JPH08319560A - Vacuum deposition device and vacuum deposition method - Google Patents

Abstract

PURPOSE: To provide a vacuum deposition device in which the mounting of a substrate provided with a vapor-deposited film such as a semiconductor wafer is easy and secure and a vapor-deposited film can be formed without breaking and also without generating irregularity and to provide a vacuum deposition method. CONSTITUTION: This device is constituted of a caterpillar 4 in which susceptors 3 mounted with a substrate 10 provided with a vapor-deposited film are plurally connected, a ring 5 in which the caterpillar 4 is rotated along the inner circumference and the outer circumference is provided with a rotary shaft 5a along the radial direction of the same inner circumference and a caterpillar rotating means rotating the caterpillar. The susceptor 3 has a holder 3a for the substrate 10, and the holder 3a holds the substrate 10 when the caterpillar 4 does not rotated and is detached from the substrate 10 when the caterpillar 4 is rotated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus for vacuum vapor depositing a metal material or the like on a surface of a substrate such as a semiconductor wafer and a vapor deposition method thereof. More specifically, the present invention relates to a vacuum vapor deposition apparatus and a vapor deposition method capable of securely holding a substrate without applying an excessive force and performing vapor deposition uniformly on the surface of the substrate.

[0002]

2. Description of the Related Art Conventionally, for example, when an electrode film such as aluminum or tungsten is formed on a semiconductor wafer in the process of manufacturing a semiconductor device, a vacuum vapor deposition device as shown in a simplified configuration diagram in FIG. It is usually done using. This vacuum vapor deposition apparatus is provided with a material container 27 such as a crucible or a boat containing raw materials such as aluminum and tungsten to be vapor-deposited in a central portion of a vacuum furnace, and a plurality of planetaries 21 and 22 are provided above the material container 27. It is mounted so as to rotate (revolve) about 27. Each planetary 21 and 22 is formed in a curved shape, and a plurality of semiconductor wafers 30 are attached to the inner peripheral surface thereof.
It is configured to rotate around a and 21b. As shown in FIGS. 3B and 3C, the semiconductor wafer 30 is attached to each planetary 21, 22 while one end of the semiconductor wafer 30 is supported by the hook 23 and one end of the semiconductor wafer 30 is recessed in the planetary 21, 22. The other end of the elastic wire 25 fixed in 24 is pressed against the hook 23 side by the orientation flat (orientation flat) 30a portion of the semiconductor wafer 30 to hold it. This is because when a fixture for fixing the semiconductor wafer comes to the surface of the semiconductor wafer 30, a vapor deposition film is not formed on that portion and cannot be used, so that the surface of the semiconductor wafer 30 is not covered as much as possible. Each planetary 21,
This is because the semiconductor wafer 30 needs to be held downward so that it does not drop, because the semiconductor wafer 22 faces the material container 27 containing the raw material to be vapor-deposited.

[0003]

As described above, in the conventional vacuum vapor deposition apparatus using a planetary, a substrate for forming a vapor deposition film such as a semiconductor wafer is fixed to the planetary,
Although it is performed by using a wire having elasticity, if the fixing force is too strong, an excessive force is applied to a substrate such as a semiconductor wafer to cause damage. On the other hand, if the fixing force is too weak, a substrate such as a semiconductor wafer will fall and be damaged during vapor deposition.
Therefore, there is a problem that the work efficiency is poor and the yield cannot be improved.

Further, in order to attach a substrate such as a semiconductor wafer to the planetary, since the spring property of the wire is utilized as described above, it can be done only by human work and cannot be automated, which causes a cost increase. Has become.

The present invention solves such a problem and makes it easy to attach a substrate on which a vapor deposition film such as a semiconductor wafer is provided,
Moreover, it is an object of the present invention to provide a vacuum vapor deposition apparatus and a vacuum vapor deposition method capable of forming a vapor deposition film without fail and without causing damage.

[0006]

A vacuum vapor deposition apparatus according to the present invention comprises a caterpillar to which a plurality of susceptors for mounting a substrate on which a vapor deposition film is mounted are connected, and the caterpillar is rotated along the inner periphery and the inner periphery is rotated. A ring provided with a rotation shaft on the outer circumference along the radial direction of the, and a caterpillar rotating means for rotating the caterpillar along the inner circumference of the ring,
The susceptor has a holder for the substrate, and the holder is provided so as to hold the substrate when the caterpillar is not rotating and separate from the substrate when the caterpillar is rotating. There is.

First ring rotating means for rotating the rotating shaft of the ring around the rotating shaft; and first ring rotating means for rotating the ring in a plane perpendicular to the central axis of the inner circumference of the ring. It is preferable to further include two ring rotating means because a vapor deposition film having a uniform thickness can be obtained even if the substrate surface has an uneven surface.

