JPS62250173A - Shield for sputtering source - Google Patents

Abstract

PURPOSE:To allow a sputtered target material to come only in approximately the same area as the area of an Si wafer by covering a sputtering source and a shutter movable range of a sputtering device with a shielding material and providing an aperture of approximately the same area as the area of the Si wafer to the shielding material. CONSTITUTION:The sputtering source 2 is provided on the vacuum side on the wall surface of a vacuum vessel 1 and the Si wafer 3 is attached to face the same by a holder 4. The sputtering source shield 8 formed by having the aperture of approximately the same area as the area of the sputtering source 2 and movably attached with a shutter plate 6 to a cylinder having the aperture of approximately the same area as the area of the Si wafer 3 is fixed by screws 11 to the shield 7. The shutter 6 is housed into the box part of the shield 8 when the shutter 6 is opened at the time of forming a thin film on the Si wafer 3 by sputtering. The target material sputtered from the sputtering sources passes the aperture of the area approximately the same area of the Si wafer 3 so that only the target material of the area approximately the same as the area of the Si wafer splashes onto the Si wafer. The incoming of a large amt. of the target material to the part except the Si wafer surface is thus prevented.

Description

[Detailed Description of the Invention] [Field of Commercial Application] The present invention relates to a shield for a sputtering source, and in particular to a shield for a sputtering source that prevents sputtered target material from flying over approximately the same area as the silicon wafer being deposited. The present invention relates to a shield for a sputtering source.

[Conventional technology]

Conventionally, this type of shield has a sputter source 2 on the vacuum side of one wall of a vacuum chamber 1, as shown in FIG. A shutter plate 6 opposed by a holder 4 and attached to a shutter drive unit 5 opens and closes, and a shield 7 having an opening having approximately the same area as the sputtering source is attached to one wall of the vacuum chamber.

[Problem that the invention seeks to solve]

The above-mentioned conventional shield has a drawback in that when a film is formed on a silicon wafer with the shutter plate open, a large amount of sputtered target material comes flying in addition to the silicon wafer ml.

The present invention solves the above-mentioned drawbacks, and when forming a film between the shutter plates,
The present invention provides a shield for a sputtering source from which sputtered target material is directed over an area approximately the same as that of a silicon wafer.

[Means for solving problems]

The shield for a sputter source of the present invention covers a shutter plate that opens and closes between a sputter source attached to a vacuum chamber and a silicon wafer facing the sputter source.
In step i, the shutter plate is attached to a tube having an opening with approximately the same area as the sputtering source on the sputtering source side and an opening with approximately the same area as the silicon wafer on the silicon wafer side. The shutter plate has an opening that allows the shutter plate to move when the vacuum chamber is opened and closed, and a rim that substantially covers the shutter inside the vacuum chamber is attached to the opening outside the cylinder.

〔Example〕

The present invention will now be described with reference to the drawings.

FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

In addition to the conventional configuration described in FIG.
A sputtering source shield 8 is attached to the shield 7, which has an opening approximately the same area as the silicon wafer 3, and a box in which the shutter and the temporary 6 can be moved is attached to a tube M. It is fixed with screws 11. During thin film formation, the shutter plate is housed in the joint of the sputtering source shield, and the sputtered target material from the sputtering source passes through the opening, which is approximately the same as the silicon wafer, and is deposited onto the silicon wafer. A film is formed.

At this time, any target material that has flown to areas other than the silicon wafer is captured within the sputtering source shield, and is prevented from adhering to the outside of the sputtering source shield, that is, the vacuum chamber wall, each pole movement mechanism, etc. .

〔Effect of the invention〕

As explained above, the present invention covers the sputtering source and the moving range of the shutter with a shielding material, and provides an opening in the shielding material with approximately the same area as the silicon wafer, so that the sputtered target material has approximately the same area as the silicon wafer. By making sure that the sputtered target material does not fly to the surface of the silicon wafer except for this shielding material, a large amount of sputtered target material flies to the silicon wafer circle excluding this shielding material, which causes odor.
IIj! This eliminates disadvantages such as a decrease in pumping speed due to film deposition on silicon wafers, a decrease in reliability of handling due to deposition on silicon wafer handling jigs in the vacuum chamber, and contamination within the vacuum chamber due to peeling of the thin film deposited. It has a significant effect.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view showing an example of conventional shield attachment. l...Vacuum chamber, 2...Sputtering source, 3
... Silicon wafer, 4 ... Holder, 5 ... Shutter drive section, 6 ... Shutter plate, 7 ... Shield, 8 ... ...Spatter source shield, 11...Mounting screw.

Claims (1)

[Claims] A shutter plate that moves between a sputtering source installed in a vacuum chamber and a silicon wafer held opposite the sputtering source between an open position that does not interfere with film formation and a closed position that does not interfere with film formation. In the sputtering apparatus, the shutter plate is disposed in a tube having an opening on the sputtering source side having an area approximately the same as that of the sputtering source, and an opening having approximately the same area as the silicon wafer on the silicon wafer side. 1. A shield for a sputtering source, characterized in that an opening allows the shutter plate to move when the shutter plate is opened and closed, and a box that substantially covers the shutter inside the vacuum chamber is attached to the opening outside the cylinder.