JPS60226145A - Mounting process of semiconductor device - Google Patents
Mounting process of semiconductor deviceInfo
- Publication number
- JPS60226145A JPS60226145A JP59081864A JP8186484A JPS60226145A JP S60226145 A JPS60226145 A JP S60226145A JP 59081864 A JP59081864 A JP 59081864A JP 8186484 A JP8186484 A JP 8186484A JP S60226145 A JPS60226145 A JP S60226145A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- mounting
- package
- brazing material
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、樹脂封止型半導体装置の実装方法に関し、該
半導体装置を実装して形成される電子機器の信頼性向上
に適用して有効な技術に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for mounting a resin-sealed semiconductor device, and relates to a technique that is effective when applied to improve the reliability of electronic equipment formed by mounting the semiconductor device. It is something.
半導体装置を実装する方法としては、該装置の外部端子
を基板上の電極部に半田等のろう材で固定することが行
なわれている。A method for mounting a semiconductor device is to fix the external terminal of the device to an electrode portion on a substrate using a brazing material such as solder.
その際、ろう材を溶融する方法として、温風または赤外
線照射等を利用し、半導体装置全体をろう材の融点以上
に加熱するやり方がある。At this time, as a method of melting the brazing material, there is a method of heating the entire semiconductor device to a temperature higher than the melting point of the brazing material using hot air or infrared irradiation.
ところで、半導体装置のうち樹脂封止型半導体装置は、
その構成材料の物性の相違からもともとパッケージクラ
ンク、たとえば樹脂部分に亀裂が発生したり、樹脂とリ
ードの界面に間隙が生じたりし易いという性質を有して
おり、製品完成後においても該クラックから水分等の腐
食物質がパッケージ内部へ侵入していき電気系統部を腐
食することにより、結果として導通不良等が生じ易いと
いう問題があると考えられるものである。By the way, among semiconductor devices, resin-sealed semiconductor devices are
Due to differences in the physical properties of the constituent materials, package cranks, for example, tend to crack in the resin part or create gaps at the interface between the resin and the leads. This is considered to be a problem in that corrosive substances such as moisture enter the inside of the package and corrode the electrical system, resulting in poor continuity.
したがって、前記半導体装置の信頼性向上のためには、
極力前記パッケージクラックの発生を防止する必要があ
る。Therefore, in order to improve the reliability of the semiconductor device,
It is necessary to prevent the occurrence of package cracks as much as possible.
ところが、半導体装置を樹脂モールドしてパッケージン
グを行なった後においても、熱的影響を被る種々の工程
があり、これら工程も前記パッケージクラック発生の大
きな原因になっている。However, even after the semiconductor device is resin-molded and packaged, there are various steps that are affected by heat, and these steps are also a major cause of the occurrence of package cracks.
なかでも樹脂モールド後のパッケージのエイジング工程
や最前の半導体装置のろう付実装工程等が非雷に高温度
忙装置全体をさらすことになるため、最もパッケージク
ラックが発生し易い工程であると考えられる。Among these, the aging process of the package after resin molding and the brazing mounting process of the semiconductor device at the forefront are considered to be the processes most likely to cause package cracks, as they expose the entire high temperature busy device to non-lightning. .
そして、半導体装置全体を、たとえば赤外線照射により
加熱してろう材を溶融し実装する場合は、通常、パッケ
ージを構成している樹脂が黒色であるためパッケージ部
がリード部よりかなり高温に熱せられていることが本発
明者により明らかにされた。それ故、半導体装置を構成
する材料の熱膨張率等の物性差に起因する熱衝撃による
パッケージクラック発生が、前記実装方法を採用する場
合に特に重要な問題となることが本発明者により見い出
された。When mounting the entire semiconductor device by heating it with infrared rays to melt the brazing material, the package part is usually heated to a much higher temperature than the lead parts because the resin that makes up the package is black. The present inventor has clarified that there is a Therefore, the inventors have found that the occurrence of package cracks due to thermal shock caused by differences in physical properties such as thermal expansion coefficients of materials constituting a semiconductor device becomes a particularly important problem when the above-mentioned mounting method is adopted. Ta.
