JPS63188934A - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPS63188934A JPS63188934A JP62021121A JP2112187A JPS63188934A JP S63188934 A JPS63188934 A JP S63188934A JP 62021121 A JP62021121 A JP 62021121A JP 2112187 A JP2112187 A JP 2112187A JP S63188934 A JPS63188934 A JP S63188934A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- vapor phase
- tube
- gas
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62021121A JPS63188934A (ja) | 1987-01-31 | 1987-01-31 | 気相成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62021121A JPS63188934A (ja) | 1987-01-31 | 1987-01-31 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63188934A true JPS63188934A (ja) | 1988-08-04 |
JPH0573251B2 JPH0573251B2 (enrdf_load_stackoverflow) | 1993-10-14 |
Family
ID=12046048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62021121A Granted JPS63188934A (ja) | 1987-01-31 | 1987-01-31 | 気相成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63188934A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0440529U (enrdf_load_stackoverflow) * | 1990-08-06 | 1992-04-07 |
-
1987
- 1987-01-31 JP JP62021121A patent/JPS63188934A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0440529U (enrdf_load_stackoverflow) * | 1990-08-06 | 1992-04-07 |
Also Published As
Publication number | Publication date |
---|---|
JPH0573251B2 (enrdf_load_stackoverflow) | 1993-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS63188938A (ja) | 窒化ガリウム系化合物半導体の気相成長方法 | |
JPS63227007A (ja) | 気相成長方法 | |
US5036022A (en) | Metal organic vapor phase epitaxial growth of group III-V semiconductor materials | |
JPS63188934A (ja) | 気相成長装置 | |
JP2631286B2 (ja) | 窒化ガリウム系化合物半導体の気相成長方法 | |
CA1313343C (en) | Metal organic vapor phase epitaxial growth of group iii-v semiconductor materials | |
JPS62214616A (ja) | 有機金属気相成長装置 | |
JPS6115150B2 (enrdf_load_stackoverflow) | ||
JPH06151339A (ja) | 半導体結晶成長装置及び半導体結晶成長方法 | |
JP2753832B2 (ja) | 第▲iii▼・v族化合物半導体の気相成長法 | |
JPS63119521A (ja) | 有機金属気相成長装置 | |
JPS63188932A (ja) | 窒化ガリウム系化合物半導体の気相成長方法 | |
JPH04238890A (ja) | 化合物半導体単結晶の作製方法 | |
JPS63188935A (ja) | 窒化ガリウム系化合物半導体の気相成長装置 | |
JPS62247520A (ja) | 気相処理装置 | |
JP2736417B2 (ja) | 半導体素子の製法 | |
JPH0760800B2 (ja) | 化合物半導体の気相成長法 | |
JP2743970B2 (ja) | 化合物半導体の分子線エピタキシャル成長法 | |
JPH01224295A (ja) | ガスソース分子線結晶成長装置 | |
JPH04192323A (ja) | 半導体装置の製造方法 | |
JPS63188937A (ja) | 窒化ガリウム系化合物半導体の気相成長装置 | |
JPH03232221A (ja) | 化合物半導体の気相成長方法 | |
JPS61155291A (ja) | 気相成長方法 | |
JPH0529637B2 (enrdf_load_stackoverflow) | ||
JPS5930799A (ja) | 化合物半導体結晶成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |