JPS63177518A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS63177518A
JPS63177518A JP957987A JP957987A JPS63177518A JP S63177518 A JPS63177518 A JP S63177518A JP 957987 A JP957987 A JP 957987A JP 957987 A JP957987 A JP 957987A JP S63177518 A JPS63177518 A JP S63177518A
Authority
JP
Japan
Prior art keywords
film
semiconductor substrate
resist pattern
resin
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP957987A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0511652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazuhiko Urayama
和彦 浦山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP957987A priority Critical patent/JPS63177518A/ja
Publication of JPS63177518A publication Critical patent/JPS63177518A/ja
Publication of JPH0511652B2 publication Critical patent/JPH0511652B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP957987A 1987-01-19 1987-01-19 パタ−ン形成方法 Granted JPS63177518A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP957987A JPS63177518A (ja) 1987-01-19 1987-01-19 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP957987A JPS63177518A (ja) 1987-01-19 1987-01-19 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS63177518A true JPS63177518A (ja) 1988-07-21
JPH0511652B2 JPH0511652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-16

Family

ID=11724220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP957987A Granted JPS63177518A (ja) 1987-01-19 1987-01-19 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS63177518A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01219740A (ja) * 1988-02-26 1989-09-01 Mitsubishi Electric Corp パターン形成方法
JPH0299959A (ja) * 1988-10-06 1990-04-11 Matsushita Electric Ind Co Ltd パターン形成方法
JPH0384920A (ja) * 1989-08-28 1991-04-10 Nec Corp レジストパターンの現像方法
JPH08211630A (ja) * 1995-02-06 1996-08-20 Sanken Electric Co Ltd レジストパタ−ンの形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01219740A (ja) * 1988-02-26 1989-09-01 Mitsubishi Electric Corp パターン形成方法
JPH0299959A (ja) * 1988-10-06 1990-04-11 Matsushita Electric Ind Co Ltd パターン形成方法
JPH0384920A (ja) * 1989-08-28 1991-04-10 Nec Corp レジストパターンの現像方法
JPH08211630A (ja) * 1995-02-06 1996-08-20 Sanken Electric Co Ltd レジストパタ−ンの形成方法

Also Published As

Publication number Publication date
JPH0511652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-16

Similar Documents

Publication Publication Date Title
JPH06326222A (ja) 光学的画像形成可能材料、フォトレジスト材料等に高い高アスペクト比のvia及び溝を形成する方法
DE69023874T2 (de) Allgemeine Ätz-Stoppschichten aus Salzen von polyamischer Säure für reaktives ionisches Ätzen.
JP2994501B2 (ja) パターン形成方法
JPS63177518A (ja) パタ−ン形成方法
JPH0446346A (ja) 半導体装置の製造方法
JPS63200531A (ja) 半導体装置の製造方法
JPH07199482A (ja) レジストパターン形成方法
JP3304250B2 (ja) 感光性樹脂組成物の硬化方法
JPH0385544A (ja) レジストパターン形成方法
JPS62129849A (ja) ポジ型ホトレジストパタ−ンの安定化方法
JPH0515300B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0458170B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0943855A (ja) レジストパターン形成方法
JPH0354817A (ja) パタン形成方法
JPH0470755A (ja) パターン形成方法
KR0119272B1 (ko) 광 스텝퍼와 e-빔 사진전사 혼합 공정방법
JPH0562894A (ja) 微細パターン形成方法
JPH06275514A (ja) レジストパターン形成方法
JPH07105334B2 (ja) レジストパターンの現像方法
JPS638739A (ja) ポジ型ホトレジストパタ−ンの硬膜化方法
JPS59180545A (ja) 乾式現像用ポジ型レジスト材料
JPH01179043A (ja) フォトレジストパターンの形成方法
JPH05175114A (ja) 半導体装置の製造方法
JPH03196516A (ja) レジストパターンの現像方法
JPH03147315A (ja) パターン形成方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees