JPH0696138B2 - Spin coating method - Google Patents
Spin coating methodInfo
- Publication number
- JPH0696138B2 JPH0696138B2 JP63280762A JP28076288A JPH0696138B2 JP H0696138 B2 JPH0696138 B2 JP H0696138B2 JP 63280762 A JP63280762 A JP 63280762A JP 28076288 A JP28076288 A JP 28076288A JP H0696138 B2 JPH0696138 B2 JP H0696138B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- source
- coating
- spin coating
- peripheral speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体基板等の被塗布基板を回転させ、不純
物を含む液状拡散ソース等またはフォトレジスト等を滴
下もしくは吹付けて塗布するスピンコーティング方法に
関する。The present invention relates to spin coating in which a substrate to be coated such as a semiconductor substrate is rotated, and a liquid diffusion source containing impurities, a photoresist, or the like is dropped or sprayed for coating. Regarding the method.
半導体素子の製作には、所期の電気的特性を得るため
に、例えばシリコン・ウエハのような半導体基板内に所
定の不純物を所定の濃度に分布せしめることが必要であ
る。これは半導体基板に不純物を含む拡散ソースを付着
させる工程とその不純物を基板中に熱拡散させる工程と
によって行われる。不純物を基板に付着させる方法は種
々あるが、そのひとつとして基板を所定の周速で回転さ
せるとともに液状の拡散ソースを基板の中心に滴下させ
るかもしくは吹付けによって供給し、遠心力で周囲に拡
散ソースを延ばすスピンコーティング方法が広く行われ
ている。スピンコーティングを行う場合の基板の周速は
拡散ソースの粘度，供給量より決定された周速で行われ
る。そして所定の拡散ソース液の供給後に、コーティン
グを行う周速よりもさらに高い周速にて過剰の拡散ソー
スを振切って拡散ソースの膜厚を均一化する。Fabrication of semiconductor devices requires that certain impurities be distributed in certain concentrations within a semiconductor substrate, such as a silicon wafer, in order to obtain the desired electrical characteristics. This is performed by attaching a diffusion source containing impurities to the semiconductor substrate and thermally diffusing the impurities into the substrate. There are various methods of adhering impurities to the substrate.One of them is to rotate the substrate at a predetermined peripheral speed and supply a liquid diffusion source to the center of the substrate by dropping or spraying and diffusing to the surroundings by centrifugal force. Spin coating methods for extending the source are widely used. The peripheral speed of the substrate for spin coating is determined by the viscosity of the diffusion source and the supply amount. After the supply of the predetermined diffusion source liquid, the excess diffusion source is shaken off at a peripheral speed higher than the peripheral speed at which the coating is performed to make the film thickness of the diffusion source uniform.
また、フォトリソグラフィを行う場合、フォトレジスト
を半導体基板上に均一な厚さに塗布する必要がある。こ
の場合も同様なやり方のスピンコーティング方法が用い
られる。Further, when performing photolithography, it is necessary to apply a photoresist on the semiconductor substrate to a uniform thickness. Also in this case, the spin coating method of the similar method is used.
従来のスピンコーティング法では、ソース塗布時に基板
の反対面の外周部分に塗布面よりのソースが回り込んで
しまうという欠点があった。これは、ソースの種類およ
びスピンコーティング条件により若干の程度差はある
が、いずれにせよ、さけられない欠点であった。とりわ
け、ソースが水溶性で粘度も低く基板に対する濡れ性の
良い場合にはこの回り込みは激しく、外周部より約２〜
3mmに及ぶことがある。また、ソース供給後高回転でコ
ーティングするためソースが飛ばされソースの付着量が
少なくなってしまうという問題も有り、この２つの問題
は半導体素子製作の大きな問題となっていた。つまり、
例えば拡散ソースの不純物としてリン（Ｐ）を用い、表
面にｎ型不純物層を形成しようとした場合に、拡散ソー
スが基板裏面まで回り込んでしまうと、回り込んだ部分
もｎ型層が形成されることになり、予期せぬ場所に不必
要な領域が形成され、最悪の場合素子が不良となってし
まう。また、拡散ソースが飛ばされソースの付着量が少
なくなってしまうと得ようとする特性が得られない等の
問題が生ずるということである。The conventional spin coating method has a drawback in that the source wraps around the outer peripheral portion of the opposite surface of the substrate when the source is applied. This is a drawback that cannot be avoided in any case, although there is a slight difference depending on the type of source and spin coating conditions. In particular, when the source is water-soluble and has low viscosity and good wettability to the substrate, this wraparound is severe, and it is about 2 to 2 from the outer peripheral portion.
It can be up to 3 mm. Further, since the coating is performed at a high rotation after the source is supplied, there is a problem that the source is blown and the amount of the attached source is reduced, and these two problems have been major problems in manufacturing a semiconductor device. That is,
For example, when phosphorus (P) is used as an impurity of the diffusion source and an n-type impurity layer is formed on the front surface, if the diffusion source reaches the back surface of the substrate, the n-type layer is also formed in the portion that has entered. As a result, an unnecessary region is formed in an unexpected place, and in the worst case, the device becomes defective. Further, if the diffusion source is blown off and the amount of the attached source is reduced, there arises a problem that desired characteristics cannot be obtained.
一方、フォトレジストの塗布の際にも同様な問題があ
り、レジスト液が裏面に回り込むと裏面が平面でなくな
り、露光装置などへ基板を真空チャックで装着する場合
の密着性が得られなくなるおそれがある。また所定の膜
厚が得られなくなるおそれがある。On the other hand, there is a similar problem when applying a photoresist, and when the resist solution wraps around to the back surface, the back surface becomes non-planar, and there is a possibility that the adhesion cannot be obtained when the substrate is attached to an exposure apparatus by a vacuum chuck. is there. In addition, a predetermined film thickness may not be obtained.
本発明の課題は、塗布液の回り込みがなく、所望の面に
均一で所定の厚さの膜を塗布できるスピンコーティング
方法を提供することにある。An object of the present invention is to provide a spin coating method capable of coating a desired surface with a uniform film having a predetermined thickness without the coating liquid wrapping around.
上記の課題の解決のために、本発明のスピンコーティン
グ方法は、一定の高い周速で水平面内に回転中の被塗布
基板の中心部に塗布液を供給し、塗布液の供給終了後、
周速を落として一定の低い周速で塗布液を基板の周辺ま
で延ばすものとする。In order to solve the above problems, the spin coating method of the present invention supplies the coating liquid to the central portion of the substrate to be coated which is rotating in a horizontal plane at a constant high peripheral speed, and after the supply of the coating liquid is completed,
The peripheral speed is lowered and the coating liquid is spread to the periphery of the substrate at a constant low peripheral speed.
塗布液を滴下または吹付けるときに、一定の高い周速で
被塗布基板が回転しているので、塗布液は周辺に向かっ
て広がるが、周速が速いため振り飛ばされて基板の裏面
への回り込みはなく、塗布液の供給終了後、周速を落と
して一定の低い周速で塗布液は基板の周辺まで徐々に拡
がり、塗布液の付着量が多くなり、所望の厚さの塗膜が
得られ、かつ回り込みが起こることがない。When the coating liquid is dripped or sprayed, the substrate to be coated rotates at a constant high peripheral speed, so the coating liquid spreads toward the periphery, but the peripheral speed is high, so the coating liquid is shaken and scattered to the back surface of the substrate. There is no wraparound, after the supply of the coating liquid is completed, the peripheral speed is reduced and the coating liquid gradually spreads to the periphery of the substrate at a constant low peripheral speed, the amount of the coating liquid attached increases, and a coating film of the desired thickness is formed. It is obtained and there is no wraparound.
第１図は本発明の一実施例の拡散ソース塗布時の回転数
の時間的な変化を示す。図の上に斜線を引いて示したの
がソースの滴下時期である。すなわち、予めシリコン基
板をスピンナ上で高回転にさせておき最高回転数で回転
している時期にソースを滴下する方式である。これは、
第２図の比較のために示したシリコン基板をスピンナ上
で低回転させておき、そこにソースを滴下し、その後高
回転させていた従来の方式と明白に相違している。FIG. 1 shows the change over time in the number of rotations when applying a diffusion source according to an embodiment of the present invention. The time when the source is dripped is shown by hatching on the figure. That is, this is a method in which the silicon substrate is preliminarily rotated at a high speed on the spinner and the source is dropped at the time when the silicon substrate is rotated at the maximum rotation speed. this is,
This is clearly different from the conventional method in which the silicon substrate shown for comparison in FIG. 2 is rotated at a low speed on the spinner, the source is dropped therein, and then rotated at a high speed.
第２図に示す方式では、駆動モータの機械的な限界によ
って回転数N3からN4にうつる途中でソースが基板の外周
部まで広がってしまう。その時点では遠心力が小さいた
め、ソースを振り飛ばすことができずソースが基板の裏
面に回り込んでしまう現象の発生することが分かった。
これに対し本発明による方式は、ウエハがすでに高速回
転数N1に達している時期にソースが滴下されるため、ソ
ース振り切りの遠心力は十分であり、従って回り込みの
ない塗布が可能である。しかし、ソース滴下後も回転数
N1でコーティングしているとソースが飛ばされる量が多
くなってしまい、基板上の拡散ソース塗布量が減ってし
まう。そこでソース滴下後はN1より回転数の低いN2にす
ることにより、回り込みがなくソース付着量の適度な塗
布が可能である。In the method shown in FIG. 2, the source spreads to the outer peripheral portion of the substrate while moving from the rotation speed N 3 to N 4 due to the mechanical limit of the drive motor. Since the centrifugal force was small at that time, it was found that the source could not be shaken off and the source would go around to the back surface of the substrate.
