JPS6313338B2 - - Google Patents

Info

Publication number
JPS6313338B2
JPS6313338B2 JP56066971A JP6697181A JPS6313338B2 JP S6313338 B2 JPS6313338 B2 JP S6313338B2 JP 56066971 A JP56066971 A JP 56066971A JP 6697181 A JP6697181 A JP 6697181A JP S6313338 B2 JPS6313338 B2 JP S6313338B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
film
protective film
semiconductor
surface protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56066971A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57183039A (en
Inventor
Akio Mimura
Yasuhiro Mochizuki
Tokuo Watanabe
Tsutomu Yao
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56066971A priority Critical patent/JPS57183039A/ja
Publication of JPS57183039A publication Critical patent/JPS57183039A/ja
Publication of JPS6313338B2 publication Critical patent/JPS6313338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)
JP56066971A 1981-05-06 1981-05-06 Manufacture of semiconductor device Granted JPS57183039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56066971A JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56066971A JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57183039A JPS57183039A (en) 1982-11-11
JPS6313338B2 true JPS6313338B2 (OSRAM) 1988-03-25

Family

ID=13331412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56066971A Granted JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57183039A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216385U (OSRAM) * 1988-07-19 1990-02-01
JPH0329737U (OSRAM) * 1989-07-31 1991-03-25
JPH0399645U (OSRAM) * 1990-01-31 1991-10-18

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865644B2 (ja) * 2007-06-25 2012-02-01 セイコープレシジョン株式会社 アクチュエータ及びコイル枠

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216385U (OSRAM) * 1988-07-19 1990-02-01
JPH0329737U (OSRAM) * 1989-07-31 1991-03-25
JPH0399645U (OSRAM) * 1990-01-31 1991-10-18

Also Published As

Publication number Publication date
JPS57183039A (en) 1982-11-11

Similar Documents

Publication Publication Date Title
US11088005B2 (en) Electrostatic chuck having thermally isolated zones with minimal crosstalk
US5849163A (en) Process for formation of epitaxial film
JP2981102B2 (ja) 薄膜トランジスタの製造方法
JP3164956B2 (ja) Cvdにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法
EP0157052A1 (en) Low resistivity tungsten silicon composite film
JP2680083B2 (ja) 半導体基板及びその製造方法
TW200830942A (en) Contamination reducing liner for inductively coupled chamber
US20210111059A1 (en) Wafer Heater With Backside And Integrated Bevel Purge
CN112260660A (zh) 一种复合基底、复合薄膜及其制备方法
WO2022163052A1 (ja) SiCエピタキシャルウェハの製造装置、及びSiCエピタキシャルウェハの製造方法
JP7400389B2 (ja) 炭化珪素多結晶膜、炭化珪素多結晶膜の製造方法および炭化珪素多結晶膜の成膜装置
JPS6313338B2 (OSRAM)
JPS61272922A (ja) 半導体装置ウエハ−基板とその製造方法
JP2018190813A (ja) 炭化珪素エピタキシャル成長装置、炭化珪素エピタキシャルウエハの製造方法及び炭化珪素半導体装置の製造方法
JP2911694B2 (ja) 半導体基板及びその製造方法
US4164436A (en) Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source
JP3424069B2 (ja) エピタキシャルシリコン基板の製造方法
CN118866664A (zh) 一种mos用硅外延片防裂片的制备方法
JP3038524B2 (ja) 半導体製造装置
US3915764A (en) Sputtering method for growth of thin uniform layers of epitaxial semiconductive materials doped with impurities
CN116774469A (zh) 一种器件的制备方法及结构
US3432417A (en) Low power density sputtering on semiconductors
JPH0629222A (ja) 半導体装置の製造方法
CN112750686B (zh) 一种多层衬底、电子元器件及多层衬底制备方法
CN115775734B (zh) Sic vdmos器件及提高sic器件良率和可靠性的方法