JPS63215021A - Manufacture of variable resistor - Google Patents
Manufacture of variable resistorInfo
- Publication number
- JPS63215021A JPS63215021A JP62049744A JP4974487A JPS63215021A JP S63215021 A JPS63215021 A JP S63215021A JP 62049744 A JP62049744 A JP 62049744A JP 4974487 A JP4974487 A JP 4974487A JP S63215021 A JPS63215021 A JP S63215021A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- bottom layer
- layer
- plating
- variable resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000007747 plating Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 229910001252 Pd alloy Inorganic materials 0.000 description 8
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 7
- 238000005476 soldering Methods 0.000 description 6
- 239000011195 cermet Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
厳ｆｌ肛立野
本発明は、絶縁基板上に形成した抵抗体上で摺動子を回
動させることにより抵抗値を可変とした、プリント回路
基板等への表面実装可能な可変抵抗器の製造方法に関す
る。[Detailed Description of the Invention] The present invention can be surface-mounted onto a printed circuit board, etc., in which the resistance value can be varied by rotating a slider on a resistor formed on an insulating substrate. The present invention relates to a method of manufacturing a variable resistor.
疋米五弦重
従来、この種の可変抵抗器としては、第８図に示す様に
、絶縁基板１の上面に円弧状のサーメット抵抗体５を形
成し、この絶縁基板１上に摺動子（図示せず）を抵抗体
５上を摺動する様に回動可能に取付けたものが提供され
ている。なお、摺動子は絶縁基板１の中心孔２に図示し
ない電極を介して回動可能に取り付けられている。Conventionally, as shown in FIG. 8, in this type of variable resistor, an arc-shaped cermet resistor 5 is formed on the upper surface of an insulating substrate 1, and a slider is mounted on the insulating substrate 1. (not shown) is rotatably attached so as to slide on the resistor 5. Note that the slider is rotatably attached to the center hole 2 of the insulating substrate 1 via an electrode (not shown).
また、抵抗体５の両端部には銀−パラジウム合金からな
る外部電極６，６が設けられている。この外部電極６は
、第９図に示す様に、まず、絶縁基板１の表裏面に銀−
パラジウム合金６ａ 、 ６ｂを印刷・焼付けし、端面
に同じく銀−パラジウム合金６０をデツプ・焼付けした
もので、その後抵抗体５が印刷・焼付けされる。Furthermore, external electrodes 6, 6 made of a silver-palladium alloy are provided at both ends of the resistor 5. As shown in FIG.
Palladium alloys 6a and 6b are printed and baked, and a silver-palladium alloy 60 is similarly deposited and baked on the end face, and then the resistor 5 is printed and baked.
λ甥Ｊ」冒（Ｖ主」ユコし支が履虞
しかしながら、以上の可変抵抗器においては、半田中に
銀が拡散する銀くわれを防止して半田耐熱特性の向上を
図るために外部電極６として銀−パラジウム合金を使用
しているが、これでは高価であり、かつ、銀くわれを確
実に防止することも不可能であるという問題点を有して
いる。また、端面に設けた銀−パラジウム合金６ｃの膜
厚がどうしても厚くなり、ガラスフリットが表面に露出
して半田付Ｃす特性を損ない、煩雑な予備半田が必要で
あるという問題点をも有している。However, in the above variable resistor, the external electrode is used to prevent silver from diffusing into the solder and improve the soldering heat resistance. Silver-palladium alloy is used as No. 6, but this has the problem that it is expensive and it is impossible to reliably prevent silver corrosion. There are also problems in that the film thickness of the silver-palladium alloy 6c inevitably increases, the glass frit is exposed on the surface, impairing the soldering characteristics, and complicated preliminary soldering is required.
