JPS63151042A - 半導体結晶におけるイオン注入量測定方法 - Google Patents
半導体結晶におけるイオン注入量測定方法Info
- Publication number
- JPS63151042A JPS63151042A JP62293041A JP29304187A JPS63151042A JP S63151042 A JPS63151042 A JP S63151042A JP 62293041 A JP62293041 A JP 62293041A JP 29304187 A JP29304187 A JP 29304187A JP S63151042 A JPS63151042 A JP S63151042A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor crystal
- ion implantation
- harmonic
- measuring
- fundamental wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 60
- 239000013078 crystal Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000001427 coherent effect Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims 6
- 230000005855 radiation Effects 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 19
- 238000005259 measurement Methods 0.000 description 14
- 239000000523 sample Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000691 measurement method Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Electromagnetism (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/937,158 US4755049A (en) | 1986-12-02 | 1986-12-02 | Method and apparatus for measuring the ion implant dosage in a semiconductor crystal |
| US937158 | 1986-12-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63151042A true JPS63151042A (ja) | 1988-06-23 |
| JPH0318340B2 JPH0318340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-03-12 |
Family
ID=25469577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62293041A Granted JPS63151042A (ja) | 1986-12-02 | 1987-11-19 | 半導体結晶におけるイオン注入量測定方法 |
Country Status (4)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5074669A (en) * | 1989-12-12 | 1991-12-24 | Therma-Wave, Inc. | Method and apparatus for evaluating ion implant dosage levels in semiconductors |
| US5185273A (en) * | 1991-09-30 | 1993-02-09 | Motorola, Inc. | Method for measuring ions implanted into a semiconductor substrate |
| TW394977B (en) * | 1998-04-21 | 2000-06-21 | United Microelectronics Corp | A recycle method for the monitor control chip |
| US7029933B2 (en) * | 2004-06-22 | 2006-04-18 | Tech Semiconductor Singapore Pte. Ltd. | Method for monitoring ion implant doses |
| US7250313B2 (en) * | 2004-09-30 | 2007-07-31 | Solid State Measurements, Inc. | Method of detecting un-annealed ion implants |
| KR100699889B1 (ko) * | 2005-12-29 | 2007-03-28 | 삼성전자주식회사 | 가변적인 이온주입 조건이 수반되는 반도체 소자의 제조방법 |
| US8415620B2 (en) * | 2010-01-11 | 2013-04-09 | International Business Machines Corporation | Determining doping type and level in semiconducting nanostructures |
| US8581204B2 (en) * | 2011-09-16 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for monitoring ion implantation |
| US10019565B2 (en) | 2015-12-17 | 2018-07-10 | Honeywell Federal Manufacturing & Technologies, Llc | Method of authenticating integrated circuits using optical characteristics of physically unclonable functions |
| US11041827B2 (en) * | 2019-04-12 | 2021-06-22 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
-
1986
- 1986-12-02 US US06/937,158 patent/US4755049A/en not_active Expired - Fee Related
-
1987
- 1987-09-30 KR KR870010951A patent/KR880008417A/ko not_active Withdrawn
- 1987-11-19 JP JP62293041A patent/JPS63151042A/ja active Granted
- 1987-11-25 CA CA000552742A patent/CA1262291A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| KR880008417A (ko) | 1988-08-31 |
| JPH0318340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-03-12 |
| CA1262291A (en) | 1989-10-10 |
| US4755049A (en) | 1988-07-05 |
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