JPS63178548A - Package for electronic part and manufacture thereof - Google Patents
Package for electronic part and manufacture thereofInfo
- Publication number
- JPS63178548A JPS63178548A JP1089987A JP1089987A JPS63178548A JP S63178548 A JPS63178548 A JP S63178548A JP 1089987 A JP1089987 A JP 1089987A JP 1089987 A JP1089987 A JP 1089987A JP S63178548 A JPS63178548 A JP S63178548A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- lead frame
- metal alloy
- package
- ceramic composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 114
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 59
- 239000000203 mixture Substances 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000005245 sintering Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000008602 contraction Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003475 lamination Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004353 Ti-Cu Inorganic materials 0.000 description 1
- 229910004337 Ti-Ni Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910011209 Ti—Ni Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、入出力用回路等にリードフレームを用い、絶
縁体にはセラミックを用いた、半導体素子等を収容する
電子部品用パッケージとその製造方法に関する。Detailed Description of the Invention "Field of Industrial Application" The present invention relates to a package for electronic components containing semiconductor elements, etc., which uses a lead frame for input/output circuits, etc., and uses ceramic as an insulator. Regarding the manufacturing method.
「従来の技術」
従来の半導体素子等の電子部品を収容するセラミックパ
ッケージには、マルチレイヤー型等と呼ばれるグリーン
シートを用いる積層法によるパッケージと、サーディツ
プ型等と呼ばれる予め焼成されたセラミック基体を用い
るパッケージとがある。そのうち、積層法によるものは
、その表面等にメタライズ層等の導体層を備えたセラミ
ック組成物のグリーンシートを複数枚積層して一体に焼
成した後、外部リードを接合して形成する。また、予め
焼成されたセラミック基体を用いるものは、リードフレ
ームを低融点ガラスを用いてセラミッり基体に接合して
形成する。"Conventional technology" Conventional ceramic packages that house electronic components such as semiconductor devices include packages that use a lamination method using green sheets, called multilayer packages, and packages that use pre-fired ceramic substrates, called cerdip packages. There is a package. Among these, those using the lamination method are formed by laminating a plurality of green sheets of a ceramic composition each having a conductive layer such as a metallized layer on the surface thereof, firing them together, and then joining external leads. Further, in the case of using a pre-fired ceramic base, the lead frame is bonded to the ceramic base using low melting point glass.
「発明が解決しようとする問題点」
ところで、上述した従来の積層法によるセラミックパッ
ケージは、気密性が優れていて、半導体素子等を収容す
るパッケージとして高い信頼性が得られるが、その製造
工程が繁雑で、製造コストが高くなるという難点があっ
た。またこの場合、外部リードは焼成したセラミック表
面のメタライズ層にろう付けにより接合しなければなら
なかった。"Problems to be Solved by the Invention" By the way, the above-mentioned ceramic package made by the conventional lamination method has excellent airtightness and is highly reliable as a package for accommodating semiconductor elements, etc., but the manufacturing process is The problem was that it was complicated and the manufacturing cost was high. Furthermore, in this case, the external leads had to be joined to the metallized layer on the surface of the fired ceramic by brazing.
また、サーディツプ型と呼ばれるセラミックパッケージ
は、リードフレームを機械的強度の弱い低融点ガラス部
材を用いてセラミック基体に接合させているので、衝撃
力に弱く、リードフレームと低融点ガラス部材との境界
部分における気密性が不安定である等の難点があった。In addition, in ceramic packages called cerdip type, the lead frame is bonded to the ceramic base using a low-melting glass member with weak mechanical strength, so it is vulnerable to impact forces, and the boundary between the lead frame and the low-melting glass member There were problems such as unstable airtightness.
本発明は、かかる問題点を解決するためになされたもの
で、その目的は、気密性が高く、機械的強度の高いセラ
ミックパッケージであって、しかもその製造工程が従来
の積層法などに比べて、極めて簡易化、短縮化できる電
子部品用パッケージとその製造方法を提供することにあ
る。The present invention has been made to solve these problems, and its purpose is to provide a ceramic package with high airtightness and high mechanical strength, and which has a manufacturing process that is faster than conventional lamination methods. An object of the present invention is to provide a package for electronic components that can be extremely simplified and shortened, and a manufacturing method thereof.
