JPS6313372A - Darlington transistor - Google Patents

Darlington transistor

Info

Publication number
JPS6313372A
JPS6313372A JP15737586A JP15737586A JPS6313372A JP S6313372 A JPS6313372 A JP S6313372A JP 15737586 A JP15737586 A JP 15737586A JP 15737586 A JP15737586 A JP 15737586A JP S6313372 A JPS6313372 A JP S6313372A
Authority
JP
Japan
Prior art keywords
emitter
output stage
transistor
ballast resistor
stage transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15737586A
Other languages
Japanese (ja)
Inventor
Shinichi Ito
伸一 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15737586A priority Critical patent/JPS6313372A/en
Publication of JPS6313372A publication Critical patent/JPS6313372A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To inhibit the increase of collector-emitter saturation voltage and base-emitter saturation voltage to half or one third, and to spread the area of safety operation by connecting an emitter ballast resistor in series with only an emitter for an output stage transistor. CONSTITUTION:When drive stage transistors 11 and output stage transistors 12 are Darlington-connected, emitter ballast resistors 2 consisting of polycrystalline silicon applied onto substrates such as semiconductor substrates through oxide films are connected only to emitters 1 for the output stage transistors 12, and no ballast resistor is connected to emitters 1 for the drive stage transistors 11.

Description

【発明の詳細な説明】[Detailed description of the invention] 【発明の属する技術分野】[Technical field to which the invention pertains]

本発明は、駆動段トランジスタのエミッタを出力段トラ
ンジスタのベースに接続したダーリントントランジスタ
に関する。The present invention relates to a Darlington transistor in which the emitter of a drive stage transistor is connected to the base of an output stage transistor.

【従来技術とその問題点】[Prior art and its problems]

トランジスタの安全動作領域を拡大するために二次降伏
を起きにく（する対策として、エミ７りに直列のエミッ
タバラスト抵抗を挿入することが知られている。高出力
トランジスタとして、エミッタ形状を第２図（ａ）に示
すようにエミッタ形状２１をくし歯型にしてベース領域
２２と噛み合わせたり、第２図（ｂｌ、＋１１りに示す
ようにメンシュマルチエミッタ型にしたりする場合は、
第３図に示すように各エミッタ１にエミッタバラスト抵
抗２を接続することが行われている。このようなエミッ
タバラスト抵抗は、例えば多結晶シリコンに代表される
半絶縁層を被着することにより実施されている。ところ
がダーリントントランジスタの各トランジスタのエミッ
タにエミッタバラスト抵抗を接続すると、抵抗による電
圧降下がダーリントン接続の段数口だけ発生するため、
コレクタ・エミッタ飽和電圧Ｖ　ＣＩＥ　ＴｆｉａＬ＋
＋ベース・エミッタ飽和電圧ｖ１□□。 の値が大きくなり、ロスの増加、制御性能の悪化を生ず
る欠点がある。It is known to insert an emitter ballast resistor in series with the emitter as a measure to prevent secondary breakdown from occurring in order to expand the safe operating area of the transistor. In the case where the emitter shape 21 is made into a comb tooth shape and meshes with the base region 22 as shown in FIG. 2(a), or into a mensch multi-emitter shape as shown in FIG.
As shown in FIG. 3, an emitter ballast resistor 2 is connected to each emitter 1. Such emitter ballast resistors are implemented, for example, by applying a semi-insulating layer, typically polycrystalline silicon. However, if an emitter ballast resistor is connected to the emitter of each Darlington transistor, the voltage drop due to the resistor will occur as many times as there are Darlington connection stages.
Collector-emitter saturation voltage V CIE TfiaL+
+Base-emitter saturation voltage v1□□. This has the drawback that the value of is increased, resulting in increased loss and deterioration of control performance.

【発明の゛目的］ 本発明は、上述の欠点を低減させてしかも安全動作領域の拡大されたダーリントントランジスタを提供することを目的とする。 【発明の要点】[Object of the invention] SUMMARY OF THE INVENTION It is an object of the present invention to provide a Darlington transistor which reduces the above-mentioned drawbacks and has an expanded safe operating area. [Key points of the invention]

本発明は、ダーリントントランジスタの安全動作領域は
出力段トランジスタに依存することに着目し、出力段ト
ランジスタのエミッタのみエミッタバラスト抵抗を直列
接続して二次降伏を防止し、駆動段側のトランジスタに
はエミッタバラスト抵抗を設けないで他の特性低下を最
小限に止めることにより上記の目的を達成するものであ
る。The present invention focuses on the fact that the safe operating area of a Darlington transistor depends on the output stage transistor, and connects an emitter ballast resistor in series only to the emitter of the output stage transistor to prevent secondary breakdown. The above object is achieved by minimizing deterioration of other characteristics without providing an emitter ballast resistor.

【発明の実施例】[Embodiments of the invention]

第１図は本発明の一実施例を示し、駆動段トランジスタ
１１と出力段トランジスタ１２とがダーリントン接続さ
れている場合、出力段トランジスタ１２のエミッタ１に
のみ、例えば半導体基板上に酸化膜を介して被着した多
結晶シリコンよりなるエミッタバラスト抵抗２を接続し
、駆動段トランジスタ１１のエミッタ１にはバラスト抵
抗を接続しない。 第４図は、ダーリントン接続が３段で構成された場合の
別の実施例を示すもので、最終の出力段トランジスタ４
３のエミッタ１のみにエミッタバラスト抵抗２を直列接
続しており、最前段トランジスタ４１．中段トランジス
タ４２にはエミッタバラスト抵抗を設けない構成である
。FIG. 1 shows an embodiment of the present invention, in which when a drive stage transistor 11 and an output stage transistor 12 are connected in Darlington, only the emitter 1 of the output stage transistor 12 is connected, for example, through an oxide film on a semiconductor substrate. An emitter ballast resistor 2 made of polycrystalline silicon deposited on the substrate is connected, and no ballast resistor is connected to the emitter 1 of the drive stage transistor 11. FIG. 4 shows another embodiment in which the Darlington connection is composed of three stages, where the final output stage transistor 4
An emitter ballast resistor 2 is connected in series only to the emitter 1 of the first stage transistor 41. The middle stage transistor 42 is configured without an emitter ballast resistor.

【発明の効果】【Effect of the invention】

本発明によれば、ダーリントントランジスタにおいてエ
ミッタバラスト抵抗を出力段トランジスタのエミッタに
のみ接続し、他のトランジスタには接続しないことによ
り、ＶＣＺ。□１．■□３．ｔ。 の増大を１／２あるいは１／３に押さえて、安全動作領
域の拡大を可能にする。According to the present invention, by connecting the emitter ballast resistor in the Darlington transistor only to the emitter of the output stage transistor and not to other transistors, the VCZ. □1. ■□3. t. This makes it possible to expand the safe operation area by suppressing the increase in the amount of noise to 1/2 or 1/3.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例の等価回路図、第２図は高出
力トランジスタのエミツタ面の平面図、第３図はエミッ
タバラスト抵抗を有するトランジスタの等価回路図、第
４図は本発明の別の実施例の等価回路図である。 ｌ：エミッタ、２：エミッタバラスト抵抗、１１：駆動
段トランジスタ、１２．４３：出力段トランジスタ、４
１：最前段トランジスタ、４２：中段トランジスタ。Fig. 1 is an equivalent circuit diagram of an embodiment of the present invention, Fig. 2 is a plan view of the emitter surface of a high-output transistor, Fig. 3 is an equivalent circuit diagram of a transistor having an emitter ballast resistor, and Fig. 4 is a diagram of the present invention. FIG. 3 is an equivalent circuit diagram of another embodiment of FIG. l: Emitter, 2: Emitter ballast resistance, 11: Drive stage transistor, 12.43: Output stage transistor, 4
1: Front stage transistor, 42: Middle stage transistor.

Claims (1)

【特許請求の範囲】[Claims] １）出力段トランジスタのエミッタにのみエミッタバラ
スト抵抗が直列接続されたことを特徴とするダーリント
ントランジスタ。1) A Darlington transistor characterized in that an emitter ballast resistor is connected in series only to the emitter of the output stage transistor.
JP15737586A 1986-07-04 1986-07-04 Darlington transistor Pending JPS6313372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15737586A JPS6313372A (en) 1986-07-04 1986-07-04 Darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15737586A JPS6313372A (en) 1986-07-04 1986-07-04 Darlington transistor

Publications (1)

Publication Number Publication Date
JPS6313372A true JPS6313372A (en) 1988-01-20

Family

ID=15648282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15737586A Pending JPS6313372A (en) 1986-07-04 1986-07-04 Darlington transistor

Country Status (1)

Country Link
JP (1) JPS6313372A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235703A (en) * 1985-08-08 1987-02-16 シ−メンス、アクチエンゲゼルシヤフト Power transistor apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235703A (en) * 1985-08-08 1987-02-16 シ−メンス、アクチエンゲゼルシヤフト Power transistor apparatus

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