JPH0318340B2 - - Google Patents
Info
- Publication number
- JPH0318340B2 JPH0318340B2 JP62293041A JP29304187A JPH0318340B2 JP H0318340 B2 JPH0318340 B2 JP H0318340B2 JP 62293041 A JP62293041 A JP 62293041A JP 29304187 A JP29304187 A JP 29304187A JP H0318340 B2 JPH0318340 B2 JP H0318340B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor crystal
- harmonic
- amount
- ion implantation
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 37
- 238000005468 ion implantation Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000001427 coherent effect Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims 4
- 230000005855 radiation Effects 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 22
- 238000005259 measurement Methods 0.000 description 13
- 239000000523 sample Substances 0.000 description 11
- 238000000691 measurement method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Electromagnetism (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Measurement Of Radiation (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/937,158 US4755049A (en) | 1986-12-02 | 1986-12-02 | Method and apparatus for measuring the ion implant dosage in a semiconductor crystal |
| US937158 | 1986-12-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63151042A JPS63151042A (ja) | 1988-06-23 |
| JPH0318340B2 true JPH0318340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-03-12 |
Family
ID=25469577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62293041A Granted JPS63151042A (ja) | 1986-12-02 | 1987-11-19 | 半導体結晶におけるイオン注入量測定方法 |
Country Status (4)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5074669A (en) * | 1989-12-12 | 1991-12-24 | Therma-Wave, Inc. | Method and apparatus for evaluating ion implant dosage levels in semiconductors |
| US5185273A (en) * | 1991-09-30 | 1993-02-09 | Motorola, Inc. | Method for measuring ions implanted into a semiconductor substrate |
| TW394977B (en) * | 1998-04-21 | 2000-06-21 | United Microelectronics Corp | A recycle method for the monitor control chip |
| US7029933B2 (en) * | 2004-06-22 | 2006-04-18 | Tech Semiconductor Singapore Pte. Ltd. | Method for monitoring ion implant doses |
| US7250313B2 (en) * | 2004-09-30 | 2007-07-31 | Solid State Measurements, Inc. | Method of detecting un-annealed ion implants |
| KR100699889B1 (ko) * | 2005-12-29 | 2007-03-28 | 삼성전자주식회사 | 가변적인 이온주입 조건이 수반되는 반도체 소자의 제조방법 |
| US8415620B2 (en) * | 2010-01-11 | 2013-04-09 | International Business Machines Corporation | Determining doping type and level in semiconducting nanostructures |
| US8581204B2 (en) | 2011-09-16 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for monitoring ion implantation |
| US10019565B2 (en) | 2015-12-17 | 2018-07-10 | Honeywell Federal Manufacturing & Technologies, Llc | Method of authenticating integrated circuits using optical characteristics of physically unclonable functions |
| US11041827B2 (en) * | 2019-04-12 | 2021-06-22 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
-
1986
- 1986-12-02 US US06/937,158 patent/US4755049A/en not_active Expired - Fee Related
-
1987
- 1987-09-30 KR KR870010951A patent/KR880008417A/ko not_active Withdrawn
- 1987-11-19 JP JP62293041A patent/JPS63151042A/ja active Granted
- 1987-11-25 CA CA000552742A patent/CA1262291A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4755049A (en) | 1988-07-05 |
| JPS63151042A (ja) | 1988-06-23 |
| KR880008417A (ko) | 1988-08-31 |
| CA1262291A (en) | 1989-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6211961B1 (en) | Optical method for the characterization of the electrical properties of semiconductors and insulating films | |
| US6323951B1 (en) | Apparatus and method for determining the active dopant profile in a semiconductor wafer | |
| KR100443856B1 (ko) | 반도체샘플검사장치및그방법 | |
| US6052185A (en) | Method and apparatus for measuring the concentration of ions implanted in semiconductor materials | |
| US5042952A (en) | Method and apparatus for evaluating surface and subsurface and subsurface features in a semiconductor | |
| US4854710A (en) | Method and apparatus for evaluating surface and subsurface features in a semiconductor | |
| US4952063A (en) | Method and apparatus for evaluating surface and subsurface features in a semiconductor | |
| JPH0318340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP2003523628A (ja) | 半導体の少数キャリアの寿命を測定する表面パッシベーション方法および装置 | |
| US7499168B2 (en) | Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications | |
| JP3730289B2 (ja) | 半導体ウェーハの欠陥測定方法及び同装置 | |
| JPS5840332B2 (ja) | 半導体のアニ−リング処理における制御方法 | |
| JPH01179315A (ja) | レーザアニール装置 | |
| JPH04289442A (ja) | ライフタイム測定方法 | |
| JP2001500976A (ja) | 半導体材料の中に注入されたイオンの濃度を測定するための改善された方法及び装置 | |
| JPH04104042A (ja) | シリコン中の酸素濃度測定方法 | |
| JPH0921756A (ja) | 半導体ウェハの欠陥評価装置 | |
| Bailey et al. | The mechanism of modulated optical reflectance imaging of dislocations in silicon | |
| KR20050008222A (ko) | 이온 도즈량 측정 장치 | |
| JPS63307654A (ja) | イオンビ−ム照射装置 | |
| JPH06138058A (ja) | 半導体ウエハのエネルギ準位測定装置 | |
| Chen et al. | Subnanosecond Time-Resolved Electron Diffraction from Thin Crystalline Gold Films | |
| El Rhaleb et al. | Analysis of bulk sample photothermal response by time resolved ellipsometry | |
| JPH08248005A (ja) | 光熱変位測定装置 | |
| JPH04280649A (ja) | 半導体中不純物などの測定方法 |