JPS63175859A - Exposure system for production of liquid crystal substrate - Google Patents

Exposure system for production of liquid crystal substrate

Info

Publication number
JPS63175859A
JPS63175859A JP62005900A JP590087A JPS63175859A JP S63175859 A JPS63175859 A JP S63175859A JP 62005900 A JP62005900 A JP 62005900A JP 590087 A JP590087 A JP 590087A JP S63175859 A JPS63175859 A JP S63175859A
Authority
JP
Japan
Prior art keywords
liquid crystal
crystal substrate
photomask
substrate material
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62005900A
Other languages
Japanese (ja)
Inventor
Kazuya Tanaka
一也 田中
Kaoru Matsumura
薫 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP62005900A priority Critical patent/JPS63175859A/en
Publication of JPS63175859A publication Critical patent/JPS63175859A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Projection-Type Copiers In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To facilitate the alignment work between a photomask and a liquid crystal substrate material by adopting a projection system as the exposure system for production of a liquid crystal substrate. CONSTITUTION:A photoresist layer is provided on a liquid crystal substrate material 10 consisting of a transparent or semitransparent plate-shaped member; and when the pattern of a photomask 7 is projected and its image is formed by a projection lens or the like to expose the liquid crystal substrate material 10, positions of an alignment mark preliminarily provided on the photomask 7 whose image is formed on the liquid crystal substrate material and an alignment mark provided on the liquid crystal substrate material 10 are observed from under the liquid crystal substrate material, and the position of the photomask or the running or carrying position of the liquid crystal substrate material is so determined that they have prescribed positional relations. Because of the projection system capable of reduction or expansion of the photomask, it is unnecessary to prepare photomasks having a very narrow line width or a large area and it is sufficient if photomasks having a line width easy to draw and a proper size are prepared, and therefore, the rise of the cost is suppressed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は液晶ディスプレイに利用される液晶基板の製作
工程における露光方式に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure method in the manufacturing process of a liquid crystal substrate used in a liquid crystal display.

〔従来技術とその問題点〕[Prior art and its problems]

液晶ディスプレイ用の液晶基板は大きさが大体多くは対
角50龍乃至350龍、厚み0.3關乃至1關程度のガ
ラス扱であり、電気回路的には、透明電極、ダイオード
、トランジスターもしくはそれらを結線する配線などが
設けられていて、その製作にあたってはrC装置と同様
、フォトマスクのパターンを何回か転写露光する工程を
含む。
Liquid crystal substrates for LCD displays are generally made of glass with a diagonal size of 50 to 350 mm and a thickness of 0.3 to 1 inch, and in terms of electrical circuits, transparent electrodes, diodes, transistors, or the like are used. Wiring and the like are provided to connect the two, and its manufacture includes the process of transferring and exposing the pattern of a photomask several times, similar to the rC device.

転写露光にあたっては従来は、フォトマスクと基板素材
との位置関係は、密着式もしくはプロキシミティ方式を
採用していること、ICC装置−は微細なイ!成ではな
いので上方からの観察で比較的フォトマスクと基板素材
とのアライメントは容易であったが、IC装置と同様に
、微細化が求められたり、またディスプレイの大面積化
が求められたりすると、以下の諸点において問題点が生
ずる。
Conventionally, for transfer exposure, the positional relationship between the photomask and the substrate material is either a contact type or a proximity type. However, as with IC devices, when miniaturization is required or a larger display area is required, it is relatively easy to align the photomask and substrate material by observing from above. , problems arise in the following points.

まず第一に、前述の通り等倍率を採る従来の密着方式及
びプロキシミティ方式においては、製作すべき液晶基板
のパターンの微細化に伴い、微細化に比例してフォトマ
スクのパターンも微細なものを用意しなければならず、
製作がしにくくてコスト上昇の原因となる。
First of all, as mentioned above, in the conventional contact method and proximity method that use the same magnification, as the pattern of the liquid crystal substrate to be manufactured becomes finer, the pattern of the photomask becomes finer in proportion to the finer pattern. must be prepared,
It is difficult to manufacture and causes an increase in costs.

第二に、液晶基板が大型化すると、等倍率を採る従来の
二つの方式においては、大型化に比例してフォトマスク
も大型のものを用意しなければならずコスト上昇の原因
となる。
Second, as the size of the liquid crystal substrate increases, in the two conventional methods that use the same magnification, a photomask must be made larger in proportion to the increase in size, which causes an increase in cost.

