JPS6127548A - Non-contact type exposing device - Google Patents

Non-contact type exposing device

Info

Publication number
JPS6127548A
JPS6127548A JP14810584A JP14810584A JPS6127548A JP S6127548 A JPS6127548 A JP S6127548A JP 14810584 A JP14810584 A JP 14810584A JP 14810584 A JP14810584 A JP 14810584A JP S6127548 A JPS6127548 A JP S6127548A
Authority
JP
Japan
Prior art keywords
master mask
copying
substrate
image
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14810584A
Other languages
Japanese (ja)
Inventor
Koichi Yoshihara
光一 吉原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP14810584A priority Critical patent/JPS6127548A/en
Publication of JPS6127548A publication Critical patent/JPS6127548A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent a master mask from being damaged, by using a fiber lens system having an image forming characteristic of one to one, and exposing a master mask pattern onto a substrate for copying having a resist layer, without contacting to said pattern. CONSTITUTION:A light from a mercury lamp 21 is reflected 22, passes through a shutter 23, forms an image on a diffusion plate 24, equalized, and becomes parallel lights. The parallel light flux irradiates a master mask 26, and forms the master mask 26 by one to one on a copying substrate 28 by many fiber lens arrays 27. An erect image of the same size as a master mask pattern is formed on the copying substrate. In such a way, by a simple device, copying is executed by non-contact, the master mask 26 is protected from a damage, and copying of a large-sized mask can also be executed easily.

Description

【発明の詳細な説明】 本発明は非接触式露光装置にかかり、半導体集積回路の
製造工程中に用いられるフォトマスクの露光装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a non-contact type exposure apparatus, and relates to a photomask exposure apparatus used during the manufacturing process of semiconductor integrated circuits.

一般に、半導体集積回路の製造における写真蝕刻工程で
使用される選択露光用フォトマスクには、金属クロム、
酸化クロム、酸化鉄、シリコン酸化物等を使用したメタ
ルマスクと、ハロゲン化銀化金物を使用したエマルジ謬
ンマスクとがある。これらのマスクを製造するための一
方法として、１枚のマスターマスクから複数枚のコピー
マ侵りを得る露光方式がおる。この方式に用いられる露
光装置としては、現在マスターマスクとコピー用基板（
透明基板上に前記金属よりなる遮光膜を設け、その上に
フォトレジストを塗布したもの、または透明基板上にハ
ロゲン化銀化合物を塗布したもの）とを主面同志密着さ
せて露光するコンタクト露光装置が一般的である。しか
しこのコンタクト露光装置においては、マスクパターン
端からの光の回り込みによる解像力低下を防ぐことを目
的に、マスターマスクとコピー用基板とを強く密着させ
る必要がわる。この過密着のため、マスターマスクとコ
ピー用基板との引き離しか困難になりたり、引き離し時
二枚の基板間に発生する静電気の放電によりマスターマ
スクを損傷する等の欠点があった。加えて、現在主に用
いられるポジレジスト祉物理的衝撃に弱いという劣性を
有しており、マスターマスクにポジレジストを塗布した
コピー用基板を密着させる時、あるいは露光後引き離す
時に、このレジスト膜に部分的剥離が生じ、結果として
“完成したフォトマスクが不良となる等の欠点も一有し
ている。これらの欠点をカバーする露光方式として、非
接触式のプロジェクシ冒ン露光装置を用いる気運がある
。しかしこの露光装置は、詳しくは後述するが、光学系
が複雑であり、結果として装置が大型、高価格になると
いう致命的欠点を有し、それ故現在まで確固たる地位を
築くに至っていない。In general, selective exposure photomasks used in the photolithography process in the manufacture of semiconductor integrated circuits include metallic chromium,
There are metal masks using chromium oxide, iron oxide, silicon oxide, etc., and emulsion masks using silver halide metals. One method for manufacturing these masks is an exposure method in which a plurality of copies are stained from one master mask. The exposure equipment used in this method currently consists of a master mask and a copying substrate (
A contact exposure device that exposes a transparent substrate with a light-shielding film made of the metal mentioned above and a photoresist coated thereon, or a transparent substrate coated with a silver halide compound while bringing the main surfaces into close contact with each other. is common. However, in this contact exposure apparatus, the master mask and the copying substrate must be brought into close contact with each other in order to prevent a decrease in resolution due to the wraparound of light from the edges of the mask pattern. Due to this excessive adhesion, it becomes difficult to separate the master mask from the copying substrate, and the master mask is damaged by electrostatic discharge generated between the two substrates when the two substrates are separated. In addition, the currently mainly used positive resist has the disadvantage of being weak against physical shock, and when a copying substrate coated with positive resist is brought into close contact with the master mask, or when it is separated after exposure, this resist film may be damaged. It also has some drawbacks, such as partial peeling, resulting in a defective finished photomask.There is a growing trend to use non-contact projection exposure equipment as an exposure method to overcome these drawbacks. However, as will be explained in detail later, this exposure device has the fatal drawback of having a complicated optical system, resulting in a large and expensive device. not present.