さらに、前記のごとく半導体装置全体が高温度にさらさ
れる実装工程等においては、単に構成材料の熱膨張率等
の物性の相違だけでなく、パッケージ内に取り込まれて
いる微量の水分等の低沸点物質が気化し、さらに該物質
の蒸気が熱膨張することによる、いわば気化に伴なう体
積衝撃が前記パンケージクランクの発生の大きな原因に
なっている事実をも本発明者が見い出した。Furthermore, in the mounting process where the entire semiconductor device is exposed to high temperatures as mentioned above, not only differences in physical properties such as the coefficient of thermal expansion of the constituent materials but also the low boiling point of trace amounts of moisture incorporated into the package. The present inventor has also discovered that the so-called volumetric impact accompanying vaporization, which is caused by vaporization of a substance and further thermal expansion of the vapor of the substance, is a major cause of the occurrence of the pancage crank.
そして、前記のパッケージ内に存在する水分等の低沸点
物質は、モールド後のパッケージであってもエイジング
前であればある程度存在している場合もあり、エイジン
グ後においても、外部リードをめっき処理する場合には
直接水と接触することになるため、水が樹脂部を直接浸
透して行ったり、長時間空気中に放置する場合は、空気
中の水分が徐々にパッケージ内罠浸透していったりもす
るものである。それは、樹脂には完全な気密性がないこ
とが原因である。The low boiling point substances such as moisture that exist in the package may still exist to some extent even in the package after molding before aging, and even after aging, the external leads must be plated. If the product comes into direct contact with water, the water may directly penetrate the resin part, or if it is left in the air for a long time, the moisture in the air may gradually seep into the package. It is also something to do. This is because resin is not completely airtight.
以上事実より、前記実装工程におけるパッケージクラッ
ク発生の問題は、樹脂封止型半導体装置の中でも水分が
浸透し易（、かつ樹脂強度が低くなる薄型パッケージ、
小型パッケージ、さらには小型薄型パッケージからなる
半導体装置において特に重大であることが本発明者によ
り見い出された。From the above facts, the problem of package cracking in the mounting process is that even in resin-sealed semiconductor devices, moisture can easily penetrate (thin packages with low resin strength),
The inventors have discovered that this problem is particularly important in semiconductor devices made of small packages, and even small and thin packages.
本発明の目的は、樹脂封止型半導体装置の実装ｆｃ関し
、該半導体装置を実装してなる電子機器の＠粗性向上に
適用して有効な技術を提供するものである。An object of the present invention is to provide a technology effective for improving the roughness of electronic equipment mounted with the semiconductor device, regarding the mounting fc of a resin-sealed semiconductor device.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らか罠なるであろう
。The above and other objects and novel features of the present invention will be apparent from the description herein and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、ろう材を介して実装してなる樹脂封止型半導
体装置の実装を、ろう材の融点より低い温度の予備乾燥
工程で予めパッケージ樹脂に含まれている水分等の低沸
点物質を除去せしめた後、半導体装置全体をろう材融点
以上に加熱するろう材溶融工程を経て実装することによ
り、該溶融工程においてパッケージが高温度に加熱され
る場合であっても、低沸点物質の気化が原因となるパン
ケージクラックの発生を防止することができることより
、前記目的を達成するものである。In other words, when a resin-sealed semiconductor device is mounted via a brazing material, low-boiling substances such as water contained in the package resin are removed in advance through a pre-drying process at a temperature lower than the melting point of the brazing material. Then, by mounting the entire semiconductor device through a brazing material melting process in which the entire semiconductor device is heated above the melting point of the brazing material, even if the package is heated to a high temperature in the melting process, the vaporization of low boiling point substances can be avoided. The above object is achieved by being able to prevent the occurrence of pan cage cracks.
