JPS6352109B2 - - Google Patents
Info
- Publication number
- JPS6352109B2 JPS6352109B2 JP21001685A JP21001685A JPS6352109B2 JP S6352109 B2 JPS6352109 B2 JP S6352109B2 JP 21001685 A JP21001685 A JP 21001685A JP 21001685 A JP21001685 A JP 21001685A JP S6352109 B2 JPS6352109 B2 JP S6352109B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- film
- target
- film formation
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 6
- 210000000078 claw Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、スパツタ方法に関するものである。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a sputtering method.
ターゲツトをスパツタし、これによりターゲツ
トから放出されるスパツタ粒子を試料の被膜形成
面に被着させて成膜するスパツタ方法としては、
例えば、特開昭58−31082号公報に記載のような、
ターゲツトに対して試料の被膜形成面を傾斜させ
るようにしたものが知られている。
A sputtering method in which a target is sputtered and sputtered particles emitted from the target are deposited on the coating surface of the sample to form a film is as follows:
For example, as described in Japanese Patent Application Laid-Open No. 58-31082,
A method is known in which the surface of the sample on which the film is formed is inclined with respect to the target.
しかし、この方法では、試料の被膜形成面内の
任意の点においてターゲツトと試料の被膜形成面
内の任意の点においてターゲツトと試料の被膜形
成面との間の距離が異なるため、試料の被膜形成
面内での膜厚分布が不均一となり、また、一定方
向の試料の被膜形成面段差に対してのみステツプ
カバレージが良くなるといつた問題がある。 However, in this method, the distance between the target and the film formation surface of the sample differs at any point within the film formation surface of the sample and the distance between the target and the film formation surface of the sample differs at any point within the film formation surface of the sample. There are problems in that the in-plane film thickness distribution becomes non-uniform and step coverage improves only with respect to steps on the film forming surface of the sample in a certain direction.
本発明の目的は、試料の被膜形成面内での膜厚
分布を均一化できると共に、各方向の試料の被膜
形成面段差に対してステツプカバレージを向上で
きるスパツタ方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a sputtering method that can uniformize the film thickness distribution within the film forming surface of the sample and improve step coverage with respect to step differences in the film forming surface of the sample in each direction.
本発明は、ターゲツトに対する試料の被膜形成
面の傾斜角を、一定の成膜時間内における前記タ
ーゲツトと前記試料の被膜形成面との間の距離の
平均値を一定値に維持して周期的に変化させるこ
とで、試料の被膜形成面内での膜厚分布を均一化
すると共に、各方向の試料の被膜形成面段差に対
してステツプカバレージを向上させようとするも
のである。
The present invention periodically adjusts the inclination angle of the film-forming surface of the sample with respect to the target by maintaining the average value of the distance between the target and the film-forming surface of the sample at a constant value within a certain film-forming time. By changing the thickness, the film thickness distribution is made uniform within the film formation surface of the sample, and step coverage is improved with respect to the step difference in the film formation surface of the sample in each direction.
以下、本発明の一実施例を第１図〜第３図によ
り説明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 to 3.
第１図において、ターゲツト８とターゲツトに
対向する試料ホルダ１に固定ツメ３で、試料、例
えば、半導体素子基板（以下、ウエハと略）２を
固定して、試料ホルダ１の裏面にボールジヨイン
ト５によつて、試料ホルダ１と軸６を連結して可
変とすると共に、回転台７に取り付けた複数個の
ボールベアリング４を試料ホルダ１に接触させな
がら、回転台７を回転させることによつて、第１
図におけるウエハ２の被膜形成面とターゲツト８
の傾斜角θは、ウエハ２の被膜形成面内の任意の
点において第２図に示す如く周期的に変化する。
また、第１図におけるウエハ２の被膜形成面内の
任意の点に対応するウエハ２とターゲツト８との
間の距離Ｄの平均値は、第３図に示す如く一定の
成膜時間ｔ内において一定値に維持される。 In FIG. 1, a sample, for example, a semiconductor element substrate (hereinafter referred to as wafer) 2, is fixed to a target 8 and a sample holder 1 facing the target using fixing claws 3, and a ball joint is attached to the back surface of the sample holder 1. 5, the sample holder 1 and the shaft 6 are connected to make it variable, and the rotating table 7 is rotated while a plurality of ball bearings 4 attached to the rotating table 7 are brought into contact with the sample holder 1. First, the first
Film formation surface of wafer 2 and target 8 in the figure
The inclination angle θ changes periodically as shown in FIG. 2 at any point within the film formation surface of the wafer 2.