本発明は、前述した装置の不都合点に鑑みてなされたも
のであり、その目的とするところは、コンパクトかつ低
コストという利点を有し、しかも前述したコンタクト露
光装置の欠点を解決した露光装置を提供することにある
。The present invention has been made in view of the disadvantages of the above-mentioned apparatus, and its purpose is to provide an exposure apparatus which has the advantages of being compact and low-cost, and which solves the disadvantages of the above-mentioned contact exposure apparatus. It is about providing.

すなわち本発明は、その光学系内に１対１結像特性を持
つファイバーレンズ系を有し、マスターマスクパターン
を密着させることなおレジスト層を有するコピー用基板
上に露光結像することを特徴とする非接触式露光装置に
関するものである。That is, the present invention is characterized in that the optical system includes a fiber lens system having a one-to-one imaging characteristic, and the master mask pattern is brought into close contact with the copying substrate to form an exposed image on a copying substrate having a resist layer. The present invention relates to a non-contact exposure apparatus.

以下本発明を図面を用いて詳細に説明する。The present invention will be explained in detail below using the drawings.

第１図は、コンタクト露光装置の欠点をカバーすること
を目的とした従来のプロジェク’／ｗｘン露光装置の光
学系である。FIG. 1 shows an optical system of a conventional projector'/wxn exposure apparatus intended to overcome the shortcomings of contact exposure apparatuses.

図において、水銀ランプ１より発した光は、球面鏡２に
て集光され、球面鏡３、反射ミラー４、スリット５、反
射ミラー６、球面！ｉｆ！７、反射ミラー８、シャッタ
ー９、反射ミラー１０、球面鏡１１等よりなる第１の光
学系を介し、マスターマスク１２を照射する。続いてこ
のマスターマスク像を台形ミラー１３、凹面＠１４、凸
面鏡１５等よりなる第２の光学系を用いて、コピー用基
板１６上に投影、露光する。図より明らかな様に、この
装置は複雑な光学系及び光路を有することＫな抄、光の
エネルギー損失も大きい。結果として大型の筐体が必要
となり、高価格となる。In the figure, light emitted from a mercury lamp 1 is condensed by a spherical mirror 2, which includes a spherical mirror 3, a reflecting mirror 4, a slit 5, a reflecting mirror 6, and a spherical! If! 7. The master mask 12 is irradiated through a first optical system including a reflecting mirror 8, a shutter 9, a reflecting mirror 10, a spherical mirror 11, and the like. Subsequently, this master mask image is projected and exposed onto a copy substrate 16 using a second optical system comprising a trapezoidal mirror 13, a concave mirror 14, a convex mirror 15, and the like. As is clear from the figure, this device has a complicated optical system and optical path, and the loss of light energy is large. As a result, a large casing is required, resulting in a high price.

第２図は、本発明による非接触式露光装置の一実施例で
おる。図において、水銀ランプ２１より発せられた元は
凹面ｆ！ＩＭ２２によりシャッター２３を介して拡散板
２４上に集光される。ここで均一にされた光はコリメー
ク１ンレンズ２５により集光され、平行光束となる。こ
の平行光束によりマスターマスク２６を照明し、このマ
スターマスク像を１対１の結像特性を有する７アイノ（
−レンズ光学系であるファイバーレンズアレイ２７を介
して、コピー用基板２８上に結像する。コピー用基板上
に得られるパターン像は、マスターマスクツくターンと
同寸法を有する正立像となる。FIG. 2 shows an embodiment of a non-contact type exposure apparatus according to the present invention. In the figure, the source emitted from the mercury lamp 21 is a concave surface f! The light is focused by the IM 22 onto the diffuser plate 24 via the shutter 23. The light made uniform here is condensed by a collimating lens 25 and becomes a parallel light beam. The master mask 26 is illuminated by this parallel light flux, and the master mask image is formed into a 7-eye ino (
- An image is formed on the copying substrate 28 via the fiber lens array 27 which is a lens optical system. The pattern image obtained on the copying substrate is an erect image having the same dimensions as the master mask turns.

図に示した様に光学系は非常に単純でちゃ、光路も短い
ため光のエネルギー損失も小さい。As shown in the figure, the optical system is very simple, and the optical path is short, so the loss of light energy is small.

