JPS6318325A - Manufacture of liquid crystal element - Google Patents
Manufacture of liquid crystal elementInfo
- Publication number
- JPS6318325A JPS6318325A JP16078386A JP16078386A JPS6318325A JP S6318325 A JPS6318325 A JP S6318325A JP 16078386 A JP16078386 A JP 16078386A JP 16078386 A JP16078386 A JP 16078386A JP S6318325 A JPS6318325 A JP S6318325A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid crystal
- forming
- film
- crystal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000007740 vapor deposition Methods 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 239000000428 dust Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は液晶素子の製造方法に関し、特に均一なセル厚
を得る液晶素子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a liquid crystal device, and more particularly to a method for manufacturing a liquid crystal device that obtains a uniform cell thickness.
[従来の技術]
従来、液晶素子の製造工程としては、基板上にスパッタ
方式なとて導電被膜を成膜し、フォトリソグラフィー技
術によって電極パターンを形成した後、配向処理被膜を
塗布した2枚の基板を間隙を介して接着し、その間隙に
液晶材を注入して液晶素子を形成する方法か一般的に行
われている。[Prior art] Conventionally, the manufacturing process for liquid crystal elements involves forming a conductive film on a substrate by sputtering, forming an electrode pattern using photolithography, and then forming two sheets coated with an alignment film. A commonly used method is to bond substrates through a gap and inject a liquid crystal material into the gap to form a liquid crystal element.
しかし、この方法てはフォトリソグラフィー技術を使用
するため、基板が大気あるいは溶媒に曝されることが多
く、環境中に存在する微細なゴミが基板に付着し易く、
特に極端に薄くしかも均一なセル厚を得るためには基板
へのゴミの付着が大きな問題となり、歩留りの低下につ
ながっていた。However, since this method uses photolithography technology, the substrate is often exposed to the atmosphere or solvent, making it easy for minute dust present in the environment to adhere to the substrate.
In particular, in order to obtain an extremely thin and uniform cell thickness, the adhesion of dust to the substrate becomes a major problem, leading to a decrease in yield.
[発明が解決しようとする問題点]
本発明は前記の様な従来技術の欠点を解決し、製造工程
を簡略化すると共にゴミの発生しにくい雰囲気下で製造
を行うことにより、歩留り8よび品質の向上とコストダ
ウンを計った液晶素子の製造方法を提供することを目的
とするものである。[Problems to be Solved by the Invention] The present invention solves the drawbacks of the prior art as described above, simplifies the manufacturing process, and performs the manufacturing in an atmosphere where dust is less likely to be generated. It is an object of the present invention to provide a method for manufacturing a liquid crystal element that improves performance and reduces costs.
[問題点を解決するための手段]
即ち、本発明は少なくとも片面にストライプ状の電極群
を形成した2枚の基板とその間に挟持された液晶材を有
する液晶素子の製造方法において、基板上に電極となる
導電被膜を成膜した後電極群のパターンを形成し、さら
に配向処理被膜を成膜するまての工程を、真空中で、該
真空を破ることなく、−貫して行うことを特徴とする液
晶素子の製造方法である。[Means for Solving the Problems] That is, the present invention provides a method for manufacturing a liquid crystal element having two substrates each having a striped electrode group formed on at least one side and a liquid crystal material sandwiched between them. After forming the conductive film that will become the electrode, forming the pattern of the electrode group, and then forming the orientation treatment film, the process is performed in a vacuum without breaking the vacuum. This is a characteristic method for manufacturing a liquid crystal element.
以下、本発明を図面に基づいて詳細に説明する。Hereinafter, the present invention will be explained in detail based on the drawings.
第2図は本発明の方法により形成されたドツトマトリク
ス型の液晶素子における片側基板の一例を示す部分断面
図である。同第2図において、lはガラスなどの基板、
2は透明電極(ITO) 、 3は金属電極、4は配向
処理被膜であり、実際のセルとしては配向処理被膜4の
上方に液晶材を介して対抗基板か存在してなるものであ
る。FIG. 2 is a partial cross-sectional view showing an example of one side substrate in a dot matrix type liquid crystal element formed by the method of the present invention. In Fig. 2, l is a substrate such as glass,
Reference numeral 2 denotes a transparent electrode (ITO), 3 a metal electrode, and 4 an alignment film.In an actual cell, an opposing substrate is present above the alignment film 4 with a liquid crystal material interposed therebetween.