第三に、前述のプロキシミテイ方式は、フォトレジスト
層の設けられた面とフォトマスクとがいずれの場所にお
いても同一の間隙を有すること叩ち平行度が要求される
が、製作すべき液晶基板の大型化に伴い大型のフォトマ
スクを使用するようになると、フォトマスクの反りによ
り、どうしても平行度が悪くなる。その結果露光される
像が歪んだり、ひどい場合はフォトマスクとフォトレジ
ストとが接触し、フォトマスクが汚れたりキズがついた
りして、密着方式と同じように不良品を発生させる原因
となる。
Thirdly, the above-mentioned proximity method requires that the surface on which the photoresist layer is provided and the photomask have the same gap everywhere, and that striking parallelism is required, but the liquid crystal substrate to be manufactured is When a large photomask is used as the size of the photomask becomes larger, the parallelism inevitably deteriorates due to warping of the photomask. As a result, the exposed image may be distorted, or in severe cases, the photomask and photoresist may come into contact with each other, causing the photomask to become dirty or scratched, resulting in the production of defective products, as in the case of the contact method.

そこで本発明では、IC等の製作における露光方式と同
様に、プリント基板製作の露光方式においても投影方式
を採用することを検討した。なぜなら投影方式によるな
らば、製作すべき液晶基板のパターンが微細化もしくは
基板が大型化しても作りやすい寸法、大きさにフォトマ
スクを製作して、後は拡大露光したり、縮小露光したり
して所定の露光ができる長所があり、またフ第1・マス
クの反りによる像の歪みやフォトレジストとの接触によ
るフォトマスクの汚れ、キズの心配もなくなるからであ
る。
Therefore, in the present invention, we have considered adopting a projection method as an exposure method for manufacturing printed circuit boards, similar to the exposure method for manufacturing ICs and the like. This is because with the projection method, a photomask is manufactured to a size that is easy to manufacture even when the liquid crystal substrate pattern to be manufactured becomes finer or the substrate becomes larger, and then enlarged exposure or reduced exposure is performed. This has the advantage that a predetermined exposure can be carried out using the first mask, and there is no need to worry about distortion of the image due to warping of the first mask or staining or scratching of the photomask due to contact with the photoresist.

ところがアライメントは密着式もしくはプロキシミティ
方式のようには容易にはならないので、 ′このアライ
メント方法を考慮しながら投影方式を採用した。
However, alignment is not as easy as with the contact or proximity methods, so we adopted the projection method while taking this alignment method into consideration.

〔発明の目的〕[Purpose of the invention]

そこで本発明は、液晶基Fj、製作における露光方式に
おいて投影方式を採用するとともに、フォトマスクと基
板素材との位置関係の調節が容易な方式を提供すること
にある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method in which a projection method is adopted as an exposure method in manufacturing a liquid crystal substrate Fj, and the positional relationship between a photomask and a substrate material can be easily adjusted.

〔発明の構成とその作用〕[Structure of the invention and its effects]

かかる目的を達成するため本発明露光方式は、透明もし
くは半透明の板状部材からなる液晶基板素材にフォトレ
ジスト層を設け、フォトマスクのパターンを投影レンズ
等で投影結像して上記液晶基板素材を露光するにあたっ
て、 あらかじめ、液晶基板素材に結像したフォトマスクに設
けられたアライメントマークと液晶基板素材に設けられ
たアライメントマークとを、液晶基板素材の下方から相
互位置観察し、所定の位置関係になるように、フォトマ
スクの位置もしくは液晶基板素材の走行もしくは搬送位
置決めを実行する工程を含むことにある。
In order to achieve this object, the exposure method of the present invention provides a photoresist layer on a liquid crystal substrate material made of a transparent or semitransparent plate-like member, and projects and images the pattern of a photomask using a projection lens or the like to form the liquid crystal substrate material. Before exposing the liquid crystal substrate material, the alignment marks formed on the photomask and the alignment marks formed on the liquid crystal substrate material are observed in advance from below the liquid crystal substrate material, and the predetermined positional relationship is determined. The present invention includes a step of determining the position of the photomask or the movement or conveyance of the liquid crystal substrate material so that the position of the photomask or the liquid crystal substrate material is determined.

液晶基板の素材は透明もしくは半透明のものであるから
、投影光学系の配置される方向に観察系を配置して観察
しなくても、むしろ、投影光学系のない反対方向に観察
系を配置して観察した方が、装置としても設計製作が容
易だし、観察作業もしやすい。しかも前記の通り、素材
が透明もしくは半透明であるから観察そのものに影響が
生ずるわけではない。
Since the material of the liquid crystal substrate is transparent or semi-transparent, it is not necessary to place the observation system in the direction where the projection optical system is placed for observation, but rather to place the observation system in the opposite direction where the projection optical system is located. It is easier to design and manufacture the device, and it is easier to perform the observation work. Moreover, as mentioned above, since the material is transparent or translucent, the observation itself is not affected.

