JPS6269611A - Coating device - Google Patents

Coating device

Info

Publication number
JPS6269611A
JPS6269611A JP20867185A JP20867185A JPS6269611A JP S6269611 A JPS6269611 A JP S6269611A JP 20867185 A JP20867185 A JP 20867185A JP 20867185 A JP20867185 A JP 20867185A JP S6269611 A JPS6269611 A JP S6269611A
Authority
JP
Japan
Prior art keywords
wafer
photoresist
coated
coating
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20867185A
Other languages
Japanese (ja)
Inventor
Takeshi Hattori
毅 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20867185A priority Critical patent/JPS6269611A/en
Publication of JPS6269611A publication Critical patent/JPS6269611A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To contrive improvement in the uniformity of thickness of the film formed on the material to be coated by a method wherein a rotary stand is supported by a rotary inversion mechanism which can be rotated on the plane surface intersecting with the rotating surface, and to enable the material to be treated to make an inversion on the rotary stand. CONSTITUTION:An inversion mechanism 7 is operated, it is inverted in such a manner that the coated surface of a photoresist 5 is facing downward while the wafer 3 retained by a spin chuck 2 is being rotated, and the above-mentioned state is maintained for the prescribed period. At this time, as the coated surface of the wafer 3 is facing downward, the excessive photoresist 5 remaining in the gap of pattern protrudingly formed on the coated plane surface of the wafer due to the surface tension and the like, for example, is removed from the gap of pattern by means of resultant force of the weight of the inversion mechanism 7 itself and the centrifugal force generated by the rotation of the wafer 3. As a result, a uniform film of photoresist 5 can be formed on the surface of the wafer 3 along the cross-sectional shape of the roughened part formed by patterning.

Description

【発明の詳細な説明】 [技術分野] 本発明は、塗布技術、特に、半導体装置の製造において
ウェハにフォトレジストを塗布する工程に適用して有効
な技術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a coating technique, and particularly to a technique that is effective when applied to a process of coating a wafer with a photoresist in the manufacture of semiconductor devices.

[背景技術] 半導体装置の製造において、たとえばシリコンなどから
なる半導体基板、すなわちウェハに配線構造や絶縁膜な
どを所定のパターンに形成するため、通常フォトリソグ
ラフィ技術が用いられる。
[Background Art] In the manufacture of semiconductor devices, photolithography technology is usually used to form wiring structures, insulating films, etc. in predetermined patterns on a semiconductor substrate, ie, a wafer, made of silicon or the like.

そして、前記のフォトリソグラフィ技術においてエツチ
ング操作に先立って感光剤であるフォトレジストをウェ
ハ平面に塗布する方法としては、次のようなものが考え
られる。
In the photolithography technique described above, the following methods can be considered for applying a photoresist, which is a photosensitive agent, to the wafer surface prior to the etching operation.

すなわち、ウェハを水平に保持し、塗布平面を上向きに
して回転させ、回転されるウェハの中央部にフォトレジ
ストを所定量だけ滴下させ、ウェハの回転による遠心力
によってフォトレジストをウェハの全面にわたって均一
に分散させることにより、ウェハ表面に所定のフォトレ
ジスト膜を形成させるものである。
In other words, the wafer is held horizontally and rotated with the coating surface facing upward, and a predetermined amount of photoresist is dropped onto the center of the rotated wafer, and the photoresist is uniformly applied over the entire surface of the wafer by the centrifugal force caused by the rotation of the wafer. A predetermined photoresist film is formed on the wafer surface by dispersing the photoresist.

一方、ウェハに対するフォトレジスト塗布作業において
、たとえば、すでに形成された配線構造などのパターン
によってウェハ平面に凹凸がある場合には、ウェハに塗
布されるフォトレジスト膜は前記の凹凸の断面形状に沿
って均一に形成されることが、後のエツチング工程など
における工・7チングのばらつきを低減するなどの観点
から重要となる。
On the other hand, in the process of applying photoresist to a wafer, for example, if the wafer surface has unevenness due to a pattern such as an already formed wiring structure, the photoresist film applied to the wafer will be applied along the cross-sectional shape of the unevenness. Uniform formation is important from the viewpoint of reducing variations in etching in subsequent etching steps.

