JPS63177502A - Manufacture of film resistor - Google Patents

Manufacture of film resistor

Info

Publication number
JPS63177502A
JPS63177502A JP62010786A JP1078687A JPS63177502A JP S63177502 A JPS63177502 A JP S63177502A JP 62010786 A JP62010786 A JP 62010786A JP 1078687 A JP1078687 A JP 1078687A JP S63177502 A JPS63177502 A JP S63177502A
Authority
JP
Japan
Prior art keywords
film
resistor
trimming
pair
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62010786A
Other languages
Japanese (ja)
Inventor
積田 義之
大木 昇
斉木 敬史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP62010786A priority Critical patent/JPS63177502A/en
Publication of JPS63177502A publication Critical patent/JPS63177502A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は混成集積回路の厚膜抵抗又はこれに類似の膜抵
抗の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing thick film resistors or similar film resistors for hybrid integrated circuits.

[従来の技術] 従来の厚膜抵抗は第3図に示す如く形成されており、こ
れを製造する時には、まずアルミナ基板1の上に銀パラ
ジウムペースト又は銅ベースト等の導体ペーストを印刷
し、乾燥し、焼成することによって対の電極導体2.3
を他の配線導体と共に形成し、次に、この対の電極導体
2.3を結ぶように基板1及び電極導体2.3上に抵抗
体ベーストを印刷し、乾燥し、焼成することによって厚
膜抵抗体4を形成し、次に、オーバーコートガラスを印
刷し、乾燥し、焼成することによってオーバーコートガ
ラス85を形成し、しかる後、オーバーコートガラス膜
5の上にレーザビームを投射し、オーバーコートガラス
膜うおよび厚膜抵抗体4に切溝6を形成することによっ
て抵抗値調整を行った。
[Prior Art] A conventional thick film resistor is formed as shown in FIG. 3. When manufacturing this, first, a conductive paste such as silver palladium paste or copper base paste is printed on an alumina substrate 1, and then dried. The pair of electrode conductors 2.3 is then baked.
is formed together with other wiring conductors, and then a resistor base is printed on the substrate 1 and the electrode conductor 2.3 so as to connect this pair of electrode conductors 2.3, dried, and fired to form a thick film. After forming the resistor 4, an overcoat glass 85 is formed by printing, drying and baking overcoat glass, and then a laser beam is projected onto the overcoat glass film 5 to form an overcoat glass 85. The resistance value was adjusted by forming grooves 6 in the coated glass membrane and the thick film resistor 4.

[発明が解決しようとする問題点] 相互間隔の狭い対の電極導体2.3間に厚膜抵抗体4を
形成すると、電極導体2.3の上部よりも基板1上にお
いて厚膜抵抗体4の厚さが必然的に厚くなり、トリミン
グに要する時間が長くなった。また、切溝6に抵抗体が
残り、抵抗値が不安定になった。この種の問題は、電極
導体2.3及びこれに接続される配!!導体を銅ペース
トを使用して形成する場合に顕著に生じた。
[Problems to be Solved by the Invention] When the thick film resistor 4 is formed between the pair of electrode conductors 2.3 that are closely spaced from each other, the thick film resistor 4 is formed more on the substrate 1 than on the upper part of the electrode conductors 2.3. As a result, the amount of time required for trimming increased. Further, a resistor remained in the kerf 6, making the resistance value unstable. This kind of problem is caused by the electrode conductor 2.3 and the wiring connected to it. ! This problem occurred significantly when the conductor was formed using copper paste.

銅ペーストを使用する場合には、銅を酸化させないため
に、抵抗ペーストの印刷後に窒素雰囲気中で焼成可能な
酸化タンクルガラス含有のランタン−ボロン系抵抗体ペ
ースト等の昇華し難い材料を使用しなければならず、必
然的に抵抗体のトリミングに要する時間が長くなった。
When using copper paste, to avoid oxidizing the copper, use a material that is difficult to sublimate, such as a lanthanum-boron resistor paste containing oxidized tank glass that can be fired in a nitrogen atmosphere after printing the resistor paste. This inevitably increased the time required to trim the resistor.

そこで、本発明の目的は、トリミングに要する時間を短
くすることができる膜抵抗体の製造方法を提供すること
にある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a film resistor that can shorten the time required for trimming.

[問題点を解決するための手段] 上記問題点を解決し、上記目的を達成するための本発明
は、実施例を示す第1図及び第2図の符号を参照して説
明すると、絶縁基板11上の対の電極導体12.13の
相互間における少なくとも一部に絶縁体[15を形成し
、次に、前記絶縁体膜15の少なくとも一部を覆い且つ
前記対の電極導体12.13を相互に接続するように膜
抵抗体18を形成し、しかる後、前記膜抵抗体18にお
ける前記絶縁体M15の上の領域をトリミングする膜抵
抗の製造方法に係わるものである。
[Means for Solving the Problems] The present invention for solving the above problems and achieving the above objects will be described with reference to the reference numerals in FIGS. 1 and 2 showing embodiments. An insulator [15 is formed between at least a portion of the pair of electrode conductors 12.13 on the electrode conductor 11, and then an insulator [15] is formed to cover at least a portion of the insulator film 15 and the pair of electrode conductors 12.13. The present invention relates to a method of manufacturing a film resistor, in which film resistors 18 are formed so as to be connected to each other, and then a region of the film resistor 18 above the insulator M15 is trimmed.

[作用コ 本発明に従って設けた絶縁体JI115の上の膜抵抗体
18の厚さは、基板11上に比較して薄くなる。このた
め、トリミングによって昇華させる膜抵抗体18の体積
が少なくなり、トリミングに要する時間が短くなる。
[Operations] The thickness of the film resistor 18 on the insulator JI 115 provided according to the present invention is thinner than that on the substrate 11. Therefore, the volume of the film resistor 18 sublimated by trimming is reduced, and the time required for trimming is shortened.

[実施例] 次に、第1図及び第2図に基づいて本発明の実施例に係
わる混成集積回路装置の製造方法を説明する。まず、ア
ルミナ基板11上に銅粉末とガラス粉末等から成る銅ペ
ーストを印刷し、120°C10分乾燥し、N2雰囲気
中、850℃で焼成して約14μmの厚さを有する対の
電極導体12.13及び下側配線導体14を形成する。
[Example] Next, a method for manufacturing a hybrid integrated circuit device according to an example of the present invention will be described based on FIGS. 1 and 2. First, a copper paste made of copper powder, glass powder, etc. is printed on an alumina substrate 11, dried at 120°C for 10 minutes, and fired at 850°C in a N2 atmosphere to form a pair of electrode conductors 12 with a thickness of about 14 μm. .13 and the lower wiring conductor 14 are formed.

次に、結晶化ガラスペーストを基板11上のトリミング
予定領域とクロス配線領域とに印刷し、120°C11
0分乾燥し、N2雰囲気、850°Cで焼成して絶縁体
膜15及びクロスオーバーガラス膜16を形成する。絶
縁体膜15は対の電極導体12.13の相互間に、対の
電極導体12.13とほぼ同じ約14μmの膜厚となる
ように形成する。
Next, a crystallized glass paste is printed on the area to be trimmed and the cross wiring area on the substrate 11, and
After drying for 0 minutes, the insulator film 15 and crossover glass film 16 are formed by baking at 850° C. in a N2 atmosphere. The insulating film 15 is formed between the pair of electrode conductors 12.13 so as to have a film thickness of approximately 14 μm, which is approximately the same as that of the pair of electrode conductors 12.13.

次に、クロスオーバーガラス膜16を通るように導体ペ
ーストを印刷し、乾燥し、焼成することによって上側配
線導体17を形成する。
Next, a conductive paste is printed so as to pass through the crossover glass film 16, dried, and fired to form the upper wiring conductor 17.