［間謡点を解決するための手段］
上記目的を達成するために、本発明の電子部品用パッケ
ージｌは、第１図、第２図、第３図にその構成例を示す
ように、リードフレーム２の内部リード部５の少なくと
も先端部を除く周囲を低温焼成セラミック３で一体に覆
うと共に、前記内部リード部５とその周囲の前記セラミ
ック３との間を活性化金属を含む金属合金４を用いて気
密接合させてなることを特徴とする。[Means for solving the problem] In order to achieve the above object, the electronic component package l of the present invention has a lead structure as shown in FIGS. 1, 2, and 3. The periphery of the internal lead portion 5 of the frame 2, excluding at least the tip, is integrally covered with a low-temperature fired ceramic 3, and a metal alloy 4 containing an activated metal is coated between the internal lead portion 5 and the ceramic 3 around the internal lead portion 5. It is characterized by being airtightly sealed using
また、本発明の電子部品用パッケージの製造方法は、リ
ードフレーム２の内部リード部５の少なくとも先端部を
除く周囲を低温焼成セラミック組成物で一体に覆うと共
に、前記内部リード部５とその周囲の前記セラミック組
成物との間に、活性化金属を含む、融点が前記セラミッ
ク組成物の焼結開始温度やリードフレーム２の融点より
低い金属合金４を介在させた後、前記セラミック組成物
の焼成を行うと同時に、リードフレーム２の前記内部リ
ード部５に前記金属合金４を介してセラミック３を気密
接合させて、前記内部リード部５の周囲をセラミック３
で一体に覆うことを特徴とする。Further, in the method for manufacturing an electronic component package of the present invention, the periphery of the internal lead portion 5 of the lead frame 2 except at least the tip portion is integrally covered with a low-temperature fired ceramic composition, and the internal lead portion 5 and its surroundings are After interposing a metal alloy 4 containing an activated metal and having a melting point lower than the sintering start temperature of the ceramic composition or the melting point of the lead frame 2 between the ceramic composition and the ceramic composition, the ceramic composition is fired. At the same time, the ceramic 3 is hermetically sealed to the internal lead portion 5 of the lead frame 2 via the metal alloy 4, and the ceramic 3 is sealed around the internal lead portion 5.
It is characterized by being integrally covered with.
「作用」
本発明の電子部品用パッケージ１においては、入出力用
回路等を構成するリードフレーム２の内部リード部５の
周囲を、セラミック３で一体に覆う構造とした。従って
、内部リード部５の周囲を覆うセラミック３は、継ぎ目
の無い一体の構造となり、気密性の極めて高いセラミッ
クパッケージを構成できる。また、本発明の電子部品用
パッケージｌでは、内部リード部５とその周囲のセラミ
ック３との間を、内部リード部５とセラミック３に共に
馴染み易く機械的強度の高い金属合金４を用いて気密接
合させた。従って、リードフレームをガラス部材を用い
てセラミック基体に接合させたサーディツプ型のパッケ
ージに比べて、衝撃力に強くて機械的強度が高く、気密
性の高いセラミックパッケージを構成できる。"Function" The electronic component package 1 of the present invention has a structure in which the periphery of the internal lead portion 5 of the lead frame 2 constituting the input/output circuit etc. is integrally covered with the ceramic 3. Therefore, the ceramic 3 surrounding the internal lead portion 5 has a seamless, integral structure, making it possible to construct a highly airtight ceramic package. Furthermore, in the electronic component package l of the present invention, a metal alloy 4 having high mechanical strength and easily adapting to both the internal lead part 5 and the ceramic 3 is used to create an airtight seal between the internal lead part 5 and the surrounding ceramic 3. Joined. Therefore, compared to a cerdip type package in which a lead frame is bonded to a ceramic substrate using a glass member, a ceramic package that is resistant to impact forces, has high mechanical strength, and has high airtightness can be constructed.
また、本発明の電子部品用パッケージの製造方法におい
ては、内部リード部５の周囲を覆うセラミック組成物の
焼成時に、内部リード部５とその周囲のセラミック組成
物との間に、接合材および緩衝材として活性化金属を含
む金属合金４を介在させた。従って、セラミック組成物
の焼成時に上記の金属合金４中の活性化金属がリードフ
レーム２と金属合金４、および焼成したセラミック３と
金属合金４との各境界部分に両者を堅固に結合させる金
属間化合物を的確に形成して、該各画者を安定して堅固
に気密接合させる。また、内部リード部５とその周囲の
セラミック組成物との間に、融点がセラミック組成物の
焼結開始温度やリードフレーム２の融点より低い金属合
金４を介在させた。従って、リードフレーム２の融点よ
り低い温度でセラミック組成物が焼結し初めて大きく収
縮する際には、金属合金４が溶融状態となって、その形
状が内部リード部５および焼成中のセラミック組成物の
寸法変化の相違を吸収するように自在に変化して、該両
者間の気密性を的確に保持すると共に、この溶融した金
属合金４が緩衝材となって該両者間に過大な応力が掛か
るのを防止する。Further, in the method for manufacturing an electronic component package of the present invention, when firing the ceramic composition that covers the inner lead part 5, a bonding material and a buffer are added between the inner lead part 5 and the surrounding ceramic composition. A metal alloy 4 containing an activated metal was interposed as a material. Therefore, when the ceramic composition is fired, the activated metal in the metal alloy 4 is bonded to each boundary between the lead frame 2 and the metal alloy 4, and between the fired ceramic 3 and the metal alloy 4 to firmly bond them. The compound is precisely formed to form a stable and firm hermetic seal between the respective painters. Further, a metal alloy 4 having a melting point lower than the sintering start temperature of the ceramic composition and the melting point of the lead frame 2 was interposed between the internal lead portion 5 and the surrounding ceramic composition. Therefore, when the ceramic composition is sintered at a temperature lower than the melting point of the lead frame 2 and shrinks significantly for the first time, the metal alloy 4 is in a molten state and its shape is similar to that of the inner lead portion 5 and the ceramic composition being fired. The molten metal alloy 4 changes freely to absorb the difference in dimensional changes to accurately maintain airtightness between the two, and the molten metal alloy 4 acts as a buffer material to prevent excessive stress from being applied between the two. to prevent
さらに、焼成したセラミック３と内部リード部５とがそ
れぞれ大小の異なる熱収縮率で収縮しながら冷却する際
には、内部リード部５とその周囲の焼成したセラミック
３との間で、金属合金４が緩衝材となって、内部リード
部５とその周囲の焼成セラミック３との間に気密性を阻
害することとなるような過大な応力が掛かることがない
。Furthermore, when the fired ceramic 3 and the internal lead part 5 are cooled while shrinking with different thermal contraction rates, the metal alloy 4 is heated between the internal lead part 5 and the surrounding fired ceramic 3. acts as a buffer material, and no excessive stress is applied between the internal lead portion 5 and the surrounding fired ceramic 3 that would impede airtightness.
「実施例」
次に、本発明の実施例につき、図面に従い説明する。第
１図ないし第３図は、本発明の電子部品用パッケージｌ
を示し、第１図は該パッケージの斜視図、第２図は該パ
ッケージの縦断面図、第３図は第１図中のパッケージの
内部リード部５部分の拡大縦断面図である。以下、この
パッケージｌの構造を説明する。２は、半導体素子等を
搭載するステージ６および内部リード部５とそれに続く
外部リード部７を併せ持つリードフレームで、該リード
フレーム２の外部リード部７、内部リード部５の先端部
上面およびステージ６上面を除くリードフレーム２の周
囲全体が、アルミナガラスセラミック等の低温焼成セラ
ミック３で一体に覆われている。そして、リードフレー
ム２とその周囲のセラミック３とで、第１図に示すよう
な、その表面中央部に半導体素子等を収容する有底のキ
ャビティ８を有し、該キャビティ底面にリードフレーム
のステージ６上面が、また、キャビティ内周部には内部
リード部５の先端部上面が露出したほぼ方形状の電子部
品用パッケージＩが構成されている。また、内部リード
部５とその周囲を覆うセラミック３との間が、接合材お
よび緩衝材としてのＴｉ−Ｃｕ合金、Ｔｉ−Ｎｉ合金、
Ｔｉ−Ｎ１−Ａｇ合金等の活性化金属を含む金属合金４
を介して堅固に一体に気密接合されている。さらに、図
中の実施例では、キャビティ８周囲のセラミック３」二
面に、キャップ封止用のシール用金属枠９が、リードフ
レーム２と同様な金属合金４を介してセラミック３中に
一体に埋設されている。第１図ないし第３図に示したパ
ッケージｌは以上の構成からなる。なお、上述実施例の
パッケージｌにおいて、キャビティ周囲のセラミツク３
上面に、シール用金属枠９の代わりに、同時焼成法等に
よりシール用メタライズ層等を備えても良い。"Example" Next, an example of the present invention will be described with reference to the drawings. 1 to 3 show the electronic component package l of the present invention.
1 is a perspective view of the package, FIG. 2 is a longitudinal sectional view of the package, and FIG. 3 is an enlarged longitudinal sectional view of the internal lead portion 5 of the package in FIG. 1. The structure of this package 1 will be explained below. Reference numeral 2 denotes a lead frame having a stage 6 on which a semiconductor element or the like is mounted, an internal lead part 5, and an external lead part 7 following it. The entire periphery of the lead frame 2 except for the top surface is integrally covered with a low temperature fired ceramic 3 such as alumina glass ceramic. The lead frame 2 and the surrounding ceramic 3 have a bottomed cavity 8 in the center of its surface for accommodating a semiconductor element, etc., as shown in FIG. A substantially rectangular electronic component package I is constructed in which the top surface of the electronic component 6 is exposed, and the top surface of the tip of the internal lead portion 5 is exposed at the inner periphery of the cavity. Moreover, between the internal lead part 5 and the ceramic 3 covering the periphery thereof, a Ti-Cu alloy, a Ti-Ni alloy, as a bonding material and a buffer material,
Metal alloy 4 containing activated metal such as Ti-N1-Ag alloy
are tightly and airtightly joined together through the Furthermore, in the embodiment shown in the figure, a sealing metal frame 9 for sealing the cap is integrated into the ceramic 3 on two sides of the ceramic 3 around the cavity 8 via a metal alloy 4 similar to the lead frame 2. It is buried. The package 1 shown in FIGS. 1 to 3 has the above structure. In addition, in the package l of the above-mentioned embodiment, the ceramic 3 around the cavity
Instead of the metal frame 9 for sealing, a metallized layer for sealing or the like may be provided on the upper surface by a co-firing method or the like.
次に、上述の電子部品用パッケージｌを製造するための
本発明の電子部品用パッケージの製造方法について説明
する。まず、４２ＡＬＬＯＹ、コバール、銅合金等から
なるリードフレーム２の内部リード部５の周囲のセラミ
ック３と気密接合させるべき表面部分、即ちワイヤボン
ディングのための内部リード部５の先端部上面を除く周
囲とステージ６裏面に、チタン、ジルコニウム等の活性
化金属を含み、融点が上記のセラミック組成物の焼結開
始温度やリードフレーム２の融点より低い、接合材およ
び緩衝材としてのＴｔ−Ｃｕ合金、Ｔｉ−Ｎｉ合金、Ｔ
ｉ−Ｎｉ−Ａｇ合金等の金属合金４を、蒸着法、クラブ
ト法、ペースト塗布法等より、被着させる。次に、この
金属合金４を被着させたリードフレーム２を成形金型内
に挿入すると共に、同じ金型内に、リードフレーム２の
融点より低い温度８００℃〜ｔｏｏｏ℃で焼成可能な、
有機バインダー等を混入させて造粒したアルミナ−ガラ
ス系などの低温焼成セラミック組成物を、射出成形機等
を用いて低温加熱してスラリー状としながら加圧注入し
、リードフレーム２の金属合金４を被着させた所定部分
周囲を、セラミック組成物でその外形が第１図に示した
電子部品用パッケージｌの体裁をなすように一体に覆う
。次に、このリードフレーム２の所定部分周囲をセラミ
ック組成物で覆ったパッケージ部材を電気炉内等に入れ
てリードフレーム２の融点以下の８００℃〜１０００℃
程度に加熱して、該パッケージ部材のリードフレーム２
周囲のセラミック組成物の焼成を行う。Next, a method for manufacturing an electronic component package according to the present invention for manufacturing the above-mentioned electronic component package 1 will be described. First, the surface area around the internal lead part 5 of the lead frame 2 made of 42ALLOY, Kovar, copper alloy, etc. that should be airtightly bonded to the ceramic 3, that is, the surrounding area excluding the top surface of the tip of the internal lead part 5 for wire bonding. On the back side of the stage 6, a Tt-Cu alloy containing activated metals such as titanium and zirconium and having a melting point lower than the sintering start temperature of the ceramic composition and the melting point of the lead frame 2, used as a bonding material and a buffer material, is used. -Ni alloy, T
A metal alloy 4 such as an i-Ni-Ag alloy is deposited by a vapor deposition method, a Krabt method, a paste coating method, or the like. Next, the lead frame 2 coated with this metal alloy 4 is inserted into a molding die, and in the same die, a mold is placed that can be fired at a temperature of 800°C to toooo°C, which is lower than the melting point of the lead frame 2.
A low-temperature firing ceramic composition such as alumina-glass based granulated with an organic binder mixed therein is heated at low temperature using an injection molding machine etc. to form a slurry and then injected under pressure to form the metal alloy 4 of the lead frame 2. The area around the predetermined portion to which it has been deposited is integrally covered with a ceramic composition so that its external shape resembles the electronic component package 1 shown in FIG. Next, the package member, in which a predetermined portion of the lead frame 2 is covered with a ceramic composition, is placed in an electric furnace or the like and heated to a temperature of 800°C to 1000°C below the melting point of the leadframe 2.
The lead frame 2 of the package member is heated to a certain degree.