また、ろう材の溶融工程における加熱手段として電磁波
照射を採用し樹脂封止型半導体装置をろう付実装するに
際し、電磁波照射を受ける方向のパッケージ面に電磁波
反射板を取り付けることにより、ろう材溶融時において
もパッケージ部の昇温を抑制することができるため、熱
衡撃によるパッケージクラックの発生を抑制できること
より、前記目的を達成するものである。In addition, when electromagnetic wave irradiation is used as a heating means in the brazing material melting process and a resin-sealed semiconductor device is mounted by brazing, an electromagnetic wave reflecting plate is attached to the package surface in the direction receiving the electromagnetic wave irradiation. Since the temperature increase in the package portion can also be suppressed, the occurrence of package cracks due to thermal shock can be suppressed, thereby achieving the above object.
〔実施例１〕
本発明による実施例１は樹脂封止型半導体装置の実装方
法に関するものである。[Example 1] Example 1 according to the present invention relates to a method for mounting a resin-sealed semiconductor device.
本実施例１の実装方法は、完成された樹脂封止型半導体
装置をろう材の一つである半田を用いて基板に実装する
場合に、半田溶融工程前に半導体装置を半田溶融温度よ
り低い温度、たとえば１００〜１５０℃で所定時間、場
合によっては減圧状態で加熱処理を施しパッケージ樹脂
部の予備乾燥を行なうことに特徴があるものである。In the mounting method of Example 1, when a completed resin-sealed semiconductor device is mounted on a board using solder, which is one of the brazing materials, the semiconductor device is heated to a temperature lower than the solder melting temperature before the solder melting process. A feature of this method is that the package resin portion is pre-dried by heat treatment at a temperature of, for example, 100 to 150° C. for a predetermined period of time, and in some cases under reduced pressure.
さらに、極めて有効な具体的条件としては、温度が１２
５℃±５℃、圧力が１〜５ＷｒＩｎＨ？、時間として５
〜１０時間を提示することができる。この条件で半導体
装置を予備乾燥を行なった後、２３０℃〜２５０℃に加
熱し半田を溶融することにより基板に実装した場合は、
パッケージクラックを大巾に減少させることができるも
のである。Furthermore, as a specific condition that is extremely effective, the temperature is 12
5℃±5℃, pressure 1~5WrInH? , 5 as time
~10 hours can be presented. If a semiconductor device is pre-dried under these conditions and then mounted on a board by heating it to 230°C to 250°C and melting the solder,
This can greatly reduce package cracks.
このような実装方法に適した加熱手段としては温風加熱
、赤外線加熱等の半導体装置全体を半田溶融温度以上の
高温にさらす、いかなる手段をも採用することができる
ものである。それ故、いかなるタイプの樹脂封止型半導
体装置についても適用して有効な方法である。As a heating means suitable for such a mounting method, any means that exposes the entire semiconductor device to a high temperature higher than the solder melting temperature, such as hot air heating or infrared heating, can be employed. Therefore, it is an effective method that can be applied to any type of resin-sealed semiconductor device.
なお、半導体装置が前記予備乾燥工程を経ること罠より
、パッケージ樹脂内部に取り込まれている水分等の低沸
点物質を穏やかな条件で除去することができることより
、その後の半田溶融工程においてさらに高温に加熱され
た場合にも、水分等の蒸気による影響を避けることがで
きるものである。In addition, since the semiconductor device undergoes the pre-drying process, low-boiling substances such as moisture trapped inside the package resin can be removed under mild conditions, so that it can be heated to even higher temperatures in the subsequent solder melting process. Even when heated, it is possible to avoid the effects of steam such as moisture.
〔実施例２〕
図は、本発明による実施例２である半導体装置の実装方
法を半導体装置のほぼ中心を切る面における断面図で示
すものである。[Embodiment 2] The figure shows a method for mounting a semiconductor device according to Embodiment 2 of the present invention in a cross-sectional view along a plane cut approximately at the center of the semiconductor device.
本実施例２の実装方法は樹脂封止盤フラットパッケージ
からなる半導体装置１をその外部リード２でプリント基
板等の実装基板３の電極４に半田５を介して取り付ける
場合、図中上方にｔａ波源として赤外線ランプ６を位置
せしめ、該ランプから半導体装置１に上方より赤外線を
照射して半田５を溶融することにより該半導体装置１を
電極４との電気的接続を図ると同時に基板３に実装する
に適用して有効な方法である、
すなわち、本実装方法は基板３の電極４と半導体装置１
の外部リード２との間に半田５を挟持した状態で半導体
装置１を基板上に位置せしめて後、赤外線を照射して半
田５を溶融する際、電磁波被曝面である半導体装置１の
パンケージ上面に、赤外線反射能を備えたアルミニウム
製の電磁波反射板７を予め載置せしめ前記被曝面を被覆
しておくことに特徴があるものである。The mounting method of the second embodiment is that when a semiconductor device 1 made of a resin-sealed flat package is attached to an electrode 4 of a mounting board 3 such as a printed circuit board with its external leads 2 via solder 5, a ta wave source is located in the upper part of the figure. An infrared lamp 6 is positioned as an infrared lamp 6, and the semiconductor device 1 is irradiated with infrared rays from above to melt the solder 5, thereby electrically connecting the semiconductor device 1 to the electrode 4 and simultaneously mounting it on the substrate 3. In other words, this mounting method is an effective method when applied to the electrode 4 of the substrate 3 and the semiconductor device 1.
After placing the semiconductor device 1 on the substrate with the solder 5 sandwiched between it and the external lead 2 of the semiconductor device 1, when melting the solder 5 by irradiating infrared rays, the top surface of the pan cage of the semiconductor device 1, which is the surface exposed to electromagnetic waves, Another feature is that an electromagnetic wave reflecting plate 7 made of aluminum and having infrared reflective ability is placed in advance to cover the exposed surface.
樹脂封止型半導体装置のパッケージは、一般にカーボン
等のフィラーを充填したエポキシ樹脂等の樹脂で形成さ
れているため、赤外線吸収効率のよい黒色をしている。Packages of resin-sealed semiconductor devices are generally made of resin such as epoxy resin filled with filler such as carbon, and are therefore black in color with good infrared absorption efficiency.
そのため、半導体装置１全体に赤外線を照射し、外部リ
ード２を半田５の溶融温度、たとえば２３０〜２５０℃
に加熱した場合はパッケージが外部リード部より２０℃
以上も高温に熱せられ、それ故に大きな熱衝撃がパッケ
ージに加わることになり、パッケージクラック発生の問
題が一段と大きなものとなる。Therefore, the entire semiconductor device 1 is irradiated with infrared rays, and the external leads 2 are heated to the melting temperature of the solder 5, for example, 230 to 250°C.
If the package is heated to 20°C below the external lead part
The package is heated to such high temperatures that a large thermal shock is applied to the package, further increasing the problem of package cracking.
ところが、本実施例２の実装方法を適用する場合は、ア
ルミニウム板が赤外線を反射してくれるためパッケージ
自体の温度上昇を抑制することが、たとえば前記半田溶
融温度まで外部リード２を加熱した場合であれば、該外
部リード２より２０℃以上も低い温度に抑さえることが
できるものである。However, when the mounting method of Example 2 is applied, since the aluminum plate reflects infrared rays, it is difficult to suppress the temperature rise of the package itself, for example, when the external leads 2 are heated to the solder melting temperature. If so, the temperature can be suppressed to 20° C. or more lower than that of the external lead 2.
従って熱衝撃が原因で発生するパッケージクラックの発
生を有効に防止できるものである。また、本実装方法は
前記実施例１の方法と組合せることにより、極めて有効
なパッケージクラック防止手段となりうるものである。Therefore, package cracks caused by thermal shock can be effectively prevented. Furthermore, when this mounting method is combined with the method of Example 1, it can become an extremely effective means for preventing package cracks.
なお、本実施例２の実装方法を、面付にて実装されるい
わゆるフラットパッケージ型半導体装置１について説明
したが、本半導体装置１は図示する如く、いわゆるタブ
８に取り付けられているベレット９、該ペレットのポン
ディングパッドと内部リードとを電気的に接続している
ワイヤ１０および該内部リード等を樹脂１１でモールド
してパッケージを形成した後、外部リード２の先端をほ
ぼ該パッケージの水平方向に沿った外側方向に折曲げ成
形して形成されてなるものである。外部リード２の形状
より分かるようにフラットパッケージ型半導体装置１は
、実装基板３に薄状で実装することを目的としているた
め、一般にパッケージ自体も薄型で形成されている。そ
れ故にパッケージ内部へ外部より水分等が浸透し易いこ
とより、本実施例２の実装方法を適用するには、最も適
した半導体装置の一つである。Although the mounting method of the second embodiment has been described with respect to a so-called flat package type semiconductor device 1 that is mounted by surface mounting, the present semiconductor device 1 has a pellet 9 attached to a so-called tab 8, as shown in the figure. After molding the wire 10 electrically connecting the pellet's pounding pad and the internal lead, the internal lead, etc. with resin 11 to form a package, the tip of the external lead 2 is aligned approximately horizontally to the package. It is formed by bending and forming in the outward direction along the . As can be seen from the shape of the external leads 2, the flat package type semiconductor device 1 is intended to be mounted on the mounting board 3 in a thin shape, and therefore the package itself is generally formed in a thin shape. Therefore, it is one of the most suitable semiconductor devices to which the mounting method of the second embodiment is applied, since moisture etc. easily permeate into the inside of the package from the outside.
また、反射板を設けずに、実装基板３０半導体装置１の
実装される側の表面を少なくとも黒色に塗装するか又は
赤外線の吸収効率の良い面とすることによっても、パッ
ケージクラックの発生を抑えることができる。吸熱が良
くなるのでパッケージの温度があまり上昇しないうちに
、電極４および半田５の温度を所定の温度圧できるから
である。In addition, the occurrence of package cracks can also be suppressed by painting the surface of the mounting board 30 on the side where the semiconductor device 1 is mounted at least black or by making it a surface with good infrared absorption efficiency, without providing a reflective plate. I can do it. This is because the temperature of the electrodes 4 and the solder 5 can be brought to a predetermined temperature pressure before the package temperature rises too much because heat absorption is improved.
（１） 樹脂封止型半導体装置を装置全体を加熱してろ
う材を溶融すること罠より基板に実装する方法において
、ろう材溶融工程前にパッケージを予備乾燥することに
より、パッケージ内に存在する水分等の低沸点物質を予
め除去せしめることができるので、その後高温に加熱し
てろう材を溶融せしめる場合であってもパッケージクラ
ックの発生を有効に防止することができる。(1) In a method of mounting a resin-sealed semiconductor device on a board by heating the entire device and melting the brazing material, pre-drying the package before the brazing material melting process allows the Since low-boiling substances such as moisture can be removed in advance, package cracks can be effectively prevented even if the brazing material is subsequently heated to a high temperature to melt it.
（２）前記（１）により、半導体装置の信頼性を向上さ
せることができる。(2) According to (1) above, the reliability of the semiconductor device can be improved.
（３）予備乾燥を１００〜１５０℃で行なうことにより
、穏やかにかつ効率よく低沸点物質を揮散させることが
できる。(3) By performing preliminary drying at 100 to 150°C, low-boiling substances can be gently and efficiently volatilized.
（４）予備乾燥を減圧下で行なうことにより、単に加熱
する場合に比べ、一段と効率よくパッケージの乾燥を行
なうことができる。(4) By performing preliminary drying under reduced pressure, the package can be dried more efficiently than when simply heating.
（５）薄型パッケージからなる半導体装置は、パンケー
ジ内部にまで水分等が浸透し易いので、予備乾燥は特に
効果がある。(5) Pre-drying is particularly effective for semiconductor devices made of thin packages, since moisture and the like can easily penetrate into the inside of the package.
（６）ろう材として半田を使用することにより、本実装
方法を適用して、信頼性の高い安価な半導体装置を提供
することができる。(6) By using solder as a brazing material, it is possible to apply this mounting method to provide a highly reliable and inexpensive semiconductor device.
（７）半導体装置が小型パッケージで形成されて（・る
場合は、内部リードの埋設部が短かいので、該内部リー
ドとパッケージ樹脂との界面を伝って水分等が侵入し易
いので、本実装方法を適用するに特に適した半導体装置
である。(7) If the semiconductor device is formed in a small package, the buried part of the internal lead is short, so moisture etc. can easily enter through the interface between the internal lead and the package resin. This is a semiconductor device particularly suitable for applying the method.
（８）樹脂封止型半導体装置を電磁波を照射することに
よりろう材を溶融して基板に実装する方法において、パ
ッケージの電磁波被曝面を電磁波反射板で覆うことによ
り、電磁波を照射してろう材を溶融温度以上に加熱せし
めた場合であってもパッケージの昇温を抑制することが
できるので、熱衝撃が原因のパッケージクラックの発生
を抑制することができる。(8) In a method of mounting a resin-sealed semiconductor device on a board by irradiating electromagnetic waves to melt the brazing material, the surface of the package exposed to electromagnetic waves is covered with an electromagnetic wave reflecting plate, and the electromagnetic waves are irradiated to melt the brazing material. Even if the package is heated to a temperature higher than its melting temperature, it is possible to suppress the temperature rise of the package, so it is possible to suppress the occurrence of package cracks caused by thermal shock.
（９）電磁波として赤外線を採用すること罠より、効率
よく加熱処理を行なうことができる。(9) By using infrared rays as electromagnetic waves, heat treatment can be performed more efficiently.
ＱＯＩ 電磁波反射板を少なくとも表面を白色または白
色系の材料で形成することにより、効果的に電磁波を反
射することができる。QOI By forming at least the surface of the electromagnetic wave reflecting plate with white or white material, electromagnetic waves can be reflected effectively.
α１）電磁波反射板をアルミニウムで形成すること虻よ
り、効果的に電磁波を反射する安価な反射板を提供する
ことができる。α1) Forming the electromagnetic wave reflecting plate from aluminum By this, it is possible to provide an inexpensive reflecting plate that effectively reflects electromagnetic waves.
ａノ 前記（１）と（７）より、非常に信頼性の高い電
子機器を提供することができる。a) According to (1) and (7) above, it is possible to provide an extremely reliable electronic device.
（１３） フラットパッケージからなる半導体装置を実
装してなる電子機器については、前記（５）および（Ｉ
２より１極めて信頼性の高いものを提供することができ
る。(13) Regarding electronic equipment mounted with a semiconductor device consisting of a flat package, the above (5) and (I
2) It is possible to provide extremely reliable products.
０ａ プリント基板をパッケージ本体と同様に黒色化す
ることにより、赤外線吸収率をパッケージと同程度に出
来、半田付時の熱効率をあげられる。0a By making the printed circuit board black like the package body, the infrared absorption rate can be made to be on the same level as the package, increasing thermal efficiency during soldering.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
たとえば、実施例１においては、具体的なパッケージ形
態については説明しなかったが、半導体装置全体を加熱
してろう付実装を行なうものであれば、ソケット実装さ
れるものまたは面付実装されるもの等、いかなるもので
あっても適用できるものである。For example, although specific package forms were not explained in Example 1, if the entire semiconductor device is heated and brazed, it may be socket-mounted or surface-mounted. etc., it can be applied to anything.
また、予備乾燥の条件は実施例に示したものに限るもの
ではないことは言うまでもない。Furthermore, it goes without saying that the pre-drying conditions are not limited to those shown in the Examples.
さらに、実施例２においては、電磁波として赤外線を使
用するものについてのみ説明したが、可視光線はもとよ
り紫外線を使用するものであってもよいものである。Further, in the second embodiment, only the case where infrared rays are used as electromagnetic waves has been described, but it is also possible to use not only visible light but also ultraviolet rays.
また、電磁波反射板としてはアルミニウム製のものにつ
いてのみ説明したが、これに限るものでないことは言う
までもない。Further, although the electromagnetic wave reflecting plate has been described only as being made of aluminum, it goes without saying that the electromagnetic wave reflecting plate is not limited to this.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である樹脂封止型半導体装
置の実装方法に適用した場合について説明したが、それ
に限定されるものではなく、たとえば、エイジング等の
パッケージモールド後に高温加熱処理を施こす工程であ
ればいかなるものに適用して有効な技術に関するもので
ある。In the above description, the invention made by the present inventor was mainly applied to the mounting method of a resin-sealed semiconductor device, which is the background field of application, but the invention is not limited to this, for example, The present invention relates to a technique that can be applied effectively to any process in which high-temperature heat treatment is performed after package molding, such as aging.
