JPS63212937A - フオトマスクブランクとフオトマスク - Google Patents
フオトマスクブランクとフオトマスクInfo
- Publication number
- JPS63212937A JPS63212937A JP62045469A JP4546987A JPS63212937A JP S63212937 A JPS63212937 A JP S63212937A JP 62045469 A JP62045469 A JP 62045469A JP 4546987 A JP4546987 A JP 4546987A JP S63212937 A JPS63212937 A JP S63212937A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- photomask
- molybdenum silicide
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 239000011229 interlayer Substances 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045469A JPS63212937A (ja) | 1987-02-28 | 1987-02-28 | フオトマスクブランクとフオトマスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045469A JPS63212937A (ja) | 1987-02-28 | 1987-02-28 | フオトマスクブランクとフオトマスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63212937A true JPS63212937A (ja) | 1988-09-05 |
| JPH0551893B2 JPH0551893B2 (fr) | 1993-08-03 |
Family
ID=12720242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62045469A Granted JPS63212937A (ja) | 1987-02-28 | 1987-02-28 | フオトマスクブランクとフオトマスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63212937A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007271720A (ja) * | 2006-03-30 | 2007-10-18 | Hoya Corp | マスクブランク及びフォトマスク |
| JP2008242500A (ja) * | 2008-06-26 | 2008-10-09 | Shin Etsu Chem Co Ltd | 位相シフトマスクブランクの製造方法及び位相シフトフォトマスクの製造方法 |
| JP2009294681A (ja) * | 2009-09-24 | 2009-12-17 | Shin-Etsu Chemical Co Ltd | フォトマスクブランク及びフォトマスク |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6252550A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | フオトマスク材料 |
-
1987
- 1987-02-28 JP JP62045469A patent/JPS63212937A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6252550A (ja) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | フオトマスク材料 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007271720A (ja) * | 2006-03-30 | 2007-10-18 | Hoya Corp | マスクブランク及びフォトマスク |
| JP2008242500A (ja) * | 2008-06-26 | 2008-10-09 | Shin Etsu Chem Co Ltd | 位相シフトマスクブランクの製造方法及び位相シフトフォトマスクの製造方法 |
| JP2009294681A (ja) * | 2009-09-24 | 2009-12-17 | Shin-Etsu Chemical Co Ltd | フォトマスクブランク及びフォトマスク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551893B2 (fr) | 1993-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |