法を用いて第一保護膜１４に穴をあけた後
、Ｃｒ（０，０３μｍ厚） Ｃｕ （０，１μｍ厚）
の二１層膜を用いためつき用下地膜１５及びホトレジス
トパターン（１０μｍ厚）１６を形成して、第１図（ｂ
）に示す構造を得た。次いで、電気めっき法を用いて銅
端子（４０μｍ厚）１７を形成した後、第１図（、）に
示したように、ホトレジスト−パターン及び露出してい
るめっき用下地膜をウェットエツチング法を用いて除去
した。次いで、アルミキレート化合物であるアルミニウ
ムモノエチルアセトアセテートジイソプロピレートの１
ｗ ｔ％トルエン溶液をスピンナ３０００ ｐ ｐ
ｍで回転塗布し、真空中で３５０℃一時間加熱して、厚
さ０．０２μｍの酸化アルミニウム膜１９を形成し、第
１図（ｄ）に示す構造を得た。次いで、ｌｋｗの電力で
十分間スパッタクリーニングした後、スパッタリング法
を用いて厚さ５０μｍの酸化アルミニウム膜１８を形成
し、さらに第１図（ｅ）に示したように、表面研磨して
銅端子１７を露出させた。After forming a thin film magnetic head element (not shown in FIG. 1) and a conductor coil lead wire 13 using copper on the ceramic substrate 11 and the aluminum oxide base film 12,
Forming a first protective film 14 using aluminum oxide,
The structure shown in FIG. 1(a) was obtained. Next, after making a hole in the first protective film 14 using the ion beam etching method, Cr (0.03 μm thick) Cu (0.1 μm thick)
A base film 15 for storage and a photoresist pattern (10 μm thick) 16 were formed using a 21-layer film of FIG.
) was obtained. Next, after forming a copper terminal (40 μm thick) 17 using an electroplating method, the photoresist pattern and the exposed base film for plating are etched using a wet etching method, as shown in FIG. It was removed. Next, 1 of aluminum monoethyl acetoacetate diisopropylate which is an aluminum chelate compound
wt% toluene solution in spinner 3000 pp
The aluminum oxide film 19 having a thickness of 0.02 μm was formed by spin-coating the aluminum oxide film 19 at 350° C. for 1 hour in a vacuum, thereby obtaining the structure shown in FIG. Next, after sputter cleaning with a power of 1 kW for ten minutes, an aluminum oxide film 18 with a thickness of 50 μm is formed using a sputtering method, and the surface is polished to form a copper terminal 17 as shown in FIG. 1(e). exposed.
こうして得た薄膜磁気ヘッド基板を切断・研磨したとこ
ろ、保護膜の剥離はまったく見られず、信頼性にすぐれ
た素子が形成できることがわかった。When the thin-film magnetic head substrate thus obtained was cut and polished, no peeling of the protective film was observed, indicating that an element with excellent reliability could be formed.
本発明によれば、密着力の大きい保護膜をスパッタリン
グ法で形成できる。According to the present invention, a protective film with high adhesion can be formed by sputtering.
第１図は本発明の一実施例の工程を示す図、第２図は薄
膜磁気ヘッド素子の断面図、第３図は従来の工程を示す
図である。
１１・・・セラミック基板、１２・・・下地膜、１３・
・・導体コイル引き出し線、１４・・・第１保護膜、１
５・・・めっき用下地膜、１６・・・ホトレジスト、１
７・・・銅端子、１８・・・第２保護膜、１９・・・酸
化アルミニウム膜。FIG. 1 is a diagram showing a process according to an embodiment of the present invention, FIG. 2 is a sectional view of a thin film magnetic head element, and FIG. 3 is a diagram showing a conventional process. 11... Ceramic substrate, 12... Base film, 13.
...Conductor coil lead wire, 14...First protective film, 1
5... Base film for plating, 16... Photoresist, 1
7...Copper terminal, 18...Second protective film, 19...Aluminum oxide film.
Claims (1)
気的接続をとるための端子部分の双方の表面の全体もし
くは一部分に、密着力の大きい薄膜を形成した後、第二
保護膜を形成することを特徴とする薄膜磁気ヘッド用保
護膜の形成方法。 ２、特許請求の範囲第１項において、 密着力の大きい前記薄膜として無機酸化物を用いたこと
を特徴とする薄膜磁気ヘッド用保護膜の形成方法。 ３、特許請求の範囲第２項において、 前記無機酸化物としてアルミニウムキレート溶液の熱処
理法で形成した酸化アルミニウムを用いたことを特徴と
する薄膜磁気ヘッド用保護膜の形成方法。[Claims] 1. After forming a highly adhesive thin film on the whole or part of the surfaces of both the first protective film that directly covers and protects the device and the terminal portion that makes electrical connection to the device. A method for forming a protective film for a thin film magnetic head, the method comprising forming a second protective film. 2. The method of forming a thin film protective film for a magnetic head according to claim 1, characterized in that an inorganic oxide is used as the thin film with high adhesion. 3. The method of forming a thin film protective film for a magnetic head according to claim 2, wherein aluminum oxide formed by a heat treatment method of an aluminum chelate solution is used as the inorganic oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2825387A JPS63197013A (en) | 1987-02-12 | 1987-02-12 | Formation of protective film for thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2825387A JPS63197013A (en) | 1987-02-12 | 1987-02-12 | Formation of protective film for thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63197013A true JPS63197013A (en) | 1988-08-15 |
Family
ID=12243405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2825387A Pending JPS63197013A (en) | 1987-02-12 | 1987-02-12 | Formation of protective film for thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63197013A (en) |
-
1987
- 1987-02-12 JP JP2825387A patent/JPS63197013A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5059278A (en) | Selective chemical removal of coil seed-layer in thin film head magnetic transducer | |
| US5820770A (en) | Thin film magnetic head including vias formed in alumina layer and process for making the same | |
| US5462637A (en) | Process for fabrication of thin film magnetic heads | |
| US4424271A (en) | Deposition process | |
| JPH0256721B2 (en) | ||
| JPH03105712A (en) | Method of forming pull piece and gap of magnetic head for audio ,video, and computer in film layer | |
| JPS63197013A (en) | Formation of protective film for thin film magnetic head | |
| JPS61122910A (en) | Production of thin film-like magnetic head | |
| JPH0575237A (en) | Conductor pattern formation | |
| US5870262A (en) | Magneto resistive effect type head having a stressed insulation layer | |
| JPH0320808B2 (en) | ||
| JPS63217513A (en) | Formation of terminal electrode of thin film magnetic head | |
| JPS63293861A (en) | Manufacture of semiconductor device | |
| JPS62170011A (en) | Manufacture of thin film magnetic head | |
| JP2552189B2 (en) | Method of manufacturing thin film magnetic head | |
| JPH02229433A (en) | Wiring material | |
| JP3513051B2 (en) | Method for manufacturing thin-film magnetic head | |
| JPS62244150A (en) | Semiconductor device with mutual interconnection layer of aluminum containing vanadium with low content | |
| JPS63106909A (en) | Production of thin film magnetic head | |
| JP2589856B2 (en) | Thin film magnetic head | |
| JPH0660325A (en) | Production of thin-film magnetic head | |
| JPH0279207A (en) | Production of thin film magnetic head | |
| JPS60136906A (en) | Production of thin film magnetic head | |
| JPS6089566A (en) | Apparatus for sputtering cr and cu | |
| JPS6261334A (en) | Formation of pattern |