Perform firing of the surrounding ceramic composition.
すると、セラミック組成物の焼成時に、金属合金４中の
活性化金属が、リードフレーム２と金属合金４との境界
部分およびセラミック組成物と金属合金４との境界部分
に該各両者間を堅固に結合させる金属間化合物を的確に
形成して、金属合金４がリードフレーム２とその周囲の
焼成セラミック３とを強固に気密接合させる。また、焼
成中にセラミック組成物が焼結し始めて大きく収縮する
際には、金属合金４が溶融状態となってリードフレ−ム
２および焼結を開始したセラミック組成物の寸法変化の
違いを吸収するようにその形状が自在に変化し、該両者
間の気密性を的確に保持すると共に、この溶融した金属
合金４が緩衝材となって、該両者間に過大な応力が掛か
ることがない。また、リードフレーム２周囲の焼成セラ
ミック３が冷却する際には、両者間に介在させた例えば
熱収縮係数が焼成セラミック３の熱収縮係数とリードフ
レーム２の熱収縮係数との中間の値を持つ金属合金４が
緩衝材となって、焼成セラミック３がリードフレーム２
に対してその熱収縮率が大きく異なって収縮しても両者
間に過大な応力が掛かることがなく、焼成したセラミッ
ク３にクラックが入ったりリードフレーム２が変形する
ことがない。Then, when the ceramic composition is fired, the activated metal in the metal alloy 4 forms a solid bond between the lead frame 2 and the metal alloy 4 and the ceramic composition and the metal alloy 4. By accurately forming an intermetallic compound to be bonded, the metal alloy 4 tightly and airtightly connects the lead frame 2 and the fired ceramic 3 surrounding the lead frame 2. Additionally, when the ceramic composition begins to sinter and shrinks significantly during firing, the metal alloy 4 becomes molten and absorbs the difference in dimensional changes of the lead frame 2 and the ceramic composition that has started sintering. As such, its shape changes freely, and the airtightness between the two is accurately maintained, and the molten metal alloy 4 acts as a buffer material to prevent excessive stress from being applied between the two. Further, when the fired ceramic 3 around the lead frame 2 is cooled, for example, the heat contraction coefficient interposed between the two has an intermediate value between the heat contraction coefficient of the fired ceramic 3 and the heat contraction coefficient of the lead frame 2. The metal alloy 4 serves as a buffer material, and the fired ceramic 3 serves as a lead frame 2.
Even if the heat shrinkage rate is greatly different from that of the lead frame 2, excessive stress will not be applied between the two, and the fired ceramic 3 will not be cracked or the lead frame 2 will be deformed.
以上のようにして、リードフレーム２の所定部分周囲を
焼成セラミック３で一体に覆うと共に、リードフレーム
２とその周囲のセラミック３との間を金属合金４を用い
て気密接合させた電子部品用パッケージｌを製造する。As described above, an electronic component package is provided in which a predetermined portion of the lead frame 2 is integrally covered with the fired ceramic 3, and the lead frame 2 and the surrounding ceramic 3 are hermetically sealed using the metal alloy 4. Manufacture l.
なお、図中のパッケージ１のようにキャビティ８周囲の
セラミツク３上面中にシール用金属枠９をセラミツと一
体に埋設する場合は、リードフレーム２周囲をセラミッ
ク組成物で一体に覆う際に、その周囲に金属合金４を被
着させたシール用金属枠９をリードフレーム２と共に成
形金型内に収容してセラミック組成物と一体に成形、焼
成して製造する。In addition, when the sealing metal frame 9 is buried integrally with the ceramic in the upper surface of the ceramic 3 around the cavity 8 as in the package 1 in the figure, when the lead frame 2 is integrally covered with the ceramic composition, its A metal frame 9 for sealing around which a metal alloy 4 is coated is housed in a mold together with a lead frame 2, and is manufactured by integrally molding and firing a ceramic composition.
