JPH06163812A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To enable a semiconductor element or a part self-contained in a semiconductor device to be replaced with any acceptable ones even after molding the semiconductor device by a method wherein the semiconductor device packaged and covered with molding member is to be structured so as to expose a part of the surface of the substrate. CONSTITUTION:Within a semiconductor element 2, bonding pads formed on the surface of the semiconductor element 2 are connected to wiring patterns 5 formed on a substrate 3. The wiring patterns are formed in the aperture part of a substrate holding member on the opposite surface to the semiconductor element 2 packaging surface of the substrate 3 while a semiconductor package 11 is connected to the opposite surface by junction method such as soldering, conductive bonding agent, anisotropical conductive film, etc. In such a constitution, if a semiconductor package especially in high fraction defective is selected, the semiconductor package is externally exposed until the final step so that the semiconductor package may be replaced with an acceptable one whenever any defectives are detected in the inspecting step.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly to high density and high reliability thereof.

[0002]

2. Description of the Related Art A conventional semiconductor device is disclosed in Japanese Patent Laid-Open No.
There has been known a structure in which a semiconductor element or a component is mounted on a substrate and then the entire semiconductor device is molded as disclosed in Japanese Patent Publication No. 244747.

[0003]

However, according to the conventional semiconductor device and the method for manufacturing the semiconductor device, a defect of a semiconductor element or a component incorporated in the semiconductor device is found only after the semiconductor device is molded. However, there is a problem that defective parts cannot be replaced.

Further, in the conventional semiconductor device and the method for manufacturing the semiconductor device, when the area of the substrate becomes large, the mold material covering the semiconductor device does not have vertical conduction. Therefore, there is a problem in that a leak mode defect due to the invasion of water vapor and a package crack during reflow mounting are likely to occur.

Further, in the conventional semiconductor device and the method for manufacturing a semiconductor device, when a leaded component such as a semiconductor package is mounted, the interface between the substrate and the component is narrow and the mold material is unlikely to enter. However, there is a problem in that air bubbles remain and water vapor easily invades into the air bubbles, causing defects such as leak mode defects and package cracks during reflow mounting.

Furthermore, since the conventional semiconductor device and the method of manufacturing a semiconductor device have a structure in which the molding material directly contacts the wiring pattern having poor adhesion with the molding material, the reliability test is performed when the area of the wiring pattern becomes large. Therefore, there is a problem that peeling occurs at the interface between the wiring pattern and the molding material, and a defect such as a leak mode defect due to invasion of water vapor and a package crack during reflow mounting is likely to occur.

Therefore, an object of the present invention is to provide a semiconductor device having a structure in which a semiconductor element or a part built in the semiconductor device can be replaced even after the semiconductor device is molded, and a method for manufacturing the semiconductor device. It is to be realized.

Further, even if the area of the substrate becomes large, peeling does not easily occur at the interface between the substrate surface and the molding material, and even when a leaded component such as a semiconductor package is mounted, bubbles are not formed at the interface between the substrate and the component. Does not remain, and even if the area of the wiring pattern that does not adhere well to the mold material becomes large, peeling does not occur easily at the interface between the wiring pattern and the molding material, and leak mode failure due to water vapor intrusion, reflow mounting It is intended to realize a semiconductor device having a structure in which defects such as package cracks do not occur and a method for manufacturing a semiconductor device.

[0009]

In order to solve the above problems, in a semiconductor device of the present invention, a substrate, a semiconductor element mounted on the substrate, and an electrical connection between the semiconductor element formed on the substrate and the semiconductor element are provided. In a semiconductor device in which a wiring pattern connected to, a part of the substrate, the semiconductor element, and the wiring pattern is covered with a first resin, the first resin covers a part of the substrate, Means are provided for exposing at least a portion of the surface of the substrate.

There is provided a lead frame placed on the side of the substrate and electrically connected to the wiring pattern, and means for covering at least a part of the lead frame with a first resin is taken.

The first resin has means for completely covering one surface of the substrate and partially covering the other surface.

The first resin takes a means for covering a part of the substrate along the four sides of the substrate.

A means for mounting the semiconductor element or the semiconductor encapsulant on the surface of the substrate not covered with the first resin and further covering with the second resin is adopted.

The first resin is a transfer mold and the second resin is a potting mold.

The first resin or the second resin takes a means containing a substance having a higher thermal conductivity than the first resin or the second resin.

A means for attaching a heat dissipation member is provided on the first resin or the second resin.

Means is provided for fixing the heat dissipation member directly mounted on the semiconductor encapsulant to the semiconductor device by the first resin or the second resin.

In order to solve the above problems, in the method of manufacturing a semiconductor device of the present invention, a step of mounting a semiconductor element on a substrate, a wiring pattern formed on the substrate, and the semiconductor element are electrically connected. In a method of manufacturing a semiconductor device, which comprises a step of connecting and a step of covering a part of the substrate, the semiconductor element, and the wiring pattern with a first resin, in an exposed portion on the substrate which is not covered with the first resin. A means having a step of mounting a semiconductor element different from the semiconductor element is taken.

After the step of mounting a semiconductor element different from the semiconductor element on the exposed portion on the substrate which is not covered with the first resin, the step of covering the exposed portion on the substrate with the second resin is performed. Take the means to have.

In order to solve the above problems, in the semiconductor device of the present invention, the substrate, the semiconductor element mounted on the first surface of the substrate, and the semiconductor element formed on the substrate and electrically connected to the semiconductor element. In a semiconductor device in which a connected wiring pattern, at least a part of the semiconductor element and the wiring pattern, and both surfaces of the substrate are covered with resin,
The substrate is provided with a through hole, and means for allowing the resin to exist also in the through hole of the substrate is taken.

A means for covering the lead frame placed on the side of the substrate and electrically connected to the wiring pattern and at least a part of the lead frame with a resin is taken.

A semiconductor encapsulant or an electric component mounted on the second surface of the substrate is present on the through hole, and the resin is used for the semiconductor encapsulant or the electric component substrate. Means are placed between the mounting surface and the substrate.

Means is provided for making the through hole the through hole of the substrate.

In order to solve the above problems, in the semiconductor device of the present invention, the substrate, the semiconductor element mounted on the first surface of the substrate, and the semiconductor element formed on the substrate and electrically connected to the semiconductor element. In a semiconductor device in which a connected wiring pattern, at least a part of the semiconductor element and the wiring pattern, and both surfaces of the substrate are covered with resin, an opening is formed in the wiring pattern of the substrate, Means is provided for bringing the resin into contact with the substrate through the opening.

A lead frame placed on the side of the substrate and electrically connected to the wiring pattern and a means for covering at least a part of the lead frame with resin are taken.

Means for forming the opening in a mesh shape on the wiring pattern is taken.

In order to solve the above problems, in the method of manufacturing a semiconductor device of the present invention, a step of mounting a semiconductor element on a substrate having a through hole, and a wiring pattern formed on the substrate are provided. In a method of manufacturing a semiconductor device having a step of electrically connecting the semiconductor element and a step of covering a part of the substrate, the semiconductor element and the wiring pattern with a resin, the substrate and the through hole are made of the resin. Take a means including a step of simultaneously covering.

Means is provided which has a step of simultaneously covering the substrate and the through hole with the resin by transfer molding.

[0029]

In the present invention, since the semiconductor element is mounted and a part of the substrate surface of the semiconductor device covered with the molding material is exposed, the semiconductor element and parts can be mounted on the exposed portion. Since the semiconductor element or component mounted on the exposed portion is outside the molding material, the semiconductor element or component incorporated in the semiconductor device can be replaced even after the semiconductor device is molded.

