JPS63118340A - Treatment of plastic substrate and device therefor - Google Patents

Treatment of plastic substrate and device therefor

Info

Publication number
JPS63118340A
JPS63118340A JP61264723A JP26472386A JPS63118340A JP S63118340 A JPS63118340 A JP S63118340A JP 61264723 A JP61264723 A JP 61264723A JP 26472386 A JP26472386 A JP 26472386A JP S63118340 A JPS63118340 A JP S63118340A
Authority
JP
Japan
Prior art keywords
substrate
plastic
plastic substrate
thin film
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61264723A
Other languages
Japanese (ja)
Other versions
JPH075770B2 (en
Inventor
Akira Morinaka
森中 彰
Takuji Yoshida
卓史 吉田
Norihiro Funakoshi
宣博 舩越
Akihiko Yamaji
昭彦 山路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP61264723A priority Critical patent/JPH075770B2/en
Publication of JPS63118340A publication Critical patent/JPS63118340A/en
Publication of JPH075770B2 publication Critical patent/JPH075770B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To remove water in a plastic substrate effectively and to make it possible to form a high-quality recording thin film, by irradiating the plastic substrate with high frequency of specific number of cycles in a high vacuum before a recording thin film or a reflecting film is formed. CONSTITUTION:Before a recording thin film or a reflecting thin film is formed, a plastic substrate is irradiated in high vacuum of 1X10<-7>-10<-8>Torr with high frequency of number of cycles (1-50GHz number of cycles) which does not excite plastic molecules and selectively excites only water molecules in the plastic in order to remove water in the plastic substrate and water in the substrate is rapidly removed without thermally damaging the plastic substrate.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は情報記録を行う光ディスク、パソコン等に用い
るフロッピーディスク、磁気テープ等に使用されるプラ
スチック基板の記録薄膜形成前に行う処理方法と記録薄
膜形成装置に関するものである。更に詳しくはプラスチ
ック基板中の水分を除去せしめ、高品質と同時に量産化
に適した方法及び装置を提供するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a processing method and recording performed before forming a recording thin film on a plastic substrate used in an optical disk for recording information, a floppy disk used in a personal computer, a magnetic tape, etc. The present invention relates to a thin film forming apparatus. More specifically, the present invention provides a method and apparatus for removing moisture from plastic substrates, which provides high quality and is suitable for mass production.

〔従来の技術〕[Conventional technology]

最近レーザ光等を用いて直径が数ミクロン程度の記録ビ
ットを基板上の記録薄膜に記録し、読出しを行う光記録
の技術が活発に研究されている。
2. Description of the Related Art Recently, optical recording technology in which recording bits with a diameter of several microns are recorded on a recording thin film on a substrate using a laser beam or the like and read out is being actively researched.

光記録用の記録媒体としては例えばディスク基板の場合
、レーザ・ビデオディスク、コンパクト・ディスクに代
表される読出し専用タイプと、ユーザが任意の情報を記
録することが可能な記録可能型に2分される。
Recording media for optical recording, for example, in the case of disk substrates, are divided into read-only types such as laser video discs and compact discs, and recordable types on which the user can record arbitrary information. Ru.

前者はあらかじめ記録ピットの凹凸を形成した金型にお
いてインジェクション成形されたのち、反射膜を設けた
ものであり、後者は記録可能ではあるが消去は不可能で
ある追記型(write−once )と、記録・消去
が可能な相変態型書替え光ディスク、光磁気型書替え光
ディスクに細分される。しかしいずれの型の光ディスク
においても基板上に記録薄膜或いは反射膜を設けた構造
が基本となっている。
The former type is injection molded in a mold with recording pits formed in advance, and then a reflective film is provided.The latter type is a write-once type, which allows recording but cannot erase data. They are subdivided into phase change type rewritable optical disks that can record and erase data, and magneto-optical type rewritable optical disks. However, the basic structure of any type of optical disk is that a recording thin film or a reflective film is provided on a substrate.

この基本構造を第1図に示す。第1図の//はプラスチ
ック又はガラス等の基板、/2は金属の記録薄膜或いは
反射膜を示している。/3はトラック案内溝を示す。
This basic structure is shown in FIG. In FIG. 1, // indicates a substrate made of plastic or glass, and /2 indicates a recording thin film or reflective film made of metal. /3 indicates a track guide groove.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このような構造の記録媒体において最も問題となるのは
記録薄膜或いは反射膜が大気中の水分等の影響で酸化さ
れることである。なぜならば、記録薄膜及び反射膜は適
当な光反射率を持たなければならないが、この記録薄膜
が酸化されると光反射率が落ち効率が悪くなるからであ
る。
The biggest problem with recording media having such a structure is that the recording thin film or reflective film is oxidized by moisture in the atmosphere. This is because the recording thin film and the reflective film must have appropriate light reflectance, but when the recording thin film is oxidized, the light reflectance decreases and efficiency deteriorates.

