JPS63140662U - - Google Patents
Info
- Publication number
- JPS63140662U JPS63140662U JP3207387U JP3207387U JPS63140662U JP S63140662 U JPS63140662 U JP S63140662U JP 3207387 U JP3207387 U JP 3207387U JP 3207387 U JP3207387 U JP 3207387U JP S63140662 U JPS63140662 U JP S63140662U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type semiconductor
- electrodes
- semi
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の一実施例の断面図および濃度
分布、第２図は従来例である。 １，７……半絶縁性基板、２，８……Ｎ型半導
体層、３，４，９，１０……Ｎ＋型半導体層、５
，６，１１，１２……電極。
分布、第２図は従来例である。 １，７……半絶縁性基板、２，８……Ｎ型半導
体層、３，４，９，１０……Ｎ＋型半導体層、５
，６，１１，１２……電極。
Claims (1)
- 半絶縁性基板上に、横方向にＮ＋ＮＮ＋半導体
層を形成し、両端のＮ＋型半導体層に電極を設け
てなる構造であつて、前記Ｎ型半導体層の不純物
濃度が横方向に段階的に変化していることを特徴
とするガン効果半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3207387U JPS63140662U (ja) | 1987-03-04 | 1987-03-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3207387U JPS63140662U (ja) | 1987-03-04 | 1987-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63140662U true JPS63140662U (ja) | 1988-09-16 |
Family
ID=30838397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3207387U Pending JPS63140662U (ja) | 1987-03-04 | 1987-03-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63140662U (ja) |
-
1987
- 1987-03-04 JP JP3207387U patent/JPS63140662U/ja active Pending