次に、対の電極導体12.13及び絶縁体膜15の上及
び対の電極導体12.13を結ぶ基板11上に100Ω
/ロ酸化タンタルガラス含有のランタン−ボロン系抵抗
体ペーストを印刷し、120℃、10分乾燥し、N2雰
囲気、850℃で焼成して、膜厚21μm、縦幅1.5
閣、横幅3.4鴎の厚膜抵抗体18を形成する。
Next, a 100Ω resistor was applied on the pair of electrode conductors 12.13 and the insulator film 15, and on the substrate 11 connecting the pair of electrode conductors 12.13.
/ A lanthanum-boron based resistor paste containing tantalum oxide glass was printed, dried at 120°C for 10 minutes, and baked at 850°C in an N2 atmosphere to form a film with a thickness of 21 μm and a vertical width of 1.5 μm.
Then, a thick film resistor 18 having a width of 3.4 mm is formed.

次に、オーバーコートガラスペーストを少なくとも抵抗
体18の上に印刷し、120℃、10分乾燥し、N2雰
囲気、530℃で焼成して厚さ約10μmの保護膜19
を形成する。
Next, an overcoat glass paste is printed on at least the resistor 18, dried at 120°C for 10 minutes, and baked at 530°C in an N2 atmosphere to form a protective film 19 with a thickness of about 10 μm.
form.

これにより、対の電極導体12.13間の抵抗値は23
0Ω〜260Ωとなる。目標抵抗値は、370Ω±1%
であるからレーザートリミング装置を使用して、レーザ
ービームを絶縁体膜15上の厚膜抵抗体18に保護膜1
9を介して投射し、切溝20を形成し、所望抵抗値にす
る。レーザートリミングは、ビーム径50μm、平均出
力1.2W、パルス周波数3KHz、トリミングスピー
ド15ffilI/ Secで行った。これにより±1
%以上の抵抗値のaII整ができな。
As a result, the resistance value between the pair of electrode conductors 12 and 13 is 23
It becomes 0Ω to 260Ω. Target resistance value is 370Ω±1%
Therefore, using a laser trimming device, a laser beam is applied to the thick film resistor 18 on the insulating film 15 to cut the protective film 1.
9 to form a kerf 20 and achieve the desired resistance value. Laser trimming was performed with a beam diameter of 50 μm, average power of 1.2 W, pulse frequency of 3 KHz, and trimming speed of 15 ffilI/Sec. As a result, ±1
It is not possible to adjust aII for a resistance value of % or more.

これに対して、第3図の従来例において、トリミング前
の抵抗体4の抵抗値200〜230Ωを目標抵抗値32
0Ωに向かってレーザートリミングする際に、ビーム径
50μm、平均出力1.6Wパルス周波数IKHz、ス
ピード5閲/secにしなければならず、もし、5g/
Secよりもトリミングスピードを大幅に上げると、切
溝6に抵抗体が残ってしまった。また、従来例の場合に
は、抵抗値のバラツキが一2%〜+5%程度生じ、本実
施例よりも大きくなった。上記の比較から明らかな如く
、本発明に従う方法によれば、トリミングスピードを上
げることが可能になり、作業時間を大幅に短くすること
ができる。なお、本実施例におけるトリミングスピード
(15+ml/ SeC)は、RuO系抵抗体のトリミ
ングスピードにほぼ等しい値である。従って、不活性(
N2)雰囲気中で焼成可能な酸化タンタルガラス含有の
ランタン−ボロン系抵抗体ペーストで抵抗体ペーストに
基づく昇華し難い抵抗体18であっても、従来のRu 
OZ系抵抗体と同様にトリミングすることができる。
On the other hand, in the conventional example shown in FIG.
When laser trimming toward 0Ω, the beam diameter is 50 μm, the average output is 1.6 W, the pulse frequency is IKHz, and the speed is 5 views/sec.
When the trimming speed was significantly increased above Sec, the resistor remained in the kerf 6. Further, in the case of the conventional example, the variation in resistance value occurred by about 12% to +5%, which was larger than that of the present example. As is clear from the above comparison, the method according to the present invention makes it possible to increase the trimming speed and significantly shorten the working time. Note that the trimming speed (15+ml/SeC) in this example is approximately equal to the trimming speed of the RuO-based resistor. Therefore, inert (
N2) Even if the resistor 18 is a lanthanum-boron-based resistor paste containing tantalum oxide glass that can be fired in an atmosphere and is difficult to sublime based on the resistor paste, the conventional Ru
It can be trimmed in the same way as OZ-based resistors.