図は、本発明による実施例２である半導体装置の実装方
法を示すその一工程における断面図である。
１・・・半導体装置、２・・・外部リード、３・・・実
装基板、４・・・電極、５・・・半田、６・・・赤外線
ランプ、７・・・電磁波反射板、８・・・タブ、９・・
・ペレット、１０・・・ワイヤ、１１・・・樹脂。Embodiment 2 The figure is a cross-sectional view of one step of a semiconductor device mounting method according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor device, 2... External lead, 3... Mounting board, 4... Electrode, 5... Solder, 6... Infrared lamp, 7... Electromagnetic wave reflector, 8...・Tab, 9・・
- Pellet, 10...Wire, 11...Resin.
Claims (1)
の実装方法において、半導体装置の予備乾燥工程と、ろ
う材溶融工程とからなることを特徴とする半導体装置の
実装方法。 ２、予備乾燥工程が、１００〜１５０℃の温度範囲であ
ることを特徴とする特許請求の範囲第１項記載の半導体
装置の実装方法。 ３、予備乾燥工程が、減圧下で行なわれることを特徴と
する特許請求の範囲第１項または第２項記載の半導体装
置の実装方法。 ４、半導体装置が薄型パッケージからなる半導体装置で
あることを特徴とする特許請求の範囲第１項記載の半導
体装置の実装方法。 ５、ろう材溶融工程が、赤外線照射加熱方式を採用する
ことを特徴とする特許請求の範囲第１項記載の半導体装
置の実装方法。 ６８ ろう材が半田であることを特徴とする特許請求の
範囲第１項ないし第５項のいずれか１項に記載の半導体
装置の実装方法。 ７、電磁波照射加熱方式でろう材を溶融することにより
ろう材を介して取付を行なう樹脂封止型半導体装置の実
装方法において、半導体装置のパッケージにおける電磁
波反射板を電磁波反射板で覆った状態で、電磁波を照射
することによりろう材を加熱溶融することを特徴とする
半導体装置の実装方法。 ８、電磁波が赤外線であることを特徴とする特許請求の
範囲第６項記載の半導体装置の実装方法。 ９、電磁波反射板が、少なくとも表面が白色または白色
系材料で形成されていることを特徴とする特許請求の範
囲第６項または第７項記載の半導体装置の実装方法。 １０、電磁波反射板がアルミニウムで形成されているこ
とを特徴とする特許請求の範囲第６項または第７項記載
の半導体装置の実装方法。 １１、ろう材が半田であることを特徴とする特許請求の
範囲第７項ないし第１０項のいずれか１項に記載の半導
体装置の実装方法、 １２．半導体装置が面付実装で基板に取り付けられる半
導体装置であることを特徴とする特許請求の範囲第７項
記載の半導体装置の実装方法。[Claims] 1. A method for mounting a resin-sealed semiconductor device by mounting it through a brazing material, which comprises a preliminary drying step of the semiconductor device and a step of melting the brazing material. How to implement. 2. The semiconductor device mounting method according to claim 1, wherein the pre-drying step is performed at a temperature in the range of 100 to 150°C. 3. The method for mounting a semiconductor device according to claim 1 or 2, wherein the preliminary drying step is performed under reduced pressure. 4. The method of mounting a semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device comprising a thin package. 5. The semiconductor device mounting method according to claim 1, wherein the brazing material melting step employs an infrared irradiation heating method. 68. The method for mounting a semiconductor device according to any one of claims 1 to 5, wherein the brazing material is solder. 7. In a mounting method for a resin-sealed semiconductor device in which the soldering material is melted using an electromagnetic wave irradiation heating method and the soldering material is attached via the soldering material, the electromagnetic reflecting plate in the package of the semiconductor device is covered with the electromagnetic reflecting plate. , a semiconductor device mounting method characterized by heating and melting a brazing material by irradiating electromagnetic waves. 8. The method for mounting a semiconductor device according to claim 6, wherein the electromagnetic wave is infrared rays. 9. The method for mounting a semiconductor device according to claim 6 or 7, wherein at least the surface of the electromagnetic wave reflecting plate is formed of white or white-based material. 10. The method for mounting a semiconductor device according to claim 6 or 7, wherein the electromagnetic wave reflecting plate is made of aluminum. 11. A method for mounting a semiconductor device according to any one of claims 7 to 10, wherein the brazing material is solder; 12. 8. The method of mounting a semiconductor device according to claim 7, wherein the semiconductor device is a semiconductor device that is attached to a substrate by surface mounting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59081864A JPS60226145A (en) | 1984-04-25 | 1984-04-25 | Mounting process of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59081864A JPS60226145A (en) | 1984-04-25 | 1984-04-25 | Mounting process of semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1159581A Division JPH0256994A (en) | 1989-06-23 | 1989-06-23 | Mounting method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226145A true JPS60226145A (en) | 1985-11-11 |
