JPH06204303A - Probe device - Google Patents

Probe device

Info

Publication number
JPH06204303A
JPH06204303A JP36145792A JP36145792A JPH06204303A JP H06204303 A JPH06204303 A JP H06204303A JP 36145792 A JP36145792 A JP 36145792A JP 36145792 A JP36145792 A JP 36145792A JP H06204303 A JPH06204303 A JP H06204303A
Authority
JP
Japan
Prior art keywords
inspected
probe
chip
wafer
pressing member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP36145792A
Other languages
Japanese (ja)
Inventor
Yasumichi Murata
泰通 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP36145792A priority Critical patent/JPH06204303A/en
Publication of JPH06204303A publication Critical patent/JPH06204303A/en
Pending legal-status Critical Current

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  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To conduct an effective electric measurement by the input of high frequency signal by a method wherein a pressing member, with which the surface to be inspected of the material to be inspected when a contact means is brought into contact with the material to be inspected, is provided on a probe card. CONSTITUTION:A driving axle probe 5, which is a contact means, is provided in such a manner that it is cantilever-supported to an insulative probe supporting stand 23 made of ceramic and the like, and extended toward the center of an aperture 31. On the lower surface of a probe card 3, a pair of pressing member 7, which presses from two places on wafer surface, are provided at the position on the rear side of a coaxial probe 51 through the intermediary of a supporting stud 71. This supporting stud 71 is inserted and fixed to the pressing member 7 and fixed there, the base end part of the supporting stud 71 is fixed to the lower surface of the probe card 3, it is brought into contact with the surface to be inspected of the wafer from the bottom face of the pressing member when an inspect ion is conducted, and presses the wafer surface. As a result, the vibration of the material to be inspected is suppressed, and an electric measurement can be conducted accurately.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はプローブ装置に関する。FIELD OF THE INVENTION The present invention relates to a probe device.

【0002】[0002]

【従来の技術】半導体デバイスの製造工程においては、
ウエハプロセスが終了してウエハ内にICチップが完成
した後、電極パターンのショート、オープンやICチッ
プの入出力特性などを調べるためにプローブテストと呼
ばれる電気的測定が行われ、半導体ウエハ(以下「ウエ
ハ」という。)の状態でICチップの良否が判別され
る。その後ウエハはICチップに分断され、良品のIC
チップについてパッケージングされてから例えば所定の
プローブテストを行って最終製品の良否が判定される。
2. Description of the Related Art In a semiconductor device manufacturing process,
After the wafer process is completed and an IC chip is completed in the wafer, an electrical measurement called a probe test is performed in order to check the short-circuit and open of the electrode pattern, the input / output characteristics of the IC chip, and the like. The quality of the IC chip is determined in the state of "wafer". After that, the wafer is divided into IC chips, and good ICs
After the chip is packaged, for example, a predetermined probe test is performed to determine the quality of the final product.

【0003】ここでウエハの状態でプローブテストを行
うためには、従来例えばX、Y、Z、θ方向に移動可能
なウエハ保持台の上方側に、ウエハ内のICチップの電
極パッド配列に対応して複数のプローブ針を配列したプ
ローブカードを配置し、ウエハ保持台を移動させてウエ
ハ内のICチップの電極パッドとプローブ針とを位置合
わせした後プローブ針と電極パッドとを接触させ、電極
パッドをプローブ針とポゴピンなどを含むコンタクトリ
ングを介してテストヘッドに電気的に接続して電気的測
定を行い、ICチップの良否を判定するようにしてい
る。
Here, in order to perform a probe test in a wafer state, conventionally, for example, above the wafer holder which is movable in the X, Y, Z, and θ directions, it corresponds to the electrode pad arrangement of the IC chips in the wafer. Then, a probe card in which a plurality of probe needles are arranged is arranged, the wafer holder is moved to align the electrode pad of the IC chip in the wafer with the probe needle, and then the probe needle and the electrode pad are brought into contact with each other, and the electrode The pad is electrically connected to the test head through a contact ring including a probe needle and a pogo pin, and electrical measurement is performed to determine the quality of the IC chip.