Further, in the present invention, a semiconductor element is mounted,
Since the through hole was made in the substrate of the semiconductor device covered with the molding material, the vertical conduction of the molding material through the through hole occurs in the substrate, so that even if the area of the substrate increases, the peeling at the interface between the substrate surface and the molding material Is less likely to occur, and in the present invention, a plastic package,
Since the tape carrier package or the electric component is present, the molding material wraps around the gap between the substrate and the electric component through the through hole, and no bubbles remain at the interface between the substrate and the component. Since the opening is formed in the wiring pattern on the board and the opening allows the molding material to come into direct contact with the board, good adhesion is achieved even if the area of the wiring pattern where the adhesion to the molding material is poor becomes large. Since the contact area between the substrate and the molding material can be increased, peeling at the interface between the wiring pattern and the molding material is less likely to occur, and the water vapor entering the peeling portion and the bubble generating portion prevents the peeling from occurring inside the semiconductor device. Since the ionization of the existing impurities is not promoted, the leak mode failure is less likely to occur, and the reflow mounting due to the thermal expansion of the invading water vapor. An effect that defects such as generation of package crack is not generated.

[0031]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional structural view of a semiconductor device of the present invention. In FIG. 1, 2 is a semiconductor element, and 1
The bonding pad formed on the surface of the semiconductor element and the wiring pattern 5 formed on the substrate 3 are connected by this wire. The board is a lead frame 6
It is mounted on the substrate holding member 7 formed of the same member as above by means such as bonding or brazing, and the wiring pattern and the lead frame are connected by wires. The substrate holding member may be integrally formed of the same member as the lead frame, and is usually a TAB for mounting a semiconductor element.
You may use a hanging part. 4 as a lead frame
Two alloys have been often used, but copper has also come to be used in response to the recent high heat generation of semiconductor elements.
As shown in the figure, a plurality of semiconductor elements are often mounted on the surface on which the semiconductor elements are mounted. Gold or aluminum is often used for the wire. As the substrate, an epoxy resin such as ceramics or FR-4, a polyimide resin, an aramid resin, or silicon is often used. A copper foil, a conductive paste, a metal thin film, or the like is often used as the wiring pattern. In recent years, the operating speed of semiconductor devices has continued to rise, and power consumption has risen in proportion to it, so this measure of heat dissipation is very important, but the substrate also has good thermal conductivity, such as ceramics and silicon. In the case of an organic substrate, a metal such as a tungsten-based material, which has good thermal conductivity only in the die attach portion of the semiconductor element, is often used, or the thermal conductivity is increased through the metal in the substrate inner layer. The semiconductor element, wires, bonding pads, substrate, part of the wiring pattern, and one side of the substrate shown in the figure are molded resin 4
It is covered by, and high electrical insulation is obtained,
In addition, it has a structure that protects the semiconductor element from the humidity environment. The mold resin is often epoxy, silicone, or polyimide, and may be integrally molded by transfer molding as shown in the figure, or only the important parts may be molded by potting mold, and then molded integrally by transfer molding. You may. A wiring pattern is also formed in the opening of the substrate holding member on the surface of the substrate opposite to the semiconductor element mounting surface, and the semiconductor package 11 is soldered there, conductive adhesive, anisotropic conductive They are connected by a joining method such as a film. If a semiconductor package with a high defect rate is mainly mounted as a semiconductor package, the semiconductor package will be exposed to the outside of the semiconductor device until the final process.Therefore, replace the semiconductor package when a defect is detected in the inspection process. can do. Of course, a plurality of semiconductor packages may be mounted. The semiconductor package may be a tape carrier package or flip chip. Further, a plurality of them may be stacked and mounted to increase the mounting density, or may be stacked on the semiconductor element 2. By adopting such a structure, it is possible to obtain a semiconductor device structure in which the semiconductor element mounting surface of the substrate is entirely covered with a highly reliable resin and the semiconductor package on the opposite surface can be easily replaced. Furthermore, after mounting the semiconductor package on the back surface of the substrate, the back surface of the substrate may be further molded by transfer molding or potting mold. Then, the reliability of the semiconductor device is further improved. Further, as shown in the figure, the substrate is placed on the substrate holding member, and the wiring pattern and the lead frame are not connected by wires,
The wiring pattern and the lead frame may be directly joined electrically or mechanically. As a means for joining the board to the lead frame, the wiring pattern on the board is gold-plated, and the portion to be joined with the wiring pattern on the lead frame is gold-plated, silver-plated, tin-plated, or solder-plated in advance. After aligning each other, apply heat and pressure to join them. The wiring pattern side is not limited to gold plating,
Plating such as silver plating, tin plating, and solder plating may be performed in advance, or gold may be applied to the wire bonding area to change the type of the bonding portion and the plating. At the time of joining by applying heat and pressure, ultrasonic waves may be used, or joining may be performed by single point bonding.

