JPS63187652A - Heat-resistant resin seal semiconductor device - Google Patents
Heat-resistant resin seal semiconductor deviceInfo
- Publication number
- JPS63187652A JPS63187652A JP1835787A JP1835787A JPS63187652A JP S63187652 A JPS63187652 A JP S63187652A JP 1835787 A JP1835787 A JP 1835787A JP 1835787 A JP1835787 A JP 1835787A JP S63187652 A JPS63187652 A JP S63187652A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- moisture
- aluminum foil
- foil
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 229920006015 heat resistant resin Polymers 0.000 title 1
- 239000011347 resin Substances 0.000 claims abstract description 48
- 229920005989 resin Polymers 0.000 claims abstract description 48
- 239000011888 foil Substances 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005476 soldering Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂で封止される半導体装置に係り。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor device sealed with resin.
特に半田付は実装時の加熱に対して、樹脂クラックを発
生させなくすることに好適な構造に関する。In particular, soldering relates to a structure suitable for preventing resin cracks from occurring due to heating during mounting.
半導体素子を樹脂で封止した構造のパッケージは、樹脂
主成分が有機物であるため、雰囲気中に含まれる水蒸気
を多かれ少なかれ吸湿してしまうが、この吸湿量が多く
なると半田付は等の基板への接続実装時に樹脂にクラン
クが発生することが、知られている。このメカニズムと
しては、沖電気研究開発第128号、Vo 1.52.
No、4゜P 73〜78 (1985) 及び特開昭
60−208847にも述べら九でいる様に、樹脂中に
含まれている水分が、実装時の加熱により水蒸気となり
、樹脂パッケージ内部の水蒸気圧が高くなって、終に樹
脂クラックに至ると考えられている。特にフッ素系不活
性液体の高温蒸気中での半田リフロー (V P S
: Vaper Phase Soldering
)や、赤外線加熱等による半田付けでは樹脂パッケージ
全体が高温状態になるため、クラックが発生し易い。Packages with a structure in which semiconductor elements are sealed with resin have an organic resin as their main component, so they absorb more or less water vapor contained in the atmosphere, but if the amount of moisture absorption increases, it may cause damage to the soldering board, etc. It is known that cranks occur in the resin during connection mounting. This mechanism is described in Oki Electric Research and Development No. 128, Vo 1.52.
As mentioned in No. 4゜P 73-78 (1985) and JP-A-60-208847, the moisture contained in the resin becomes water vapor due to heating during mounting, and the inside of the resin package is heated. It is believed that the water vapor pressure increases, eventually leading to resin cracks. In particular, solder reflow in high-temperature steam of fluorine-based inert liquid (V P S
: Vaper Phase Soldering
) or soldering using infrared heating, etc., the entire resin package is in a high temperature state, so cracks are likely to occur.
この対策としては、樹脂封止半導体の保管における湿度
管理等を行う必要があるが、構造面では前記引用文献に
示された例が公知となっている。即ち、第6図において
、半導体素子1をタブフレーム2に固着し、リードピン
3と上記半導体素子1をワイヤ4によって電気的に接続
した後、樹脂5で封止を行うが、この時、上記樹脂5の
形状として、水蒸気排出孔9を設けて、高温加熱時のパ
ッケージ内部水蒸気圧が高くならない様にするものであ
る。しかし、この構造では水蒸気排出孔8から逆に雰囲
気中水分や汚染物がパッケージ内部に侵入し易く、タブ
フレーム2及び半導体素子1と樹脂5との界面に隙間が
存在すると、金属部の腐食及び半導体素子の電気特性劣
化の危険性が存在する。As a countermeasure against this problem, it is necessary to control humidity during storage of the resin-sealed semiconductor, and the example shown in the cited document is well known in terms of structure. That is, in FIG. 6, after the semiconductor element 1 is fixed to the tab frame 2 and the lead pins 3 and the semiconductor element 1 are electrically connected by the wires 4, sealing is performed with the resin 5. 5 is provided with a water vapor discharge hole 9 to prevent the water vapor pressure inside the package from increasing during high temperature heating. However, with this structure, atmospheric moisture and contaminants are likely to enter the package through the steam exhaust hole 8, and if gaps exist at the interface between the tab frame 2, semiconductor element 1, and resin 5, corrosion of the metal parts may occur. There is a risk of deterioration of the electrical characteristics of the semiconductor element.