Furthermore, the average value of the distance D between the wafer 2 and the target 8 corresponding to any point on the film formation surface of the wafer 2 in FIG. Maintained at a constant value.
本実施例によれば、ウエハの被膜形成面内の任
意の点において一定の成膜時間内にターゲツトと
ウエハとの間の距離の平均値を一定値に維持しな
がら、ターゲツトに対するウエハの被膜形成面の
傾斜角を一定の周期で変化させながらスパツタす
ることによつて、段差のあるウエハに対してステ
ツプカバレージを向上させることができると共に
膜厚分布を均一化できる。 According to this embodiment, the film can be formed on the wafer on the target while maintaining the average distance between the target and the wafer at a constant value within a certain film formation time at any point on the film formation surface of the wafer. By performing sputtering while changing the inclination angle of the surface at regular intervals, step coverage can be improved for wafers with steps, and the film thickness distribution can be made uniform.
本発明は、以上説明したように、試料の被膜形
成面内での膜厚分布を均一化できると共に、各方
向の試料の被膜形成面段差に対してステツプカバ
レージを向上できるスパツタ方法を提供できると
いう効果がある。
As explained above, the present invention can provide a sputtering method that can uniformize the film thickness distribution within the film formation surface of the sample and can improve step coverage with respect to step differences in the film formation surface of the sample in each direction. effective.
第１図は、本発明を実施したスパツタ装置の一
例を示す要部正面図、第２図は、第１図に示す装
置での傾斜角θと成膜時間ｔとの関係模式図、第
３図は、同じく距離Ｄと成膜時間ｔとの関係模式
図である。
１……試料ホルダ、２……ウエハ、３……固定
ツメ、４……ボールベアリング、５……ボールジ
ヨイント、６……軸、７……回転台、８……ター
ゲツト。
FIG. 1 is a front view of essential parts showing an example of a sputtering apparatus embodying the present invention, FIG. 2 is a schematic diagram of the relationship between the inclination angle θ and film forming time t in the apparatus shown in FIG. The figure is also a schematic diagram of the relationship between distance D and film-forming time t. DESCRIPTION OF SYMBOLS 1...Sample holder, 2...Wafer, 3...Fixing claw, 4...Ball bearing, 5...Ball joint, 6...Axis, 7...Rotating table, 8...Target.
Claims (1)
角を、一定の成膜時間内における前記ターゲツト
と前記試料の被膜形成面との間の距離の平均値を
一定値に維持して周期的に変化させることを特徴
とするスパツタ方法。1. Periodically changing the inclination angle of the film-forming surface of the sample with respect to the target while maintaining the average value of the distance between the target and the film-forming surface of the sample at a constant value within a certain film-forming time. A spatuta method characterized by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21001685A JPS6270568A (en) | 1985-09-25 | 1985-09-25 | Sputtering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21001685A JPS6270568A (en) | 1985-09-25 | 1985-09-25 | Sputtering method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6270568A JPS6270568A (en) | 1987-04-01 |
| JPS6352109B2 true JPS6352109B2 (en) | 1988-10-18 |
Family
ID=16582428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21001685A Granted JPS6270568A (en) | 1985-09-25 | 1985-09-25 | Sputtering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6270568A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01270321A (en) * | 1988-04-22 | 1989-10-27 | Anelva Corp | Sputtering device |
| JPH10147864A (en) | 1996-11-20 | 1998-06-02 | Nec Corp | Formation of thin film and sputtering device |
| JP2007262445A (en) * | 2006-03-27 | 2007-10-11 | Shin Meiwa Ind Co Ltd | Base material holding device |
| EP2437280A1 (en) * | 2010-09-30 | 2012-04-04 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
| WO2014002328A1 (en) * | 2012-06-29 | 2014-01-03 | キヤノンアネルバ株式会社 | Sputtering device and sputtering method |
| CN113388820B (en) * | 2021-08-16 | 2021-11-09 | 陛通半导体设备(苏州)有限公司 | Base device for improving uniformity of filling film, sputtering equipment and sputtering process |
-
1985
- 1985-09-25 JP JP21001685A patent/JPS6270568A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6270568A (en) | 1987-04-01 |
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