第４図には、上述のリードフレーム２周囲を覆うセラミ
ック組成物の焼成を行った際における、リードフレーム
２周間をセラミック組成物で覆ったパッケージ部材を晒
す雰囲気温度プロフィールと、該温度プロフィール下に
おけるリードフレーム２とセラミック組成物の熱膨張状
態と熱収縮状態、および該両者間に介在させた金属合金
４の熱膨張状態と熱収縮状態を示し、図中の下部の図は
」二足のパッケージ部材を晒す雰囲気温度プロフィール
を示し、図中の」二部の図は上記の温度プロフィール下
におけるリードフレーム２、セラミック組成物、金属合
金４の熱膨張状態と熱収縮状態を示す。以下、この図を
説明すると、図中において、焼成中のセラミック組成物
が初期の脱脂域Ｖにある時、即ちセラミック組成物中に
混入させた有機バインダー等を加熱して揮散させる際に
は、図中の一点鎖線Ｘで示す金属合金４は、一旦膨張し
た後再び収縮する。その際、破線Ｙで示すセラミック組
成物は熱膨張も熱収縮も殆どしない。また、実線Ｚで示
すリードフレーム２は、金属合金４と同様に一旦熱膨張
した後再び収縮する。次に、脱脂済みのリードフレーム
２周囲のセラミック組成物の焼成を行う際には、セラミ
ック組成物は、破線Ｙで示すように、最初しばらくの間
然膨張も熱収縮もしない。この際、金属合金４およびリ
ードフレーム２は、一点鎖線Ｘおよび実線Ｚで示すよう
に、はぼ一定の比率で熱膨張し続ける。そして、熱膨張
し続けた金属合金４が図中の溶融域Ｍに達して溶融状態
となると、焼成中のセラミック組成物が焼結し始めて図
中のＳ域に達し急激に階段状に収縮する。その後、焼成
セラミック３を冷却させるのに伴って、金属合金４が溶
融域Ｍを脱してほぼ一定の比率で熱収縮し続ける。その
際、リードフレーム２は金属合金４より高いほぼ一定の
比率で熱収縮し続け、焼成セラミック３は金属合金４よ
り低いほぼ一定の比率で熱収縮し続ける。そして、セラ
ミック組成物の焼成時に、リードフレーム２、セラミッ
ク組成物、および該両者間に介在させた金属合金４が、
この様な熱膨張および熱収縮を経た後、リードフレーム
２の所定部分周囲にセラミック３が金属合金４を介して
堅固に一体に気密接合する。FIG. 4 shows the atmospheric temperature profile to which the package member whose periphery of the lead frame 2 is covered with the ceramic composition is exposed when firing the ceramic composition that covers the periphery of the lead frame 2, and the temperature profile below the temperature profile. The lower part of the figure shows the state of thermal expansion and contraction of the lead frame 2 and the ceramic composition, as well as the state of thermal expansion and contraction of the metal alloy 4 interposed between the two. The temperature profile of the atmosphere to which the package member is exposed is shown, and the second part of the figure shows the state of thermal expansion and contraction of the lead frame 2, the ceramic composition, and the metal alloy 4 under the above temperature profile. To explain this figure below, in the figure, when the ceramic composition during firing is in the initial degreasing region V, that is, when the organic binder etc. mixed into the ceramic composition is heated and volatilized, The metal alloy 4 indicated by the dashed line X in the figure expands once and then contracts again. At this time, the ceramic composition indicated by the broken line Y exhibits almost no thermal expansion or thermal contraction. Further, the lead frame 2 indicated by the solid line Z, like the metal alloy 4, once thermally expands and then contracts again. Next, when firing the ceramic composition around the degreased lead frame 2, the ceramic composition does not expand or thermally contract for a while, as shown by the broken line Y. At this time, the metal alloy 4 and the lead frame 2 continue to thermally expand at a nearly constant rate, as shown by the dashed line X and the solid line Z. Then, when the metal alloy 4 that continues to thermally expand reaches the melting region M in the figure and becomes molten, the ceramic composition being fired begins to sinter and reaches the S region in the figure, rapidly shrinking in a stepwise manner. . Thereafter, as the fired ceramic 3 is cooled, the metal alloy 4 leaves the melting zone M and continues to thermally shrink at a substantially constant rate. At this time, the lead frame 2 continues to be heat-shrinked at a substantially constant rate higher than that of the metal alloy 4, and the fired ceramic 3 continues to be heat-shrinked at a substantially constant rate lower than that of the metal alloy 4. Then, when the ceramic composition is fired, the lead frame 2, the ceramic composition, and the metal alloy 4 interposed between the two,
After undergoing such thermal expansion and contraction, the ceramic 3 is tightly and airtightly joined around a predetermined portion of the lead frame 2 via the metal alloy 4.
