JPS63131584A - 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 - Google Patents

切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法

Info

Publication number
JPS63131584A
JPS63131584A JP27675586A JP27675586A JPS63131584A JP S63131584 A JPS63131584 A JP S63131584A JP 27675586 A JP27675586 A JP 27675586A JP 27675586 A JP27675586 A JP 27675586A JP S63131584 A JPS63131584 A JP S63131584A
Authority
JP
Japan
Prior art keywords
gate electrode
static induction
notched
insulated gate
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27675586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03793B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
潤一 西澤
Nobuo Takeda
宣生 竹田
Sohe Suzuki
鈴木　壮兵衛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP27675586A priority Critical patent/JPS63131584A/ja
Priority to EP95114168A priority patent/EP0690513B1/en
Priority to DE3752273T priority patent/DE3752273T2/de
Priority to EP87310185A priority patent/EP0268472B1/en
Priority to DE3752255T priority patent/DE3752255T2/de
Priority to EP93101675A priority patent/EP0547030B1/en
Priority to DE87310185T priority patent/DE3789003T2/de
Priority to EP92101661A priority patent/EP0481965B1/en
Priority to DE3752215T priority patent/DE3752215T2/de
Publication of JPS63131584A publication Critical patent/JPS63131584A/ja
Publication of JPH03793B2 publication Critical patent/JPH03793B2/ja
Priority to US07/752,934 priority patent/US5115287A/en
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP27675586A 1986-11-19 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 Granted JPS63131584A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP27675586A JPS63131584A (ja) 1986-11-21 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法
EP95114168A EP0690513B1 (en) 1986-11-19 1987-11-10 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE3752273T DE3752273T2 (de) 1986-11-19 1987-11-10 Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
EP93101675A EP0547030B1 (en) 1986-11-19 1987-11-18 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE3752255T DE3752255T2 (de) 1986-11-19 1987-11-18 Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
EP87310185A EP0268472B1 (en) 1986-11-19 1987-11-18 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE87310185T DE3789003T2 (de) 1986-11-19 1987-11-18 Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung.
EP92101661A EP0481965B1 (en) 1986-11-19 1987-11-18 Method of manufacturing step-cut insulated gate static induction transistors
DE3752215T DE3752215T2 (de) 1986-11-19 1987-11-18 Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe
US07/752,934 US5115287A (en) 1986-11-19 1991-08-30 Step-cut insulated gate static induction transistors and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27675586A JPS63131584A (ja) 1986-11-21 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63131584A true JPS63131584A (ja) 1988-06-03
JPH03793B2 JPH03793B2 (enrdf_load_stackoverflow) 1991-01-08

Family

ID=17573890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27675586A Granted JPS63131584A (ja) 1986-11-19 1986-11-21 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63131584A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226773A (ja) * 1989-02-28 1990-09-10 Shiyoudenriyoku Kosoku Tsushin Kenkyusho:Kk 切り込み型絶縁ゲート静電誘導トランジスタ及びその製造方法
JPH02226772A (ja) * 1989-02-28 1990-09-10 Shiyoudenriyoku Kosoku Tsushin Kenkyusho:Kk 切り込み型絶縁ゲート静電誘導トランジスタ及びその製造方法
JPH0492473A (ja) * 1990-08-07 1992-03-25 Semiconductor Energy Lab Co Ltd 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226773A (ja) * 1989-02-28 1990-09-10 Shiyoudenriyoku Kosoku Tsushin Kenkyusho:Kk 切り込み型絶縁ゲート静電誘導トランジスタ及びその製造方法
JPH02226772A (ja) * 1989-02-28 1990-09-10 Shiyoudenriyoku Kosoku Tsushin Kenkyusho:Kk 切り込み型絶縁ゲート静電誘導トランジスタ及びその製造方法
JPH0492473A (ja) * 1990-08-07 1992-03-25 Semiconductor Energy Lab Co Ltd 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法

Also Published As

Publication number Publication date
JPH03793B2 (enrdf_load_stackoverflow) 1991-01-08

Similar Documents

Publication Publication Date Title
JP3082671B2 (ja) トランジスタ素子及びその製造方法
US5270257A (en) Method of making metal oxide semiconductor field effect transistors with a lightly doped drain structure having a recess type gate
JP3462301B2 (ja) 半導体装置及びその製造方法
US4951102A (en) Trench gate VCMOS
US20020036290A1 (en) Semiconductor device having MIS field effect transistors or three-dimensional structure
US5654561A (en) Insulated gate bipolar transistor with multiple buffer layers
JP3455452B2 (ja) 半導体デバイス及びその製造方法
JPH0734475B2 (ja) 半導体装置
JP3282375B2 (ja) 相補型絶縁ゲート電界効果トランジスタ
JPH0237777A (ja) 縦型電界効果トランジスタ
KR100518506B1 (ko) 트랜치 게이트형 전력용 모스 소자 및 그 제조방법
JPH05343686A (ja) 半導体装置およびその製造方法
JP3402548B2 (ja) 半導体装置の製造方法
US5115287A (en) Step-cut insulated gate static induction transistors and method of manufacturing the same
JPS63131584A (ja) 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法
JP2000068372A (ja) 半導体デバイス及びその製造方法
JPS6159543B2 (enrdf_load_stackoverflow)
US7105421B1 (en) Silicon on insulator field effect transistor with heterojunction gate
JPS63131583A (ja) 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法
JP3017838B2 (ja) 半導体装置およびその製造方法
JPH04115538A (ja) 半導体装置
KR100405450B1 (ko) 포켓형 접합층 구조를 가지는 dmos 트랜지스터 및그 제조 방법
JPH06181312A (ja) 半導体装置及びその製造方法
KR100303356B1 (ko) 더블 게이트 구조를 갖는 에스오아이 소자 및 그 제조방법
JPS62286281A (ja) 半導体装置とその製造方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term