実施例には次の利点がある。The embodiment has the following advantages.

(1)トリミング部の抵抗体18の膜厚が従来よりも4
0〜50%程度小さくなるなめ、昇華させるべき抵抗体
の体積が減少し、高速且つ高精度なトリミングが可能に
なる。
(1) The film thickness of the resistor 18 in the trimming part is 44 mm thicker than before.
Since the size is reduced by about 0 to 50%, the volume of the resistor to be sublimated is reduced, and high-speed and highly accurate trimming becomes possible.

(2)絶縁体膜15は、クロスオーバーガラス膜16と
同時に形成するので、工数の増加とならない。
(2) Since the insulating film 15 is formed at the same time as the crossover glass film 16, the number of steps does not increase.

[変形例] 本発明は、上述の実施例に限定されるものでなく、変形
可能なものである。例えば、絶縁体膜15を対の電極導
体12.13の間の全部に設けてもよい。また、保護膜
19を形成する前に抵抗体18の粗トリミングを行い、
保護膜19を形成した後に微調整トリミングを行っても
よい。
[Modifications] The present invention is not limited to the above-described embodiments, but can be modified. For example, the insulating film 15 may be provided entirely between the pair of electrode conductors 12.13. In addition, before forming the protective film 19, the resistor 18 is roughly trimmed,
Fine adjustment trimming may be performed after forming the protective film 19.

[発明の効果] 上述からあきらかな如く、本発明によれば、抵抗体の高
速且つ高精度トリミングが可能になる。
[Effects of the Invention] As is clear from the above, the present invention enables high-speed and highly accurate trimming of resistors.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例に係わる混成集積回路の一部を
示す第2図のI−I線部分の断面図、第2図は第1図の
混成集積回路を示す平面図、第3図は従来の混成集積回
路を示す断面図である。 11・・・基板 12・・・電極導体 13・・・電極導体 14・・・配線導体 15・・・絶縁体膜 16・・・クロスオーバーガラス膜 17・・・配線導体 18・・・抵抗体 19・・・保護ガラス
1 is a sectional view taken along the line II in FIG. 2 showing a part of a hybrid integrated circuit according to an embodiment of the present invention; FIG. 2 is a plan view showing the hybrid integrated circuit in FIG. 1; The figure is a sectional view showing a conventional hybrid integrated circuit. 11... Substrate 12... Electrode conductor 13... Electrode conductor 14... Wiring conductor 15... Insulator film 16... Crossover glass film 17... Wiring conductor 18... Resistor 19...protective glass

Claims (1)

【特許請求の範囲】[Claims] (1)絶縁基板(11)上の対の電極導体(12)(1
3)の相互間における少なくとも一部に絶縁体膜(15
)を形成し、次に、前記絶縁体膜(15)の少なくとも
一部を覆い且つ前記対の電極導体(12)(13)を相
互に接続するように膜抵抗体(18)を形成し、しかる
後、前記膜抵抗体(18)における前記絶縁体膜(15
)の上の領域をトリミングすることを特徴とする膜抵抗
の製造方法。
(1) Pair of electrode conductors (12) (1) on an insulating substrate (11)
3), an insulating film (15
), and then forming a film resistor (18) so as to cover at least a portion of the insulating film (15) and interconnect the pair of electrode conductors (12) and (13), After that, the insulator film (15) in the film resistor (18) is
) A method for manufacturing a film resistor, comprising trimming the area above the film.
JP62010786A 1987-01-19 1987-01-19 Manufacture of film resistor Pending JPS63177502A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62010786A JPS63177502A (en) 1987-01-19 1987-01-19 Manufacture of film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62010786A JPS63177502A (en) 1987-01-19 1987-01-19 Manufacture of film resistor

Publications (1)

Publication Number Publication Date
JPS63177502A true JPS63177502A (en) 1988-07-21

Family

ID=11760016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62010786A Pending JPS63177502A (en) 1987-01-19 1987-01-19 Manufacture of film resistor

Country Status (1)

Country Link
JP (1) JPS63177502A (en)

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