On the other hand, in the method according to the present invention, the source is dropped at the time when the wafer has already reached the high-speed rotation speed N 1 , so that the centrifugal force of the source shaking off is sufficient, and therefore coating without wraparound is possible. However, the number of rotations after the sauce was dropped
Coating with N 1 increases the amount of the source that is blown, which reduces the amount of diffusion source applied on the substrate. Therefore, after the source is dropped, by setting the rotation speed to N 2 which is lower than N 1 , it is possible to apply an appropriate amount of the source adhesion without wraparound.
スピンコーティング条件は、ソースの粘度，基板の直
径，基板の表面状態等によって異なるが、実験ではN1＝
8000rpm以上、N2＝2000〜5000rpmが適切であった。この
ことは、ソースを吹付けにより被塗布基板中心部へ供給
する場合も同様である。Spin coating conditions differ depending on the viscosity of the source, the diameter of the substrate, the surface condition of the substrate, etc., but in the experiment N 1 =
8000 rpm or more and N 2 = 2000 to 5000 rpm were suitable. This is also the case when the source is sprayed to the center of the substrate to be coated.
本発明によるスピンコーティング方法は特に低粘度ソー
スの塗布に有効である。また、フォトレジストの回り込
みのない塗布にも有効に適用できる。The spin coating method according to the present invention is particularly effective for applying a low viscosity source. Further, it can be effectively applied to the coating without the wraparound of the photoresist.
本発明によれば、被塗布基板を一定の高速度で回転させ
ておいて、塗布液を基板中心部に供給することにより塗
布液が振り飛ばされることがあっても裏面へ回り込むこ
とはなく、塗布液の供給終了後、一定の低い回転数に落
とすことにより塗布液が振り飛ばされたり裏面へ回り込
むことなく広がるので、塗布液の付着量が多くなり、所
望の厚さの塗膜が得られる。従って、ダイオードその他
の半導体素子製造における拡散ソース塗布に極めて有効
であり、フォトレジストその他の液の基板片面への塗布
にも同様に有効である。According to the present invention, while rotating the substrate to be coated at a constant high speed, even if the coating liquid may be shaken off by supplying the coating liquid to the central portion of the substrate, it does not go around to the back surface, After the coating liquid is supplied, the coating liquid spreads without being shaken off or wrapping around to the back surface by lowering the rotation speed to a certain low number, so that the amount of the coating liquid deposited increases and a coating film of the desired thickness can be obtained. . Therefore, it is extremely effective for diffusion source coating in the production of diodes and other semiconductor devices, and is also effective for coating photoresist and other liquids on one side of the substrate.
第１図は本発明の一実施例のスピンコーティング方法に
おける半導体基板回転数の時間的変化と拡散ソース滴下
の時期を示す線図、第２図は従来のスピンコーティング
方法における同様の線図である。FIG. 1 is a diagram showing a temporal change of the number of revolutions of a semiconductor substrate and a timing of dropping a diffusion source in a spin coating method according to an embodiment of the present invention, and FIG. 2 is a similar diagram in a conventional spin coating method. .
Claims (1)
布基板の中心部に塗布液を供給し、塗布液の供給終了
後、周速を落として一定の低い周速で塗布液を基板の周
辺まで延ばすことを特徴とするスピンコーティング方
法。1. A coating solution is supplied to a central portion of a substrate to be coated which is rotating in a horizontal plane at a constant high peripheral speed, and after the supply of the coating solution is completed, the peripheral speed is reduced to a constant low peripheral speed. Spin coating method, which comprises extending the substrate to the periphery of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63280762A JPH0696138B2 (en) | 1988-11-07 | 1988-11-07 | Spin coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63280762A JPH0696138B2 (en) | 1988-11-07 | 1988-11-07 | Spin coating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02126970A JPH02126970A (en) | 1990-05-15 |
| JPH0696138B2 true JPH0696138B2 (en) | 1994-11-30 |
Family
ID=17629601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63280762A Expired - Lifetime JPH0696138B2 (en) | 1988-11-07 | 1988-11-07 | Spin coating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0696138B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4629396B2 (en) * | 2003-09-29 | 2011-02-09 | Ｈｏｙａ株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
| JP4648443B2 (en) * | 2008-09-22 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154444A (en) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | Method for coating resist |
| JPS60115224A (en) * | 1983-11-28 | 1985-06-21 | Fuji Xerox Co Ltd | Resist coating method |
-
1988
- 1988-11-07 JP JP63280762A patent/JPH0696138B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02126970A (en) | 1990-05-15 |
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