JPS63164482A - Light emitting diode device - Google Patents
Light emitting diode deviceInfo
- Publication number
- JPS63164482A JPS63164482A JP61313967A JP31396786A JPS63164482A JP S63164482 A JPS63164482 A JP S63164482A JP 61313967 A JP61313967 A JP 61313967A JP 31396786 A JP31396786 A JP 31396786A JP S63164482 A JPS63164482 A JP S63164482A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- light
- conductive
- diode device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000853 adhesive Substances 0.000 claims abstract description 5
- 230000001070 adhesive effect Effects 0.000 claims abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、多数の発光ダイオードチップを光源として有
する発光ダイオード装置に関し、特に表示用、照明具、
光通信用等として好適な発光ダイオード装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light emitting diode device having a large number of light emitting diode chips as a light source, and in particular to a light emitting diode device having a large number of light emitting diode chips as a light source.
The present invention relates to a light emitting diode device suitable for optical communication and the like.
従来のフィラメントランプと比較して発光ダイオードは
、消費電力が少ない、断線の問題がない、軽量小型であ
る、半導体の選択により所望の波長の光を発光させるこ
とが可能である、などの長所を有するために、最近、こ
れを表示用、照明具、光通信用等など各種の方面に利用
する検討が積極的に行われている。Compared to conventional filament lamps, light emitting diodes have advantages such as low power consumption, no problem with disconnection, light weight and small size, and the ability to emit light at a desired wavelength by selecting a semiconductor. Recently, studies have been actively conducted to utilize this for various purposes such as display, lighting, optical communication, etc.
ところで発光ダイオードを上記した用途に使用するとき
、多（の場合において基板上に多数の発光ダイオードを
配列設置し、ついで各発光ダイオード表面のｐ電極とｐ
側す−ドとをワイヤボンディングする必要があるが、多
数の発光ダイオードを用いた’２７１においてはこのワ
イヤボンディング作業に長時間を要するだけでなく、各
発光ダイオードの隣接間隅が極めて狭い場合には電気的
に安定したワイヤボンディングを高能率で達成すること
が頗る困難となる。By the way, when using light-emitting diodes for the above-mentioned purposes, a large number of light-emitting diodes are arranged and arranged on a substrate, and then a p-electrode and a p-electrode on the surface of each light-emitting diode are arranged.
It is necessary to perform wire bonding between the side panels, but in the '271 model that uses a large number of light emitting diodes, this wire bonding process not only takes a long time, but also requires a long time when the corners between adjacent light emitting diodes are extremely narrow. This makes it extremely difficult to achieve electrically stable wire bonding with high efficiency.
上記の事情から、基板上に配列設置した多数の発光ダイ
オードの各ｐ電極とｐ側す−ドとを電気的に安定してし
かも高能率で結合する技術の開発が強く要求されている
。In view of the above circumstances, there is a strong demand for the development of a technique for electrically stably and highly efficiently coupling each p-electrode of a large number of light-emitting diodes arranged on a substrate to the p-side electrode.
本発明は、上記の問題点を解決するための手段を提案す
ることを目的とするものである。The present invention aims to propose means for solving the above problems.
即ち本発明は、多数の発光ダイオードチップを配列設置
した基板の上に、導電路を有する光透過性フィルムを被
せて上記の導電路により少なくとも一部の発光ダイオー
ドチップの各表面に設けられた電極間を電気的に結合し
てなることを特徴とする発光ダイオード装置に関するも
のである。That is, the present invention covers a substrate on which a large number of light-emitting diode chips are arranged and arranged, and a light-transmitting film having conductive paths, and electrodes provided on each surface of at least some of the light-emitting diode chips by the conductive paths. The present invention relates to a light emitting diode device characterized in that the light emitting diode device is electrically coupled between the light emitting diode device and the light emitting diode device.
第１図は本発明の実施例を組み立てる前の部品へと部品
Ｂとの斜視図であり、第２図は部品Ａと部品Ｂとを組み
立て得た実施例の第１図Ｘ−Ｘ部分における断面図であ
る。FIG. 1 is a perspective view of parts B before assembling the embodiment of the present invention, and FIG. FIG.