上記従来技術は、雰囲気中水分や外部汚染物による内部
金属腐食や電気的特性劣化に対するO性確保が不充分で
あるという問題があった。The above-mentioned conventional technology has a problem in that it is insufficient to ensure O properties against internal metal corrosion and electrical characteristic deterioration due to atmospheric moisture and external contaminants.
本発明の目的は、上記問題が生じる様な構造上の変更を
行わず、樹脂パッケージの吸湿量を低減させて、高温加
熱時に樹脂クラックを発生させないの熱性パッケージを
提供することにある。An object of the present invention is to provide a thermal package that reduces the amount of moisture absorbed by the resin package without making any structural changes that would cause the above-mentioned problems, and that does not cause resin cracks when heated at high temperatures.
上記目的は、樹脂パッケージの上面または下面の一方の
面、あるいは上下両面に水分の透過を防止できる材料か
らなる箔または板を接着した構造とすることにより、達
成される。The above object is achieved by forming a structure in which a foil or plate made of a material capable of preventing moisture from permeating is adhered to one of the upper or lower surfaces of the resin package, or to both the upper and lower surfaces.
樹脂パッケージに接着した箔または板は、雰囲気に直接
接する樹脂表面積、即ち雰囲気中水分が侵入するための
面積を著しく1誠少させ、かつ上記箔または板白身は水
分を透過させないため、樹脂パッケージの吸gB1を大
幅に低減させることができる。The foil or plate bonded to the resin package significantly reduces the surface area of the resin that is in direct contact with the atmosphere, that is, the area for moisture in the atmosphere to penetrate, and since the foil or plate does not allow moisture to pass through, the resin package Inhalation gB1 can be significantly reduced.
また樹脂パッケージ上面に金属光沢を有する箔または板
を接着すれば、赤外線照射による半田リフロ一時に赤外
線を反射して、樹脂パッケージの温度−」1昇を抑制す
ることができる。Furthermore, if a foil or plate with metallic luster is adhered to the upper surface of the resin package, infrared rays can be reflected during solder reflow by infrared irradiation, thereby suppressing an increase in the temperature of the resin package.
以下、本発明の実施例を第1図〜第5図により説明する
。第1図は本発明の一実施例を示す樹脂封止パッケージ
の断面図。第2図は該実施例の効果を示す。第3図〜第
5図は他の実施例を示す断面図である。Embodiments of the present invention will be described below with reference to FIGS. 1 to 5. FIG. 1 is a sectional view of a resin-sealed package showing one embodiment of the present invention. FIG. 2 shows the effect of this embodiment. 3 to 5 are sectional views showing other embodiments.
第1図において、半導体素子1はタブフレーム2に固着
され、リードピン3はワイヤ4によって」1記半導体索
子1と電気的に接続されている。全体はり一1〜ピン3
の外部接続部を除いて樹脂5で封止されている。樹脂5
の上面及び下面にはアルミ箔6が接着剤7により接着さ
れている。第1図に示した構造において、雰囲気中の水
分が樹脂5に侵入する量は、アルミ箔6によって大幅に
低減される。In FIG. 1, a semiconductor element 1 is fixed to a tab frame 2, and lead pins 3 are electrically connected to a semiconductor cable 1 by wires 4. Overall beam 1 ~ pin 3
It is sealed with resin 5 except for the external connection part. resin 5
Aluminum foil 6 is bonded to the upper and lower surfaces of the housing with an adhesive 7. In the structure shown in FIG. 1, the amount of moisture in the atmosphere that enters the resin 5 is significantly reduced by the aluminum foil 6.
