JPS63145334U - - Google Patents
Info
- Publication number
- JPS63145334U JPS63145334U JP3589988U JP3589988U JPS63145334U JP S63145334 U JPS63145334 U JP S63145334U JP 3589988 U JP3589988 U JP 3589988U JP 3589988 U JP3589988 U JP 3589988U JP S63145334 U JPS63145334 U JP S63145334U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate electrode
- independent
- semiconductor elements
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 description 4
Landscapes
- Junction Field-Effect Transistors (AREA)
Description
第１図ａは従来の半導体装置の平面図、同図ｂ
は図ａのＡ―Ａ断面図、第２図は本考案の一実施
例の平面図、第３図は本考案の半導体装置を実際
に使用する場合の使用例を示す平面図である。
１……容器、１ａ……メタルベース、１ｂ……
枠体、２……ゲート電極端子、３……ドレイン電
極端子、４……半導体素子、５……金属細線、６
ｄ……ドレイン側金属膜、６Ｇ……ゲート側金属
膜、７……抵抗、８……入力回路部、９……出力
回路部、１０……半導体装置。
Fig. 1a is a plan view of a conventional semiconductor device, and Fig. 1b is a plan view of a conventional semiconductor device.
2 is a plan view of an embodiment of the present invention, and FIG. 3 is a plan view showing an example of actual use of the semiconductor device of the present invention. 1...Container, 1a...Metal base, 1b...
Frame body, 2... Gate electrode terminal, 3... Drain electrode terminal, 4... Semiconductor element, 5... Metal thin wire, 6
d...Drain side metal film, 6G...Gate side metal film, 7...Resistor, 8...Input circuit section, 9...Output circuit section, 10...Semiconductor device.
Claims (1)
トランジスタからなる複数の半導体素子と、これ
ら半導体素子を共に収容する容器と、前記ゲート
電極およびドレイン電極にそれぞれ接続されて前
記容器外に導出された複数の電極端子とを備え、
これら電極端子のうちの前記ゲート電極に接続さ
れた電極端子は各素子毎に独立であつて、かつ、
この独立電極端子間は抵抗体により接続されてい
ることを特徴とする半導体装置。 A plurality of semiconductor elements each consisting of a field effect transistor having a gate electrode and a drain electrode, a container accommodating these semiconductor elements together, and a plurality of electrodes each connected to the gate electrode and the drain electrode and led out of the container. Equipped with a terminal,
Of these electrode terminals, the electrode terminal connected to the gate electrode is independent for each element, and
A semiconductor device characterized in that the independent electrode terminals are connected by a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3589988U JPS63145334U (en) | 1988-03-17 | 1988-03-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3589988U JPS63145334U (en) | 1988-03-17 | 1988-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63145334U true JPS63145334U (en) | 1988-09-26 |
Family
ID=30845809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3589988U Pending JPS63145334U (en) | 1988-03-17 | 1988-03-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63145334U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111066A (en) * | 1975-03-26 | 1976-10-01 | Nec Corp | High-output semiconductor device |
-
1988
- 1988-03-17 JP JP3589988U patent/JPS63145334U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111066A (en) * | 1975-03-26 | 1976-10-01 | Nec Corp | High-output semiconductor device |
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