JPS63190331A - Equipment for manufacturing semiconductor - Google Patents
Equipment for manufacturing semiconductorInfo
- Publication number
- JPS63190331A JPS63190331A JP13712685A JP13712685A JPS63190331A JP S63190331 A JPS63190331 A JP S63190331A JP 13712685 A JP13712685 A JP 13712685A JP 13712685 A JP13712685 A JP 13712685A JP S63190331 A JPS63190331 A JP S63190331A
- Authority
- JP
- Japan
- Prior art keywords
- shutter plate
- plate
- wafer
- shutter
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 29
- 241000257465 Echinoidea Species 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 244000005687 Poranopsis paniculata Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造装置に関し、特にスパッタ装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to sputtering equipment.
従来のスパッタ装置を第３図を用いて説明する。 A conventional sputtering apparatus will be explained using FIG. 3.
図において、４１はチャンバー、４２はターゲット部、
４３はシールド板、４４はウェハー、４５はシャッター
板回転軸、４６はフィードスルー、４７はシャッター板
取付金具、４８はシャッター板である。In the figure, 41 is a chamber, 42 is a target part,
43 is a shield plate, 44 is a wafer, 45 is a shutter plate rotating shaft, 46 is a feed through, 47 is a shutter plate mounting bracket, and 48 is a shutter plate.
従来、この種のスパッタ装置では、複数のターゲットを
同一チャンパー４１内に設置し、スパッタを行うターゲ
ット部までウェハースを搬送し、ターゲット４２を放電
させ、シャッター板回転軸４５を回転駆動することによ
り、シャッター板４８を開き、ウェハー４４に付着する
。この際、ウェハー以外の装置への付着を防ぐ為に、シ
ールド板４３を設置していた。また、連続して複数のウ
ェハースに付着を行う場合を第４図を用いて説明する。Conventionally, in this type of sputtering apparatus, a plurality of targets are installed in the same chamber 41, the wafer is transported to the target section where sputtering is performed, the target 42 is discharged, and the shutter plate rotation shaft 45 is rotationally driven. The shutter plate 48 is opened and the wafer 44 is attached. At this time, a shield plate 43 was installed to prevent adhesion to devices other than the wafer. Further, a case in which deposition is performed on a plurality of wafers in succession will be explained using FIG. 4.
ターケ・ット５２でスノぐツタし、ウェハー５４に付着
させる場合に、付着直前のウェハーは５５の位置に待機
している。ターゲット部５３はスパッタしておらず、シ
ャッター板５７が閉まっているものとする。従来のスパ
ッタ装置では、ウェハー近くには、シールド板５６があ
るのみであり、シールド板に空けられたウニ・・−上の
穴と、シャッター板５７との間に距離があった。これは
シールド板５６がシャッター板とウニ・・−の間で前後
に動作する等の理由の為、距離がおかれているものであ
った。When the target 52 is used to attach the wafer to the wafer 54, the wafer just before being attached is waiting at a position 55. It is assumed that the target portion 53 is not sputtered and the shutter plate 57 is closed. In the conventional sputtering apparatus, there is only a shield plate 56 near the wafer, and there is a distance between the hole made in the shield plate above the sea urchin and the shutter plate 57. This is due to the fact that the shield plate 56 moves back and forth between the shutter plate and the sea urchin, etc., so that the distance between them is kept.
上述した従来のス・やツタ装置では連続して複数のウェ
ハースに付着する場合、位置５５の付着直前のウェハー
はスパッタ中のターゲット５２と同一のチャンバー内の
近接した位置に待機している。In the above-described conventional sputtering apparatus, when a plurality of wafers are successively deposited, the wafer immediately before being deposited at position 55 waits at a position close to the target 52 in the same chamber as the sputtering target 52.
しかも、ウェハー周りにはシール噸５６があるのみで、
ウェハー表面が顕わになっている為、スｉＥツタ中のタ
ーゲット５２からスパッタされた物質が位置５５の待機
中のウェハーまで破線の経路をたどって回り込み、付着
される問題があった。この回り込んで付着される物質は
僅かであるが、チャンバー内の各種残留ガスと反応した
、反応物質となっている為、この反応物質がウェハーの
半導体装置に電気的悪影響を及ぼす欠点がある。Moreover, there is only a seal 56 around the wafer.
Since the wafer surface is exposed, there is a problem in that the material sputtered from the target 52 in the SiE vines follows the path indicated by the broken line to the waiting wafer at position 55 and is deposited thereon. Although only a small amount of the substance that wraps around and adheres to the wafer, it is a reactive substance that has reacted with various residual gases in the chamber, and has the disadvantage that this reactive substance has an adverse electrical effect on the semiconductor devices on the wafer.