第2図は、第1図に示した構造の試料と、比較のため、
アルミ箔を貼付しない試料及び樹脂の下面のみにアルミ
箔を貼付した試料の3種類を吸湿させた後、Vaper
Phase Sol、deringにより加熱し
た実験結果を示している。加湿条件は65℃、95%R
H,1687(放置であるが、吸湿量はアルミ箔を樹脂
パッケージの下面または上下両面に貼付することにより
低減されている。Vaper Pha5e 5o1
derin(Hの条件は、215°C1150秒である
が、クラックはアルミ箔の貼付無しで殆んどの試料で発
生しているのに対し、アルミ箔を樹脂パッケージの少く
とも片面に貼付した試料では発生していない。Figure 2 shows a sample with the structure shown in Figure 1, and for comparison,
After absorbing moisture in three types of samples: a sample without aluminum foil and a sample with aluminum foil attached only to the bottom surface of the resin,
The experimental results obtained by heating by Phase Sol and dering are shown. Humidification conditions are 65℃, 95%R
H, 1687 (Although left unattended, the amount of moisture absorption is reduced by attaching aluminum foil to the bottom surface or both top and bottom surfaces of the resin package. Vaper Pha5e 5o1
The conditions for derin(H) are 215°C and 1150 seconds, but cracks occur in most samples without aluminum foil attached, whereas cracks occur in samples with aluminum foil attached to at least one side of the resin package. It has not occurred.
以上の様に、樹脂パッケージの表面(裏面)にアルミ箔
を貼り付けることにより、樹脂の吸湿量を低く抑えるこ
とができ、従ってVaper PhaseSolde
rir+gの様な高温加熱時の樹脂パッケージ内部での
水蒸気圧上昇を抑えることが出来るので、樹脂クラック
の発生を防止することができる。従って、アルミ箔の貼
付方法としては、第1図、第2回に示した以外に、樹脂
5の上面のみに貼付しても良い。また本実施例ではアル
ミMを用いたが、樹脂が吸湿することを防ぐのがY」的
であるから、他の水分透過を防止する材料を用いること
もできる。従って済または板の厚さも規定する必要はな
い。また樹脂パッケージ上面にアルミ箔の様な金属光沢
を有するものを貼付すると、赤外線による半田付は方法
では、赤外線を反射して、樹脂パッケージの温度上昇を
抑制することができ、吸湿紙低減と合わせて、樹脂クラ
ックに対して二重の効果が得られる。As mentioned above, by pasting aluminum foil on the front (back) of the resin package, the amount of moisture absorbed by the resin can be kept low, and therefore the Vaper Phase Solde
Since it is possible to suppress the rise in water vapor pressure inside the resin package during high temperature heating such as rir+g, it is possible to prevent the occurrence of resin cracks. Therefore, as a method of pasting the aluminum foil, in addition to the method shown in FIG. Furthermore, although aluminum M is used in this embodiment, since the purpose of Y is to prevent the resin from absorbing moisture, other materials that prevent moisture permeation may also be used. Therefore, it is not necessary to specify the thickness of the plate. In addition, if you attach something with a metallic luster, such as aluminum foil, to the top surface of the resin package, it will reflect the infrared rays and suppress the temperature rise of the resin package. Therefore, a double effect on resin cracks can be obtained.
次に第3図に他の実施例を示す。樹脂5の下面に貼付す
るアルミ箔6は、上下両面に接着剤7の層を有し、更に
最下面に例えば紙でできている接着防止層8が貼付され
ている。このパッケージをプリント基板等に接続する際
には、上記接着防止層8のみを除去して、所定の位置に
接着剤7によりパッケージを仮固定できる。Next, FIG. 3 shows another embodiment. The aluminum foil 6 attached to the lower surface of the resin 5 has a layer of adhesive 7 on both upper and lower surfaces, and further has an anti-adhesion layer 8 made of paper, for example, attached to the lowermost surface. When connecting this package to a printed circuit board or the like, only the anti-adhesion layer 8 can be removed and the package can be temporarily fixed in a predetermined position with adhesive 7.
次に第4図にもう一つの他の実施例を示す。樹脂5の表
面に貼付するアルミ箔6の表面に、例えば有機物膜の様
な電気的な絶縁性の高い絶縁物層10を施す。該絶縁物
層10は、プリント基板上の配線や他の部品と上記アル
ミ箔6との電気的接触を防止する効果を有する。Next, FIG. 4 shows another embodiment. An insulator layer 10 having high electrical insulation properties, such as an organic film, is applied to the surface of the aluminum foil 6 to be attached to the surface of the resin 5. The insulating layer 10 has the effect of preventing electrical contact between the aluminum foil 6 and wiring on the printed circuit board or other components.
次に金属以外の、水分透過を防止する材料を用いた実施
例を第5図に示す。樹脂5の表面にはアルマイト箔11
を接着剤7によって貼付する。アルマイト箔11は電気
的絶縁性が高く、本実施例は前記した第4図での実施例
と同様の効果を有する。Next, FIG. 5 shows an example using a material other than metal that prevents moisture permeation. An alumite foil 11 is placed on the surface of the resin 5.
is pasted with adhesive 7. The alumite foil 11 has high electrical insulation, and this embodiment has the same effect as the embodiment shown in FIG. 4 described above.
以上、第1図〜第5図の実施例においては、プリント基
板等に接続する形態として、リードピンを基板の穴に挿
入しない、いわゆる面実装型についてのみ示したが、も
ちろんこれに限定されるものではなく、基板の穴にリー
トピンを挿入して接続する、いわゆる挿入型パッケージ
についても適用できる。In the embodiments shown in FIGS. 1 to 5 above, only the so-called surface mount type, in which lead pins are not inserted into holes in the board, is shown as a form of connection to a printed circuit board, etc., but it is of course limited to this. Instead, the present invention can also be applied to so-called insertion-type packages, which connect by inserting lead pins into holes in the board.
本発明によれば、樹脂封止半導体装置の樹脂内への水分
侵入を低減できる。また赤外線加熱での樹脂の赤外線吸
収量を大幅に低減できる。従って半田付は等の接続実装
時に樹脂に発生するクラックを防止する効果がある。According to the present invention, it is possible to reduce moisture intrusion into the resin of a resin-sealed semiconductor device. Furthermore, the amount of infrared absorption of the resin during infrared heating can be significantly reduced. Therefore, soldering has the effect of preventing cracks that occur in the resin during connection and mounting.
第1図は本発明の一実施例の樹脂封止半導体装置の縦断
面図、第2@は第1図の実施例の効果を示す実験データ
、第3図及び第5図は他の実施例の樹脂封止半導体装置
の縦断面図である。第6図は、従来技術を示す縦断面図
。
1・・・半導体素子、2・・・タブフレーム、3・・・
リードピン、4・・・ワイヤ、5・・・樹脂、6・・・
アルミ箔。
7・接着剤、8・・・接着防止層、9・・・水蒸気排出
孔。
10・・絶縁物層、11・・・アルマイト箔。
第 1 図
葛2 図
% VPS: Vaper’phtbse 5olAe
rrn>!手書1は、承) 2 タフ゛
フし−へ 3 リートげン4ワグヤ
ダ 田I3詐 2 アノムミ箔7 + ’4
f’l 6 ’+47Lt−漕
’? )RQIAqBL第+ 図
70−絶縁物層
第5図
ノ/−一一アルマブト負ゴFIG. 1 is a vertical cross-sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention, FIG. 2 is experimental data showing the effect of the embodiment of FIG. 1, and FIGS. 3 and 5 are other embodiments. FIG. 2 is a longitudinal cross-sectional view of a resin-sealed semiconductor device of FIG. FIG. 6 is a longitudinal cross-sectional view showing the prior art. 1... Semiconductor element, 2... Tab frame, 3...
Lead pin, 4... wire, 5... resin, 6...