〔実施例〕〔Example〕

以下、本発明の実施例の一つについて図面に沿って説明
する。
One embodiment of the present invention will be described below with reference to the drawings.

第一図は、実施例を説明するための光学系の概略説明図
である。図において1はショートアーク型の超高圧水銀
灯例えば消rl電力500WのtlslI500D (
ウシオ電機株式会社!!り 、2は楕円集光!i23と
5は熱線カット用のコールドミラー、4はインテグレー
タレンズ、6は投影レンズ、7はフォトマスク、8は結
像レンズ、10は液晶基板素材材、9はミラー等の観察
手段である。11は人の目である。尚、液晶基板素材上
のレジスト膜は省略しであるが、感光露光波区が500
 nm以下のノボラック系ポジレジストが使用できる。
FIG. 1 is a schematic explanatory diagram of an optical system for explaining an embodiment. In the figure, 1 is a short-arc type ultra-high pressure mercury lamp, such as a TLSlI500D with an extinguisher power of 500W (
Ushio Inc.! ! ri, 2 is elliptical focusing! i23 and 5 are cold mirrors for cutting off heat rays, 4 is an integrator lens, 6 is a projection lens, 7 is a photomask, 8 is an imaging lens, 10 is a liquid crystal substrate material, and 9 is an observation means such as a mirror. 11 is the human eye. Although the resist film on the liquid crystal substrate material is omitted, the photosensitive exposure wave area is 500.
A novolac positive resist of nm or less can be used.

厚さは大体2μmぐらいで良い。インテグレータレンズ
4は露光面にほぼ均一な照度分布を得るために用いられ
る。
The thickness may be approximately 2 μm. The integrator lens 4 is used to obtain a substantially uniform illuminance distribution on the exposure surface.

コンデンサーレンズユニット6は結像レンズに適性に光
束を入射せしめるためのものであって、特に図に示した
構成に■られるわけではない。結像レンズ8は言うまで
もなくフォトマスクから出射された光を露光面に集光し
てフォトマスクのパターンの像を結像させるためのもの
であり、搬送される液晶基板素材の露光面に該レンズの
焦点が位置するように配置される。
The condenser lens unit 6 is for appropriately allowing a beam of light to enter the imaging lens, and is not limited to the configuration shown in the figure. Needless to say, the imaging lens 8 is for condensing the light emitted from the photomask onto the exposure surface to form an image of the pattern of the photomask. is placed so that the focal point of the image is located.

寸法例を示すと、フォトマスクの被照明部分の大きさは
114mmX53mm、基板素材−コマの大きさは57
mm X 26.5mmである。従って、倍率約2分の
1倍の縮小露光であり、投影されるパターンの線幅は2
0μm程度である。
To give an example of dimensions, the size of the illuminated part of the photomask is 114 mm x 53 mm, and the size of the board material - frame is 57 mm.
It is mm x 26.5mm. Therefore, it is a reduction exposure with a magnification of about 1/2, and the line width of the projected pattern is 2
It is about 0 μm.

ところで、アライメントマークの観察系としては、第一
図ではミラー9を示しであるが実際には対物レンズと接
眼レンズを具えた顕微鏡を利用するのが良く、更に対物
レンズの焦点距離が小さい場合は、途中に結像レンズを
挿入する。これらの観察系は、前記の通り、投↓光学系
のない反対側に設けるものであるから、装置としての設
計製作が容易なばかりでなく、観察作業も楽である。位
置合せは、フォトマスクの方の位置を調節しても良いし
、フォトマスクを一定の位置に決めておいて、液晶基板
素材の走行位置もしくは搬送位置が所定の一定の位置に
なるように走行もしくは搬送系(図示せず)を調整して
も良い。
By the way, as an observation system for the alignment mark, mirror 9 is shown in Figure 1, but in reality it is better to use a microscope equipped with an objective lens and an eyepiece, and if the focal length of the objective lens is small, , insert an imaging lens in the middle. As described above, since these observation systems are provided on the opposite side from where the projection optical system is located, not only is the device easy to design and manufacture, but also the observation work is easy. Alignment can be done by adjusting the position of the photomask, or by setting the photomask at a fixed position and moving the liquid crystal substrate material so that the running or transporting position is at a predetermined fixed position. Alternatively, the conveyance system (not shown) may be adjusted.