【0004】ここで動作の高速化に伴い、スーパーコン
ピュータなどに用いられるデバイスの中には、可成り周
波数の高い高周波信号を印加して測定を行う必要がある
ものがあり、このような高周波信号をデバイスとテスト
ヘッドとの間で伝送するためには、信号伝達用の導体針
の外周に絶縁体層及び導体層を同軸上に設けてなる同軸
プローブ針が用いられる。この場合テスタからのワイヤ
リング長と信号の波長などの関係から、プロ−ブ針の先
端から反射波が発生して誤検査の原因となるが、最近で
は導体針の先端に無反射終端器を接続するなど種々の工
夫がされている。
Here, with the increase in operation speed, some devices used in supercomputers and the like need to apply a high frequency signal having a considerably high frequency for measurement. In order to transmit the signal between the device and the test head, a coaxial probe needle in which an insulator layer and a conductor layer are coaxially provided on the outer circumference of a conductor needle for signal transmission is used. In this case, due to the relationship between the wiring length from the tester and the wavelength of the signal, a reflected wave is generated from the tip of the probe needle, which causes erroneous inspection, but recently, a non-reflection terminator is connected to the tip of the conductor needle. Various measures have been taken such as

【0005】ところでデバイスの中には、例えば水晶で
作られるSAW(surfaceacoustic w
ave)フィルタのように高周波信号を印加すると振動
を起こすものがあり、このようなデバイスがウエハ上に
配列されている場合、測定時に高周波信号を印加する
と、測定対象のICチップ(測定チップ)が振動してこ
の振動により隣接するICチップ(隣接チップ)が共振
し、その振動が反射波として測定チップに伝播するた
め、その反射波の影響によって本来の特性が得られず、
正確な測定が行えない。
By the way, some devices include, for example, a SAW (surface acoustic w) made of crystal.
ave) Some filters, such as a filter, vibrate when a high frequency signal is applied. When such a device is arranged on a wafer, when a high frequency signal is applied during measurement, the IC chip (measurement chip) to be measured is The vibration causes the adjacent IC chip (adjacent chip) to resonate due to this vibration, and the vibration propagates to the measurement chip as a reflected wave, so that the original characteristics cannot be obtained due to the influence of the reflected wave.
Accurate measurement cannot be performed.

【0006】そこで測定チップの振動の伝播による隣接
チップの共振を抑えるために、従来では測定チップと隣
接チップとの境界領域にテープを貼り、これによって共
振の悪影響を回避する方法が採られていた。
Therefore, in order to suppress the resonance of the adjacent chip due to the propagation of the vibration of the measuring chip, a method has heretofore been adopted in which a tape is attached to the boundary region between the measuring chip and the adjacent chip, thereby avoiding the adverse effect of the resonance. .

【0007】[0007]

【発明が解決しようとする課題】しかしながらウエハ上
に境界領域に沿ってテープを貼る方法は、非常に手間の
かかる手作業を伴う上時間がかかり、スループットの低
下の一因になっていたし、またウエハの汚染の要因にも
なっていた。
However, the method of sticking the tape along the boundary area on the wafer is very time-consuming and requires a lot of manual work, which is one of the causes of the decrease in throughput. It was also a factor of wafer contamination.

【0008】本発明は、このような事情のもとになされ
たものであり、その目的は、高周波信号の入力により振
動の伴う被検査体を検査するにあたって、電気的測定が
効率よく行えるプローブ装置を提供することにある。
The present invention has been made under these circumstances, and an object thereof is to provide a probe device capable of efficiently performing electrical measurement when inspecting an object to be inspected accompanied by vibration by inputting a high frequency signal. To provide.

【0009】[0009]

【課題を解決するための手段】プローブカードに設けら
れた接触手段を被検査体に接触させ、この接触手段を介
してテスタ側から被検査体に高周波信号を印加するプロ
ーブ装置において、前記接触手段が被検査体に接触した
ときに当該被検査体の被検査面を押圧する押圧部材をプ
ローブカードに設けたことを特徴とする。
In the probe device, a contact means provided on a probe card is brought into contact with an object to be inspected, and a high frequency signal is applied to the object to be inspected from the tester side through the contact means. The probe card is provided with a pressing member that presses the surface to be inspected of the object to be inspected when is contacted with the object to be inspected.

【0010】[0010]

【作用】プローブカードの高周波信号用の接触手段例え
ば同軸プローブ針を被検査体に接触させてテスタ側から
この同軸プローブ針に高周波信号を印加すると被検査体
が振動する。ここで被検査体に接触手段が接触したとき
に被検査体の被検査面例えばICチップ同士の境界領域
が押圧されるので、測定チップの振動による共振に基づ
く例えば隣接チップからの反射波を抑えることができ、
従って共振による電気的測定の悪影響を回避することが
できる。
When the contact means for high frequency signals of the probe card, for example, the coaxial probe needle is brought into contact with the object to be inspected and a high frequency signal is applied to the coaxial probe needle from the tester side, the object to be inspected vibrates. Here, when the contact means comes into contact with the object to be inspected, a surface to be inspected of the object to be inspected, for example, a boundary region between IC chips is pressed, so that a reflected wave from, for example, an adjacent chip due to resonance due to vibration of the measurement chip is suppressed. It is possible,
Therefore, the adverse effect of electrical measurement due to resonance can be avoided.

【0011】[0011]

【実施例】図1〜図3は、本発明の実施例を示す図であ
る。この実施例では、筐体1の中に、駆動機構21によ
りX、Y、Z、及びθ方向に駆動されるウエハ保持台2
が設けられており、このウエハ保持台2の上方側には、
中央に開口31が設けられたプローブカード3が、ウエ
ハ保持台2と対向するように配置されている。プローブ
カード3の下面には、ウエハ上の電極パッドの配列に対
応して、前記開口31の相対向する二辺側から多数の接
触手段であるプローブ針4が、セラミックなどの絶縁性
のプローブ針支持台22に片持支持されて中央へ向けて
斜め下方に延伸して配列されている。このプローブ針4
の基端は、プローブカード3のプリント配線に電気的に
接続されており、このプリント配線は、プローブカード
3上に配置されるコンタクトリング32のポゴピン33
を介してテストヘッド34に電気的に接続される。
1 to 3 are views showing an embodiment of the present invention. In this embodiment, a wafer holding table 2 which is driven in the X, Y, Z, and θ directions by a driving mechanism 21 in a housing 1.
Is provided, and on the upper side of the wafer holding table 2,
A probe card 3 having an opening 31 in the center is arranged so as to face the wafer holder 2. On the lower surface of the probe card 3, a plurality of probe needles 4 serving as contact means are provided from two opposite sides of the opening 31 corresponding to the arrangement of the electrode pads on the wafer. The support 22 is cantilevered and arranged obliquely downward toward the center. This probe needle 4
Of the contact ring 32 arranged on the probe card 3 is electrically connected to the printed wiring of the probe card 3.
Is electrically connected to the test head 34 via.

【0012】そしてプローブカード3の下面には、ウエ
ハW上に配列された電極パッドのうち、高周波信号を印
加あるいは取り出して測定を行うべき電極パッドの位置
に対応して、前記開口31のプローブ針4が配置されて
いない残りの二辺側から、接触手段である同軸プローブ
針5が例えば1本ずつセラミックなどの絶縁性のプロー
ブ針支持台23に片持支持されて開口31の中央に延伸
するように配設されている。
Then, on the lower surface of the probe card 3, of the electrode pads arranged on the wafer W, probe needles of the opening 31 corresponding to the position of the electrode pad to be measured by applying or extracting a high frequency signal. Coaxial probe needles 5 serving as contact means are cantilevered one by one from an insulating probe needle support base 23 made of, for example, ceramic, and extend to the center of the opening 31 from the remaining two sides where no 4 is arranged. It is arranged as follows.

