JPS63210630A - Planar light detector - Google Patents
Planar light detectorInfo
- Publication number
- JPS63210630A JPS63210630A JP62046548A JP4654887A JPS63210630A JP S63210630 A JPS63210630 A JP S63210630A JP 62046548 A JP62046548 A JP 62046548A JP 4654887 A JP4654887 A JP 4654887A JP S63210630 A JPS63210630 A JP S63210630A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- surface electrode
- photoactive layer
- active layer
- optically active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 230000002950 deficient Effects 0.000 claims description 7
- 229910052798 chalcogen Inorganic materials 0.000 claims description 2
- 150000001787 chalcogens Chemical class 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はアモルファス半導体からなる光活性層を有す
る平面型の光検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a planar photodetector having a photoactive layer made of an amorphous semiconductor.
従来の技術とその問題点
アモルファス半導体を光センサ−、例えばカラーセンサ
ー、ラインセンサー、感光ドラムビディコンなどに使用
することは従来より行われている。2. Description of the Related Art Amorphous semiconductors have been conventionally used in optical sensors, such as color sensors, line sensors, photosensitive drum vidicons, and the like.
これらのうち、片方の電極のみしか必要としないセンサ
ーあるいはギャップ電極を有するセンサーは、感光膜の
欠陥に対して強いが、一方、光活性層を挾み込む形のい
わゆるサンドイッチ型のセンサーにおいては膜の欠陥部
の表面電極と裏面電極間でのリーク電流がシャント抵抗
の低下により、Ｖ−１カーブのＦＦ（フィルファクタ）
、 Ｖｏｃ（開放電圧）等が低下し、光電変換効率が低
下するなどの素子特性を低下させる。これに対して、こ
の欠陥部分をレーザーで焼き切る、あるいは陽極酸化法
で欠陥部に酸化膜を堆ｈ１させる等の工夫をし、素子特
性の向上を図っている。この方法では、外観不良が生じ
たり、シリーズ抵抗が増大するという欠点がある。Among these, sensors that require only one electrode or sensors that have a gap electrode are resistant to defects in the photoresist film, but on the other hand, in so-called sandwich-type sensors that sandwich a photoactive layer, The leakage current between the front and back electrodes at the defective part of the V-1 curve decreases due to the decrease in shunt resistance.
, Voc (open circuit voltage), etc. are reduced, and device characteristics such as photoelectric conversion efficiency are reduced. In response, attempts have been made to improve the device characteristics by burning out the defective portions with a laser or depositing an oxide film on the defective portions using an anodic oxidation method. This method has drawbacks such as poor appearance and increased series resistance.
発明が解決すべき問題点
上述のような平面型の光センサーの大面積化とさらに、
膜の欠陥によるリーク電流の増大が生じ、素子特性が劣
化する。この発明は膜の欠陥により生じるリーク電流の
発生を阻止し、良好な素子特性を有する光検出器を提供
することを目的とする。Problems to be solved by the invention In addition to increasing the area of the flat optical sensor as described above,
Leakage current increases due to defects in the film, and device characteristics deteriorate. An object of the present invention is to provide a photodetector that prevents leakage current caused by film defects and has good device characteristics.
問題点を解決する手段
上述の目的を達成するために、この発明の光検出器は、
電極ををする支持体ｉ上に、アモルファス半導体からな
る光活性層２を堆積し、さらに表面電極を堆積させた光
検出装置において、図示のように光活性層の欠陥部分の
表面電極を不活性化３した構造を持ち、かつ電極除去部
の光活性層が熱的あるいは機械的には除去されていない
ことを特徴とする。Means for Solving the Problems In order to achieve the above-mentioned objects, the photodetector of the present invention comprises:
In a photodetecting device in which a photoactive layer 2 made of an amorphous semiconductor is deposited on a support i that serves as an electrode, and a surface electrode is further deposited, the surface electrode in the defective portion of the photoactive layer is inactivated as shown in the figure. The photoactive layer in the electrode removed portion is not removed thermally or mechanically.
肌
上述の構成により本発明においては、２つの電極で光活
性層を挾み込んだサンドイッヂ型の光センサーの欠陥部
位の電極のみをとり除くのでり−ク電流がふ１少し、こ
れによって、素子の並列抵抗が高くなり特性の向上が得
られる。Skin With the above-described structure, in the present invention, only the electrode at the defective site of a sandwich-type photosensor in which a photoactive layer is sandwiched between two electrodes is removed, so that the leakage current is slightly reduced. Parallel resistance increases, resulting in improved characteristics.