| JPH0317238B2 JPH0317238B2 (en) | 1991-03-07 |
Family
ID=13758337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59081864A Granted JPS60226145A (en) | 1984-04-25 | 1984-04-25 | Mounting process of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226145A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02265252A (en) * | 1989-04-05 | 1990-10-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| KR970053759A (en) * | 1995-12-29 | 1997-07-31 | 황인길 | Surface repellent treatment method of semiconductor package |
| US6223893B1 (en) | 1986-11-25 | 2001-05-01 | Hitachi, Ltd. | Surface package type semiconductor package and method of producing semiconductor memory |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5072169A (en) * | 1973-10-31 | 1975-06-14 | ||
| JPS536875A (en) * | 1976-07-09 | 1978-01-21 | Fujitsu Ltd | Method of producing multilayer printed board |
| JPS5329509A (en) * | 1976-08-31 | 1978-03-18 | Toshiba Corp | Rotary electric machine |
| JPS5521127A (en) * | 1978-08-02 | 1980-02-15 | Hitachi Ltd | Method of mounting semiconductor device |
| JPS56167395A (en) * | 1980-05-27 | 1981-12-23 | Mitsubishi Electric Corp | Method of mounting part on circuit board |
| JPS5750496A (en) * | 1980-09-12 | 1982-03-24 | Hitachi Ltd | Method of reflowing soldering paste |
| JPS5754389A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | KAIROKIBANNOHANDAZUKEHOHO |
-
1984
- 1984-04-25 JP JP59081864A patent/JPS60226145A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5072169A (en) * | 1973-10-31 | 1975-06-14 | ||
| JPS536875A (en) * | 1976-07-09 | 1978-01-21 | Fujitsu Ltd | Method of producing multilayer printed board |
| JPS5329509A (en) * | 1976-08-31 | 1978-03-18 | Toshiba Corp | Rotary electric machine |
| JPS5521127A (en) * | 1978-08-02 | 1980-02-15 | Hitachi Ltd | Method of mounting semiconductor device |
| JPS56167395A (en) * | 1980-05-27 | 1981-12-23 | Mitsubishi Electric Corp | Method of mounting part on circuit board |
| JPS5750496A (en) * | 1980-09-12 | 1982-03-24 | Hitachi Ltd | Method of reflowing soldering paste |
| JPS5754389A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | KAIROKIBANNOHANDAZUKEHOHO |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6223893B1 (en) | 1986-11-25 | 2001-05-01 | Hitachi, Ltd. | Surface package type semiconductor package and method of producing semiconductor memory |
| US6443298B2 (en) | 1986-11-25 | 2002-09-03 | Hitachi, Ltd. | Surface package type semiconductor package and method of producing semiconductor memory |
| US6981585B2 (en) | 1986-11-25 | 2006-01-03 | Renesas Technology Corp. | Surface package type semiconductor package and method of producing semiconductor memory |
| JPH02265252A (en) * | 1989-04-05 | 1990-10-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| KR970053759A (en) * | 1995-12-29 | 1997-07-31 | 황인길 | Surface repellent treatment method of semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0317238B2 (en) | 1991-03-07 |
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| Date | Code | Title | Description |
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| EXPY | Cancellation because of completion of term |