ふ このため従来は第2図に示すよう記録薄膜7.2の外部
に面する側を保護膜/グでコートし、外部大気からの水
分、及びガス等より記録薄膜2反射膜を保護することが
通例である。
Therefore, conventionally, as shown in Fig. 2, the side of the recording thin film 7.2 facing the outside is coated with a protective film/g to protect the recording thin film 2 reflective film from moisture, gas, etc. from the external atmosphere. is customary.

他方、記録薄膜/2と接する基板としては従来ガラス等
の非晶質物質が用いられることが多かったが、ガラス等
は熱伝導率が高いだめレーザ光で書込み等を行う時、書
込みに必要な熱を逃がしてしまい効率が悪かった。この
ため熱伝導率のより小さいプラスチックが用いられ効率
が改善されるようになった。
On the other hand, amorphous materials such as glass have conventionally been used as the substrate in contact with the recording thin film/2, but glass has high thermal conductivity, so when writing with laser light, it is necessary for writing. It was inefficient because it allowed heat to escape. This has led to the use of plastics with lower thermal conductivity to improve efficiency.

ところが基板にプラスチックを用いる時には、プラスチ
ックの内部に含まれる水分が記録薄膜或いは反射膜へ浸
透し、記録薄膜や反射膜を酸化させる現象がみいだされ
た。
However, when plastic is used for the substrate, a phenomenon has been discovered in which moisture contained within the plastic permeates into the recording thin film or reflective film, oxidizing the recording thin film or reflective film.

このようなプラスチック基板内の水分による劣化は、T
b−Fe−C,oに代表される光磁気型書替え媒体、T
e系合金を中心とした相変態型書替え媒体用の記録薄膜
において特に顕著で、光ディスクの特性の安定化、経時
変化に対する重要な問題点となっていた。
This kind of deterioration due to moisture in the plastic substrate is T
b-Fe-C, o magneto-optical rewritable media, T
This is particularly noticeable in recording thin films for phase change type rewritable media made mainly of e-based alloys, and has become an important problem in stabilizing the characteristics of optical discs and in preventing changes over time.

このような問題点を解決するため、従来は第3図に示す
ように基板/lと記録薄膜12の間に分離層/jを設け
るか、又は図示は省略するがプラスチック基板//を記
録薄膜7.2を製作する以前に十分真空中で脱水乾燥さ
せる方法が用いられてきた。
In order to solve such problems, conventionally, as shown in FIG. 3, a separation layer /j is provided between the substrate /l and the recording thin film 12, or, although not shown, the plastic substrate // is connected to the recording thin film. Before manufacturing 7.2, a method of sufficiently dehydrating and drying in a vacuum was used.

前者では水分の侵入をふせぐため分離層/!として5i
02のスパッタ膜等が用いられるが、記録薄膜或いは反
射膜形成以前に分離膜をスパッタ或いは蒸着で形成する
必要があり工程が増加して煩雑であると共に5i02膜
の熱伝導率が高いためレーザ光等で記録薄膜に記録する
際書込みに必要な熱をこの分離膜が逃がしてしまいガラ
ス基板を用いるのと同様に書込み時の効率を低下させる
欠点がある。
In the former, a separation layer is used to prevent moisture from entering. as 5i
A 5i02 sputtered film or the like is used, but it is necessary to form a separation film by sputtering or vapor deposition before forming a recording thin film or a reflective film, which increases the number of steps and is complicated, and the high thermal conductivity of the 5i02 film makes it difficult to use laser light. When recording on a thin recording film, the separation film releases the heat necessary for writing, resulting in a disadvantage that the writing efficiency is reduced, similar to when a glass substrate is used.

また分離膜/!が厚くなると内部応力等のため、クラッ
ク、剥離が生ずることもあった。
Separation membrane again/! When it becomes thick, cracks and peeling may occur due to internal stress, etc.

一方、後者は基板内の水分を除去する本質的な方法であ
るが、円盤状に加工されたプラスチック基板を脱水乾燥
する際、プラスチック基板の変形やそりを抑えるために
、加熱温度は通常使用するプラスチック基盤材料のTg
(ガラス転移点)以下に抑える必要がある。
On the other hand, the latter method is essentially a method for removing moisture within the substrate, but when dehydrating and drying a plastic substrate processed into a disk shape, the heating temperature is usually used to suppress deformation and warping of the plastic substrate. Tg of plastic base material
(glass transition point) or less.