アモルファス半導体としては、カルコゲン元素を含むＣ
ｄＳ、ａ−Ｓｅ、ＣｄＳｅ、Ｃｄ’ｌ’ｅ、ＡｓｎＴｅ
ｙや■属元索を含む゛、ａ −Ｓ ｉ：ＩＩ、 ａ −
Ｓ ｉＧｅ：ＩＩ。As an amorphous semiconductor, C containing a chalcogen element is used.
dS, a-Se, CdSe, Cd'l'e, AsnTe
Including y and ■ genus search゛, a-S i:II, a-
S iGe:II.
ａ −Ｓ ｉＳｕ：Ｉ−１，ａ −Ｓ ｉＣ：Ｈ，ａ
−Ｓ ｉＮ：Ｉ−１，ａ −５ｉＦ：ＩＩ、ａ−ＳｉＧ
ｅ：Ｆ：Ｈ，ａ−ＳｉＣ：Ｆ：Ｈ，ａ−ＧｅＨ，ａ−Ｇ
ｅ：Ｆ：）［、などが上げられる。センサーの構成は、
支持体／１１１極／アモルファス半導体／電極（表面）
であり、表面電極が透明あるいは半透明かつまたは、支
持体／電極か半透明あるいは透明である。a -S iSu:I-1,a -S iC:H,a
-SiN:I-1,a -5iF:II,a-SiG
e:F:H, a-SiC:F:H, a-GeH, a-G
Examples include e:F:)[, etc. The configuration of the sensor is
Support / 111 poles / amorphous semiconductor / electrode (surface)
and the surface electrode is transparent or translucent and/or the support/electrode is translucent or transparent.
光活性層は上記半導体の中から複数を選択し積属するこ
とが可能である。例えば、ａ−９ｉＣ：）［／ａ −Ｓ
ｉＣ：Ｈ／ａ −Ｓ ｉ：Ｃ：Ｈ，ａ −Ｓ ｉＣ：
Ｈ（ｐ型）／ａ−ＳｉＨ（ｉ型）／ａ −Ｓ ｉ：ＩＩ
（ｎ型）、ａ−ＳｉＮ：Ｈ／ａ−９ｉ： 夏１／ａ −
Ｓ ｉＮ ：Ｉ−ｆ 、 ａ−Ｓ ｉＣ（Ｐ型
）／ａ−Ｓ ｉ：Ｉ−ｆ／ａ −Ｓ １ＧｅＨ／ ａ
−Ｓ １１４（ｎ型）、ａ−ＳｉＨ（ｐ型）／ａ −Ｓ
１ＧｅＦ ：Ｈ／ａ −Ｓ ｉＧｅ：Ｆ ：ｌ−１（
ｎ型）あるいはａ−Ｓｅ／ＡｓｘＳｅｙ、ａ−Ｓｅ／Ｃ
ｄＴｅ、ＣｄＳ／Ｓｅ、さらには、ａ−Ｓｉ系のｐｎｌ
’ｎ”’＋ ｐｔｎｐｔｎ・・・、ａ −Ｓ ｉｃ／ａ
−Ｓ ｉＨ／ａ −Ｓ ｉＣ／ａ −Ｓ ｉＨ／＝−
、ａ −Ｓ ｉＮ／ａ −Ｓ ｉＮ／ａ −Ｓ ｉｈ／
−、等のマルチジャンクションがある。電極材料として
は、Ｉ↑Ｏ，５ｕＯｔ（Ｆ）、ＺｎＯ等の透明電導性膜
、Ａｕ、 Ａｇ、 Ｐｔ、 Ｐｄ、 Ｏｒ、 ＡＩ、
Ｎｉ、 Ｚｒ、 Ｚｎ。The photoactive layer can be formed by selecting a plurality of semiconductors from among the above semiconductors. For example, a-9iC:)[/a-S
iC:H/a-S i:C:H,a-S iC:
H (p type)/a-SiH (i type)/a-Si:II
(n type), a-SiN:H/a-9i: Summer 1/a -
S iN:I-f, a-S iC (P type)/a-S i:I-f/a -S 1GeH/a
-S 114 (n type), a-SiH (p type)/a -S
1GeF :H/a-S iGe:F :l-1(
n type) or a-Se/AsxSey, a-Se/C
dTe, CdS/Se, and even a-Si based pnl
'n'''+ ptnptn..., a -S ic/a
-S iH/a -S iC/a -S iH/=-
, a −S iN/a −S iN/a −S ih/
There are multiple junctions such as -, etc. As electrode materials, transparent conductive films such as I↑O, 5uOt(F), ZnO, Au, Ag, Pt, Pd, Or, AI,
Ni, Zr, Zn.