間 １、を するための 段
そこで、本発明に係る可変抵抗器は、
（ｉ）絶縁基板の端面近傍の表面部にメッキが可能な表
面側最下層と絶縁基板の端面にメッキが可能な端面側最
下層とを形成する工程と、（ｉ）抵抗体を前記表面側最
下層の一部を覆う様に設ける工程と、
（ｉ）メッキレジストをその端縁が前記表面側最下層に
達する様に前記抵抗体上に設ける工程と、（〜）メッキ
層を前記表面側最下層の一部と前記端面側最下層とを覆
う様に形成する工程と、（Ｖ）前記メッキレジストを除
去する工程と、を備えたことを特徴とする。Therefore, the variable resistor according to the present invention includes: (i) a lowermost layer on the surface side where the surface near the end surface of the insulating substrate can be plated; and an end surface where the end surface of the insulating substrate can be plated; (i) providing a resistor so as to cover a part of the bottom layer on the surface side; (i) applying a plating resist so that its edges reach the bottom layer on the surface side; (-) a step of forming a plating layer so as to cover a part of the bottom layer on the surface side and the bottom layer on the end surface side; (V) a step of removing the plating resist. It is characterized by having the following.
正−月
即ち、本発明に係る製造方法では、外部電極のメッキが
可能な最下層（例えば、銀、銀−パラジウム合金）は少
なくとも一層のメッキ層で被覆。In other words, in the manufacturing method according to the present invention, the lowest plating layer of the external electrode (for example, silver, silver-palladium alloy) is coated with at least one plating layer.
保護されることとなる。従っ−て、最下層に安価な銀を
使用しても銀くわれが発生することはない。It will be protected. Therefore, even if inexpensive silver is used in the bottom layer, silver corrosion will not occur.
また、メッキ層を形成する前にメッキレジストをその端
縁が表面側最下層に達する様に抵抗体上に設けることか
ら、抵抗体にメッキ層が接触して抵抗体の特性が劣化し
たり、メッキ層の接触部分が抵抗値の調整時等に剥がれ
て絶縁不良を招来することが防止される。しかも、メッ
キレジストの端縁が表面側最下層上に位置することから
、メッキレジスト端縁の密着性が良好で抵抗体がメッキ
層から完全に保護されることとなる。In addition, since the plating resist is provided on the resistor so that its edge reaches the bottom layer on the surface side before forming the plating layer, the plating layer may come into contact with the resistor and the characteristics of the resistor may deteriorate. This prevents the contact portion of the plating layer from peeling off when adjusting the resistance value, resulting in poor insulation. Moreover, since the edge of the plating resist is located on the bottom layer on the surface side, the adhesion of the edge of the plating resist is good and the resistor is completely protected from the plating layer.
衷舅倒
第１図ないし第４図は本発明に係る製造方法にて製造き
れた可変抵抗器を示し、まず、その構成を説明する。1 to 4 show a variable resistor manufactured by the manufacturing method according to the present invention, and the structure thereof will be explained first.
この可変抵抗器は、絶縁基板１０と、その表面に設置し
た摺動子２０とから構成されている。This variable resistor is composed of an insulating substrate 10 and a slider 20 installed on the surface of the insulating substrate 10.
絶縁基板１０はアルミナを成形、焼結したもので、中心
孔１１を有し、その表面には円弧状のサーメット抵抗体
１５と環状のフレフタ電極１７とが形成されている。抵
抗体１５の両端部とフレフタ電極１７とは基板１０の一
端部まで延在され、以下に詳述する外部電極１６．１６
．１８と電気的に接続されている。The insulating substrate 10 is made of molded and sintered alumina, has a center hole 11, and has an arcuate cermet resistor 15 and an annular flutter electrode 17 formed on its surface. Both ends of the resistor 15 and the flefter electrode 17 extend to one end of the substrate 10, and are connected to external electrodes 16.16, which will be described in detail below.
．． It is electrically connected to 18.
摺動子２０は、第２図に示す様に、皿状部２１と中心部
に設けた筒状部２２と外周部に設けたアーム部２３とを
有している。この摺動子２０は、筒状部２２を絶縁基板
１０の中心孔１１に挿入して裏面側でかしめることによ
り、皿状部２１がコレクタ電極１７上に接触すると共に
、アーム部２３の下方に突き出された接点部２４が抵抗
体１５上に接触した状態で回動可能に取り付けられてい
る。As shown in FIG. 2, the slider 20 has a dish-shaped portion 21, a cylindrical portion 22 provided at the center, and an arm portion 23 provided at the outer periphery. This slider 20 is constructed by inserting the cylindrical part 22 into the center hole 11 of the insulating substrate 10 and caulking it on the back side, so that the dish-shaped part 21 comes into contact with the collector electrode 17 and the lower part of the arm part 23 A contact portion 24 protruding from the resistor 15 is rotatably attached to the resistor 15 in contact with the contact portion 24 .
次に、外部電極１６の構造について説明する。Next, the structure of the external electrode 16 will be explained.
外部電極１６は、第４図に示す様に、表面側最下層１６
ａ、端面側最下層１６ａ’ 、裏面側最下層１６ａ“と
、第１のメッキ層１６ｂと、第２のメッキ層１６ｃとの
三層にて構成されている。表面側最下層１６ａは銀又は
銀−パラジウム合金を印刷・焼付けし、端面側最下層１
６ａ″と裏面側最下層１６ａ”とは銀を印刷・焼付けし
たもので、その厚さは例えばそれぞれ１５μｍである。As shown in FIG.
a, the bottom layer 16a' on the end side, the bottom layer 16a'' on the back side, the first plating layer 16b, and the second plating layer 16c.The bottom layer 16a on the front side is made of silver or Print and bake silver-palladium alloy to form the bottom layer 1 on the end side.
6a'' and the bottom layer 16a'' on the back side are printed and baked with silver, and each has a thickness of, for example, 15 μm.
第１のメッキ層１６ｂはニッケル又はニッケル合金から
なり、その厚さは例えば１〜２μｍである。第２のメッ
キ層１６ｃは錫又は錫−鉛合金からなり、その厚さは例
えば１〜４μｍである。The first plating layer 16b is made of nickel or a nickel alloy, and has a thickness of, for example, 1 to 2 μm. The second plating layer 16c is made of tin or a tin-lead alloy, and has a thickness of, for example, 1 to 4 μm.
第１のメッキ層１６ｂは前記最下層１５ａ、 １６ａ
’ ｅ １６ａ ”に対して銀くわれを防止するバリア
として機能し、半田耐熱特性を向上させる作用を有する
。第２のメッキ層１６ｃは半田ぬれ性を高めて半田付は
特性を向上させる作用を有し、合わせて予備半田を省略
させる作用を有する。The first plating layer 16b is the bottom layer 15a, 16a.
The second plating layer 16c functions as a barrier to prevent silver corrosion against 'e16a' and improves soldering heat resistance.The second plating layer 16c has the effect of increasing solder wettability and improving soldering properties. It also has the effect of omitting preliminary soldering.
次に、製造工程について説明する。本発明の特徴とする
点は外部電極１６の形成に係り、その他の製造工程は従
来と同様の方法にて行なわれる。そこで、外部電極１６
の製造工程について説明する。Next, the manufacturing process will be explained. The feature of the present invention is related to the formation of the external electrode 16, and other manufacturing steps are performed in the same manner as in the prior art. Therefore, the external electrode 16
The manufacturing process will be explained.
［ｉ］絶縁基板１０の表面、端面、裏面に最下層１６ｇ
、１６ａ’、１６ａ“を形成する。[i] Bottom layer 16g on the front surface, end surface, and back surface of the insulating substrate 10
, 16a', 16a'' are formed.
［ｉ１抵抗体１５を表面側最下層１６ａの一部を覆う様
に形成する。[The i1 resistor 15 is formed so as to cover a part of the lowermost layer 16a on the surface side.
