JPS6319579U - - Google Patents
Info
- Publication number
- JPS6319579U JPS6319579U JP11029486U JP11029486U JPS6319579U JP S6319579 U JPS6319579 U JP S6319579U JP 11029486 U JP11029486 U JP 11029486U JP 11029486 U JP11029486 U JP 11029486U JP S6319579 U JPS6319579 U JP S6319579U
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- tube
- quartz tube
- horizontal adjustment
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 3
- -1 GaAs compound Chemical class 0.000 claims 1
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000007796 conventional method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11029486U JPS6319579U (enrdf_load_stackoverflow) | 1986-07-18 | 1986-07-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11029486U JPS6319579U (enrdf_load_stackoverflow) | 1986-07-18 | 1986-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6319579U true JPS6319579U (enrdf_load_stackoverflow) | 1988-02-09 |
Family
ID=30989182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11029486U Pending JPS6319579U (enrdf_load_stackoverflow) | 1986-07-18 | 1986-07-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319579U (enrdf_load_stackoverflow) |
-
1986
- 1986-07-18 JP JP11029486U patent/JPS6319579U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0389533A4 (en) | Sublimation growth of silicon carbide single crystals | |
| MY122821A (en) | Iii-v nitride substrate boule and method of making and using the same | |
| EP0969499A3 (en) | Crystal growth process for a semiconductor device | |
| DE69705545D1 (de) | Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen | |
| JPH0637354B2 (ja) | 炭化珪素単結晶成長方法および装置 | |
| JPS6319579U (enrdf_load_stackoverflow) | ||
| MY133116A (en) | Process for preparing defect free silicon crystals which allows for variability in process conditions | |
| JP3787888B2 (ja) | 結晶の育成方法及び育成用ルツボ | |
| JPH0442911Y2 (enrdf_load_stackoverflow) | ||
| JPH0733303B2 (ja) | 結晶成長装置 | |
| JP2751359B2 (ja) | ▲iii▼―▲v▼族化合物単結晶 | |
| JP2760819B2 (ja) | ボート成長法による化合物半導体製造方法及び製造装置 | |
| JPS5776821A (en) | Liquid phase epitaxial growing method | |
| JP2546746Y2 (ja) | 垂直ブリッジマン法用るつぼ | |
| JPS6344463Y2 (enrdf_load_stackoverflow) | ||
| JPS6421074A (en) | Method for selectively growing thin metallic film | |
| JPH07237999A (ja) | 炭化珪素単結晶の成長方法 | |
| JPH01305898A (ja) | 炭化珪素単結晶製造方法および装置 | |
| JPS63186775U (enrdf_load_stackoverflow) | ||
| JPH0225572U (enrdf_load_stackoverflow) | ||
| JP2706272B2 (ja) | 化合物半導体単結晶の成長方法 | |
| JP2726887B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPH034028Y2 (enrdf_load_stackoverflow) | ||
| JPS6419715A (en) | Growth method for semiconductor thin-film | |
| Yamamoto et al. | The Solid-Phase Epitaxial Growth Method |