Ｆｅ等が使用できる。電極の除去は、金属の溶解性の良
い液中で支持体／？Ｉ極側を正極とし、液中にＰｔ対向
電極を配置し、Ｐｔ側負極の条件で欠陥部表面電極の選
択エツチングを行う。Fe etc. can be used. The electrode can be removed from the support in a liquid with good metal solubility. The I electrode side is used as a positive electrode, a Pt counter electrode is placed in the solution, and selective etching of the defect surface electrode is performed under the conditions of the Pt side being a negative electrode.
支持体としては、ガラス、ポリイミド、ポリエステル、
ポリマーをコーティングした金属板ステンレス、アルミ
などを用いることができる。Supports include glass, polyimide, polyester,
A metal plate coated with polymer, stainless steel, aluminum, etc. can be used.
ＩＴＯ／半導体／Ａｌ＋Ｍ成におけるＩＴＯを正極とし
、酢酸水溶液中でＡＩの選択エツチングを行ってもよい
。ＩＴＯ／半導体／Ｃｒ構成におけるＩＴＯを正極とし
、塩酸水溶液中でのＯｒのエツチングを行ってもよい。Selective etching of AI may be performed in an acetic acid aqueous solution using ITO in the ITO/semiconductor/Al+M composition as a positive electrode. Or may be etched in an aqueous hydrochloric acid solution using ITO in an ITO/semiconductor/Cr configuration as a positive electrode.
笈夜性
ｌ、ガラス／ＩＴＯ基板上にＶｒ、グロー放電法を用い
て、ａ−８ｉｐ−ｉ−ｎダイオードを形成し、その裏面
電極としてアルミニウムを抵抗加熱法により疏着した。An a-8 IP-IN diode was formed on a glass/ITO substrate using Vr and a glow discharge method, and aluminum was bonded as a back electrode using a resistance heating method.
この裏面電極の有効面積は８０ｃｘ２であった。このダ
イオードのＶ−１特性を測定したところ、整流特性が悪
く、光電流Ｖ−を特性ら小面積ダイオードに比べて劣っ
ている。このダイオードのｐ側電極をエポキシ樹脂でコ
ートし、１％の酢酸水溶液でｐ側電極を正に、それから
３ｃ１１′Ｍれた液中にｐｔ板（１０ｃｘＸ １０ｃｍ
）を浸漬し、これを負にバイアスした。１＋ａＡの電流
を３分間流した後、ダイオードを純水で洗浄し乾燥後、
再度暗時のＶ−１カーブと１．Ｏｖと＋！、ＯＶでの整
流比を調べたところ、整流比は１０’以上あり、良好な
整流特性を示した。また、光照射時のＶ−■カーブらＶ
ｏｃ、ＦＦに向上が見られ、Ｖｏｃ＝０゜９Ｖ、ＦＦ＝
６０％（ＡＭ −ｒ Ｉ Ｏ（ｌｖｗ／ｃｍ”）、Ｖｏ
ｃ＝０．６Ｖ％ＦＦ＝７０％（蛍光灯下、２００１ｕｘ
）の性能を示した。The effective area of this back electrode was 80cx2. When the V-1 characteristics of this diode were measured, the rectification characteristics were poor, and the photocurrent V- characteristics were inferior to those of small-area diodes. Coat the p-side electrode of this diode with epoxy resin, coat the p-side electrode with 1% acetic acid aqueous solution, and place a PT plate (10cm x 10cm) in the solution.
), which was negatively biased. After passing a current of 1+aA for 3 minutes, the diode was washed with pure water and dried.
Again, the V-1 curve in the dark and 1. Ov and +! When the rectification ratio was examined at OV, the rectification ratio was 10' or more, indicating good rectification characteristics. In addition, V-■ curve et al. V at the time of light irradiation
Improvements were seen in oc and FF, Voc=0°9V, FF=
60% (AM-r IO (lvw/cm”), Vo
c=0.6V%FF=70% (under fluorescent light, 2001ux
) showed the performance.
２、実施例！において、裏面電極にＣｖを用い、水溶液
を０．ＩＮ塩酸水溶液に代えて、順パイアスを与えた。2. Examples! In this case, Cv was used as the back electrode, and the aqueous solution was heated to 0. In place of the IN aqueous hydrochloric acid solution, Junpais was given.