なお、焼成時に、リードフレーム２とその周囲のセラミ
ック組成物との間に介在させる金属合金４は、共晶合金
であることが望ましい。なぜならば、金属合金４が共晶
合金であれば、該金属合金がセラミック組成物の焼成時
に溶融する際に、その全体が均一かつ的確に溶融状態と
なってリードフレーム２とセラミック組成物との間の接
合材および緩衝材としての作用を的確に果たすことかで
き、かつ、その一旦溶融状態となった金属合金４が冷却
固化する際に、その全体が均一の状態に冷却固化して、
金属合金４中にピンホールが形成されにくく、その組成
が均一でむらのない金属合金４を介してリードフレーム
２の周囲にセラミック３を安定して的確に気密接合させ
ることができるからである。Note that the metal alloy 4 interposed between the lead frame 2 and the surrounding ceramic composition during firing is preferably a eutectic alloy. This is because, if the metal alloy 4 is a eutectic alloy, when the metal alloy is melted during firing of the ceramic composition, the entire metal alloy becomes uniformly and accurately molten, and the lead frame 2 and the ceramic composition are bonded together. When the metal alloy 4, once in a molten state, is cooled and solidified, the entire metal alloy 4 is cooled and solidified in a uniform state.
This is because pinholes are less likely to be formed in the metal alloy 4, and the ceramic 3 can be stably and accurately hermetically bonded around the lead frame 2 via the metal alloy 4 whose composition is uniform and even.
このようにしてリードフレーム２周囲にセラミック３を
一体に気密接合させた後は、セラミツク３外部に露出し
たリードフレーム２表面の酸化皮膜除去等を行った後、
該リードフレームに所要の金めつき等の表面処理を施し
て電子部品用パッケージｌを完成する。After the ceramic 3 is hermetically sealed around the lead frame 2 in this way, the oxide film on the surface of the lead frame 2 exposed to the outside of the ceramic 3 is removed.
The lead frame is subjected to necessary surface treatments such as gold plating to complete the electronic component package l.
「発明の効果」
以上の述べたように、本発明の電子部品用パッケージに
おいては、リードフレームの所定部分周囲を覆うセラミ
ックを継ぎ目のない一体の構造に形成すると共に、リー
ドフレームとその周囲のセラミックとの間を、衝撃力に
強く、機械的強度の高い、リードフレームとセラミック
に共に良く馴染む金属合金を用いて気密接合させた。従
って、従来のセラミックパッケージに比べて、衝撃力に
強く、機械的強度が高く、気密性の高い電子部品用パッ
ケージを構成できる。"Effects of the Invention" As described above, in the electronic component package of the present invention, the ceramic covering the predetermined portion of the lead frame is formed into a seamless integral structure, and the lead frame and the ceramic surrounding it are formed into a seamless integrated structure. A metal alloy that is resistant to impact, has high mechanical strength, and is compatible with both the lead frame and ceramic is used to form an airtight connection between the lead frame and the ceramic. Therefore, compared to conventional ceramic packages, it is possible to construct a package for electronic components that is resistant to impact forces, has high mechanical strength, and has high airtightness.
また、本発明の電子部品用パッケージの製造方法におい
ては、リードフレームとその周囲を覆うセラミック組成
物との間に介在させた金属合金中の活性化金属が、セラ
ミック組成物の焼成時に、リードフレームと金属合金の
境界部分およびセラミック組成物と金属合金との境界部
分に該各画者を堅固に結合させる金属間化合物を的確に
形成して、該金属合金がリードフレームとその周囲のセ
ラミックとを堅固に安定して気密接合させ、該両者間の
気密性を的確に保持すると共に、該金属合金が緩衝材の
役目を果たして、リードフレームとその周囲のセラミッ
クとの間に過大な応力が掛かるのを防止できる。さらに
、射出成型法等による一体成形法を用いており、マルチ
レイヤー型等のパッケージを製造する場合に比べて、そ
の製造工程を極めて簡易化でき、製造コストの大幅な低
減化を図ることができる。Further, in the method for manufacturing an electronic component package of the present invention, the activated metal in the metal alloy interposed between the lead frame and the ceramic composition surrounding the lead frame is activated when the ceramic composition is fired. An intermetallic compound that firmly connects each imager is formed precisely at the interface between the lead frame and the metal alloy, and between the ceramic composition and the metal alloy, so that the metal alloy bonds between the lead frame and the surrounding ceramic. In addition to ensuring a firm and stable airtight connection and maintaining airtightness between the two, the metal alloy also acts as a buffer material to prevent excessive stress from being applied between the lead frame and the surrounding ceramic. can be prevented. Furthermore, since it uses an integral molding method such as injection molding, the manufacturing process can be extremely simplified compared to manufacturing multi-layer packages, and manufacturing costs can be significantly reduced. .