［ｉ］メッキレジスト２５（第４図ウニ点鎖線で示す）
をその端縁が表面側最下層１６ａに達する様に抵抗体１
５上に塗布する。[i] Plating resist 25 (shown by the dotted chain line in Figure 4)
resistor 1 so that its edge reaches the bottom layer 16a on the surface side.
5. Apply on top.
［■コメツキ層１６ｂ、 １６ｃを表面側最下層１６ａ
の一部と端面側最下層１６ａ’ 、裏面側最下層１６ａ
″を覆う様に形成する。[■Click layers 16b and 16c are the bottom layer 16a on the surface side
a part of the bottom layer 16a' on the end side, and the bottom layer 16a on the back side.
” to cover it.
［Ｖ］メッキレジスト２５を除去する。メッキレジスト
２５を除去するとメッキ層１６ｂ、 １６ｃと抵抗体１
５との間にはギャップＧが形成され、両者はこのギャッ
プＧを介して完全に分離されることとなる。[V] Remove the plating resist 25. When the plating resist 25 is removed, the plating layers 16b and 16c and the resistor 1 are removed.
A gap G is formed between them and 5, and the two are completely separated via this gap G.
以上の製造工程においては、メッキレジスト２５をその
端縁が表面側最下層１６ａに達する様に設けるため、メ
ッキ層１６ｂ、 １６ｃが抵抗体１５に接触して抵抗体
１５の特性が劣化したり、メッキ層１６ｂ、 １６ｃの
端部が抵抗値の調整時等に剥がれて絶縁不良を招来する
ことがない。また、メッキレジスト２５の端縁が表面側
最下７１１６ａ上に位置することから密着性が良好で、
抵抗体１５が後工程で形成されるメッキＪ＠ １６ｂ、
１６ｃから完全に保護されることとなる。In the above manufacturing process, since the plating resist 25 is provided so that its edge reaches the bottom layer 16a on the surface side, the plating layers 16b and 16c may come into contact with the resistor 15 and the characteristics of the resistor 15 may deteriorate. The ends of the plating layers 16b and 16c do not peel off during resistance value adjustment or the like, thereby preventing insulation failure. In addition, since the edge of the plating resist 25 is located on the lowermost surface side 7116a, the adhesion is good.
Plating J@16b where the resistor 15 is formed in a later process,
16c.
きらに、ギャップＧが存在することから、抵抗体１５、
メッキレジスト２５の印刷のばらつきをも吸収でき、抵
抗体１５の使用量自体が少なくて済む。Since there is a gap G, the resistor 15,
Variations in printing of the plating resist 25 can also be absorbed, and the amount of the resistor 15 itself used can be reduced.
一方、コレクタ電極１７の外部電極１８も前記外部電極
１６と同様の三層構造とされ、ギャップＧを有している
。さらに、１９は遊び電極であり、この遊び電極１９も
外部電極１６と同様の三層構造とされている。On the other hand, the external electrode 18 of the collector electrode 17 also has a three-layer structure similar to the external electrode 16, and has a gap G. Further, reference numeral 19 denotes an idle electrode, and this idle electrode 19 also has a three-layer structure similar to the external electrode 16.
なお、本発明にあっては、第２のメッキ層１６ｃは必ず
しも必要なものではなく、最下層１６ａ ＋ １６ａ
’ ｅ１６ａ”上には少なくとも第１のメッキ層１６ｂ
が形成されていればよい、また、メッキ層１６ｂ、 １
６ｃは前記の材質に限定されるものではなく、種々のも
のを使用することができる。In addition, in the present invention, the second plating layer 16c is not necessarily necessary, and the lowermost layer 16a + 16a
At least a first plating layer 16b is formed on 'e16a'.
It is sufficient that plating layers 16b, 1 are formed.
The material 6c is not limited to the above materials, and various materials can be used.
