JPS6315715B2 - - Google Patents
Info
- Publication number
- JPS6315715B2 JPS6315715B2 JP59108980A JP10898084A JPS6315715B2 JP S6315715 B2 JPS6315715 B2 JP S6315715B2 JP 59108980 A JP59108980 A JP 59108980A JP 10898084 A JP10898084 A JP 10898084A JP S6315715 B2 JPS6315715 B2 JP S6315715B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- film
- insulating layer
- layer
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59108980A JPS60253193A (ja) | 1984-05-29 | 1984-05-29 | アモルフアスシリコン系エレクトロルミネセンス装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59108980A JPS60253193A (ja) | 1984-05-29 | 1984-05-29 | アモルフアスシリコン系エレクトロルミネセンス装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60253193A JPS60253193A (ja) | 1985-12-13 |
| JPS6315715B2 true JPS6315715B2 (enExample) | 1988-04-06 |
Family
ID=14498525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59108980A Granted JPS60253193A (ja) | 1984-05-29 | 1984-05-29 | アモルフアスシリコン系エレクトロルミネセンス装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60253193A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61188893A (ja) * | 1985-02-14 | 1986-08-22 | シャープ株式会社 | 薄膜発光素子の製造方法 |
| JP5575408B2 (ja) * | 2009-01-29 | 2014-08-20 | 一般財団法人ファインセラミックスセンター | 発光体およびその製造方法 |
-
1984
- 1984-05-29 JP JP59108980A patent/JPS60253193A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60253193A (ja) | 1985-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE68928245T2 (de) | Durch elektrisches Feld lichtemittierende Vorrichtung | |
| CN100463210C (zh) | 采用低电阻阴极的有机电致发光显示装置 | |
| JP2000340366A (ja) | 発光ダイオード | |
| JPH0543399A (ja) | 薄膜機能部材 | |
| JPH07176745A (ja) | 半導体素子 | |
| JP2001043977A (ja) | 発光ダイオード | |
| US5721562A (en) | Electroluminescent display device including a columnar crystal structure insulating film | |
| WO1993021744A1 (fr) | Element electroluminescent a film minces | |
| US5264714A (en) | Thin-film electroluminescence device | |
| JPS6315715B2 (enExample) | ||
| US4857802A (en) | Thin film EL element and process for producing the same | |
| US5194777A (en) | Method for fabricating electroluminescence display device and electroluminescence display device | |
| US5539424A (en) | Thin-film electroluminescence display device | |
| JP3366169B2 (ja) | 多結晶シリコン薄膜積層体、シリコン薄膜太陽電池および薄膜トランジスタ | |
| JPS5824915B2 (ja) | 薄膜el素子 | |
| JP2614098B2 (ja) | 電界発光素子 | |
| KR0158479B1 (ko) | 저전압 구동 전계발광소자와 그 제조방법 | |
| JP2614096B2 (ja) | 電界発光素子 | |
| KR960030748A (ko) | 백색발광용 전계발광소자 및 그 제조방법 | |
| KR0164456B1 (ko) | 청색발광용 전계발광소자 및 그 제조방법 | |
| JPH03112089A (ja) | 薄膜el素子 | |
| JPH04249094A (ja) | 薄膜エレクトロルミネッセンス素子の製造法 | |
| KR880000670B1 (ko) | El 소자 | |
| JPH0754750B2 (ja) | 薄膜el素子 | |
| JPH0265094A (ja) | 薄膜el素子及びその製造方法 |