【0013】この同軸プローブ針5は、信号伝達用の芯
線に絶縁層を介して外皮をなす導体層を形成してなる同
軸ケーブル51を用い、その先端部に芯線である信号伝
達用の導体針52が露出されてその露出部の先端を、電
極パッドと接触させるように下側へ向けると共に、同軸
ケーブル51の外皮である導体層の先端部を分岐して接
地用の導体針53を形成して構成されている。ここで前
記導体針52の露出部の長さは、ノイズやクロストーク
及び高周波信号の減衰等を減少させるため3mm以下と
するのが望ましい。
The coaxial probe needle 5 uses a coaxial cable 51 in which a conductor layer forming an outer skin is formed on a core wire for signal transmission via an insulating layer, and a conductor needle for signal transmission, which is a core wire, is provided at a tip portion thereof. 52 is exposed and the tip of the exposed portion is directed downward so as to contact with the electrode pad, and the tip of the conductor layer which is the outer cover of the coaxial cable 51 is branched to form the conductor needle 53 for grounding. Is configured. The length of the exposed portion of the conductor needle 52 is preferably 3 mm or less in order to reduce noise, crosstalk, attenuation of high frequency signals and the like.

【0014】前記プローブカード3の表面における開口
部31の両側位置には、前記同軸ケーブル51に対応し
て夫々2個のソケット6A、6Bが絶縁性の台座61を
介して配設されており、これら同軸ケ−ブル51はプロ
ーブカード3の裏面側から台座61を貫通してソケット
6A(6B)に接続される。ただし図1では一方の同軸
ケ−ブル51に対応するソケット6Aのみ示してある。
Two sockets 6A and 6B corresponding to the coaxial cable 51 are provided on both sides of the opening 31 on the surface of the probe card 3 via insulating pedestals 61, respectively. These coaxial cables 51 penetrate the pedestal 61 from the back side of the probe card 3 and are connected to the sockets 6A (6B). However, in FIG. 1, only the socket 6A corresponding to one coaxial cable 51 is shown.

【0015】そして前記ソケット6A、6Bには、テス
トヘッド34からの図示しない同軸ケーブルが接続さ
れ、この同軸ケーブルを介して前記同軸ケーブル51の
芯線は、テストヘッド34内の信号入力(出力)用の端
子に接続され、また外皮である導体層はテストヘッド3
4内にて接地される。
A coaxial cable (not shown) from the test head 34 is connected to the sockets 6A and 6B, and the core wire of the coaxial cable 51 is used for signal input (output) in the test head 34 via the coaxial cable. The conductor layer that is connected to the terminals of the
Grounded within 4.

【0016】更に前記プローブカード3の下面には、ウ
エハWの表面(被検査面)を2ヶ所から押圧する一対の
押圧部材7が例えば同軸プローブ針51の後方側(開口
部31の外方側)位置に支持杆71を介して設けられて
いる。
Further, on the lower surface of the probe card 3, a pair of pressing members 7 for pressing the front surface (surface to be inspected) of the wafer W from two locations are provided, for example, on the rear side of the coaxial probe needle 51 (outer side of the opening 31). ) Is provided via a supporting rod 71.

