JPS63145334U - - Google Patents

Info

Publication number
JPS63145334U
JPS63145334U JP3589988U JP3589988U JPS63145334U JP S63145334 U JPS63145334 U JP S63145334U JP 3589988 U JP3589988 U JP 3589988U JP 3589988 U JP3589988 U JP 3589988U JP S63145334 U JPS63145334 U JP S63145334U
Authority
JP
Japan
Prior art keywords
electrode
gate electrode
independent
semiconductor elements
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3589988U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3589988U priority Critical patent/JPS63145334U/ja
Publication of JPS63145334U publication Critical patent/JPS63145334U/ja
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aは従来の半導体装置の平面図、同図b
は図aのA―A断面図、第2図は本考案の一実施
例の平面図、第3図は本考案の半導体装置を実際
に使用する場合の使用例を示す平面図である。 1……容器、1a……メタルベース、1b……
枠体、2……ゲート電極端子、3……ドレイン電
極端子、4……半導体素子、5……金属細線、6
d……ドレイン側金属膜、6G……ゲート側金属
膜、7……抵抗、8……入力回路部、9……出力
回路部、10……半導体装置。
Fig. 1a is a plan view of a conventional semiconductor device, and Fig. 1b is a plan view of a conventional semiconductor device.
2 is a plan view of an embodiment of the present invention, and FIG. 3 is a plan view showing an example of actual use of the semiconductor device of the present invention. 1...Container, 1a...Metal base, 1b...
Frame body, 2... Gate electrode terminal, 3... Drain electrode terminal, 4... Semiconductor element, 5... Metal thin wire, 6
d...Drain side metal film, 6G...Gate side metal film, 7...Resistor, 8...Input circuit section, 9...Output circuit section, 10...Semiconductor device.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ゲート電極とドレイン電極とを有する電界効果
トランジスタからなる複数の半導体素子と、これ
ら半導体素子を共に収容する容器と、前記ゲート
電極およびドレイン電極にそれぞれ接続されて前
記容器外に導出された複数の電極端子とを備え、
これら電極端子のうちの前記ゲート電極に接続さ
れた電極端子は各素子毎に独立であつて、かつ、
この独立電極端子間は抵抗体により接続されてい
ることを特徴とする半導体装置。
A plurality of semiconductor elements each consisting of a field effect transistor having a gate electrode and a drain electrode, a container accommodating these semiconductor elements together, and a plurality of electrodes each connected to the gate electrode and the drain electrode and led out of the container. Equipped with a terminal,
Of these electrode terminals, the electrode terminal connected to the gate electrode is independent for each element, and
A semiconductor device characterized in that the independent electrode terminals are connected by a resistor.
JP3589988U 1988-03-17 1988-03-17 Pending JPS63145334U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3589988U JPS63145334U (en) 1988-03-17 1988-03-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3589988U JPS63145334U (en) 1988-03-17 1988-03-17

Publications (1)

Publication Number Publication Date
JPS63145334U true JPS63145334U (en) 1988-09-26

Family

ID=30845809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3589988U Pending JPS63145334U (en) 1988-03-17 1988-03-17

Country Status (1)

Country Link
JP (1) JPS63145334U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111066A (en) * 1975-03-26 1976-10-01 Nec Corp High-output semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111066A (en) * 1975-03-26 1976-10-01 Nec Corp High-output semiconductor device

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