第1図は第2図に示す基板を形成するロードロック式の
真空装置の説明図である。FIG. 1 is an explanatory diagram of a load-lock type vacuum apparatus for forming the substrate shown in FIG. 2.
同第1図において、5は基板加熱室、6はITO蒸着室
、7は金属電極蒸着室、8はレーザーバターニング室、
9は配向膜蒸着室、10は各室の排気系てあり、前記5
〜9の各室はゲートバルブによって粛なかっている。In FIG. 1, 5 is a substrate heating chamber, 6 is an ITO deposition chamber, 7 is a metal electrode deposition chamber, 8 is a laser patterning chamber,
9 is an alignment film deposition chamber; 10 is an exhaust system for each chamber;
Each of the chambers 9 to 9 is shut off by a gate valve.
まず、洗浄された基板1は図中Aから基板加熱室5に入
る。この後排気系10により、5〜9の各室はすべて真
空状態に保たれる。その状態て、基板1は基板加熱室5
内で一定温度に加熱され、基板1の表面にあらかじめ付
着している不純物はすべて除去される。First, the cleaned substrate 1 enters the substrate heating chamber 5 from A in the figure. Thereafter, the exhaust system 10 maintains all chambers 5 to 9 in a vacuum state. In that state, the substrate 1 is placed in the substrate heating chamber 5.
The substrate 1 is heated to a constant temperature within the substrate 1, and all impurities previously attached to the surface of the substrate 1 are removed.
次に、すでに真空状態となっているITo 75着室6
にゲートバルブを介して基板1を移動し、例えば、スパ
ッタ法などにより基板表面にITO(第2図の2に相当
する)膜が成膜される。Next, ITo 75 Arrival Room 6, which is already in a vacuum state,
Then, the substrate 1 is moved through a gate valve, and an ITO film (corresponding to 2 in FIG. 2) is formed on the surface of the substrate by, for example, sputtering.
同様に金属電極蒸着室7て前記ITo膜の上に金属電極
が成膜された後、レーザーパターニング室8に入る。Similarly, after a metal electrode is formed on the ITo film in the metal electrode deposition chamber 7, the laser patterning chamber 8 is entered.
ここで、レーザー光を選択的に金属電極及びITOMに
照射し、該レーザー光でパターン以外の金属電極の被膜
およびITo膜を消失せしめて所望のパターンを形成す
る。Here, the metal electrode and the ITOM are selectively irradiated with laser light, and the laser light erases the metal electrode coating and ITo film other than the pattern, thereby forming a desired pattern.
最後に配向膜蒸着室9に入り、例えばSin、の斜め蒸
着などにより、電極上に配向処理被!!4が形成され、
ここて初めて真空が破られ配向処理被膜4まで形成され
た基板は図中Bより取り出される。Finally, the film enters the alignment film deposition chamber 9 and undergoes an alignment process on the electrodes by diagonal vapor deposition of, for example, Sin! ! 4 is formed,
At this point, the vacuum is broken for the first time, and the substrate on which the alignment treatment film 4 has been formed is taken out from B in the figure.
この後、基板はシール材などで対向基板と間隙を介して
接着され、該間隙に液晶材を注入することにより、ドツ
トマトリクス型の液晶素子を得ることができる。Thereafter, the substrate is bonded to a counter substrate through a gap using a sealing material or the like, and a liquid crystal material is injected into the gap to obtain a dot matrix type liquid crystal element.
本発明において、排気系により保持されたる真空状態は
、約10−’Torr以下、好ましくは10−’〜1O
−2Torrが望ましい。In the present invention, the vacuum maintained by the evacuation system is about 10-' Torr or less, preferably 10-' to 1 O
-2 Torr is desirable.
また、金属電極の被膜およびTTOfiを消失せしめパ
ターンを形成するレーザー光としては、発振波長1.0
6g+aのYAGレーザーなどの赤外線レーザーを用い
ることがてきる。In addition, the laser beam that eliminates the metal electrode coating and TTOfi and forms a pattern has an oscillation wavelength of 1.0.
An infrared laser such as a 6g+a YAG laser can be used.