Although the structure including the lead frame in the semiconductor device has been described above, the structure including no lead frame is exactly the same except that there is no lead frame from the structure described above. The signal can be extracted from the wiring pattern by molding so that the wiring pattern is exposed, and then wire bonding, soldering, or the like.

Next, a method of manufacturing the semiconductor device described above will be described. First, the substrate 3 is die-attached to the substrate holding member 7, the semiconductor element 2 is die-attached to the substrate, and the semiconductor element and the wiring pattern 5, and the finger of the lead frame 6 and the wiring pattern 5 are wire-bonded. At this time, the entire bonding area of the semiconductor element is
By firmly adhering the substrate to the jig, it is possible to fully receive the capillary during bonding and wire bond. Next, in this state, the lead frame and the board are electrically connected by the wire between the finger and the wiring pattern and mechanically by the die attachment with the board holding member integrated with the lead frame. The entire semiconductor device can be easily handled by handling the. In this state, the semiconductor device is sandwiched by a mold having a mold space only on one side of the substrate, and the molding material 4 is formed in a mold shape as shown in FIG. 1 by transfer molding. This type is a normal QF
It differs from a mold used for molding a semiconductor device such as P in that it does not cover the entire surface of the semiconductor device. Of course, if the reliability level required for semiconductor devices is low,
It may be a step of molding with potting mold. Next, the semiconductor package 11 is mounted on the back surface of the substrate,
Finally, the process of trimming, plating and forming the lead frame is performed, and the final product is inspected. Since the semiconductor package is exposed on the back surface of the substrate until the final product, it is easy to replace the semiconductor package. After mounting the semiconductor package on the back surface of the substrate, a step of further molding the back surface of the substrate by transfer molding or potting mold may be added. of course,
The semiconductor package may be mounted on the back surface of the substrate after the inspection. Then, it is not necessary to mount the semiconductor package on the defective semiconductor device.

Next, another embodiment of the present invention will be described with reference to FIG. FIG. 2 is a sectional structural view of the semiconductor device of the present invention. In the embodiment of FIG. 2, except that the semiconductor element 2 of the substrate 3 is covered with the molding material and at the same time, the molding material is formed in a dam shape along the four sides of the substrate on the surface opposite to the mounting surface of the semiconductor element. The same structure and manufacturing method as described with reference to FIG. At the time of transfer molding, the semiconductor device is sandwiched by a mold having a mold space in a dam shape along one side of the substrate and the four sides of the back surface of the substrate, and the molding material 4 is formed in the mold shape as shown in FIG. 2 by transfer molding. Forming the mold material in a dam shape along the four sides of the substrate is such that when the mold material is present only on one side of the substrate as shown in FIG. 1, the substrate is an organic FR-4.
This is to prevent the reliability of the semiconductor device from lowering due to thermal stress caused by the warp of the substrate due to the bimetal effect due to the difference in thermal expansion coefficient between the molding material and the substrate in the case of a soft substance such as. That is, since the mold material existing in a dam shape along the four sides of the substrate is like a rib as a structural material, the warp of the substrate can be minimized. The substrate is exposed at the openings between the molding materials that are present in a dam shape along the four sides of the substrate, and the semiconductor package 11 can be mounted thereon in the same manner as described above. Reference numeral 12 denotes a potting mold material. By adopting such a structure, the connection portion of the semiconductor package is shielded from the external environment, so that the reliability is improved as compared with the case where the potting mold material is not covered. You can Of course, when the heat generation of the semiconductor package becomes a problem, a filler having high thermal conductivity may be mixed in the potting mold material.

Further, in the case where the heat radiation property higher than that shown in FIG. 2 is required, as shown in FIG. 3, in the openings between the mold materials existing in a dam shape along the four sides of the substrate in FIG. If a metal such as iron, aluminum, or copper, a plate formed of ceramics such as boron nitride or alumina having excellent heat dissipation, or a heat dissipation member 13 such as a heat dissipation fin is attached with a potting mold material 12, the semiconductor The heat dissipation from the package is even better. Further, if the potting mold material is present only between the semiconductor package and the opening between the mold materials existing in a dam shape along the substrate 4, and the heat dissipation member and the semiconductor package are brought into direct contact, a more semiconductor Good heat dissipation from the package.

FIG. 4 is a sectional structural view of a semiconductor device of the present invention showing still another embodiment. In FIG. 4, reference numeral 2 denotes a semiconductor element, and the wire 1 connects the bonding pad formed on the surface of the semiconductor element and the wiring pattern 5 formed on the substrate 3. The substrate is placed on the substrate holding member 7 formed of the same member as the lead frame 6 by means such as adhesion and brazing, and the wiring pattern and the lead frame are connected by wires. Reference numeral 20 denotes a through hole formed in the substrate. The through hole may be formed by a drill, a mold, a laser or the like at the time of manufacturing the substrate, and may serve as a reference hole of the substrate or a through hole.

The molding material 4 also exists in this through hole,
The mold material in the through hole establishes electrical continuity between the mold material existing on the front side and the back side of the substrate. Of course, there may be a plurality of through holes. Therefore, even if the area of the substrate becomes large or a substrate made of polyimide or the like having poor adhesion to the molding material is used, peeling at the interface between the substrate surface and the molding material is less likely to occur. Needless to say, the through-hole structure formed in the substrate is effective for all the structures described in this embodiment.

In order to obtain the structure of FIG. 4, in the method of manufacturing a semiconductor device according to the present invention, first, the substrate 3 is die-attached to the substrate holding member 7, the semiconductor element 2 is die-attached to the substrate, and the semiconductor element and wiring are connected. The pattern 5 and the fingers of the lead frame 6 and the wiring pattern 5 are wire-bonded. At this time, by firmly adsorbing the substrate to the jig over the entire bonding region of the semiconductor element, the capillary can be firmly received during wire bonding and wire bonding can be performed. Next, in this state, the lead frame and the board are electrically connected by the wire between the finger and the wiring pattern, and are mechanically connected by the die attachment with the board holding member integrated with the lead frame.
By handling the lead frame, the entire semiconductor device can be easily handled. In this state, the semiconductor device is sandwiched by a mold having a standard outer shape determined by standards such as EIAJ, and the molding material 4 is formed by transfer molding into a mold shape as shown in FIG. This mold is often the same as the mold used for molding a semiconductor device such as a normal QFP.
At this time, since the viscosity of the molding material before hardening is extremely low, the semiconductor material is covered, and at the same time, it penetrates into the through hole. Depending on the material, vertical conduction is achieved, even if the adhesion between the substrate and the molding material is somewhat poor,
The molding material continues to sandwich the substrate. Of course, if the reliability level required for the semiconductor device is low, a potting mold may be used. Next, the semiconductor package 11 is mounted on the back surface of the substrate, and finally, a lead frame is trimmed, plated, and formed, and the final product is inspected.

FIG. 5 is a sectional structural view of a semiconductor device of the present invention showing still another embodiment. In FIG. 4, reference numeral 2 denotes a semiconductor element, and the wire 1 connects the bonding pad formed on the surface of the semiconductor element and the wiring pattern 5 formed on the substrate 3. The substrate is placed on the substrate holding member 7 formed of the same member as the lead frame 6 by means such as adhesion and brazing, and the wiring pattern and the lead frame are connected by wires. Reference numeral 20 denotes a through hole opened in the substrate, and the semiconductor package 11 is mounted on the substrate on the through hole by the method described in FIG. Normally, the gap between the substrate and the semiconductor package is very small, and when there is no through hole, when the semiconductor device is covered with the molding material of 4, the unfilled portion is likely to remain in the gap between the substrate and the semiconductor package. However, according to the present invention, when the semiconductor device is covered with the molding material, the molding material flows into the gap between the substrate and the semiconductor package even from the through hole, so that there is no unfilled portion in the gap between the substrate and the semiconductor package. Of course, it goes without saying that the through hole structure formed in the substrate under the semiconductor package is effective for the structure in which the semiconductor packages are present on the back surfaces of all the substrates described in this embodiment. The method of manufacturing the structure shown in FIG.
It is the same as described in FIG.

FIG. 6 is a partial front view of a semiconductor device in the process of being manufactured, showing still another embodiment of the present invention. In FIG. 6, reference numeral 2 denotes a semiconductor element, and the wire 1 connects the bonding pad formed on the surface of the semiconductor element and the wiring pattern 5 formed on the substrate 3. The board may also be mounted on a lead frame. After the structure shown in FIG. 6 is formed, the semiconductor device is covered with the molding material as described above. Reference numeral 21 denotes an opening in the pattern. The opening is formed in the wiring pattern, and the substrate surface is exposed at the inside of the opening. The openings in the pattern are often formed at the same time when the wiring pattern is formed during the substrate manufacturing process. Generally, the substrate surface has good adhesion to the molding material, and the wiring pattern has poor adhesion to the molding material. You can Usually, a pattern having a large solid area is often formed when the impedance is lowered like a ground pattern or a power source pattern to improve the noise resistance of a semiconductor device. However, as in the present invention, 22 meshes are formed. If the opening in the pattern is formed like the forming portion, the adhesion with the molding material is improved over the entire surface of the substrate, which is more advantageous in terms of reliability.

Other components such as a chip resistor, a chip capacitor, and a chip inductance are often mounted on the substrate of the semiconductor device described above.

[0042]

As described above, according to the semiconductor device and the method for manufacturing the semiconductor device of the present invention, the semiconductor element is mounted and a part of the substrate surface of the semiconductor device covered with the molding material is exposed. Therefore, even after the semiconductor device is molded, the semiconductor element or component built in the semiconductor device can be replaced. Therefore, even if the semiconductor element or component is defective, an expensive semiconductor with added value is added. Since it is not necessary to dispose of the entire device, it is possible to significantly reduce the cost of the semiconductor device.

Further, in the semiconductor device and the method of manufacturing the semiconductor device of the present invention, since the semiconductor element is mounted and the through hole is opened in the substrate of the semiconductor device covered with the molding material,
Even if the area of the substrate becomes large, peeling does not easily occur at the interface between the substrate surface and the molding material, and in the semiconductor device and the manufacturing method of the semiconductor device of the present invention, the semiconductor element is mounted and covered with the molding material. Since the plastic package, the tape carrier package, or the electric component is present on the through hole of the substrate of the semiconductor device, no bubbles remain at the interface between the substrate and the component, and the semiconductor device and the semiconductor device of the present invention are also present. In the manufacturing method of (1), the semiconductor element is mounted, the opening is formed in the wiring pattern on the substrate of the semiconductor device covered with the molding material, and the molding material is brought into direct contact with the substrate through the opening. Even if the area of the wiring pattern with poor adhesion to the material becomes large, peeling at the interface of the wiring pattern and the molding material is less likely to occur, and in the end, Invasion of water vapor into the separation part and bubble generation part does not promote ionization of impurities contained in the semiconductor device, so that leak mode failure is less likely to occur. Since there is no occurrence of defects such as the occurrence of package cracks, there is an excellent effect that a highly reliable semiconductor device can be easily obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 3 is a sectional view of a semiconductor device of the present invention.

FIG. 4 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 5 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 6 is a partial front view of the semiconductor device in the process of being manufactured according to the present invention.