第１図〜第２図において、部品Ｂはガラス−エポキシ、
セラミック等の絶縁材料のみからなる、あるいはかかる
絶縁材料層の下面にヒートシンクを貼着した構造の基板
ｌ、基板ｌ上に形成されたニッケル、銅、金などの導電
性金属の導電パターン２、並びにｎ側電極３１、活性領
域を含む半導体材料部３２、およびｐ側電極３３とから
なる発光ダイオードチップ３とからなり、部品Ａはポリ
カーボネート樹脂、アクリル樹脂、エポキシ樹脂等の光
透過性の優れた有機高分子フィルム４、光ｉ３過性フィ
ルム４の片面に形成されたニッケル、銅、金などの導電
性金属からなる多数の導電パターン５とからなる。In Figures 1 and 2, part B is glass-epoxy,
A substrate 1 made of only an insulating material such as ceramic or having a structure in which a heat sink is attached to the lower surface of the insulating material layer, a conductive pattern 2 formed on the substrate 1 of a conductive metal such as nickel, copper, or gold, and It consists of a light emitting diode chip 3 consisting of an n-side electrode 31, a semiconductor material part 32 including an active region, and a p-side electrode 33, and component A is made of an organic material with excellent light transmittance such as polycarbonate resin, acrylic resin, or epoxy resin. It consists of a polymer film 4 and a large number of conductive patterns 5 made of a conductive metal such as nickel, copper, or gold formed on one side of the photo-i3-transparent film 4.
本発明の発光ダイオード装置は、部品Ａの導電パターン
５と発光ダイオードチップ３のｐ側電極３３との間に導
電性接着剤を介在させた状態で部品Ｂの上に部品Ａを重
ねて導電パターン５とｐ側電極３３とを接着するこによ
り製造することができる。In the light emitting diode device of the present invention, component A is stacked on component B with a conductive adhesive interposed between the conductive pattern 5 of component A and the p-side electrode 33 of the light emitting diode chip 3. 5 and the p-side electrode 33.
１基板１上の導電パターン２とｎ側電極３１、および光
透過性フィルム４上の導電パターン５とｐ側電極３３は
、いずれも導電性接着剤（図示せず）により良好な導電
状態にて接着されているので、多数の発光ダイオードチ
ップ３の各ｐ＠電極３３同士は導電パターン５を介して
電気的に結合された状態となっている。1 The conductive pattern 2 and n-side electrode 31 on the substrate 1, and the conductive pattern 5 and p-side electrode 33 on the light-transmitting film 4 are all in a good conductive state with a conductive adhesive (not shown). Since they are bonded together, the p@ electrodes 33 of a large number of light emitting diode chips 3 are electrically coupled to each other via the conductive patterns 5.
基板ｌ上の導電パターン２や光透過性フィルム４上の導
電パターン５等は、たとえばりソグラフィを用いた公知
の方法により所望の形状のものに形成することができる
。なお部品Ａとしては、光透過性フィルム４上に導電性
金属の細線を貼着したものであってもよい。The conductive pattern 2 on the substrate l, the conductive pattern 5 on the light-transmitting film 4, etc. can be formed into desired shapes by a known method using, for example, lithography. Note that the component A may be one in which a thin conductive metal wire is adhered onto the light-transmitting film 4.
本発明においては、基板１上における発光ダイオードチ
ップの数、その配列方法は自由であり、また発光ダイオ
ードチップの配列に応じて光透過性フィルム４の片面に
導電パターン５を形成して得た部品Ａを用いることによ
り、発光ダイオードチップの全部を、あるいは適当にグ
ループ分けした各グループ内を一括して電気的に結合す
ることができる。したがって、個々の発光ダイオードチ
ップ毎のワイヤボンディングが不要となる。また更に、
基板１上の導電パターン２を変えることにより、多数の
発光ダイオードチップのそれぞれを個々に、グループ別
に、あるいはその他の種々の方法により発光稼動させる
ことができる。In the present invention, the number of light emitting diode chips on the substrate 1 and the arrangement method thereof are free, and the parts obtained by forming the conductive pattern 5 on one side of the light transmitting film 4 according to the arrangement of the light emitting diode chips. By using A, all of the light emitting diode chips or each appropriately divided group can be electrically coupled together. Therefore, wire bonding for each individual light emitting diode chip becomes unnecessary. Furthermore,
By changing the conductive pattern 2 on the substrate 1, each of the plurality of light emitting diode chips can be activated to emit light individually, in groups, or in various other ways.
本発明の発光ダイオード装置は、表示用、照明具、光通
信用等として好適である。また基板１と光透過性フィル
ム４との何れか一方または両方が剛直性であると、剛直
性の装置が得られ、反対に上記双方とも可撓性の材料と
すると、可撓性の装置が得られる。可撓性の装置の場合
は、自動車のフロントガラス等任意の曲面上に貼着して
使用し得る利点がある。The light emitting diode device of the present invention is suitable for display, illumination, optical communication, etc. Furthermore, if either or both of the substrate 1 and the light-transmitting film 4 are rigid, a rigid device can be obtained, whereas if both of the above are made of flexible materials, a flexible device can be obtained. can get. A flexible device has the advantage that it can be used by being attached to any curved surface such as the windshield of an automobile.