【0017】この押圧部材7は、振動を吸収する性質を
有する、例えばゴム等の弾性材からなり、測定すべきI
Cチップとこれに隣接するICチップの境界部分を覆う
ように例えば約2mm角で厚さが1mmの直方体形状に
形成されている。そして前記支持杆71は、その先端部
が押圧部71の内部に挿入して固定され、基端部が前記
プローブカード3の下面に固定されて、検査時には押圧
部材7の底面がウエハWの被検査面に接触してこれを押
圧するように構成される。
The pressing member 7 is made of an elastic material, such as rubber, which has a property of absorbing vibration, and is to be measured I
It is formed in a rectangular parallelepiped shape of about 2 mm square and 1 mm thick so as to cover the boundary portion between the C chip and the IC chip adjacent thereto. The support rod 71 has its front end inserted and fixed inside the pressing portion 71, its base end fixed to the lower surface of the probe card 3, and the bottom surface of the pressing member 7 is covered with the wafer W during inspection. It is configured to contact and press the inspection surface.

【0018】次に上述実施例の作用について述べる。先
ず例えば水晶を用いて構成したSAWフィルタよりなる
ICチップが縦横に配列された、被検査体であるウエハ
Wを、図示しない搬送機構によりウエハ保持台2上に載
置し、プローブカード3に配列されているプローブ針4
及び同軸プローブ針5と測定すべきICチップの電極パ
ッドとが対応するように駆動機構21によりウエハ保持
台をX、Y及びθ方向に移動させることによって位置合
わせを行う。
Next, the operation of the above embodiment will be described. First, a wafer W, which is an object to be inspected, in which IC chips composed of SAW filters configured by using, for example, crystal are vertically and horizontally arranged, is placed on the wafer holding table 2 by a transfer mechanism (not shown) and arranged on the probe card 3. Probe needle 4
Positioning is performed by moving the wafer holder in the X, Y and θ directions by the drive mechanism 21 so that the coaxial probe needle 5 and the electrode pad of the IC chip to be measured correspond to each other.

【0019】次いでウエハ保持台2を所定の高さまで上
昇させて図5に示すように、プローブ針4と同軸プロー
ブ針5をウエハW上のこれから測定すべきICチップ
(SAWフィルタ)の電極パッドに接触させると共に、
押圧部材7により当該測定すべきICチップ10aとこ
れの両側に隣接するICチップ10b、10cとの境界
領域表面を互に隣接する両ICチップに跨って押圧す
る。
Then, the wafer holder 2 is raised to a predetermined height and, as shown in FIG. 5, the probe needle 4 and the coaxial probe needle 5 are used as electrode pads of the IC chip (SAW filter) to be measured on the wafer W. As well as contact
The pressing member 7 presses the surface of the boundary area between the IC chip 10a to be measured and the IC chips 10b and 10c adjacent to both sides of the IC chip 10a across both IC chips adjacent to each other.

【0020】この結果ICチップ10aの電極パッドは
先述したようにテストヘッド34に電気的に接続され、
テストヘッド34によりプローブ針4を通じて直流特性
などの測定が行われると共に、例えば開口部31の両側
に位置する2本の同軸プローブ針5のうちの一方を通じ
て高周波信号が印加され、他方を通じて高周波信号が取
り出される。なおこの場合ICチップ10aは、同軸プ
ローブ針5の接地用の導体針53を介してテストヘッド
34内のアースに接続されてICチップ10a内のグラ
ンド端子が接地される。
As a result, the electrode pads of the IC chip 10a are electrically connected to the test head 34 as described above,
The test head 34 measures the direct current characteristics and the like through the probe needle 4, and a high frequency signal is applied through one of the two coaxial probe needles 5 located on both sides of the opening 31 and a high frequency signal is applied through the other. Taken out. In this case, the IC chip 10a is connected to the ground in the test head 34 via the grounding conductor needle 53 of the coaxial probe needle 5, and the ground terminal in the IC chip 10a is grounded.