In the vacuum vapor deposition method of the present invention, (a) a substrate provided with a vapor deposition film on each susceptor of a plurality of susceptors connected to each other is held by a holder provided on the susceptor, and (b) the caterpillar is held. After mounting on the inner peripheral surface of a ring that can rotate on the inner peripheral surface, the caterpillar is rotated along the inner peripheral surface in a vacuum furnace, and (c) a centrifugal force acts on the caterpillar by the rotation of the caterpillar. After that, the holder is released from the substrate, and (d) the raw material for forming the vapor-deposited film is placed in the center of the ring and vaporized by evaporating.

When the raw material is vapor-deposited, the ring is rotated about a rotary shaft provided along the radial direction on the outer peripheral side of the ring, and the ring is rotated about the central axis of the ring. It is preferable to deposit the raw material on the substrate while applying rotation in a vertical plane to obtain a deposited film having a uniform thickness.

[0010]

According to the vacuum vapor deposition apparatus of the present invention, a plurality of susceptors having a holder for holding a substrate on which a vapor deposition film such as a semiconductor wafer is formed are connected to form a caterpillar, which can be rotated in a ring. When the susceptor stops without rotating, the holder provided on the susceptor holds the substrate lightly and securely, and when the susceptor starts rotating in the ring, the centrifugal force causes the substrate to be pushed toward the inner peripheral surface of the ring and held. The holder is then released. Therefore, the holder can be released during vapor deposition while the caterpillar is rotating, and the material evaporated from the material container is uniformly deposited on the entire surface of the substrate. After the film formation is finished, the substrate is lightly held by the holding tool again, and then the rotation of the caterpillar can be stopped, so that the holding tool can prevent the substrate from falling. As a result, the holder lightly holds the substrate only when the caterpillar is not rotating, so that no force is applied to the substrate and the substrate is not damaged or warped.

According to the vacuum deposition method of the present invention, the substrate is lightly held by each holder on each susceptor of the caterpillar, and then the caterpillar is rotated along the inner circumference of the ring, and after the centrifugal force acts, the holder is held. Since it is released, there is no influence of the holder during vapor deposition, and a uniform vapor deposition film can be obtained over the entire surface of the substrate. In addition, it is not necessary to press the substrate with a strong force to hold it, and since it is sufficient to prevent the substrate from dropping when stationary, the substrate is not damaged.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a vacuum vapor deposition apparatus and a vacuum vapor deposition method of the present invention will be described with reference to the drawings.

FIG. 1 is an explanatory view of a main part of an embodiment of a vacuum vapor deposition apparatus of the present invention, FIG. 2 (a) is an explanatory view of a caterpillar and a ring portion thereof, and FIG. 2 (b) is a susceptor constituting the caterpillar. It is a figure which shows the state which hold | maintained the board | substrates, such as a semiconductor wafer.

In the vacuum vapor deposition apparatus of the present invention, the susceptor 3 holding the substrate 10 such as a semiconductor wafer is connected in a circular shape to form the caterpillar 4, and the inner circumference of the shallow cylindrical ring 5 can be rotated. It is installed. The caterpillar 4 is, for example, a roller 6 provided on the inner circumference of the ring 5.
The inside of the ring 5 can be rotated at a rotational speed of about 100 rpm in a certain direction by a caterpillar rotating means for rotating the motor by a motor (not shown). On the outer side of the ring 5, a rotary shaft 5a is provided extending on both sides along the radial direction of the ring.

Each susceptor 3 forming the caterpillar 4 is
As shown in FIG. 2B, the substrate 1 on which the vapor deposition film is provided
0, for example, for holding a semiconductor wafer, holding device 3
It is held by a hook that is a. This holder 3a
2B has a structure in which a substrate 10 such as a semiconductor wafer is inserted from above and stopped on both sides of the lower side, as shown in FIG. 2B, and no force is applied to the substrate 10. The holder 3a is configured to be movable to the side opposite to the substrate 10 (arrow A in FIG. 2B), and the caterpillar 4 rotates to press the substrate 10 against the susceptor 3 by the centrifugal force of the substrate 10. In the held state, the holder 3a is moved to the arrow A side and released from the substrate 10.

The shallow cylindrical ring 5 is provided with rotating shafts 5a on both sides outside along the radial direction of the ring 5 so that the ring 5 can be rotated around the rotating shaft 5a. It is rotated by a first ring rotating means consisting of a motor or the like. The ring 5 is further configured so as to be rotatable about a center axis of the ring 5 in a plane perpendicular to the center axis (arrows B and C in FIG. 2A), and is composed of a motor (not shown) or the like. It is oscillatedly rotated by the ring rotating means.