ところが、ウェハに形成される半導体素子の微細化、高
集積化などによってウェハ平面に凸状に形成されるパタ
ーンの相互間の距離が比較1小さい時には、フォトレジ
ストの表面張力などによって隣接される凸部の間に過剰
のフォトレジストが残存され、その部位の膜厚が他の平
坦な部分の膜厚よりも大となって、ウェハ表面に塗布さ
れるフォトレジスト膜厚の均一性を阻害する原因となっ
ていることを本発明者は見いだした。
However, when the distance between the convex patterns formed on the wafer plane is relatively small due to the miniaturization and high integration of semiconductor elements formed on the wafer, the surface tension of the photoresist causes the adjacent convexities to become smaller. Excess photoresist remains between the areas, and the film thickness in those areas becomes larger than that in other flat areas, which is the cause of inhibiting the uniformity of the photoresist film thickness applied to the wafer surface. The present inventor found that.

なお、フォトレジストの塗布技術について説明されてい
る文献としては、株式会社工業調査会、昭和57年11
月15日発行「電子材料」1983年別冊、P92〜P
96がある。
In addition, the literature explaining the photoresist coating technique is Kogyo Kenkyukai Co., Ltd., November 1982.
"Electronic Materials" 1983 special edition, published on the 15th of May, P92-P
There are 96.

[発明の目的コ 本発明の目的は、塗布膜厚の均一性を向上させることが
可能な塗布技術を提供することにある。
[Object of the Invention] An object of the present invention is to provide a coating technique that can improve the uniformity of the coating film thickness.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、つぎの通りである。
[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、被塗布物が着脱自在に載置される回転台が、
該回転台の回転平面に交差する平面内において回転自在
な反転機構に保持されるように構成し、前記被処理物が
、前記回転台に載置された状態で反転可能にすることに
より、被塗布物の塗布平面が下向きの状態で塗布液の回
転塗布操作を行うことによって、たとえば被塗布物の塗
布平面に形成された凹凸部に残存される余剰の塗布液が
排除され、被塗布物の塗布平面に形成された凹凸部の断
面形状に沿って均一に塗布膜が形成されるようにして、
被塗布物に形成される塗布液の膜厚の均一性が向上され
るようにしたものである。
In other words, the rotary table on which the object to be coated is removably placed is
The workpiece is configured to be held by a reversing mechanism that is rotatable within a plane intersecting the rotation plane of the rotary table, and the workpiece is configured to be reversible while placed on the rotary table. By performing the rotation coating operation of the coating liquid with the application plane of the object to be coated facing downward, for example, excess coating liquid remaining on the uneven parts formed on the application plane of the object to be coated is removed, and the coating surface of the object to be coated is The coating film is formed uniformly along the cross-sectional shape of the uneven portion formed on the coating plane,
The uniformity of the film thickness of the coating liquid formed on the object to be coated is improved.

[実施例1] 第1図は本発明の一実施例である塗布装置の要部を示す
正面図であり、第2図はその側面図である。
[Embodiment 1] FIG. 1 is a front view showing the main parts of a coating device according to an embodiment of the present invention, and FIG. 2 is a side view thereof.

サーボモータ1によって回転されるスピンチャック2(
回転台)の上にはウェハ3(被塗布物)が、たとえば真
空吸着の方法で着脱自在に載置されるように構成されて
いる。
A spin chuck 2 (
The wafer 3 (object to be coated) is configured to be removably placed on the rotary table, for example, by vacuum suction.

さらに、スピンチャック2の中央部上方には滴下ノズル
4が設けられており、スピンチャック2の上に載置され
たウェハ3の中央部に、所定量のフォトレジスト5 (
塗布液)が滴下され、スピンチャック2の回転によって
発生される遠心力によってウェハ3の全面にわたって分
散されるものである。
Furthermore, a dropping nozzle 4 is provided above the center of the spin chuck 2, and a predetermined amount of photoresist 5 (
A coating liquid) is dropped and dispersed over the entire surface of the wafer 3 by the centrifugal force generated by the rotation of the spin chuck 2.

この場合、前記サーボモータ1およびこのサーボモータ
1によって回転されるスピンチャック2は、回転軸6を
中心として鉛直面内において回転自在に設けられた反転
機構7によって保持されるように構成され、所望の時期
に、ウェハ3を保持した状態で回転されつつあるスピン
チャック2が、水平上向きの状態から、第1図において
二点鎖線で示される下向きの状態に反転可能にされてい
る。
In this case, the servo motor 1 and the spin chuck 2 rotated by the servo motor 1 are configured to be held by a reversing mechanism 7 that is rotatably provided in a vertical plane about a rotation shaft 6, and At this time, the spin chuck 2, which is being rotated while holding the wafer 3, can be reversed from the horizontally upward position to the downward position shown by the two-dot chain line in FIG.

以下、本実施例の作用について説明する。The operation of this embodiment will be explained below.

始めに、スピンチャック2は水平」〕向きの状態で静止
され、ウェハ3が真空吸着の方法で固定される。
First, the spin chuck 2 is held still in a "horizontal" orientation, and the wafer 3 is fixed by vacuum suction.

次に、スピンチャック2の」二に位置されたウェハ3の
中央部には滴下ノズル4から所定量のフォトレジスト5
が滴下される。
Next, a predetermined amount of photoresist 5 is applied from the drip nozzle 4 to the center of the wafer 3 positioned at the second position of the spin chuck 2.
is dripped.

その後、サーボモータ1によるスピンチャック2の回転
が開始され、スピンチャック2とともに回転されるウェ
ハ3の中央部に滴下されたフォI・レジスト5は遠心力
によってウェハ3の表面全域に分散される。
Thereafter, rotation of the spin chuck 2 by the servo motor 1 is started, and the photoresist 5 dropped onto the center of the wafer 3 rotated together with the spin chuck 2 is dispersed over the entire surface of the wafer 3 by centrifugal force.

次に反転機構7が作動され、スピンチャック2に保持さ
れたウェハ3は回転されつつ、第1図において二点鎖線
で示されるようにフォトレジスト5の塗布面が下向きと
なるように反転され、所定の時間保持される。
Next, the reversing mechanism 7 is activated, and while the wafer 3 held by the spin chuck 2 is rotated, it is reversed so that the surface coated with the photoresist 5 faces downward, as shown by the two-dot chain line in FIG. It is held for a predetermined period of time.

この時、ウェハ3の塗布面が下向きの状態であるため、
たとえばウェハ3の塗布平面に凸状に形成されたパター
ン(図示せず)の間隙に表面張力などに起因して残留さ
れる過剰のフォトレジスト5が、下向きに作用される自
重とウエノ\3の回転による遠心力との合力によって前
記パターンの間隙部から排除され、ウェハ3の塗布面に
おいては、形成されたパターンなどによる凹凸部の断面
形状に沿ったフォトレジスト5の均一な塗布膜が形成さ
れる。
At this time, since the coating surface of the wafer 3 is facing downward,
For example, excessive photoresist 5 remaining in the gaps between patterns (not shown) formed in a convex shape on the coating plane of the wafer 3 due to surface tension, etc., is affected by its own weight acting downward and the wafer \3. The photoresist 5 is removed from the gap between the patterns by the combined force with the centrifugal force caused by the rotation, and a uniform coating film of the photoresist 5 is formed on the coating surface of the wafer 3 along the cross-sectional shape of the uneven portion due to the formed pattern. Ru.

所定の時間経過後、ウェハ2が保持されるスピンチャッ
ク1は水平上向きの状態に復帰されるとともに回転が停
止される。
After a predetermined period of time has elapsed, the spin chuck 1 holding the wafer 2 is returned to a horizontally upward position and its rotation is stopped.

そして、真空吸着によるウェハ3の固定状態が解除され
、フォトレジスト5の均一な塗布膜が形成されたウェハ
3は次工程に搬送される。
Then, the fixation state of the wafer 3 by vacuum suction is released, and the wafer 3 on which the uniform coating film of the photoresist 5 has been formed is transported to the next process.

[効果] (1)1回転される被塗布物に塗布液を滴下することに
よって塗布膜を形成する塗布装置の、前記被塗布物が着
脱自在に載置される回転台が、該回転台の回転平面に交
差する平面内において回転自在な反転機構に保持され、
前記被処理物が、前記回転台に載置された状態で反転可
能にされているため、たとえば被塗布物の塗布平面を下
向きにした状態で塗布液の回転塗布操作を行うことによ
って、被塗布物の塗布平面に形成された凹凸部の間隙な
どに残存される過剰の塗布液が該塗布液の自重および回
転の遠心力によって排除され、被塗布物の塗布平面に形
成された凹凸部の断面形状に沿って均一に塗布膜を形成
することが可能となり、被塗布物に形成される塗布液の
膜厚の均一性を向上させることができる。
[Effects] (1) A rotary table on which the object to be coated is removably placed, of a coating device that forms a coating film by dropping a coating liquid onto the object rotated once, is rotated once. It is held by a reversing mechanism that can freely rotate within a plane that intersects the rotation plane,
Since the object to be treated can be turned over while placed on the rotary table, the object to be coated can be rotated, for example, by performing a rotational coating operation of the coating liquid with the application surface of the object facing downward. The excess coating liquid remaining in the gaps between the uneven parts formed on the coating plane of the object is removed by the weight of the coating liquid and the centrifugal force of rotation, and the cross section of the uneven parts formed on the coating plane of the object is removed. It becomes possible to form a coating film uniformly along the shape, and the uniformity of the film thickness of the coating liquid formed on the object to be coated can be improved.