以上述べたように１本発明による非接触式露光装置ハ、
ファバーレンズによる結像方式を用イルため、従来のコ
ンタクト露光装置で問題となっている過密着等に原因す
るマスターマスク破損、コピー用基板上のレジスト剥離
等の欠点を解決し、加えてプロジェクシ冒ン露光装置の
大型、高価格という欠点をもカバーし、結果としてマス
ターマスクの長寿命化、製作されるコピーマスクの大巾
な品質向上に貢献できるという点で画期的である。As described above, (1) the non-contact exposure apparatus according to the present invention;
Since it uses an imaging method using a fiber lens, it solves the problems of conventional contact exposure equipment, such as damage to the master mask caused by over-adhesion and peeling off of the resist on the copying substrate. This is revolutionary in that it overcomes the shortcomings of conventional exposure equipment, such as its large size and high price, and contributes to extending the life of the master mask and significantly improving the quality of the copy masks produced.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、従来の典屋的なプロジエクシ叢ン露光装置の
光学系の概略図である。第２図は、本発明の一実施例で
ある露光装置の光学系を示す概略図である。 図において、 １・・・・・・水銀ランプ、２・・・・・・球面鏡、３
・・・・・・球面鏡、４・・・・・・反射ミラー、５・
・・・・・スリット、６・・・・・・反射ミラー、７・
・・・・・球面鏡、８・・・・・・反射ミラー、９・・
・・・・シャッター、１０・・・・・・反射ミラー、１
１・・・・・・球面鏡、１２・・・・・・マスターマス
ク、１３・・・・・・台形ミラー、１４・・・・・・凹
面鏡、１５・・・・・・凸面鏡、１６・・・・・・コピ
ー用基板、２１・・・・・・水銀ランプ、２２°°“・
・・凹面鏡、２３・・・・・・シャッター、２４・・・
・・・ｍ散板、２ｓ・−・・・コリメーションレンズ、
２６・・・・・・育スターマス／、２７・・・・・・フ
ァイバーレンズアレイ、２８・−・・・コピー用基板。 第１図 −：’１７１−FIG. 1 is a schematic diagram of the optical system of a conventional professional exposure system. FIG. 2 is a schematic diagram showing an optical system of an exposure apparatus that is an embodiment of the present invention. In the figure, 1...mercury lamp, 2...spherical mirror, 3
... Spherical mirror, 4 ... Reflection mirror, 5.
...Slit, 6...Reflection mirror, 7.
... Spherical mirror, 8 ... Reflection mirror, 9 ...
...Shutter, 10...Reflection mirror, 1
1... Spherical mirror, 12... Master mask, 13... Trapezoidal mirror, 14... Concave mirror, 15... Convex mirror, 16... ...Copy board, 21...Mercury lamp, 22°°"・
... Concave mirror, 23 ... Shutter, 24 ...
... m scattering plate, 2s --- collimation lens,
26...Iku star mass/, 27...Fiber lens array, 28...Copy substrate. Figure 1-:'171-

Claims (1)

【特許請求の範囲】[Claims] 　その光学系内に１対１結像特性を持つファイバーレン
ズ系を有し、マスターマスクパターンを密着させること
なくレジスト層を有するコピー用基板上に露光結像する
ことを特徴とする非接触式露光装置。Non-contact exposure characterized by having a fiber lens system with a one-to-one imaging characteristic in its optical system, and forming an exposure image on a copying substrate having a resist layer without bringing the master mask pattern into close contact with it. Device.
JP14810584A 1984-07-17 1984-07-17 Non-contact type exposing device Pending JPS6127548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14810584A JPS6127548A (en) 1984-07-17 1984-07-17 Non-contact type exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14810584A JPS6127548A (en) 1984-07-17 1984-07-17 Non-contact type exposing device

Publications (1)

Publication Number Publication Date
JPS6127548A true JPS6127548A (en) 1986-02-07

Family

ID=15445353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14810584A Pending JPS6127548A (en) 1984-07-17 1984-07-17 Non-contact type exposing device

Country Status (1)

Country Link
JP (1) JPS6127548A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271355A (en) * 1991-02-27 1992-09-28 Ii & S:Kk Feature aligner
JPH05870U (en) * 1991-06-25 1993-01-08 皓耀 施 Lock device
EP0670052A1 (en) * 1992-11-17 1995-09-06 Lithography Inc. Hugle Lens array photolithography

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271355A (en) * 1991-02-27 1992-09-28 Ii & S:Kk Feature aligner
JPH05870U (en) * 1991-06-25 1993-01-08 皓耀 施 Lock device
EP0670052A1 (en) * 1992-11-17 1995-09-06 Lithography Inc. Hugle Lens array photolithography
EP0670052A4 (en) * 1992-11-17 1995-10-25 Brook John Lens array photolithography.

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