以上説明した様に、本発明の液晶素子の製造工程におい
ては基板が大気あるいは溶媒にほとんど接触することな
く形成されるため、環境中のゴミの影響がなく、セル厚
を極端に薄くした場合ても均〒なセル厚を歩留り良く得
ることが可能である。As explained above, in the manufacturing process of the liquid crystal element of the present invention, the substrate is formed with almost no contact with the atmosphere or solvent, so there is no influence from environmental dust, and even if the cell thickness is made extremely thin, It is also possible to obtain uniform cell thickness with good yield.
なお、本発明における真空中て形成される基板はセルを
構成する1枚或いは2枚の基板の両方に対しても適用す
ることができる。Note that the substrate formed in vacuum according to the present invention can be applied to both one or two substrates forming a cell.
[作用コ
本発明の液晶素子の製造方法は、前記液晶素子の基板へ
配向処理被膜を成膜するまての工程を、すべて真空中で
該真空を一度も破ることなく一貫して行うのて基板が外
界に曝されることがほとんどないため、環境中の微細な
ゴミか基板に付着することがなく、セル厚が極端に薄く
、しかも均一なセルを歩留り良く製造することか可能で
あり、ひいてはコストダウンにつながるものである。[Function] The method for manufacturing a liquid crystal element of the present invention is such that all the steps up to forming an alignment treatment film on the substrate of the liquid crystal element are consistently performed in a vacuum without breaking the vacuum even once. Since the substrate is almost never exposed to the outside world, fine dust in the environment will not adhere to the substrate, making it possible to manufacture cells with extremely thin and uniform cell thickness at a high yield. This in turn leads to cost reduction.
[実施例] 以下、実施例を示し本発明をさらに具体的に説明する。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例1
第1図に示すロードロック式の真空装置を使用して液晶
素子の製造を行った。Example 1 A liquid crystal element was manufactured using a load-lock type vacuum apparatus shown in FIG.
2枚のガラス基板を基板加熱室に収容し、装置内をロー
タリーポンプて排気して各室を約10−4丁orrの真
空状態に保った。Two glass substrates were placed in a substrate heating chamber, and the inside of the apparatus was evacuated using a rotary pump to maintain each chamber in a vacuum state of about 10<-4 >orr.
次いて、基板加熱室を加熱した後、ゲートバルブを介し
てITO蒸着室へ移動せしめ、該ITO蒸着室において
スパッタ法により厚さ900AのITOfiを形成した
。Next, after heating the substrate heating chamber, the substrate was moved to an ITO deposition chamber via a gate valve, and ITOfi having a thickness of 900 A was formed in the ITO deposition chamber by sputtering.
次に、ゲートバルブを介して金属電極蒸着室に導入し、
CVD (Chemical Vapor Depos
ition)法により厚さ 100AのAPの被膜を形
成した後、レザーバターニング室において、2+sJ、
波長1 、06B、ビーム径101のYAGレーザーを
1パルス20n sec、移動速度50mm+/sec
で前記金属電極の被膜およびITO膜に照射して不必要
な部分を消失せしめて、ストライプ状の電極群パターン
を形成した。Next, it is introduced into the metal electrode deposition chamber through the gate valve,
CVD (Chemical Vapor Deposits)
After forming an AP film with a thickness of 100A by the ion method, 2+sJ,
YAG laser with wavelength 1, 06B, beam diameter 101, 1 pulse 20nsec, moving speed 50mm+/sec
Then, the metal electrode coating and ITO film were irradiated to eliminate unnecessary portions, thereby forming a striped electrode group pattern.
次に、配向膜蒸着室に導入し、斜め蒸着法により厚さ1
00OAの5in2の配向膜を形成した後、真空系を常
圧に戻し真空装置から基板を取り出した。Next, it is introduced into an alignment film deposition chamber, and a thickness of 1
After forming a 5 in 2 alignment film of 00 OA, the vacuum system was returned to normal pressure and the substrate was taken out from the vacuum apparatus.
得られた基板の一軸性配向軸が平行となる様に2枚の基
板を互に対向させ、スペーサーとして平均粒径IBφの
Aj!203を介在せしめて間隙を形成し、接着剤で周
囲をシールして液晶セルを得た。Two substrates were placed facing each other so that the uniaxial orientation axes of the obtained substrates were parallel to each other, and Aj! of average particle diameter IBφ was used as a spacer. 203 to form a gap, and the periphery was sealed with an adhesive to obtain a liquid crystal cell.