【0021】そして測定の際、検査対象であるICチッ
プ10aは、高周波信号の印加により振動を起こすが、
当該ICチップ10a及びこれに隣接するICチップ1
0b、10cとの境界領域が押圧部材7により押圧され
ているため、検査対象であるICチップ10aの振動
と、この振動の隣接ICチップ10b、10cへの伝播
とを抑えることができ、この結果ICチップ10aの振
動にもとずくICチップ10b、10cの共振及び、I
Cチップ10b、10cからICチップ10aへ伝播さ
れる反射波が抑えられる。
At the time of measurement, the IC chip 10a to be inspected vibrates due to the application of a high frequency signal.
The IC chip 10a and the IC chip 1 adjacent to the IC chip 10a
Since the boundary area between 0b and 10c is pressed by the pressing member 7, the vibration of the IC chip 10a to be inspected and the propagation of this vibration to the adjacent IC chips 10b and 10c can be suppressed. Resonance of the IC chips 10b and 10c due to the vibration of the IC chip 10a and I
The reflected waves propagating from the C chips 10b and 10c to the IC chip 10a are suppressed.

【0022】このようにして1つのSAWフィルタの検
査を終了した後、ウエハW上に配列された次のSAWフ
ィルタについて同様の方法を用いて、検査が行われ、全
てのSAWフィルタの検査が終了したウエハWは図示し
ない搬送機構により搬出される。
After the inspection of one SAW filter is completed in this way, the inspection is performed on the next SAW filter arranged on the wafer W by using the same method, and the inspection of all SAW filters is completed. The completed wafer W is unloaded by a transfer mechanism (not shown).

【0023】このような実施例によれば、ウエハW上の
SAWフィルタが高周波信号の入力により振動しても上
述の如く押圧部材7により当該SAWフィルタに反射す
る振動が抑えられるるので、正確な測定を行うことがで
きるし、またプローブ針4や同軸プローブ針5が電極パ
ッドから外れるといったことも防止できる。
According to such an embodiment, even if the SAW filter on the wafer W vibrates due to the input of the high frequency signal, the vibration reflected by the SAW filter by the pressing member 7 can be suppressed as described above, so that it is accurate. It is possible to perform the measurement and also prevent the probe needle 4 and the coaxial probe needle 5 from coming off from the electrode pad.

【0024】以上において押圧部材7は、図5に示すよ
うにICチップ10aに対して左右(先の実施例の場合
と直角な方向)に隣接するICチップ10c、10dと
当該ICチップ10aとの境界領域を押圧するように構
成してもよいし、あるいはICチップ10aの四隅にお
ける境界領域を夫々分割して押圧するように構成しても
よい。本発明では押圧部材7により押圧する被検査面上
の領域は、ICチップの振動を有効に抑えることができ
る範囲であれば適宜設定することができる。
In the above, as shown in FIG. 5, the pressing member 7 is composed of the IC chips 10c and 10d adjacent to the IC chip 10a on the left and right sides (directions perpendicular to the case of the previous embodiment) and the IC chip 10a. The boundary regions may be pressed, or the boundary regions at the four corners of the IC chip 10a may be divided and pressed. In the present invention, the area on the surface to be inspected that is pressed by the pressing member 7 can be appropriately set as long as it is a range in which the vibration of the IC chip can be effectively suppressed.

【0025】また押圧部材7は、上述の実施例では支持
杆71を介してプローブカード3に設けられるが、プロ
ーブカード3に直接設けるようにしてもよいし、あるい
はまたバネを介して設けるようにしてもよい。更にまた
本発明は、同軸プローブ針5の外皮である導体層を介し
てICチップを接地する構成に限られるものではない。
Further, although the pressing member 7 is provided on the probe card 3 via the support rod 71 in the above-mentioned embodiment, it may be provided directly on the probe card 3 or may be provided via a spring. May be. Furthermore, the present invention is not limited to the configuration in which the IC chip is grounded via the conductor layer that is the outer cover of the coaxial probe needle 5.

