JPS63168034A - 半導体装置の多層ゲ−ト電極の形成方法 - Google Patents

半導体装置の多層ゲ−ト電極の形成方法

Info

Publication number
JPS63168034A
JPS63168034A JP61315407A JP31540786A JPS63168034A JP S63168034 A JPS63168034 A JP S63168034A JP 61315407 A JP61315407 A JP 61315407A JP 31540786 A JP31540786 A JP 31540786A JP S63168034 A JPS63168034 A JP S63168034A
Authority
JP
Japan
Prior art keywords
film
polysilicon
electrode
gate electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61315407A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376033B2 (enExample
Inventor
Tadanori Hosokawa
直範 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61315407A priority Critical patent/JPS63168034A/ja
Publication of JPS63168034A publication Critical patent/JPS63168034A/ja
Publication of JPH0376033B2 publication Critical patent/JPH0376033B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP61315407A 1986-12-27 1986-12-27 半導体装置の多層ゲ−ト電極の形成方法 Granted JPS63168034A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61315407A JPS63168034A (ja) 1986-12-27 1986-12-27 半導体装置の多層ゲ−ト電極の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61315407A JPS63168034A (ja) 1986-12-27 1986-12-27 半導体装置の多層ゲ−ト電極の形成方法

Publications (2)

Publication Number Publication Date
JPS63168034A true JPS63168034A (ja) 1988-07-12
JPH0376033B2 JPH0376033B2 (enExample) 1991-12-04

Family

ID=18065013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61315407A Granted JPS63168034A (ja) 1986-12-27 1986-12-27 半導体装置の多層ゲ−ト電極の形成方法

Country Status (1)

Country Link
JP (1) JPS63168034A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185860A (ja) * 1989-12-15 1991-08-13 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US5208170A (en) * 1991-09-18 1993-05-04 International Business Machines Corporation Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing
US6018181A (en) * 1990-10-12 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185860A (ja) * 1989-12-15 1991-08-13 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US6018181A (en) * 1990-10-12 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and manufacturing method thereof
US5208170A (en) * 1991-09-18 1993-05-04 International Business Machines Corporation Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing

Also Published As

Publication number Publication date
JPH0376033B2 (enExample) 1991-12-04

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