さらに、メッキレジスト２５を除去したときに形成され
るギャップＧに絶縁体を設けてもよい、この様にすれば
表面側最下層１６ａの保護が完全なものとなる。Furthermore, an insulator may be provided in the gap G formed when the plating resist 25 is removed. In this way, the bottom layer 16a on the front side can be completely protected.
第５ＩｓＡないし第７図は本発明に係る製造方法にて製
造されたいまひとつの可変抵抗器を示す。5IsA to 7 show another variable resistor manufactured by the manufacturing method according to the present invention.
この可変抵抗器は、前記第１図に示したものに対してコ
レクタ電極に代えて電極３０をその筒状部３１を絶縁基
板１０の中心孔１１に挿入した状態で設け、筒状部３１
の上部をかしめることにより摺動子２０を回動可能に取
り付けたもので、サーメット抵抗体１５の外部電極１６
、１６は前記第１実施例のものと同様の製造工程にて
三層構造とされ、ギャップＧを有している。In this variable resistor, an electrode 30 is provided in place of the collector electrode in the variable resistor shown in FIG.
The slider 20 is rotatably attached by caulking the upper part of the outer electrode 16 of the cermet resistor 15.
, 16 are formed into a three-layer structure by the same manufacturing process as that of the first embodiment, and have a gap G.
え肌五吃玉
以上の説明で明らかな様に、本発明によれば、最上層上
に少なくとも一層のメッキ層を設けて外部電極としたた
め、メッキ層が最下層の保護バリアとして作用し、最下
層に銀を使用するとしても、銀くわれを確実に肪止して
半田耐熱特性の向上を図ることができ、電極として必ず
しも高価な銀−パラジウム合金を使用しなくても済む、
また、メッキレジストをその端縁が表面側最下層に達す
る前に抵抗体上に設けた後メッキ層を形成する様にした
ため、メッキレジスト端縁の表面側最下層への密着性が
良好で抵抗体がメッキ層から完全に保護され、しかもメ
ッキ層と抵抗体とはギャップにて完全に分離され、メッ
キ層が抵抗体に接触して抵抗体の特性が劣化したり、メ
ッキ層が抵抗値の調整時等に剥がれて絶縁不良を生じた
りすることがなく、抵抗体やメッキレジストの印刷のば
らつきをも吸収でき、抵抗体の使用量も減少する。As is clear from the above explanation, according to the present invention, at least one plating layer is provided on the top layer to serve as an external electrode, so the plating layer acts as a protective barrier for the bottom layer and Even if silver is used in the lower layer, it is possible to reliably seal the silver holes and improve solder heat resistance, and it is not necessary to use an expensive silver-palladium alloy as an electrode.
In addition, because the plating layer is formed after the plating resist is placed on the resistor before its edge reaches the bottom layer on the surface side, the adhesion of the edge of the plating resist to the bottom layer on the surface side is good and the resistance The body is completely protected from the plating layer, and the plating layer and the resistor are completely separated by a gap, so that the plating layer does not come into contact with the resistor and the characteristics of the resistor deteriorate, or the plating layer has a low resistance value. It does not peel off during adjustment and cause poor insulation, can absorb variations in printing of resistors and plating resists, and reduces the amount of resistors used.