〔発明の効果〕〔Effect of the invention〕

以上説明してきた実施例からも理解できるとうり、本発
明は、液晶基板製作における露光方式として投影方式を
採用した場合、フォトマスクと液晶基板素材とのアライ
メント作業が容易になり、しかも、フォトマスクとして
は、縮小もしくは拡大できる投影方式によるため、?I
Imな線幅のフォトマスクや大面積のフォトマスクを用
意することが不要となり、作り易い線幅のフォトマスク
や適度の大きさのフォトマスクを作れば良いがらコスト
の上昇が抑制される他、またフォトマスクとフォトレジ
ストの接触によるフォトマスクの汚れやキズ及びフォト
マスクの反りによる像の歪みの心配もな(なる。
As can be understood from the embodiments described above, the present invention allows for easy alignment of the photomask and the liquid crystal substrate material when a projection method is adopted as the exposure method in manufacturing the liquid crystal substrate, Because it uses a projection method that can be reduced or enlarged? I
It is no longer necessary to prepare a photomask with a large line width or a photomask with a large area, and while it is sufficient to make a photomask with an easy-to-make line width or a photomask with an appropriate size, cost increases are suppressed. There is also no need to worry about stains or scratches on the photomask due to contact between the photomask and photoresist, or distortion of the image due to warping of the photomask.

【図面の簡単な説明】[Brief explanation of the drawing]

第一図は本発明を実行するための光学系の実施例の一つ
についての説明図である。 図において、1は超高圧水銀灯、2は楕円集光鏡、3と
5はコールドミラー、4はインチグレーターレンズ、6
は投影レンズ、7はフォトマスク8は結像レンズ、9は
ミラー、10は液晶基板素材を示す。 弔−■
FIG. 1 is an explanatory diagram of one embodiment of an optical system for implementing the present invention. In the figure, 1 is an ultra-high pressure mercury lamp, 2 is an elliptical condenser, 3 and 5 are cold mirrors, 4 is an inch greater lens, and 6
7 is a projection lens, 7 is a photomask 8 is an imaging lens, 9 is a mirror, and 10 is a liquid crystal substrate material. Condolence-■

Claims (1)

【特許請求の範囲】 透明もしくは半透明の板状部材からなる液晶基板素材に
フォトレジスト層を設け、フォトマスクのパターンを投
影レンズ等で投影結像して上記液晶基板素材を露光する
にあたって、 あらかじめ、液晶基板素材に結像したフォトマスクに設
けられたアライメントマークと液晶基板素材に設けられ
たアライメントマークとを、液晶基板素材の下方から相
互位置観察し、所定の位置関係になるように、フォトマ
スクの位置もしくは液晶基板素材の走行もしくは搬送位
置決めを実行することを特徴とする液晶基板製作の露光
方式。
[Claims] A photoresist layer is provided on a liquid crystal substrate material made of a transparent or translucent plate-like member, and the pattern of the photomask is projected and imaged with a projection lens etc. to expose the liquid crystal substrate material in advance. The mutual positions of the alignment marks formed on the photomask and the alignment marks formed on the liquid crystal substrate material, which are imaged on the liquid crystal substrate material, are observed from below the liquid crystal substrate material. An exposure method for producing a liquid crystal substrate, which is characterized by determining the position of a mask or the movement or transport of a liquid crystal substrate material.
JP62005900A 1987-01-16 1987-01-16 Exposure system for production of liquid crystal substrate Pending JPS63175859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62005900A JPS63175859A (en) 1987-01-16 1987-01-16 Exposure system for production of liquid crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62005900A JPS63175859A (en) 1987-01-16 1987-01-16 Exposure system for production of liquid crystal substrate

Publications (1)

Publication Number Publication Date
JPS63175859A true JPS63175859A (en) 1988-07-20

Family

ID=11623767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62005900A Pending JPS63175859A (en) 1987-01-16 1987-01-16 Exposure system for production of liquid crystal substrate

Country Status (1)

Country Link
JP (1) JPS63175859A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120180A (en) * 1975-04-15 1976-10-21 Nippon Telegr & Teleph Corp <Ntt> Pattern printing device
JPS56111225A (en) * 1980-02-01 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai X ray exposuring device
JPS57147624A (en) * 1981-03-09 1982-09-11 Canon Inc Contact exposure device
JPS59113426A (en) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd Exposing device for long-sized plate
JPS61242021A (en) * 1985-04-19 1986-10-28 Canon Inc Exposing device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120180A (en) * 1975-04-15 1976-10-21 Nippon Telegr & Teleph Corp <Ntt> Pattern printing device
JPS56111225A (en) * 1980-02-01 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai X ray exposuring device
JPS57147624A (en) * 1981-03-09 1982-09-11 Canon Inc Contact exposure device
JPS59113426A (en) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd Exposing device for long-sized plate
JPS61242021A (en) * 1985-04-19 1986-10-28 Canon Inc Exposing device

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