JPS631355U - - Google Patents
Info
- Publication number
- JPS631355U JPS631355U JP9481386U JP9481386U JPS631355U JP S631355 U JPS631355 U JP S631355U JP 9481386 U JP9481386 U JP 9481386U JP 9481386 U JP9481386 U JP 9481386U JP S631355 U JPS631355 U JP S631355U
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- light shielding
- insulating film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Description
第１図は、本考案の薄膜トランジスタを示す断
面図、第２図は、従来構造の薄膜トランジスタを
示す断面図である。
１，１′…ガラス基板、２，２′…ゲート電極
、３，３′…ゲート絶縁膜、４，４′…半導体膜
、５，５′…ドレイン電極、６，６′…ソース電
極、７，７′…チヤネル保護用絶縁膜、８，８′
…遮光膜。
FIG. 1 is a sectional view showing a thin film transistor of the present invention, and FIG. 2 is a sectional view showing a thin film transistor having a conventional structure. 1, 1'... Glass substrate, 2, 2'... Gate electrode, 3, 3'... Gate insulating film, 4, 4'... Semiconductor film, 5, 5'... Drain electrode, 6, 6'... Source electrode, 7 , 7'... Insulating film for channel protection, 8, 8'
...Light-shielding film.
Claims (1)
、ドレイン電極並びにソース電極、チヤンネル保
護用絶縁膜、及び遮光膜を順次積層してなり、上
記遮光膜を２．０ｅＶの光に対して１．０×１０
５cm−１以上の光吸収係数を有する非晶質半導体
膜にて構成した事を特徴とする薄膜トランジスタ
。 A gate electrode, a gate insulating film, a semiconductor film, a drain electrode, a source electrode, a channel protection insulating film, and a light shielding film are sequentially laminated on a substrate, and the light shielding film has a resistance of 1.0 to 2.0 eV light. ×10
A thin film transistor comprising an amorphous semiconductor film having a light absorption coefficient of 5 cm -1 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9481386U JPS631355U (en) | 1986-06-20 | 1986-06-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9481386U JPS631355U (en) | 1986-06-20 | 1986-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS631355U true JPS631355U (en) | 1988-01-07 |
Family
ID=30958651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9481386U Pending JPS631355U (en) | 1986-06-20 | 1986-06-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS631355U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0943632A (en) * | 1995-05-19 | 1997-02-14 | Nec Corp | Thin film transistor array |
-
1986
- 1986-06-20 JP JP9481386U patent/JPS631355U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0943632A (en) * | 1995-05-19 | 1997-02-14 | Nec Corp | Thin film transistor array |
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