JPS63163289A - High frequency characteristic measuring instrument for semiconductor device - Google Patents
High frequency characteristic measuring instrument for semiconductor deviceInfo
- Publication number
- JPS63163289A JPS63163289A JP30964086A JP30964086A JPS63163289A JP S63163289 A JPS63163289 A JP S63163289A JP 30964086 A JP30964086 A JP 30964086A JP 30964086 A JP30964086 A JP 30964086A JP S63163289 A JPS63163289 A JP S63163289A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- contact
- high frequency
- lead
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005259 measurement Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 2
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置を位置決めし、コンタクト又はソ
ケットとの接触をよくした半導体装置の高周波特性測定
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for measuring high frequency characteristics of a semiconductor device that positions the semiconductor device and makes good contact with a contact or socket.
従来の半導体装置の高周波特性を測定する装置としては
、半導体装置を位置決めし、コンタクトと接触させるハ
ンドラがあり、測定装置のコンタクト又はソケットに測
定すべき半導体装置のリードを接触させ、この半導体装
置の特性を高周波において測定する様になっていた。Conventional equipment for measuring the high frequency characteristics of semiconductor devices includes a handler that positions the semiconductor device and brings it into contact with contacts. Characteristics were measured at high frequencies.
上述した従来の測定装置のコンタクト、ソケ・ソト等に
半導体装置のリードを接触させて、この半導体装置の特
性を測定する場合、特に高周波特性を測定しなければな
らない半導体装置では、コンタクＩ−、ソケットの部分
のＬ（インダクタンス）。When measuring the characteristics of a semiconductor device by contacting the leads of the semiconductor device with the contacts, sockets, etc. of the conventional measuring device described above, contact I-, L (inductance) of the socket part.
Ｃ（要り）が大きくなり、正しい測定ができないという
欠点がある。There is a drawback that C (required) becomes large and accurate measurement cannot be performed.
本発明の目的は、このような問題を解決し、測定回路を
構成している基板の電極に、半導体装置のリードを直接
接触させることにより、高周波特性を改善させた半導体
装置の高周波特性測定装置を提供することにある。An object of the present invention is to solve these problems and provide a high-frequency characteristic measuring device for a semiconductor device in which the high-frequency characteristics are improved by bringing the leads of the semiconductor device into direct contact with the electrodes of the substrate constituting the measuring circuit. Our goal is to provide the following.
本発明の構成は、半導体装置を位置決めしかつ測定回路
部と接触させてこの半導体装置の特性を測定するハンド
ラを用いてその高周波特性を測定する高周波特性測定装
置において、前記測定回路部の測定端となる基板の電極
に直接前記半導体装置の一ドを押圧して接触させる手段
を備えたことを特徴とする。The configuration of the present invention provides a high frequency characteristic measuring device that measures the high frequency characteristics of a semiconductor device using a handler that positions a semiconductor device and measures the characteristics of the semiconductor device by bringing it into contact with a measuring circuit section. The semiconductor device is characterized by comprising means for pressing one side of the semiconductor device directly into contact with an electrode of a substrate.
次に本発明を図面により詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
第１図（ａ＞、（ｂ）は本発明の一実施例の正面図およ
び側面図である。本実施例は、半導体装置１のリード３
を直接押えるリード押さえ２と、半導体装置１のリード
３と接触させる基板５上の電極４と、測定回路６と、こ
の測定回路部６を振動させる振動体７とで構成される。1(a) and (b) are a front view and a side view of an embodiment of the present invention.This embodiment shows a lead 3 of a semiconductor device 1.
It is composed of a lead presser 2 that directly presses the lead holder 2, an electrode 4 on the substrate 5 that is brought into contact with the lead 3 of the semiconductor device 1, a measuring circuit 6, and a vibrating body 7 that vibrates the measuring circuit section 6.
本実施例の動作は、次のとおりである。The operation of this embodiment is as follows.
測定すべき半導体装置１は、リード押さえ２によりその
製品リード３が位置決めされ、また電極４への接触を行
なわれている。これら製品リード３と電極４との接触後
、製品リード３と電極４を良く接触させるように超音波
など振動体７により微小振動を与えて、表面酸化膜を除
去する。このようにした後基板５及び測定回路６により
半導体装置１の測定が行なわれる。The product leads 3 of the semiconductor device 1 to be measured are positioned by the lead holders 2 and brought into contact with the electrodes 4 . After the product lead 3 and the electrode 4 are brought into contact, a microvibration is applied by a vibrator 7 such as an ultrasonic wave so that the product lead 3 and the electrode 4 are brought into good contact, thereby removing the surface oxide film. After doing this, the semiconductor device 1 is measured using the substrate 5 and the measuring circuit 6.
第２図は本発明の第２の実施例の斜視図である。本実施
例の構成は、第１の実施例と同じであるが、本実施例で
は製品リード押さえ２の方にＸ、Ｙ方向の微小振動を与
えるようにしたもので、大きな測定回路部６を有する測
定器の場合には、この測定回路側を動かさなくても良い
という利点がある。FIG. 2 is a perspective view of a second embodiment of the invention. The configuration of this embodiment is the same as that of the first embodiment, but in this embodiment, minute vibrations are applied to the product lead holder 2 in the X and Y directions, and a large measurement circuit section 6 is In the case of a measuring device that has the following, there is an advantage that the measuring circuit side does not need to be moved.
