JPS6312388B2 - - Google Patents
Info
- Publication number
- JPS6312388B2 JPS6312388B2 JP56180099A JP18009981A JPS6312388B2 JP S6312388 B2 JPS6312388 B2 JP S6312388B2 JP 56180099 A JP56180099 A JP 56180099A JP 18009981 A JP18009981 A JP 18009981A JP S6312388 B2 JPS6312388 B2 JP S6312388B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- gate
- polysilicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 229920005591 polysilicon Polymers 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56180099A JPS5880870A (ja) | 1981-11-09 | 1981-11-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56180099A JPS5880870A (ja) | 1981-11-09 | 1981-11-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5880870A JPS5880870A (ja) | 1983-05-16 |
| JPS6312388B2 true JPS6312388B2 (ko) | 1988-03-18 |
Family
ID=16077408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56180099A Granted JPS5880870A (ja) | 1981-11-09 | 1981-11-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5880870A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920013709A (ko) * | 1990-12-21 | 1992-07-29 | 김광호 | 불휘발성 반도체 메모리장치 및 그 제조방법 |
| KR950011983B1 (ko) * | 1992-11-23 | 1995-10-13 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
-
1981
- 1981-11-09 JP JP56180099A patent/JPS5880870A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5880870A (ja) | 1983-05-16 |
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