JPS6319579U - - Google Patents

Info

Publication number
JPS6319579U
JPS6319579U JP11029486U JP11029486U JPS6319579U JP S6319579 U JPS6319579 U JP S6319579U JP 11029486 U JP11029486 U JP 11029486U JP 11029486 U JP11029486 U JP 11029486U JP S6319579 U JPS6319579 U JP S6319579U
Authority
JP
Japan
Prior art keywords
quartz
tube
quartz tube
horizontal adjustment
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11029486U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11029486U priority Critical patent/JPS6319579U/ja
Publication of JPS6319579U publication Critical patent/JPS6319579U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11029486U 1986-07-18 1986-07-18 Pending JPS6319579U (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11029486U JPS6319579U (enrdf_load_stackoverflow) 1986-07-18 1986-07-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11029486U JPS6319579U (enrdf_load_stackoverflow) 1986-07-18 1986-07-18

Publications (1)

Publication Number Publication Date
JPS6319579U true JPS6319579U (enrdf_load_stackoverflow) 1988-02-09

Family

ID=30989182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11029486U Pending JPS6319579U (enrdf_load_stackoverflow) 1986-07-18 1986-07-18

Country Status (1)

Country Link
JP (1) JPS6319579U (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
EP0389533A4 (en) Sublimation growth of silicon carbide single crystals
MY122821A (en) Iii-v nitride substrate boule and method of making and using the same
EP0969499A3 (en) Crystal growth process for a semiconductor device
ATE202807T1 (de) Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen
JPH0637354B2 (ja) 炭化珪素単結晶成長方法および装置
JPS6319579U (enrdf_load_stackoverflow)
MY133116A (en) Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3787888B2 (ja) 結晶の育成方法及び育成用ルツボ
JPH0442911Y2 (enrdf_load_stackoverflow)
JP2732393B2 (ja) シリンダー型シリコンエピタキシャル層成長装置
JPH0733303B2 (ja) 結晶成長装置
JP2751359B2 (ja) ▲iii▼―▲v▼族化合物単結晶
JP2760819B2 (ja) ボート成長法による化合物半導体製造方法及び製造装置
JPS5776821A (en) Liquid phase epitaxial growing method
JP2546746Y2 (ja) 垂直ブリッジマン法用るつぼ
JPS6344463Y2 (enrdf_load_stackoverflow)
JPH0449185Y2 (enrdf_load_stackoverflow)
JPH07237999A (ja) 炭化珪素単結晶の成長方法
JPS63186775U (enrdf_load_stackoverflow)
JPH0225572U (enrdf_load_stackoverflow)
JP2706272B2 (ja) 化合物半導体単結晶の成長方法
JP2726887B2 (ja) 化合物半導体単結晶の製造方法
JPH034028Y2 (enrdf_load_stackoverflow)
JPS5921594A (ja) ルツボ
JPS6419715A (en) Growth method for semiconductor thin-film