JPH0328369A - Target of thin film coating device - Google Patents

Abstract

PURPOSE:To improve uniformity of film thickness of a coated film by forming a target of a thin film coating device of a recessed surface so that thickness is made thin toward the central part from the circumferential part and changing the incident angle of the particles to be stuck. CONSTITUTION:A thin film is formed by sputtering a target 2 having a disk shape on a holding base 1 and allowing the constitutional material to fly as the particles to be stuck and sticking the particles on the surface of a semiconductor wafer (unshown in a figure). In the above-mentioned thin film sticking device, the surface 3 of the target 2 is formed into a recessed surface so that thickness is made gradually thin toward the central part from the peripheral part. The particles to be stuck are allowed to fly from this recessed surface and the incident angle onto the surface of the semiconductor wafer is made nearly uniform within the surface. Thereby the film thickness of the coated film within the surface is made uniform and a high-precision pattern can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a target for a thin film deposition device. [Prior Art] Figure 4 is a sectional view of an example of a target of a conventional thin film deposition apparatus for semiconductor devices. The target 2 held on the target holding stand 1 has a flat surface 3. As shown in FIG. 5, when the target 2 and the target holding table 1 are placed in a thin film deposition apparatus and the material to be deposited is spattered onto the semiconductor wafer 4, the material to be deposited is deposited on a particle track 6.
It flies as shown in . When the thickness of the deposited thin film is measured along the measurement direction 7 as shown in FIG. 6, it is thinner near the center and the thickness 7 varies.

[Problem to be solved by the invention]

In the above-mentioned conventional target, since the target surface is flat, the incident angle of the adherend material particles to the surface of the semiconductor wafer 4 differs within the plane of the semiconductor wafer 4, for example, at the periphery and the center, and the semiconductor wafer There is variation in the in-plane thickness of the deposited film on the eight surfaces, and this variation in film thickness causes differences in processing dimensions during pattern formation.
In semiconductor device technology that is becoming increasingly highly integrated, this dimensional difference cannot be ignored, leading to a decline in yield and quality in semiconductor device manufacturing.

[Means to solve the problem]

The target of the thin film deposition apparatus of the present invention has a concave surface whose thickness decreases from the periphery toward the center. [Example] Next, an example of the present invention will be described with reference to the drawings. FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line AA' of an embodiment of the present invention. The target 7 has a surface 3 whose thickness decreases from the periphery to the center.

Using this target 1, as shown in Fig. 2,
Sputtering is performed on the semiconductor wafer 4. After sputtering, when the film thickness X of the deposited film is measured along the measurement direction 7 as shown in FIG. 3, the film thickness X is almost constant. In the above embodiment, the target surface 3 is a linearly inclined Taber surface, but it can also be a curved surface, that is, a concave curved surface. A similar effect can be obtained by using a concave curved surface.

〔Effect of the invention〕

As explained above, in the present invention, the shape of the target surface is a concave surface where the film thickness becomes thinner from the peripheral part to the central part, and the incident angle of the deposited film particles to the surface of the semiconductor wafer is changed. This has the effect of improving the uniformity of the film thickness of the adhesion film that adheres to the surface of the wafer.

[Brief explanation of drawings]

Figures 1 (a) and (b) are a plan view and a sectional view taken along the line A-A' of an embodiment of the present invention, and Figure 2 is the trajectory of adherend material particles when the target shown in Figure 1 is used. FIG. 3 is a distribution diagram of the film thickness of a film formed using the target of the present invention, and FIG. 4 is a cross-sectional view of an example of a target of a conventional thin film deposition apparatus for semiconductor devices. Figure 5 is a cross-sectional view to explain the trajectory of adherent material particles when a conventional target is used, and Figure 6 is a distribution diagram of the film thickness of a film formed using a conventional target. be. 1...Target holding stand, 2...Target, 3...Surface, 4...
Semiconductor wafer 5... Wafer holding stand, 6... Particle track, 7... Measurement direction, 11... Target.
Representative patent attorney Susumu Uchihara No. 3 next door ￥4

Claims (1)

[Claims] A target for a thin film deposition apparatus characterized by having a concave surface whose thickness decreases from the periphery toward the center.