Next, a method of performing vacuum vapor deposition with this vacuum vapor deposition apparatus will be described.

First, the caterpillar 4 is leaned against the side of each susceptor 3 where the holder 3a is absent so that each susceptor 3 is supported.
Then, a substrate 10 such as a semiconductor wafer is set on the substrate.

Next, the caterpillar 4 is mounted on the inner circumference of the ring 5, and the ring 5 is set in the vacuum furnace. The caterpillar rotating means (not shown) rotates the caterpillar 4 in a fixed direction along the inner peripheral surface of the ring 5 via the roller 6 provided on the inner periphery of the ring 5. Rotation speed is 100 rp
When the thickness is about m or more, a centrifugal force acts on the substrate 10 and the substrate 10 is pressed against the susceptor 3, so that the substrate 10 does not drop even if the holder 3a is released. Therefore, the holder 3a is released so that the surface of the substrate 10 has no obstacle.

Next, as shown in FIG. 1, the ring 5
The rotating shaft 5a is rotated to stand up the ring 5, and a material container 7 such as a crucible or a boat containing a material to be vapor-deposited in the center thereof is inserted into the center of the ring 5. Even in this state, the caterpillar 4 is rotating in a fixed direction along the inner peripheral surface of the ring 5, so that the substrate 10 is pressed against the susceptor 3 without dropping.

In this state, the inside of the vacuum furnace is evacuated to evaporate by raising the temperature of the raw material to be vapor-deposited and vapor-deposited on the surface of the substrate 10 facing the material container 7. At this time, the rotation shaft 5a of the ring 5 is rotated back and forth so as not to hit the support base 8 of the material container 7, and the ring 5 is rotated around the center axis in a plane perpendicular to the center axis of the ring 5. By changing the position back and forth, vapor deposition can be performed on the surface of the substrate 10 from all directions, and a vapor deposition film can be uniformly formed even if the surface has irregularities. In this case, the number of rotations of the ring 5 around the rotation axis 5a and the number of rotations about the central axis may be slower than the number of rotations of the caterpillar 4.

[0022]

According to the present invention, when a substrate such as a semiconductor wafer on which a vapor deposition film is provided is first set, it is only necessary to support it lightly by a holder so that the substrate does not drop from the susceptor, and the caterpillar rotates at high speed. Since the holder is released when it is pushed out, no force is applied to hold the substrate. Therefore, even when a thin wafer or the like is vapor-deposited, it will not be damaged and will not fall down during vapor deposition to cause a defect. As a result, it is possible to obtain a vapor-deposited film with high yield and high quality.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a main part of an embodiment of a vacuum vapor deposition device of the present invention.

FIG. 2 is an explanatory diagram showing a state in which substrates are attached to the ring, the caterpillar portion, and the susceptor of FIG.

FIG. 3 is an explanatory diagram of a main part of a conventional vacuum vapor deposition device.

[Explanation of symbols]

 3 Susceptor 3a Holding tool 4 Caterpillar 5 Ring 5a Rotating shaft 7 Material container 10 Substrate

Claims (4)

[Claims] 1. A caterpillar to which a plurality of susceptors for mounting a substrate on which a vapor-deposited film is mounted are connected, and the caterpillar rotates along the inner circumference and a rotation axis is provided on the outer circumference along the radial direction of the inner circumference. And a track rotating means for rotating the track along the inner circumference of the ring, the susceptor having a holder for the substrate, which holds when the track is not rotating. A vacuum vapor deposition apparatus which is provided so as to hold the substrate and separate from the substrate while the caterpillar is rotating. 2. A first ring rotating means for rotating the rotating shaft of the ring around the rotating shaft, and rotating the ring in a plane perpendicular to the central axis of the inner circumference of the ring. The vacuum vapor deposition apparatus according to claim 1, further comprising: a second ring rotating unit that allows the second ring rotating unit to rotate. 3. (a) A substrate provided with a vapor deposition film on each susceptor of a caterpillar to which a plurality of susceptors are connected is held by a holder provided on the susceptor, and (b) the caterpillar is rotated on its inner peripheral surface. After mounting on the inner peripheral surface of the ring, the caterpillar is rotated along the inner peripheral surface in a vacuum furnace,
(C) After the centrifugal force acts on the track due to the rotation of the track, the holder is released from the substrate,
(D) A vacuum vapor deposition method, which comprises depositing a raw material for forming the vapor deposited film on a center portion of the ring and evaporating the raw material. 4. When the raw material is vapor-deposited, the ring is rotated about a rotation axis provided along the radial direction on the outer peripheral side of the ring, and the ring is centered on the center axis of the ring. The vacuum vapor deposition method according to claim 3, wherein the raw material is vapor-deposited on the substrate while applying rotation in a plane perpendicular to the axis.