ＩｍＡの電流を３分間流したところ、当初、暗時のＶ−
１、光照射時のＶ−１特性が悪かったセル（はとんどの
セル性能が出なかったもの）の性能が回復し、Ｖｏｃ＝
０．８９ＶＳＦＦ’＝５５％ＣＡＭ −１−４００ｍｗ
／ｃｍ”）、Ｖｏｃ＝０．５９Ｖ、ＰＦ＝Ｇ５％（蛍光
灯下、２００１ｕｘ）の性能を示した。When a current of ImA was applied for 3 minutes, the V-
1. The performance of cells with poor V-1 characteristics during light irradiation (i.e. cells that did not have the best cell performance) recovered, and Voc=
0.89VSFF'=55%CAM -1-400mw
/cm”), Voc=0.59V, PF=G5% (under fluorescent light, 2001ux).
発明の効果
本発明においては、２つの電極で光活性層を挾み込んだ
ザンドイッヂ型の光センサーの欠陥部位を従来のように
、破壊あるいは非導電性物質で覆うのではなく、電極の
みをその部位だけとり除くなどの方法で不活性化したの
で素子の並列抵抗が高くなり、リーク電流カリ大少し素
子の特性の著しい向上が得られた。Effects of the Invention In the present invention, instead of destroying or covering the defective part of a Zandwidge-type optical sensor in which a photoactive layer is sandwiched between two electrodes with a non-conductive material as in the conventional method, only the electrodes are destroyed. Since the element was inactivated by removing only the parts, the parallel resistance of the element was increased, and the characteristics of the element were significantly improved by reducing the leakage current.
第１図はこの発明の平面光検出装置の一例の平面図であ
る。
１・・・支持体、 ２・・・光活性層、 ３・・・不活
性化部。
第１図FIG. 1 is a plan view of an example of the flat light detection device of the present invention. DESCRIPTION OF SYMBOLS 1...Support, 2...Photoactive layer, 3...Inactivation part. Figure 1
Claims (4)
らなる光活性層を堆積し、さらに表面電極を堆積させた
光検出装置において、光活性層の欠陥部分の表面電極を
不活性化した構造を持ち、かつ電極除去部の光活性層が
熱的あるいは機械的には除去されていないことを特徴と
する光検出装置。(1) In a photodetecting device in which a photoactive layer made of an amorphous semiconductor is deposited on a support having an electrode, and a surface electrode is further deposited, the surface electrode in the defective portion of the photoactive layer is inactivated. 1. A photodetecting device characterized in that the photoactive layer in the electrode removed portion is not removed thermally or mechanically.
含む特許請求の範囲第１項に記載の光検出装置。(2) The photodetection device according to claim 1, wherein the amorphous semiconductor contains silicon as a constituent atom.
元素を含む特許請求の範囲第１項に記載の光検出装置。(3) The photodetection device according to claim 1, wherein the amorphous semiconductor contains a chalcogen element as a constituent atom.
のうち少なくとも２つの型の組合わせからなることを特
徴とする光検出装置。(4) A photodetection device characterized in that the amorphous semiconductor photoactive layer is a combination of at least two types among p-type, i-type, and n-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62046548A JPS63210630A (en) | 1987-02-26 | 1987-02-26 | Planar light detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62046548A JPS63210630A (en) | 1987-02-26 | 1987-02-26 | Planar light detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63210630A true JPS63210630A (en) | 1988-09-01 |
| JPH0567166B2 JPH0567166B2 (en) | 1993-09-24 |
Family
ID=12750366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62046548A Granted JPS63210630A (en) | 1987-02-26 | 1987-02-26 | Planar light detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63210630A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| JPS5994473A (en) * | 1982-10-21 | 1984-05-31 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Method and system for detecting and removing shortcircuitingcurrent passage of photocell device |
| JPS60183777A (en) * | 1984-03-02 | 1985-09-19 | Hitachi Ltd | Manufacture of amorphous silicon solar cell |
-
1987
- 1987-02-26 JP JP62046548A patent/JPS63210630A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| JPS5994473A (en) * | 1982-10-21 | 1984-05-31 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Method and system for detecting and removing shortcircuitingcurrent passage of photocell device |
| JPS60183777A (en) * | 1984-03-02 | 1985-09-19 | Hitachi Ltd | Manufacture of amorphous silicon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567166B2 (en) | 1993-09-24 |
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