【0026】そしてまた高周波信号をICチップに印加
する接触手段としては同軸プローブ針5に限られるもの
ではなく、例えば同軸処理されていない横針や垂直針で
あってもよい。なお本発明は高周波信号を入力して振動
を起こすものであれば、SAWフィルタ以外のデバイス
を測定する場合にも適用することができる。
Further, the contact means for applying the high frequency signal to the IC chip is not limited to the coaxial probe needle 5, but may be a lateral needle or a vertical needle which is not coaxially processed. Note that the present invention can be applied to the case of measuring a device other than the SAW filter as long as a high frequency signal is input to cause vibration.

【0027】[0027]

【発明の効果】以上のように本発明によれば、被検査体
が高周波信号の入力により振動してもプローブカードに
設けらた押圧部材により被検査面を押圧しているため、
被検査体の振動が抑えられ、この結果正確な電気的測定
を行うことができる。
As described above, according to the present invention, the surface to be inspected is pressed by the pressing member provided on the probe card even if the object to be inspected vibrates due to the input of a high frequency signal.
Vibration of the inspection object is suppressed, and as a result, accurate electrical measurement can be performed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例の要部を示す斜視図である。FIG. 1 is a perspective view showing a main part of an embodiment of the present invention.

【図2】本発明の実施例の全体構成を示す縦断側面図で
ある。
FIG. 2 is a vertical sectional side view showing the overall configuration of the embodiment of the present invention.

【図3】本発明の実施例の要部を示す縦断側面図であ
る。
FIG. 3 is a vertical sectional side view showing a main part of the embodiment of the present invention.

【図4】押圧部材により半導体ウエハの表面を押圧して
いる状態を示す斜視図である。
FIG. 4 is a perspective view showing a state in which the surface of a semiconductor wafer is pressed by a pressing member.

【図5】本発明の他の実施例を示す斜視図である。FIG. 5 is a perspective view showing another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

2 ウエハ保持台 3 プローブカード 4 プローブ針 5 同軸プローブ針 7 押圧部材 71 支持杆 10a〜10e ICチップ 2 Wafer holder 3 Probe card 4 Probe needle 5 Coaxial probe needle 7 Pressing member 71 Support rod 10a to 10e IC chip

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 プローブカードに設けられた接触手段を
被検査体に接触させ、この接触手段を介してテスタ側か
ら被検査体に高周波信号を印加するプローブ装置におい
て、 前記接触手段が被検査体に接触したときに当該被検査体
の被検査面を押圧する押圧部材をプローブカードに設け
たことを特徴とするプローブ装置。
1. A probe device in which a contact means provided on a probe card is brought into contact with an object to be inspected, and a high-frequency signal is applied to the object to be inspected from the tester side through the contact means. A probe device, wherein a pressing member for pressing the surface to be inspected of the object to be inspected when the probe card is contacted with the probe card is provided.
JP36145792A 1992-12-29 1992-12-29 Probe device Pending JPH06204303A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36145792A JPH06204303A (en) 1992-12-29 1992-12-29 Probe device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36145792A JPH06204303A (en) 1992-12-29 1992-12-29 Probe device

Publications (1)

Publication Number Publication Date
JPH06204303A true JPH06204303A (en) 1994-07-22

Family

ID=18473670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36145792A Pending JPH06204303A (en) 1992-12-29 1992-12-29 Probe device

Country Status (1)

Country Link
JP (1) JPH06204303A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004045089A (en) * 2002-07-09 2004-02-12 Fujitsu Ltd Probe card and semiconductor tester
TWI407106B (en) * 2009-09-17 2013-09-01 Mpi Corp High frequency cantilever probe card
TWI512300B (en) * 2013-07-15 2015-12-11 Mpi Corp Cantilever high frequency probe card

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004045089A (en) * 2002-07-09 2004-02-12 Fujitsu Ltd Probe card and semiconductor tester
TWI407106B (en) * 2009-09-17 2013-09-01 Mpi Corp High frequency cantilever probe card
TWI512300B (en) * 2013-07-15 2015-12-11 Mpi Corp Cantilever high frequency probe card

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