JPS63137166A - Sputtering apparatus - Google Patents

Abstract

PURPOSE:To improve uniform coverage of the step shaped substrate by sputtering, by perpendicularly placing a substrate supporting jig at the outside of the principal surface of a flat plate-shaped target, by enabling the jig to freely rotate and by depositing particles generated by sputtering on a substrate at an angle. CONSTITUTION:A substrate supporting jig 3 is rotatably placed at the outside of the principal surface of a flat plate-shaped target 1 and at a position away from the principal surface in the sputtering direction so that the principal surface of the target 1 meets at right angles to a normal line of the principal surface of a substrate 2 on which a film is formed by sputtering. Many particles 4 generated by sputtering are deposited on the principal surface of the substrate 2 at an angle and a film having satisfactory step coverage is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus, and particularly to the structure of mounting a substrate support jig.

[Conventional technology]

A conventional sputtering apparatus has a structure in which a substrate support jig 53 is arranged so that the main sputtering surface 51a of the flat target 51 and the surface 52a of the substrate 52 are parallel to each other, as shown in FIG. 4(a). Alternatively, as shown in FIG. 4(b), the target 54 is configured in a ring shape with a triangular cross section,
There is a structure in which the main sputtering surface 54a of the target 54 is inclined with respect to the substrate 55 supported by a flat substrate support jig 56. Furthermore, in the facing target sputtering method, as shown in FIG. 4(c), the target 57 and the target 5
8 are arranged facing each other, and a substrate 59 is fixed to the outside thereof with a substrate support jig 60.

[Problem that the invention seeks to solve]

In recent years, semiconductor devices have become more integrated, and the ratio of the height to width (hereinafter referred to as aspect ratio) of a contact opening formed in a substrate is approaching 1 and is about to increase further. Conventionally, when producing a sputtered film on the surface of a substrate of a semiconductor device, many sputtered particles 61 are incident on the substrate surface in the normal direction as shown in FIGS. 4(a) and 4(b). was deposited in the normal direction. Therefore, in the openings with a large aspect ratio, the deposition rate of the sputtered particles 61 in the diagonal direction with respect to the main surface of the substrate is slower than in the normal direction.
Wiring breaks may occur at stepped portions. In addition, in the facing target sputtering method shown in FIG. 4(c), more sputtered particles 61 are deposited in the diagonal direction with respect to the main surface of the substrate, which has the advantage of good step coverage.
Furthermore, since the sputtered particles 61 are incident on the substrate 59 only in the direction of the targets 57 and 58, it is difficult to improve step coverage in other directions.

SUMMARY OF THE INVENTION An object of the present invention is to provide a new sputtering apparatus that eliminates the above-mentioned drawbacks.

[Differences between the invention and the prior art]

In contrast to the conventional sputtering apparatus described above, the present invention has an original content of depositing more sputtered particles in an oblique direction to the main surface of the substrate to obtain a sputtered film with good step coverage.

[Means for solving problems]

The sputtering apparatus of the present invention is a sputtering apparatus having a flat target, at a position outside the main sputtering surface of the target and away from the main sputtering surface in the sputtering direction.
This method is characterized in that a substrate support jig is rotatably installed in a direction in which normal lines to the main sputtering surface of the target and the main surface of the substrate on which the sputtered film is to be formed intersect at right angles.

[Effect]

FIG. 2(b) shows a cross-sectional view of the substrate 21 when sputtering is performed on a substrate with a step shape on the surface using a conventional sputtering device.
Shown below. In this case, since more sputtered particles 23 are deposited in the direction perpendicular to the main surface of the substrate, the sputtered film 22 becomes thinner at the stepped portion 22a, and in the worst case, the film 22 is interrupted. On the other hand, a cross-sectional view of the substrate 21 when sputtering is performed using the sputtering apparatus of the present invention is shown in FIG. 2(a). In this case, more sputtered particles 23 are incident obliquely to the main surface of the substrate, and since the substrate 21 rotates, the particles 1!
2 has the effect of preventing it from becoming thinner.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

(Example 1) In FIGS. 1(a) and 1(b), the target 1 is installed horizontally at the bottom of the apparatus main body M, and is placed outside the main sputtering surface 1a of the target 1 and in the sputtering direction from the main sputtering surface 1a. On the side wall of the device main body M at a remote location.

Target 1 spatter main? A substrate support jig 3 is supported on a shaft 3a and is rotatably installed in a direction in which the normal to 1IyIa and the main surface 2a of the substrate 2 on which a sputtered film is to be formed intersect at right angles.

In the embodiment, a substrate 2 is mounted on a substrate support jig 3, and the substrate 2 is placed vertically outside the flat target 1.

Sputtering is performed while rotating the substrate support jig 3. As a result, many sputtered particles 4 are obliquely incident on the substrate surface, so that a sputtered film with good coverage can be formed even on steps with a large aspect ratio on the substrate surface. I can do it.

(Example 2) Figure 3 (a) is a sectional view showing Example 2 of the present invention, (b)
is the same plan view. The flat target 41 has a circular shape, and six substrate supporting jigs 43 are rotatably arranged on the outside thereof while being held in a vertical position. The substrate 42 is supported by each substrate support jig 43 and sputtered while rotating. In this embodiment, six sheets of Fi 42 can be sputtered at one time, so there is an advantage that efficient sputtering can be performed.

It is clear that the present invention can produce similar effects not only on openings but also on stepped portions caused by wiring materials and the like.

〔Effect of the invention〕

As explained above, the present invention provides a method for forming a sputtered main surface and a sputtered film on a substrate main surface at a position outside the sputtering main surface of the target and away from the sputtering main surface in the sputtering direction in a sputtering apparatus having a flat target. Place the target and the board so that the lines intersect at right angles,
Since the substrate support jig including the substrate is rotated, a sputtered film with good coverage can be produced even in openings with a large aspect ratio on the substrate surface with a simple structure.

[Brief explanation of the drawing]

FIG. 1(a) is a sectional view showing Embodiment 1 of the present invention, FIG. 1(b)
2(a) is an open plan view, FIG. 2(a) is a sectional view of a semiconductor device contact hole formed by the sputtering apparatus of the present invention, and FIG. 2(b) is an open plan view.
3(a) is a sectional view showing Embodiment 2 of the present invention, FIG. 3(b) is a plan view thereof, and FIG. 4(a), ( b)
. (c) is a sectional view of a conventional sputtering device. l, 41...Target, 2, 42...Substrate, 3,
43... Substrate support jig, 4... Sputtered particles

Claims (1)

[Claims] (1) In a sputtering apparatus having a flat target, a method is applied to the main sputtering surface of the target and the main surface of the substrate on which a sputtered film is to be formed, at a position outside the main sputtering surface of the target and away from the main sputtering surface in the sputtering direction. A sputtering apparatus characterized in that a substrate support jig is rotatably installed in a direction in which lines intersect at right angles.