本発明は前記問題点を解消した装置を提供するものであ
る。The present invention provides an apparatus that solves the above problems.
本発明は半導体装置の製造に用いるスパッタ機構を備え
た装置において、
ターゲットとウェノ・−間に位置する第１シャッター板
と、
ウェハー周辺に取付けられたシールド板と、第１シャッ
ター板とシールド板の間に位置する第２シャッター板と
を有することを特徴とする半導体製造装置である。The present invention provides an apparatus equipped with a sputtering mechanism used for manufacturing semiconductor devices, which includes: a first shutter plate located between a target and a wafer; a shield plate attached around the wafer; and a space between the first shutter plate and the shield plate. The semiconductor manufacturing apparatus is characterized in that it has a second shutter plate located therein.
次に本発明の一実施例について図面を参照して説明する
。第１図は本発明の一実施例の縦断面図である。１１は
チャンバー、１２はターゲット部、１３はシールド板、
１４はウェハー、１５はシャッター回転軸、 １６はフ
ィードスルー、１７は第１シャッター板取付金具、１８
は第１シャッター板、１９は第２シャッター板取付金具
、２０は第２シャッター板、・２１はシャッター回転軸
受は皿である。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. 11 is a chamber, 12 is a target part, 13 is a shield plate,
14 is a wafer, 15 is a shutter rotation axis, 16 is a feed through, 17 is a first shutter plate mounting bracket, 18
19 is a first shutter plate, 19 is a second shutter plate mounting bracket, 20 is a second shutter plate, and 21 is a plate for the shutter rotation bearing.
この実施例では、第２シャッター板２０が第１シャッタ
ー板回転軸上に取り付けられ、シールド板１３と近接す
る様になっている。In this embodiment, the second shutter plate 20 is mounted on the first shutter plate rotation axis and is in close proximity to the shield plate 13.
第２シャッター板２０は、第１シャッター板１８の開閉
と連動して開閉する。また、第２シャッター板取付は金
具１９を、第１シャッター板取付は金具１７にバネを介
して接続することにより、シールド板１３がウェハーと
ターゲット間で前後に動作する場合でも、この動作の障
害とならない様にすることができる。The second shutter plate 20 opens and closes in conjunction with the opening and closing of the first shutter plate 18. In addition, by connecting the second shutter plate to the metal fitting 19 and the first shutter plate to the metal fitting 17 via springs, even if the shield plate 13 moves back and forth between the wafer and the target, this movement can be prevented. It is possible to prevent this from happening.
また、第２シャッター板の回転軸を独立に設置し、第１
シャッター板とは独立に動作できるようにし、シャッタ
ー板が取り付けであるターゲットが使用されるよう選ば
れている期間中のみ開くようにしても良い。In addition, the rotation axis of the second shutter plate is installed independently, and the
It may be operable independently of the shutter plate, so that the shutter plate is only open during periods when the target to which it is attached is selected to be used.
次に複数枚のウェハーを連続して付着する場合を、第２
図を用いて説明する。３２はスノクツタ中のターゲット
部、３４は付着しているウェノ−−，３３はス／ｆツタ
していないターゲット部、３５は付着直前の待機中ウェ
ハー、３６はシールド板、３７は第１シャッター板、３
８は第２シャッター板である。待機中のウェハー３５の
所では、ターゲット３３はスノｆツタを行っておらず、
第１シャッター板３７、及び本発明に依る第２シャッタ
ー板３８は閉じている状態に有る。第２シャッター板３
８はシールド板に近接ｒ へ ）
した位置にあることから、シールド板に開けられたウェ
ハー上の穴を十分に覆うことができる。Next, the case where multiple wafers are attached in succession is explained in the second step.
This will be explained using figures. Reference numeral 32 indicates the target part in the snow vine, 34 indicates the adhering wafer, 33 indicates the target part which is not attached, 35 indicates the waiting wafer just before attachment, 36 indicates the shield plate, and 37 indicates the first shutter plate. ,3
8 is a second shutter plate. At the waiting wafer 35, the target 33 is not performing snowfall,
The first shutter plate 37 and the second shutter plate 38 according to the invention are in a closed state. Second shutter plate 3
Since the point 8 is located close to the shield plate, it is possible to sufficiently cover the hole on the wafer made in the shield plate.