第１図は本発明の電子部品用パッケージの斜視図、第２
図は第１図中のパッケージの縦断面図、第３図は第１図
中のパッケージの内部リード部部分の拡大縦断面図、第
４図は本発明の電子部品用パッケージを焼成する際の所
定雰囲気温度プロフィール下におけるリードフレーム、
セラミック組成物および金属合金の熱膨張状態と熱収縮
状態の説明図である。
■・・電子部品用パッケージ、
２・・リードフレーム、
３・・セラミック、 ４・・金属合金、５・・内部リ
ード部、 ６・・ステージ、７・・外部リード部、
８・・キャビティ、■・・脱脂域、 Ｍ・・溶触域
。FIG. 1 is a perspective view of the electronic component package of the present invention, and FIG.
The figure is a vertical sectional view of the package in FIG. 1, FIG. 3 is an enlarged vertical sectional view of the internal lead portion of the package in FIG. 1, and FIG. lead frame under a predetermined ambient temperature profile;
FIG. 2 is an explanatory diagram of the thermal expansion state and thermal contraction state of a ceramic composition and a metal alloy. ■...Electronic component package, 2...Lead frame, 3...Ceramic, 4...Metal alloy, 5...Inner lead part, 6...Stage, 7...Outer lead part,
8...Cavity, ■...Degreasing area, M...Welding area.
Claims (1)
を除く周囲を低温焼成セラミックで一体に覆うと共に、
前記内部リード部とその周囲の前記セラミックとの間を
活性化金属を含む金属合金を用いて気密接合させてなる
電子部品用パッケージ。 ２、リードフレームの内部リード部の少なくとも先端部
を除く周囲を低温焼成セラミック組成物で一体に覆うと
共に、前記内部リード部とその周囲の前記セラミック組
成物との間に、活性化金属を含む、融点が前記セラミッ
ク組成物の焼結開始温度やリードフレームの融点より低
い金属合金を介在させた後、前記セラミック組成物の焼
成を行うと同時に、リードフレームの前記内部リード部
に前記金属合金を介してセラミックを気密接合させて、
前記内部リード部の周囲をセラミックで一体に覆うこと
を特徴とする電子部品用パッケージの製造方法。[Claims] 1. The periphery of the internal lead portion of the lead frame except for at least the tip portion is integrally covered with low-temperature fired ceramic, and
An electronic component package, wherein the internal lead portion and the ceramic surrounding the internal lead portion are hermetically sealed using a metal alloy containing an activated metal. 2. The periphery of the internal lead portion of the lead frame except for at least the tip portion is integrally covered with a low-temperature fired ceramic composition, and an activated metal is included between the internal lead portion and the ceramic composition around the internal lead portion. After interposing a metal alloy whose melting point is lower than the sintering start temperature of the ceramic composition or the melting point of the lead frame, the ceramic composition is fired and at the same time, the metal alloy is interposed in the internal lead part of the lead frame. to airtightly seal the ceramic together.
A method for manufacturing an electronic component package, characterized in that the periphery of the internal lead portion is integrally covered with ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1089987A JPS63178548A (en) | 1987-01-20 | 1987-01-20 | Package for electronic part and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1089987A JPS63178548A (en) | 1987-01-20 | 1987-01-20 | Package for electronic part and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63178548A true JPS63178548A (en) | 1988-07-22 |
Family
ID=11763145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1089987A Pending JPS63178548A (en) | 1987-01-20 | 1987-01-20 | Package for electronic part and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63178548A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252444U (en) * | 1988-10-07 | 1990-04-16 | ||
| JP2008073547A (en) * | 1993-11-22 | 2008-04-03 | Amerigon Inc | Device realizing variable seat temperature |
| US7963594B2 (en) | 2006-11-01 | 2011-06-21 | Amerigon Incorporated | Chair with air conditioning device |
| USRE47574E1 (en) | 2006-05-31 | 2019-08-20 | Gentherm Incorporated | Structure based fluid distribution system |
| US10589647B2 (en) | 2013-12-05 | 2020-03-17 | Gentherm Incorporated | Systems and methods for climate controlled seats |
-
1987
- 1987-01-20 JP JP1089987A patent/JPS63178548A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252444U (en) * | 1988-10-07 | 1990-04-16 | ||
| JPH0741159Y2 (en) * | 1988-10-07 | 1995-09-20 | 日本特殊陶業株式会社 | Hermetically sealed ceramic package |
| JP2008073547A (en) * | 1993-11-22 | 2008-04-03 | Amerigon Inc | Device realizing variable seat temperature |
| USRE47574E1 (en) | 2006-05-31 | 2019-08-20 | Gentherm Incorporated | Structure based fluid distribution system |
| US7963594B2 (en) | 2006-11-01 | 2011-06-21 | Amerigon Incorporated | Chair with air conditioning device |
| US10589647B2 (en) | 2013-12-05 | 2020-03-17 | Gentherm Incorporated | Systems and methods for climate controlled seats |
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