第１図は本発明の実施例を組み立てる前の部品Ａと部品
Ｂとの斜視図であり、第２図は部品Ａと部品Ｂとを組み
立て得た実施例の第１図Ｘ−Ｘ部分における断面図であ
る。
１ 基板
２ Ｒ電パターン
３ 発光ダイオードチップ
３１ 発光ダイオードチップのｎ側電極３２ 活性
領域を含む発光ダイオードチップの半導体材料部
３３ 発光ダイオードチップのｐ側電極４ 光透
過性フィルム
５ 導電パターン
第１ｒ５！Ｊ
第２図FIG. 1 is a perspective view of parts A and B before assembling the embodiment of the present invention, and FIG. 2 is a perspective view of the embodiment in which parts A and B can be assembled at the section XX in FIG. 1. FIG. 1 Substrate 2 R-electrode pattern 3 Light-emitting diode chip 31 N-side electrode of the light-emitting diode chip 32 Semiconductor material portion of the light-emitting diode chip including the active region 33 P-side electrode of the light-emitting diode chip 4 Light-transparent film 5 Conductive pattern 1st r5! J Figure 2
Claims (5)
の上に、導電路を有する光透過性フィルムを被せて上記
の導電路により少なくとも一部の発光ダイオードチップ
の各表面に設けられた電極間を電気的に結合してなるこ
とを特徴とする発光ダイオード装置。(1) A light-transmissive film having a conductive path is placed on a substrate on which a large number of light emitting diode chips are arranged, and the conductive path connects between the electrodes provided on each surface of at least some of the light emitting diode chips. A light emitting diode device characterized by being electrically coupled.
ーンである特許請求の範囲第（１）項記載の発光ダイオ
ード装置。(2) The light emitting diode device according to claim (1), wherein the conductive path is a conductive pattern formed on a light-transmissive film.
ある特許請求の範囲第（１）項記載の発光ダイオード装
置。(3) The light emitting diode device according to claim (1), wherein the conductive path is a conductive wire adhered to a light-transmitting film.
導電パターンを有する基板上の所定位置に導電性接着剤
を用いて接着配列されてなる特許請求の範囲第（１）項
記載の発光ダイオード装置。(4) The light emitting diode device according to claim (1), wherein a large number of light emitting diode chips are adhesively arranged in predetermined positions on a substrate having a conductive pattern on its surface using a conductive adhesive.
互いに個別に発光作動する回路構成としてなる特許請求
の範囲第（１）項又は第（２）項記載の発光ダイオード
装置。(5) The light emitting diode device according to claim (1) or (2), in which some or all of the plurality of light emitting diode chips have a circuit configuration that individually operates to emit light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61313967A JPS63164482A (en) | 1986-12-26 | 1986-12-26 | Light emitting diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61313967A JPS63164482A (en) | 1986-12-26 | 1986-12-26 | Light emitting diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63164482A true JPS63164482A (en) | 1988-07-07 |
Family
ID=18047638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61313967A Pending JPS63164482A (en) | 1986-12-26 | 1986-12-26 | Light emitting diode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63164482A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0317656U (en) * | 1989-06-30 | 1991-02-21 | ||
| JP2004172578A (en) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| US7078737B2 (en) | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
| WO2007023411A1 (en) | 2005-08-24 | 2007-03-01 | Philips Intellectual Property & Standards Gmbh | Light emitting diodes and lasers diodes with color converters |
| EP2571069A3 (en) * | 2011-09-15 | 2013-11-06 | Lextar Electronics Corp. | Package structure of semiconductor light emitting element |
-
1986
- 1986-12-26 JP JP61313967A patent/JPS63164482A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0317656U (en) * | 1989-06-30 | 1991-02-21 | ||
| JP2004172578A (en) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| US7078737B2 (en) | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
| WO2007023411A1 (en) | 2005-08-24 | 2007-03-01 | Philips Intellectual Property & Standards Gmbh | Light emitting diodes and lasers diodes with color converters |
| US7863642B2 (en) | 2005-08-24 | 2011-01-04 | Koninklijke Philips Electronics N.V. | Light emitting diodes and lasers diodes with color converters |
| EP2571069A3 (en) * | 2011-09-15 | 2013-11-06 | Lextar Electronics Corp. | Package structure of semiconductor light emitting element |
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