(2)、前記!11の結果、エツチング工程においてフ
ォトレジスト膜厚の不均一さに起因するエツチング結果
のばらつきが低減され、半導体装置の製造における歩留
りが向上される。
(2), above! As a result of No. 11, variations in etching results due to non-uniformity of the photoresist film thickness in the etching process are reduced, and the yield in manufacturing semiconductor devices is improved.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on examples, it goes without saying that the present invention is not limited to the above-mentioned examples and can be modified in various ways without departing from the gist thereof. Nor.

[利用分野] 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウニへのフォトレジ
スト塗布技術に適用した場合について説明したが、それ
に限定されるものではなく、均一な厚さの塗布膜を形成
することが必要される塗布技術に広く適用できる。
[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the field of application which is the background of the invention, which is the technique of applying photoresist to sea urchins, but the present invention is not limited thereto. It can be widely applied to coating techniques that require the formation of a coating film of uniform thickness.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例である塗布装置の要部を示す
正面図、 第2図はその側面図である。 1・・・サーボモータ、2・・・スピンチャック(回転
台)、3・・・ウェハ(被塗布物)、4・・・滴下ノズ
ル、5・・・フォトレジスト(塗布液)、6・・・回転
軸、7・・・反転機構。
FIG. 1 is a front view showing the main parts of a coating device according to an embodiment of the present invention, and FIG. 2 is a side view thereof. 1... Servo motor, 2... Spin chuck (rotating table), 3... Wafer (object to be coated), 4... Dripping nozzle, 5... Photoresist (coating liquid), 6...・Rotation axis, 7...Reversing mechanism.

Claims (1)

【特許請求の範囲】 1、回転される被塗布物に塗布液を滴下することによっ
て塗布膜を形成する塗布装置であって、前記被塗布物が
着脱自在に載置される回転台が、該回転台の回転平面に
交差する平面内において回転自在な反転機構に保持され
、前記被処理物が、前記回転台に載置された状態で反転
可能にされてなることを特徴とする塗布装置。 2、前記被塗布物および前記塗布液が、それぞれウェハ
およびフォトレジストであることを特徴とする特許請求
の範囲第1項記載の塗布装置。
[Scope of Claims] 1. A coating device that forms a coating film by dropping a coating liquid onto a rotated object, the rotary table on which the object to be coated is removably placed; 1. A coating device, wherein the coating device is held by a reversing mechanism that is rotatable within a plane intersecting a rotation plane of a rotary table, and the object to be processed can be reversed while being placed on the rotary table. 2. The coating apparatus according to claim 1, wherein the object to be coated and the coating liquid are a wafer and a photoresist, respectively.
JP20867185A 1985-09-24 1985-09-24 Coating device Pending JPS6269611A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20867185A JPS6269611A (en) 1985-09-24 1985-09-24 Coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20867185A JPS6269611A (en) 1985-09-24 1985-09-24 Coating device

Publications (1)

Publication Number Publication Date
JPS6269611A true JPS6269611A (en) 1987-03-30

Family

ID=16560129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20867185A Pending JPS6269611A (en) 1985-09-24 1985-09-24 Coating device

Country Status (1)

Country Link
JP (1) JPS6269611A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930549A (en) * 1996-11-21 1999-07-27 Samsung Electronics Co., Ltd. Developing device for semiconductor device fabrication and its controlling method
JP2010253341A (en) * 2009-04-22 2010-11-11 Toppan Printing Co Ltd Application apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930549A (en) * 1996-11-21 1999-07-27 Samsung Electronics Co., Ltd. Developing device for semiconductor device fabrication and its controlling method
JP2010253341A (en) * 2009-04-22 2010-11-11 Toppan Printing Co Ltd Application apparatus

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