[Explanation of symbols]

 1 Wire 2 Semiconductor Element 3 Substrate 4 Molding Material 5 Wiring Pattern 6 Lead Frame 7 Board Fixing Member 11 Semiconductor Package 12 Potting Molding Material 13 Heat Dissipating Member 20 Through Hole 21 Opening in Pattern 22 Mesh Forming Part

Claims (20)

[Claims] 1. A substrate, a semiconductor element mounted on the substrate, a wiring pattern formed on the substrate and electrically connected to the semiconductor element, the substrate, the semiconductor element, and the wiring pattern. In the semiconductor device in which a part of the substrate is covered with a first resin, the first resin covers a part of the substrate, and at least a part of the surface of the substrate is exposed. . 2. A lead frame mounted on the side of the substrate and electrically connected to the wiring pattern, wherein at least a part of the lead frame is covered with a first resin. The semiconductor device according to claim 1. 3. The first resin completely covers one surface of the substrate and partially covers the other surface, and at least a part of the surface of the substrate is exposed.
Alternatively, the semiconductor device according to claim 2. 4. The semiconductor device according to claim 3, wherein the first resin covers a part of the substrate along four sides of the substrate. 5. The semiconductor according to claim 3, wherein the semiconductor element or the semiconductor encapsulant is placed on the surface of the substrate which is not covered with the first resin, and is covered with the second resin. apparatus. 6. The semiconductor device according to claim 5, wherein the first resin is covered with a transfer mold and the second resin is covered with a potting mold. 7. The semiconductor device according to claim 5, wherein the first resin or the second resin contains a substance having higher thermal conductivity than the first resin or the second resin. . 8. On the first resin or the second resin,
The semiconductor device according to claim 5, wherein a heat dissipation member is attached. 9. The semiconductor device according to claim 5, wherein the heat dissipation member directly mounted on the semiconductor encapsulant is fixed to the semiconductor device by the first resin or the second resin. apparatus. 10. A step of mounting a semiconductor element on a substrate, a step of electrically connecting a wiring pattern formed on the substrate to the semiconductor element, a step of mounting the substrate, the semiconductor element and the wiring pattern. A method of manufacturing a semiconductor device having a step of covering a part of the semiconductor element with a first resin, the method including mounting a semiconductor element different from the semiconductor element on an exposed portion of the substrate which is not covered with the first resin. A method of manufacturing a semiconductor device, comprising: 11. The exposed portion on the substrate is covered with a second resin after the step of mounting a semiconductor element different from the semiconductor element on the exposed portion on the substrate which is not covered with the first resin. The method for manufacturing a semiconductor device according to claim 10, further comprising steps. 12. A substrate, a semiconductor element mounted on the first surface of the substrate, a wiring pattern formed on the substrate and electrically connected to the semiconductor element, the semiconductor element and the wiring. In a semiconductor device in which at least a part of a pattern and both surfaces of the substrate are covered with a resin,
A semiconductor device, wherein the substrate is provided with a through hole, and the resin is also present in the through hole of the substrate. 13. The lead frame placed on the side of the substrate and electrically connected to the wiring pattern, and at least a part of the lead frame is covered with a resin. The semiconductor device described. 14. A semiconductor encapsulant or an electric component mounted on the second surface of the substrate is present on the through hole, and the resin is the semiconductor encapsulant or the electric component. 14. The semiconductor device according to claim 12, which is present between the substrate mounting surface of the substrate and the substrate. 15. The method according to claim 12, wherein the through hole is a through hole of the substrate.
Alternatively, the semiconductor device according to claim 14. 16. A substrate, a semiconductor element mounted on a first surface of the substrate, a wiring pattern formed on the substrate and electrically connected to the semiconductor element, the semiconductor element and the wiring. In a semiconductor device in which at least a part of a pattern and both surfaces of the substrate are covered with a resin,
An opening is formed in the wiring pattern of the substrate, and the resin is in contact with the substrate through the opening. 17. The lead frame placed on the side of the substrate and electrically connected to the wiring pattern, and at least a part of the lead frame are covered with resin. The semiconductor device described. 18. The opening is formed in a mesh shape on the wiring pattern.
Alternatively, the semiconductor device according to claim 17. 19. A step of placing a semiconductor element on a substrate having a through hole, a step of electrically connecting a wiring pattern formed on the substrate to the semiconductor element, and the substrate. A method of manufacturing a semiconductor device, comprising a step of covering a part of the semiconductor element and the wiring pattern with a resin, the method comprising the step of simultaneously covering the substrate and the through hole with the resin. . 20. The method of manufacturing a semiconductor device according to claim 19, further comprising the step of simultaneously covering the substrate and the through hole with the resin by transfer molding.