JPS6313340B2 - - Google Patents

Info

Publication number
JPS6313340B2
JPS6313340B2 JP56093147A JP9314781A JPS6313340B2 JP S6313340 B2 JPS6313340 B2 JP S6313340B2 JP 56093147 A JP56093147 A JP 56093147A JP 9314781 A JP9314781 A JP 9314781A JP S6313340 B2 JPS6313340 B2 JP S6313340B2
Authority
JP
Japan
Prior art keywords
substrate
insulating film
temperature
vapor phase
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56093147A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57208146A (en
Inventor
Kazutaka Kamitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56093147A priority Critical patent/JPS57208146A/ja
Publication of JPS57208146A publication Critical patent/JPS57208146A/ja
Publication of JPS6313340B2 publication Critical patent/JPS6313340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
JP56093147A 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor Granted JPS57208146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56093147A JPS57208146A (en) 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56093147A JPS57208146A (en) 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor

Publications (2)

Publication Number Publication Date
JPS57208146A JPS57208146A (en) 1982-12-21
JPS6313340B2 true JPS6313340B2 (cg-RX-API-DMAC10.html) 1988-03-25

Family

ID=14074415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56093147A Granted JPS57208146A (en) 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57208146A (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
KR101067902B1 (ko) 2001-12-26 2011-09-27 맷슨 테크날러지 캐나다 인코퍼레이티드 온도 측정 및 열처리 방법과 시스템
AU2003287837A1 (en) 2002-12-20 2004-07-14 Vortek Industries Ltd Methods and systems for supporting a workpiece and for heat-treating the workpiece
JP5630935B2 (ja) 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus

Also Published As

Publication number Publication date
JPS57208146A (en) 1982-12-21

Similar Documents

Publication Publication Date Title
US5312771A (en) Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer
US5433791A (en) MBE apparatus with photo-cracker cell
JPS6313340B2 (cg-RX-API-DMAC10.html)
WO1997037768A1 (en) MODIFYING SOLID CRYSTALLIZATION KINETICS FOR A-Si FILMS
US4555300A (en) Method for producing single crystal layers on insulators
US5225367A (en) Method for manufacturing an electronic device
JPS63299322A (ja) 単結晶シリコン膜の形成方法
JP3084395B2 (ja) 半導体薄膜の堆積方法
JP3082164B2 (ja) レーザー処理方法及び半導体装置
JPH0345534B2 (cg-RX-API-DMAC10.html)
JPH0652714B2 (ja) 薄膜材料の製造法
JP3208201B2 (ja) 多結晶半導体薄膜の製造方法
GB2202236A (en) Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition
JPH0491427A (ja) 化学気相成長装置
JPH11195613A (ja) 紫外線アニール装置およびアニール方法
JP2550998B2 (ja) 単結晶シリコン膜の形成方法
JPS60127745A (ja) 半導体基板
JPH0374838A (ja) エピタキシャル成長法
Wiesmann Method of producing hydrogenated amorphous silicon film
JPS61145818A (ja) 半導体薄膜の熱処理方法
JPS61179523A (ja) 単結晶薄膜形成方法
JPS59172715A (ja) 分子線発生装置
JPH036015A (ja) 半導体膜
JPH0480878B2 (cg-RX-API-DMAC10.html)
JPS6175517A (ja) 化合物半導体基板のアニ−ル法