JPH04162613A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To form a uniform interconnection layer even at a stepped part in order to prevent an interconnection from being cut and becoming defective by a method wherein the interconnection layer is formed while a wafer stand is tilted in such a way that a wafer is tilted at a desired angle with reference to a vapor deposition source. CONSTITUTION:At this apparatus, a bell jar 2 is installed in the center of a base body 1 and a revolving bell jar 3 which is turned by means of a gear 7 which is turned by using a driving motor 6 installed at the lower part of the base body 1 is installed at its inside. A semiconductor wafer stand 4 is formed so as to be tilted at a desired angle; a semiconductor wafer 5 placed on the wafer stand 4 is faced with a vapor deposition source in such a way that it is tilted at the tilted angle. As a result, a vapor deposition metal which is advanced straight from the vapor deposition source is vapor-deposited on the semiconductor wafer stand at a certain impinging angle. Since the wafer placed on the wafer stand is set at the certain tilted angle with reference to the vapor deposition source, the vapor deposition metal is not impinged perpendicularly at a stepped part. The metal evaporated from the vapor deposition source can be applied sufficiently even to the stepped part on the semiconductor wafer on which a vapor deposition film is formed. As a result, a uniform film can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and particularly to a technique that is effective when applied to the formation of aluminum wiring layers, etc. in surface treatment of semiconductor wafers.

[Conventional technology]

There are various surface treatment processes for semiconductor wafers, and among them there is a process for forming a desired wiring layer film on the surface of a semiconductor wafer. In such a process, wiring materials such as AL are usually formed on the wafer surface by vapor deposition.

The equipment used in this process is such that the wafer is placed on a wafer table that is attached to a revolving table and configured to rotate, and the evaporated metal is evaporated from a evaporation source provided above or below the wafer. A vapor deposited film is formed on a wafer on a wafer table.

An overview of such a device is given in ``LSI Design and Manufacturing Technology,'' supervised by Michitada Morisue, published September 30, 1986, published by Denki Shoin Co., Ltd., pages 340 to 344.

[Problem to be solved by the invention]

In the above-mentioned technology, the evaporation source is provided at a single location, and that position is opposite to the location where the semiconductor wafer is placed, and the evaporation source and the semiconductor wafer are generally in parallel positions. be.

When vapor deposition is performed using such an apparatus, the metal vapor deposited from the vapor deposition source has a straight propagation property, so that the vapor-deposited metal is incident at almost right angles. For this reason, if the surface of the semiconductor wafer is flat, a uniform deposited film will be formed without any particular problem, but if the surface has already undergone various processes and has uneven parts, the deposited film will be thinner at the stepped parts. parts are formed.

As a result, when a vapor deposited film is patterned and used as a wiring layer, there is a problem in that poor cutting of the wiring layer due to electromigration or the like occurs.

An object of the present invention is to form a uniform wiring layer even at differences in level in order to prevent the occurrence of such poor wiring cutting.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in a semiconductor manufacturing apparatus comprising a vapor deposition source and a semiconductor wafer stand configured to rotate, the wafer stand is formed to be inclined so that the wafer is inclined at a desired angle with respect to the vapor deposition source. This is a characteristic semiconductor manufacturing equipment.

[Effect]

According to the above-mentioned means, since the wafer placed on the wafer stand can be set at a certain angle of inclination with respect to the evaporation source, the evaporated metal will not be incident at right angles on the stepped portion, and the evaporated film Since metal evaporated from the evaporation source can be sufficiently attached to the step portion on the semiconductor wafer where the wafer is formed, a uniform film can be formed, and a semiconductor device with fewer disconnection defects can be provided.

[Embodiment 1] FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to a first embodiment of the present invention, and FIG. 2 is a side view of a wafer stand of the semiconductor manufacturing apparatus shown in FIG. 1.

In the semiconductor manufacturing apparatus of this embodiment, a bell jar 2 is provided at the center of a base 1, and a revolving bell jar 3 is provided inside the bell jar 2, which is rotated by a gear 7 that is rotated by a drive motor 6 provided at the bottom of the base 1. There is. This revolving bell jar 3 is provided with a plurality of wafer stands 4 on its main surface. The wafer table 4 is configured to rotate on its own axis as a revolving bell jar rotates by a mechanism not shown. Regarding this technique, a known technique can be used, such as a combination of planetary gears between a drive gear and an outer peripheral gear, and a wafer stand provided on the planetary gears.