該液晶セルに強誘電性液晶であるチッソ社製のC810
11(商品名)を常法により注入したところ、ドツトマ
トリックス型の双安定性強誘電性液晶素子が得られた。C810 manufactured by Chisso Corporation, which is a ferroelectric liquid crystal, is used in the liquid crystal cell.
When No. 11 (trade name) was injected by a conventional method, a dot matrix type bistable ferroelectric liquid crystal device was obtained.
[発明の効果コ
以上説明した様に本発明の液晶素子の製造方法によれば
、ゴミによる歩留りあるいは品質の低下がなく、均一な
セル厚の液晶素子を安定して()ることが可能となり、
歩留り向上、ひいてはコストダウンにつながる優れた効
果を得ることかできる。[Effects of the Invention] As explained above, according to the method for manufacturing a liquid crystal device of the present invention, there is no reduction in yield or quality due to dust, and it is possible to stably produce a liquid crystal device with a uniform cell thickness. ,
It is possible to obtain excellent effects that lead to improved yield and ultimately cost reduction.
第1図は本発明において使用される真空装置の一例を示
す説明図および第2図は本発明を用いて形成された液晶
素子の片側基板の一例を示す部分断面図である。
1・・・基板 2・・・透明電極3・・・
金属電極 4・・・配向翅理被膜5・・・基板
加熱室 6・・・ITO蒸着室7・・・金属電極
蒸着室
8・・・レーザーバターニング室
9・・・配向膜蒸着室
10・・・排気系FIG. 1 is an explanatory view showing an example of a vacuum apparatus used in the present invention, and FIG. 2 is a partial sectional view showing an example of one side substrate of a liquid crystal element formed using the present invention. 1...Substrate 2...Transparent electrode 3...
Metal electrode 4... Oriented grain coating 5... Substrate heating chamber 6... ITO vapor deposition chamber 7... Metal electrode vapor deposition chamber 8... Laser buttering chamber 9... Alignment film vapor deposition chamber 10.・Exhaust system
Claims (3)
た2枚の基板とその間に挟持された液晶材を有する液晶
素子の製造方法において、基板上に電極となる導電被膜
を成膜した後、電極群のパターンを形成し、さらに配向
処理被膜を成膜するまでの工程を、真空中で、該真空を
破ることなく一貫して行うことを特徴とする液晶素子の
製造方法。(1) In a method for manufacturing a liquid crystal element having two substrates each having a striped electrode group formed on at least one side and a liquid crystal material sandwiched between them, after forming a conductive film to serve as an electrode on the substrate, A method for manufacturing a liquid crystal element, characterized in that the steps from forming a group pattern to forming an alignment treatment film are performed in a vacuum without breaking the vacuum.
して真空を破ることなしに次の工程を行う特許請求の範
囲第1項記載の液晶素子の製造方法。(2) The method for manufacturing a liquid crystal element according to claim 1, wherein in the manufacturing step, the next step is performed without breaking the vacuum using a load lock device.
レーザー光照射により形成する特許請求の範囲第1項又
は第2項記載の液晶素子の製造方法。(3) The method for manufacturing a liquid crystal element according to claim 1 or 2, wherein in the manufacturing step, the pattern of the electrode group is formed by irradiation with laser light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16078386A JPS6318325A (en) | 1986-07-10 | 1986-07-10 | Manufacture of liquid crystal element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16078386A JPS6318325A (en) | 1986-07-10 | 1986-07-10 | Manufacture of liquid crystal element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6318325A true JPS6318325A (en) | 1988-01-26 |
Family
ID=15722352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16078386A Pending JPS6318325A (en) | 1986-07-10 | 1986-07-10 | Manufacture of liquid crystal element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6318325A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008033076A (en) * | 2006-07-31 | 2008-02-14 | Victor Co Of Japan Ltd | Method for manufacturing liquid crystal display element and manufacturing apparatus therefor |
-
1986
- 1986-07-10 JP JP16078386A patent/JPS6318325A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008033076A (en) * | 2006-07-31 | 2008-02-14 | Victor Co Of Japan Ltd | Method for manufacturing liquid crystal display element and manufacturing apparatus therefor |
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