JPH0266170A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPH0266170A
JPH0266170A JP21793188A JP21793188A JPH0266170A JP H0266170 A JPH0266170 A JP H0266170A JP 21793188 A JP21793188 A JP 21793188A JP 21793188 A JP21793188 A JP 21793188A JP H0266170 A JPH0266170 A JP H0266170A
Authority
JP
Japan
Prior art keywords
target
semiconductor substrate
film
substrate
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21793188A
Other languages
Japanese (ja)
Inventor
Masatoshi Nakamura
中村 眞敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP21793188A priority Critical patent/JPH0266170A/en
Publication of JPH0266170A publication Critical patent/JPH0266170A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the uniformity and step coverage of a formed film by placing a semiconductor substrate and a target opposite to each other and sputtering the target while changing the relative positions of them. CONSTITUTION:A semiconductor substrate 1 fixed on a holder 2 and a target 4 are placed opposite to each other in a horizontal state and the target 4 is sputtered in a gaseous atmosphere at a prescribed vacuum pressure while relatively changing the horizontal position of the substrate 1 to the target 4 by horizontally rotating the substrate 1. The substrate 1 is rotated by rotating the holder 2 with a rotation unit 3. A film is uniformly formed on the substrate 1 and the step coverage of the film at the stepped part is improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はスパッタ装置に関し、特に均一な膜を形成可能
なスパッタ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus, and particularly to a sputtering apparatus capable of forming a uniform film.

〔従来の技術〕[Conventional technology]

従来、半導体装置の製造工程で利用されるスパッタ装置
は、成膜する半導体基板をその周辺においてホルダ等に
保持し、かつこの半導体基板に対向して成膜材料のター
ゲットを配置している。そして、所要のガス雰囲気で両
者間に電界を構成することにより、ターゲットをスパッ
タリングし、ターゲット材料を半導体基板の表面に付着
させて成膜を行う構成となっている。
2. Description of the Related Art Conventionally, a sputtering apparatus used in the manufacturing process of a semiconductor device holds a semiconductor substrate on which a film is to be formed in a holder or the like around the semiconductor substrate, and a target of a film forming material is placed opposite to the semiconductor substrate. Then, by creating an electric field between the two in a required gas atmosphere, the target is sputtered, and the target material is deposited on the surface of the semiconductor substrate to form a film.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のスパッタ装置は、半導体基板とターゲッ
トを夫々装置内に固定支持しているため、両者の相対位
置も固定されることになる。したがって、ターゲットか
らスパッタリングされて半導体基板の表面に付着するタ
ーゲツト材の付着方向。
In the conventional sputtering apparatus described above, the semiconductor substrate and the target are each fixedly supported within the apparatus, so the relative positions of the two are also fixed. Therefore, the direction in which the target material sputters from the target and adheres to the surface of the semiconductor substrate.

付着領域等に偏りが生じ、半導体基板における成膜の均
一性が悪く、また段差部でのステップカバレッジも悪い
という問題がある。
There are problems in that the deposition area is uneven, the uniformity of film formation on the semiconductor substrate is poor, and the step coverage at the stepped portion is also poor.

本発明は成膜の均一性を改善し、ステップカバレッジを
併せて改善したスパッタ装置を提供することを目的とす
る。
An object of the present invention is to provide a sputtering apparatus that improves the uniformity of film formation and also improves step coverage.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のスパッタ装置は、成膜を行う半導体基板と、こ
の半導体基板に対向配置した成膜材料としてのターゲッ
トとの相対位置を変化させる機構を備えている。
The sputtering apparatus of the present invention is equipped with a mechanism for changing the relative position of a semiconductor substrate on which a film is to be formed and a target serving as a film-forming material that is placed opposite to the semiconductor substrate.

〔作用〕[Effect]

上述した構成では、ターゲットと半導体基板との相対位
置変化に伴って、半導体基板に付着されるターゲットか
らのターゲツト材の付着方向が変化され、半導体基板に
均一に付着して成膜が行なわれる。
In the above-described configuration, the direction of adhesion of the target material from the target to the semiconductor substrate is changed as the relative position between the target and the semiconductor substrate changes, and the target material is uniformly adhered to the semiconductor substrate to form a film.

(実施例〕 次に、本発明を図面を参照して説明する。(Example〕 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1実施例を模式的に示す正面図であ
る。図において、■は表面にスパッタ膜が形成される半
導体基板であり、この半導体基板1は表面を下方に向け
た状態でその周辺部においてホルダ2に固定される。こ
のホルダ2は上部にローテーションユニット3が設けら
れ、その中心軸の廻りに水平回動される。
FIG. 1 is a front view schematically showing a first embodiment of the present invention. In the figure, ▪ is a semiconductor substrate on which a sputtered film is formed, and this semiconductor substrate 1 is fixed to a holder 2 at its periphery with its surface facing downward. This holder 2 is provided with a rotation unit 3 on its upper part, and is horizontally rotated around its central axis.

一方、前記ホルダ2の下方位置にはターゲット4を略水
平状態に固定支持しており、スパッタ電源5が通電され
ている。
On the other hand, a target 4 is fixedly supported in a substantially horizontal position below the holder 2, and a sputtering power source 5 is energized.

なお、実際にはこれらは真空チャンバ内に設備されてお
り、所定の真空圧のガス雰囲気に保持される。
Note that these are actually installed in a vacuum chamber and maintained in a gas atmosphere at a predetermined vacuum pressure.

したがって、この構成によればローテーションユニット
3を駆動してホルダ2を回転させることにより、半導体
基Fi1は水平方向に回転され、ターゲット4に対する
平面方向の位置が相対変化される。これにより、ターゲ
ット4のスパッタリングによって飛散されてくるターゲ
ツト材が半導体基板1の表面に付着する際の方向が変化
され、この結果半導体基板1の表面各部では種々の方向
からターゲツト材が付着されることになり、結果として
ターゲツト材が均一に付着することになる。
Therefore, according to this configuration, by driving the rotation unit 3 to rotate the holder 2, the semiconductor substrate Fi1 is rotated in the horizontal direction, and its position in the plane direction relative to the target 4 is changed. As a result, the direction in which the target material scattered by the sputtering of the target 4 is attached to the surface of the semiconductor substrate 1 is changed, and as a result, the target material is attached to various parts of the surface of the semiconductor substrate 1 from various directions. This results in uniform adhesion of the target material.

したがって、半導体基板1の表面に均一な厚さの膜が形
成される。
Therefore, a film with a uniform thickness is formed on the surface of the semiconductor substrate 1.

第2図は本発明の第2実施例を模式的に示す正面図であ
り、第1実施例と同一部分には同一符号を付しである。
FIG. 2 is a front view schematically showing a second embodiment of the present invention, and the same parts as in the first embodiment are given the same reference numerals.

この実施例では、ホルダ2及びローテーションユニット
3を垂直軸に対して略45°に傾斜させた上で、ここに
垂直方向に向けた第2のローテーションユニット6を付
設している。したがって、この実施例では、ホルダ2は
ローテーションユニット3の軸廻りに回転されるのと同
時に、第2のローテーションユニット6により垂直軸廻
りにも回転され、結果として半導体基板1の回転運動の
デイメンジョンを2としている。
In this embodiment, the holder 2 and the rotation unit 3 are inclined at approximately 45 degrees with respect to the vertical axis, and a second rotation unit 6 oriented vertically is attached thereto. Therefore, in this embodiment, while the holder 2 is rotated around the axis of the rotation unit 3, it is also rotated around the vertical axis by the second rotation unit 6, and as a result, the dimension of the rotational movement of the semiconductor substrate 1 is changed. John is numbered 2.

これにより、ターゲット4に対する半導体基板1の相対
位置を3次元的に変化させ、成膜の均一性を更に改善す
るとともに、段差部でのステップカバレッジも改善でき
る効果がある。
This has the effect of three-dimensionally changing the relative position of the semiconductor substrate 1 with respect to the target 4, further improving the uniformity of film formation, and improving step coverage at the stepped portion.

なお、半導体基板を固定し、ターゲットを相対回転可能
な構成としてもよい。
Note that the semiconductor substrate may be fixed and the target may be relatively rotatable.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、半導体基板とターゲット
との相対位置を変化させる機構を備えているので、ター
ゲットと半導体基板との相対位置変化に伴って、半導体
基板に付着されるターゲットからのターゲツト材の付着
方向が変化され、半導体基板に形成する成膜の面内ばら
つきを均一にし、かつ段差部でのステップカバレッジを
改善できる効果がある。
As explained above, since the present invention is equipped with a mechanism for changing the relative position between the semiconductor substrate and the target, as the relative position between the target and the semiconductor substrate changes, the target attached to the semiconductor substrate can be removed. The direction in which the material is attached is changed, which has the effect of making uniform in-plane variations in the film formed on the semiconductor substrate and improving step coverage at stepped portions.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1実施例の模式的な正面図、第2図
は本発明の第2実施例の模式的な正面図である。 1・・・半導体基板、2・・・ホルダ、3・・・ローテ
ーションユニット、4・・・ターゲット、5・・・スパ
ッタ電源、6・・・第2のローテーションユニット。
FIG. 1 is a schematic front view of a first embodiment of the invention, and FIG. 2 is a schematic front view of a second embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Holder, 3... Rotation unit, 4... Target, 5... Sputter power supply, 6... Second rotation unit.

Claims (1)

【特許請求の範囲】[Claims] 1、成膜を行う半導体基板と、この半導体基板に対向配
置した成膜材料としてのターゲットとを備えるスパッタ
装置において、前記半導体基板とターゲットの相対位置
を変化させる機構を備えることを特徴とするスパッタ装
置。
1. A sputtering apparatus comprising a semiconductor substrate on which a film is to be formed and a target as a film-forming material placed opposite to the semiconductor substrate, the sputtering apparatus comprising a mechanism for changing the relative position of the semiconductor substrate and the target. Device.
JP21793188A 1988-08-31 1988-08-31 Sputtering device Pending JPH0266170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21793188A JPH0266170A (en) 1988-08-31 1988-08-31 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21793188A JPH0266170A (en) 1988-08-31 1988-08-31 Sputtering device

Publications (1)

Publication Number Publication Date
JPH0266170A true JPH0266170A (en) 1990-03-06

Family

ID=16711961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21793188A Pending JPH0266170A (en) 1988-08-31 1988-08-31 Sputtering device

Country Status (1)

Country Link
JP (1) JPH0266170A (en)

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