以上説明したように、本発明は、測定回路６を構成して
いる基板５の電極４に半導体装置１を位置決めし、製品
リード３を誘電率の低い材料を使って直接接触させ、か
つ半導体装置１の製品り−ド３と基板５の電極４の間に
超音波などの微小振動を与えることにより、測定回路部
６の測定電極４に、直接リード３が充分に接触されるの
で、高周波測定が良好にできる効果がある。As explained above, the present invention positions the semiconductor device 1 on the electrode 4 of the substrate 5 constituting the measurement circuit 6, brings the product lead 3 into direct contact using a material with a low dielectric constant, and By applying minute vibrations such as ultrasonic waves between the product lead 3 of 1 and the electrode 4 of the substrate 5, the lead 3 is brought into sufficient direct contact with the measurement electrode 4 of the measurement circuit section 6, allowing high-frequency measurement. It has the effect of making it better.
第１図（ａ＞、（ｂ）は本発明の第１の実施例の正面図
およびその側面図、第２図は本発明の第２の実施例の斜
視図である。
１・・・半導体装置、２・・・リード押さえ、３・・・
製品リード、４・・・電極、５・・・基板、６・・・測
定回路部、７・・・振動体。1 (a>, (b) are a front view and a side view of the first embodiment of the present invention, and FIG. 2 is a perspective view of the second embodiment of the present invention. 1... Semiconductor Device, 2... Lead holder, 3...
Product lead, 4... Electrode, 5... Board, 6... Measurement circuit section, 7... Vibrating body.
Claims (2)
せてこの半導体装置の特性を測定するハンドラを用いて
その高周波特性を測定する高周波特性測定装置において
、前記測定回路部の測定端となる基板の電極に直接前記
半導体装置のリードを押圧して接触させる手段を備えた
ことを特徴とする半導体装置の高周波特性測定装置。(1) In a high frequency characteristic measuring device that measures the high frequency characteristics of a semiconductor device using a handler that positions the semiconductor device and measures the characteristics of the semiconductor device by bringing it into contact with the measuring circuit section, a substrate serving as the measurement end of the measuring circuit section. An apparatus for measuring high frequency characteristics of a semiconductor device, comprising means for pressing a lead of the semiconductor device directly into contact with an electrode of the semiconductor device.
からなり、かつ前記リードあるいはこのリードと接触す
る基板の電極に微小振動を与える振動手段を有するもの
である特許請求の範囲第１項記載の半導体装置の高周波
特性測定装置。(2) The lead contacting means of the semiconductor device is made of a material with a low dielectric constant, and has vibration means for applying minute vibrations to the lead or to the electrode of the substrate in contact with the lead. A high-frequency characteristic measuring device for semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30964086A JPS63163289A (en) | 1986-12-26 | 1986-12-26 | High frequency characteristic measuring instrument for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30964086A JPS63163289A (en) | 1986-12-26 | 1986-12-26 | High frequency characteristic measuring instrument for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63163289A true JPS63163289A (en) | 1988-07-06 |
Family
ID=17995473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30964086A Pending JPS63163289A (en) | 1986-12-26 | 1986-12-26 | High frequency characteristic measuring instrument for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63163289A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8132357B2 (en) | 2008-04-30 | 2012-03-13 | Fred Rogacki | Fumigation of containerized cargo |
| US9497955B1 (en) | 2008-04-30 | 2016-11-22 | Fred Rogacki | Fumigation of containerized cargo |
| CN114127572A (en) * | 2019-07-25 | 2022-03-01 | 西门子股份公司 | Method and device for detecting ageing-related damage or delamination on components, in particular power modules of power electronics and power electronics, in particular converters |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60187100A (en) * | 1984-03-07 | 1985-09-24 | 株式会社日立製作所 | Sorting device |
| JPS6134484B2 (en) * | 1982-12-24 | 1986-08-08 | Nippon Solex Kk |
-
1986
- 1986-12-26 JP JP30964086A patent/JPS63163289A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134484B2 (en) * | 1982-12-24 | 1986-08-08 | Nippon Solex Kk | |
| JPS60187100A (en) * | 1984-03-07 | 1985-09-24 | 株式会社日立製作所 | Sorting device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8132357B2 (en) | 2008-04-30 | 2012-03-13 | Fred Rogacki | Fumigation of containerized cargo |
| US8424240B2 (en) | 2008-04-30 | 2013-04-23 | Fred Rogacki | Fumigation of containerized cargo |
| US8656635B1 (en) | 2008-04-30 | 2014-02-25 | Fred Rogacki | Fumigation of containerized cargo |
| US9497955B1 (en) | 2008-04-30 | 2016-11-22 | Fred Rogacki | Fumigation of containerized cargo |
| CN114127572A (en) * | 2019-07-25 | 2022-03-01 | 西门子股份公司 | Method and device for detecting ageing-related damage or delamination on components, in particular power modules of power electronics and power electronics, in particular converters |
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