第１図ないし第４図は本発明に係る製造方法にて製造さ
れた可変抵抗器を示し、第１図は可変抵抗器の中央断面
図、第２図は摺動子の斜視図、第３図は絶縁基板の平面
図、第４図は外部電極の詳細を示すＡ−Ａ断面図である
。第５図ないし第７図はいまひとつの可変抵抗器を示し
、第５図は平面図、第６図は中央断面図、第７図は底面
図である。第８図は従来の可変抵抗器の絶縁基板の斜視
図、第９図はその外部電極を示す断面図である。
１０・・・絶縁基板、１５・・・サーメット抵抗体、１
６・・・外部電極、１６ａ・・・表面側最下層、１６８
′・・・端面側最下層、１６ａ−・・裏面側最下層、１
６ｂ、 １６ｃ・・・メッキ層、１７・・・フレフタ電
極、１８・・・外部電極、２０・・・摺動子、Ｇ・・・
ギャップ。1 to 4 show a variable resistor manufactured by the manufacturing method according to the present invention, in which FIG. 1 is a central sectional view of the variable resistor, FIG. 2 is a perspective view of a slider, and FIG. The figure is a plan view of the insulating substrate, and FIG. 4 is a sectional view taken along line A-A showing details of the external electrodes. 5 to 7 show another variable resistor, in which FIG. 5 is a plan view, FIG. 6 is a central sectional view, and FIG. 7 is a bottom view. FIG. 8 is a perspective view of an insulating substrate of a conventional variable resistor, and FIG. 9 is a sectional view showing its external electrode. 10... Insulating substrate, 15... Cermet resistor, 1
6... External electrode, 16a... Bottom layer on surface side, 168
'... Bottom layer on the end side, 16a-... Bottom layer on the back side, 1
6b, 16c...Plating layer, 17...Frefter electrode, 18...External electrode, 20...Slider, G...
gap.
Claims (1)
、抵抗体上を摺動する摺動子を回動可能に取り付けた可
変抵抗器の製造方法において、絶縁基板の端面近傍の表
面部にメッキが可能な表面側最下層と絶縁基板の端面に
メッキが可能な端面側最下層とを形成する工程と、 抵抗体を前記表面側最下層の一部を覆う様に設ける工程
と、 メッキレジストをその端縁が前記表面側最下層に達する
様に前記抵抗体上に設ける工程と、メッキ層を前記表面
側最下層の一部と前記端面側最下層とを覆う様に形成す
る工程と、 前記メッキレジストを除去する工程と、 を備えたことを特徴とする可変抵抗器の製造方法。(1) In a method for manufacturing a variable resistor in which a slider that slides on the resistor is rotatably attached to an insulating substrate on which an arcuate resistor is formed, the a step of forming a bottom layer on the surface side that can be plated on the surface portion and a bottom layer on the end surface side that can be plated on the end face of the insulating substrate; and a step of providing a resistor so as to cover a part of the bottom layer on the surface side. , providing a plating resist on the resistor so that its edge reaches the bottom layer on the front side, and forming a plating layer so as to cover a part of the bottom layer on the front side and the bottom layer on the end side. A method for manufacturing a variable resistor, comprising: a step of removing the plating resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62049744A JPS63215021A (en) | 1987-03-03 | 1987-03-03 | Manufacture of variable resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62049744A JPS63215021A (en) | 1987-03-03 | 1987-03-03 | Manufacture of variable resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63215021A true JPS63215021A (en) | 1988-09-07 |
Family
ID=12839697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62049744A Pending JPS63215021A (en) | 1987-03-03 | 1987-03-03 | Manufacture of variable resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63215021A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58107605A (en) * | 1981-12-21 | 1983-06-27 | 松下電器産業株式会社 | Method of producing chip resistor |
| JPS59186309A (en) * | 1983-04-07 | 1984-10-23 | 北陸電気工業株式会社 | Chip type variable resistor |
| JPS61102704A (en) * | 1984-10-26 | 1986-05-21 | ロ−ム株式会社 | Resistor |
-
1987
- 1987-03-03 JP JP62049744A patent/JPS63215021A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58107605A (en) * | 1981-12-21 | 1983-06-27 | 松下電器産業株式会社 | Method of producing chip resistor |
| JPS59186309A (en) * | 1983-04-07 | 1984-10-23 | 北陸電気工業株式会社 | Chip type variable resistor |
| JPS61102704A (en) * | 1984-10-26 | 1986-05-21 | ロ−ム株式会社 | Resistor |
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