以上説明したように本発明は第２シャッター板を取り付
けることにより、複数枚のウニ・・−を連続付着する場
合、待機中のウェハースの所では、第２シャッター板が
閉まっており、しかも、シールド板と非常に近接してい
ることにより、シールド板に開けられたウェハー上の穴
を第２シャッター板で十分に覆うことができ、スパッタ
中のターゲットからスｉＪ？ツタされた物質が待機中の
ウェハーへ、破線の経路をたどって回り込み飛着するも
のを第２シャッター板で阻子することができる。As explained above, in the present invention, by attaching the second shutter plate, when a plurality of sea urchins are attached continuously, the second shutter plate is closed at the waiting wafer, and the shield is closed. Due to its close proximity to the second shutter plate, the hole on the wafer made in the shield plate can be sufficiently covered by the second shutter plate, and the second shutter plate can be used to protect the target during sputtering. The second shutter plate can prevent the dripped material from flying around and landing on the waiting wafer by following the path indicated by the broken line.
したがって、回り込み飛着が防止できることより、ス・
やフタ物質と、チャンバー内残留ガスと反応した反応物
質が回り込みによってウニ・・−に飛着することから起
る半導体装置の電気的特性の悪化を防止できる効果を有
するものである。Therefore, since flying around can be prevented,
This has the effect of preventing the deterioration of the electrical characteristics of the semiconductor device caused by the reaction material reacting with the gas remaining in the chamber and the gas remaining in the chamber circulating around and landing on the sea urchin.
第１図は本発明の一実施例の縦断面図、第２図は本発明
により連続してスパッタを行う場合の説明図、第３図は
従来例を示す縦断面図、第４図は従来例により連続して
スパッタを行う説明図である。
１１はチャンバー、１２はターケ８ット部、１３はシー
ルド板、１４はウェハー、１５はシャッター板回転軸、
１６はフィードスルー、１７は第１シャッター板取付金
具、１８は第１シャッター板、１９は第２シャッター板
取付金具、２０は第２シャッター板、２１はシャッター
回転軸受は皿である。
兎２図
范３図Fig. 1 is a longitudinal cross-sectional view of an embodiment of the present invention, Fig. 2 is an explanatory diagram when sputtering is performed continuously according to the present invention, Fig. 3 is a longitudinal cross-sectional view showing a conventional example, and Fig. 4 is a conventional example. It is an explanatory view in which sputtering is performed continuously by example. 11 is a chamber, 12 is a target part, 13 is a shield plate, 14 is a wafer, 15 is a shutter plate rotation axis,
16 is a feedthrough, 17 is a first shutter plate mounting bracket, 18 is a first shutter plate, 19 is a second shutter plate mounting bracket, 20 is a second shutter plate, and 21 is a plate for the shutter rotation bearing. Rabbit 2 illustration Fan 3 illustration
Claims (1)
装置において、 ターゲットとウェハー間に位置する第１シャッター板と
、 ウェハー周辺に取付けられたシールド板と、第１シャッ
ター板とシールド板の間に位置する第２シャッター板と
を有することを特徴とする半導体製造装置。(1) In an apparatus equipped with a sputtering mechanism used for manufacturing semiconductor devices, a first shutter plate located between the target and the wafer, a shield plate attached around the wafer, and a first shutter plate located between the first shutter plate and the shield plate A semiconductor manufacturing apparatus comprising: a second shutter plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13712685A JPS63190331A (en) | 1985-06-24 | 1985-06-24 | Equipment for manufacturing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13712685A JPS63190331A (en) | 1985-06-24 | 1985-06-24 | Equipment for manufacturing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63190331A true JPS63190331A (en) | 1988-08-05 |
Family
ID=15191425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13712685A Pending JPS63190331A (en) | 1985-06-24 | 1985-06-24 | Equipment for manufacturing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63190331A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070044891A (en) * | 2005-10-26 | 2007-05-02 | 엘지전자 주식회사 | Deposition apparatus |
| US20110147199A1 (en) * | 2009-12-22 | 2011-06-23 | Canon Anelva Corporation | Sputtering apparatus and electronic device manufacturing method |
| CN104428885A (en) * | 2012-07-17 | 2015-03-18 | 应用材料公司 | Two piece shutter disk assembly for substrate process chamber |
-
1985
- 1985-06-24 JP JP13712685A patent/JPS63190331A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070044891A (en) * | 2005-10-26 | 2007-05-02 | 엘지전자 주식회사 | Deposition apparatus |
| US20110147199A1 (en) * | 2009-12-22 | 2011-06-23 | Canon Anelva Corporation | Sputtering apparatus and electronic device manufacturing method |
| US8652309B2 (en) * | 2009-12-22 | 2014-02-18 | Canon Anelva Corporation | Sputtering apparatus and electronic device manufacturing method |
| CN104428885A (en) * | 2012-07-17 | 2015-03-18 | 应用材料公司 | Two piece shutter disk assembly for substrate process chamber |
| CN104428885B (en) * | 2012-07-17 | 2017-09-12 | 应用材料公司 | Two-piece type flapper disk component for substrate processing chamber |
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