A vapor deposition source 8 is provided inside the revolving bell jar 3 and faces each wafer 5 .

Next, the wafer table 4 will be explained.

As shown in FIG. 2, the semiconductor wafer stand 4 in this semiconductor manufacturing apparatus is formed to be inclined at a desired angle. Therefore, the semiconductor wafer 5 placed on the wafer stand 4 faces the evaporation source at an angle of inclination. As a result, the evaporated metal traveling straight from the evaporation source has a certain angle of incidence and is deposited on the semiconductor wafer stage. In this embodiment, the semiconductor wafer stand 4
The upper inclination angle was set at 15° to 30° with respect to the deposition source.

[Embodiment 2] FIG. 3 is a sectional view of a semiconductor manufacturing apparatus which is a second embodiment of the present invention.

In the semiconductor manufacturing apparatus in this embodiment, a bell jar 10 is provided in the center of a base 9, and a revolution table (not shown), in which a wafer table 11 having an autorotation function is attached, is attached to the lower part of the base 9 by a support shaft. The drive motor 14 is attached to the drive motor 14. As for the rotation mechanism of this wafer table 4, a known technique such as the one using a drive gear, an outer peripheral gear, and a planetary gear provided therebetween as shown in the first embodiment can be used.

Further, a vapor deposition source 9 is provided at the top of the bell jar 2.
Desired evaporated metal can be supplied to the urchin/112 on the wafer stand 11 provided at the bottom.

In this embodiment as well, the wafer stand 4 is placed at one point relative to the evaporation source.
It is set to incline within 5° to 30°.

[Embodiment 3] FIG. 5 shows the configuration of a wafer stand of a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

In this embodiment, the wafer stand 18 is attached via a connecting body 17 to a support shaft 16 whose driving source is a motor 22 for rotation. The wafer stand 18 is configured to be able to swing freely, and includes an eccentric wheel 20 attached below the wafer stand 18 and a support rod 21 attached to the wafer stand 18 so as to be able to move up and down with a spring.
This makes it possible to swing the desired angle. With this configuration, the wafer table can be swung, and the evaporated metal can be deposited while tilting at a desired angle with respect to the stepped portion of the wafer placed on the wafer table.

According to this embodiment, it is possible to change the inclination angle to a desired angle simply by replacing the eccentric wheel 20.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

That is, in the vapor deposition process, since the vapor deposition can be performed at a desired angle of inclination with respect to the step portion formed on the semiconductor wafer, the effect that the deposited film does not become thinner even at the step portion can be obtained.

Furthermore, even when the vapor deposited film of a semiconductor device manufactured using the semiconductor manufacturing apparatus of the present invention is used for a wiring layer, etc., it does not become thin at stepped portions, so disconnection defects are reduced and highly reliable semiconductors can be manufactured. You can get the equipment.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a side view showing a wafer stand of the semiconductor manufacturing device shown in FIGS. 1 and 2, and FIG. A schematic sectional view of a semiconductor manufacturing apparatus according to a second embodiment of the invention, FIG. 4 shows the configuration of a wafer stand of a semiconductor manufacturing apparatus according to a third embodiment of the invention. 1.9... Base body, 2, 1o... Bell jar, 3. Revolution bell jar, 4, 11.18... Wafer stand, 4a, 18
a...Wafer fixture, 5,12.19...Wafer, 6.
14... Drive motor, 7... Drive gear, 8... Evaporation source, 15... Revolution table, 16... Support shaft, 17... Connection body, 20... Eccentric gear, 21... Support Bar, 22...
・Rotation Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] 1. In a semiconductor manufacturing apparatus comprising an evaporation source and a semiconductor wafer stand configured to rotate, the wafer stand is formed to be inclined so that the wafer is inclined at a desired angle with respect to the evaporation source. Features of semiconductor manufacturing equipment.