aluminum foil. 7. Adhesive, 8.. Adhesion prevention layer, 9.. Water vapor discharge hole. 10... Insulator layer, 11... Alumite foil. Figure 1 Figure 2 Figure % VPS: Vaper'phtbse 5olAe
rrn>! Handwriting 1 is accepted) 2 Tough-up to 3 Reading 4 Waguya
Da ta I3 fraud 2 Anomumi foil 7 + '4
f'l 6'+47Lt-row
'? ) RQIAqBL + Figure 70 - Insulator layer Figure 5 / - 11 Almabut negative
Claims (1)
置において、封止樹脂の外部表面に水分の透過を防止す
る箔または板を接着したことを特徴とする耐熱性樹脂封
止半導体装置。1. A heat-resistant resin-sealed semiconductor device in which a semiconductor element is sealed with resin, characterized in that a foil or plate for preventing moisture permeation is adhered to the outer surface of the sealing resin. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62018357A JPH0750758B2 (en) | 1987-01-30 | 1987-01-30 | Heat-resistant resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62018357A JPH0750758B2 (en) | 1987-01-30 | 1987-01-30 | Heat-resistant resin-sealed semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63187652A true JPS63187652A (en) | 1988-08-03 |
JPH0750758B2 JPH0750758B2 (en) | 1995-05-31 |
Family
ID=11969437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62018357A Expired - Lifetime JPH0750758B2 (en) | 1987-01-30 | 1987-01-30 | Heat-resistant resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0750758B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119167A (en) * | 1988-10-27 | 1990-05-07 | Nec Corp | Resin-sealed semiconductor device |
US5367766A (en) * | 1990-08-01 | 1994-11-29 | Staktek Corporation | Ultra high density integrated circuit packages method |
US5377077A (en) * | 1990-08-01 | 1994-12-27 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
US5420751A (en) * | 1990-08-01 | 1995-05-30 | Staktek Corporation | Ultra high density modular integrated circuit package |
US5446620A (en) * | 1990-08-01 | 1995-08-29 | Staktek Corporation | Ultra high density integrated circuit packages |
US5475920A (en) * | 1990-08-01 | 1995-12-19 | Burns; Carmen D. | Method of assembling ultra high density integrated circuit packages |
US6144108A (en) * | 1996-02-22 | 2000-11-07 | Nitto Denko Corporation | Semiconductor device and method of fabricating the same |
US6144107A (en) * | 1998-03-26 | 2000-11-07 | Nec Corporation | Solid state pickup device excellent in heat-resistance and method of manufacturing the device |
US6326687B1 (en) * | 1998-09-01 | 2001-12-04 | Micron Technology, Inc. | IC package with dual heat spreaders |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196547A (en) * | 1981-05-28 | 1982-12-02 | Nec Corp | Semiconductor device |
-
1987
- 1987-01-30 JP JP62018357A patent/JPH0750758B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196547A (en) * | 1981-05-28 | 1982-12-02 | Nec Corp | Semiconductor device |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119167A (en) * | 1988-10-27 | 1990-05-07 | Nec Corp | Resin-sealed semiconductor device |
US5367766A (en) * | 1990-08-01 | 1994-11-29 | Staktek Corporation | Ultra high density integrated circuit packages method |
US5377077A (en) * | 1990-08-01 | 1994-12-27 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
US5420751A (en) * | 1990-08-01 | 1995-05-30 | Staktek Corporation | Ultra high density modular integrated circuit package |
US5446620A (en) * | 1990-08-01 | 1995-08-29 | Staktek Corporation | Ultra high density integrated circuit packages |
US5475920A (en) * | 1990-08-01 | 1995-12-19 | Burns; Carmen D. | Method of assembling ultra high density integrated circuit packages |
US5543664A (en) * | 1990-08-01 | 1996-08-06 | Staktek Corporation | Ultra high density integrated circuit package |
US5550711A (en) * | 1990-08-01 | 1996-08-27 | Staktek Corporation | Ultra high density integrated circuit packages |
US5566051A (en) * | 1990-08-01 | 1996-10-15 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
US6144108A (en) * | 1996-02-22 | 2000-11-07 | Nitto Denko Corporation | Semiconductor device and method of fabricating the same |
US6144107A (en) * | 1998-03-26 | 2000-11-07 | Nec Corporation | Solid state pickup device excellent in heat-resistance and method of manufacturing the device |
US6326687B1 (en) * | 1998-09-01 | 2001-12-04 | Micron Technology, Inc. | IC package with dual heat spreaders |
US6518098B2 (en) | 1998-09-01 | 2003-02-11 | Micron Technology, Inc. | IC package with dual heat spreaders |
US6765291B2 (en) | 1998-09-01 | 2004-07-20 | Micron Technology, Inc. | IC package with dual heat spreaders |
US6920688B2 (en) | 1998-09-01 | 2005-07-26 | Micron Technology, Inc. | Method for a semiconductor assembly having a semiconductor die with dual heat spreaders |
Also Published As
Publication number | Publication date |
---|---|
JPH0750758B2 (en) | 1995-05-31 |
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