この温度は通常のプラスチック材料では!O°C〜70
”Cが限度であり、この温度で真空度を7O−8Tor
r程度にして乾燥させても例えばポリカーボネート基板
では3日程度、アクリル基板では7日以上というように
処理に要する時間が長いので量産化に対して致命的な欠
点となっていた。
This temperature is normal for plastic materials! O°C~70
``C is the limit, and at this temperature the degree of vacuum is 7O-8 Tor.
Even if the substrate is dried at a temperature of about r, the processing time is long, for example, about 3 days for polycarbonate substrates and 7 days or more for acrylic substrates, which is a fatal drawback for mass production.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は以上述べた従来の欠点を改善するため記録薄膜
又は反射膜形成前にプラスチック基板内の水分を除去す
るため高真空内でプラスチック分子を励起せず、プラス
チック中に含有される水分子のみを選択的に励起するよ
うな特定周波数の高周波をプラスチック基板に照射し、
プラスチック基板に熱的ダメージを与える事なく基板内
の水分を迅速に除去するものである。
In order to improve the above-mentioned conventional drawbacks, the present invention removes moisture in the plastic substrate before forming a recording thin film or a reflective film, so that the plastic molecules are not excited in a high vacuum, and only the water molecules contained in the plastic are removed. The plastic substrate is irradiated with a high frequency wave of a specific frequency that selectively excites the
Moisture inside the plastic substrate can be quickly removed without causing thermal damage to the substrate.

〔作 用〕[For production]

本発明による光プラスチック基板の処理方法の原理及び
効果を以下に述べる。
The principles and effects of the optical plastic substrate processing method according to the present invention will be described below.

まず本発明の原理であるが、これはプラスチック基板の
中に含まれる水分のみを選択的に励起・加熱する点であ
る。
First, the principle of the present invention is that only the water contained in the plastic substrate is selectively excited and heated.

従来の技術では真空中でプラスチック基板を加熱して乾
燥させるため、変形、そりを生じない温度の限界はro
′c〜70′Cであった。通常光ディスク用プラスチッ
ク基板に用いられる材料のPMMA (アクリル樹脂)
、PC(ポリカーボネート樹脂)等はディスク加工前の
状態で低湿度状態に調整されており、ディスク成形後で
PMMAの場合水分が0.3−0.μチ、PCの場合水
分が0. /タチ程度である。
In conventional technology, plastic substrates are heated and dried in a vacuum, so the temperature limit that does not cause deformation or warping is RO.
'c~70'C. PMMA (acrylic resin) is a material normally used for plastic substrates for optical discs.
, PC (polycarbonate resin), etc. are adjusted to a low humidity state before disc processing, and in the case of PMMA, the moisture content is 0.3-0. In the case of μchi and PC, the moisture content is 0. /Tachi level.

本発明ではこれら微量に含まれる水分を更に除去するた
め真空中で高周波をプラスチック基板に照射することに
よって、基板中の水分子(1−120分子)のみを選択
的に励起・加熱し、1120分子は基板内を拡散して移
動した後、基板表面に達して真空中に蒸発し除去される
。また基板のプラスチック分子は上記特定周波数では励
起されないから結果として水分子の発熱の熱伝導以外の
加熱は生じないという現象を用いている。
In the present invention, in order to further remove these trace amounts of water, the plastic substrate is irradiated with high frequency waves in a vacuum to selectively excite and heat only the water molecules (1-120 molecules) in the substrate. After diffusing and moving within the substrate, it reaches the substrate surface and is evaporated into vacuum and removed. Also, the phenomenon is used that since the plastic molecules of the substrate are not excited at the above-mentioned specific frequency, no heating occurs as a result other than heat conduction of heat generated by water molecules.

基板内のH20分子に照射する高周波は1420本来の
吸収領域弘0GH2が最も望ましい。しかしH20分子
の誘電損失による発熱を与える周波数の2.≠!GHz
も使用可能であり、実際には/G1−Iz −!r O
GI(zの領域が利用可能である。
The most desirable high frequency for irradiating H20 molecules in the substrate is 1420's original absorption region 0GH2. However, the frequency of 2.0 is high enough to generate heat due to dielectric loss of H20 molecules. ≠! GHz
can also be used, and in fact /G1-Iz-! r O
GI (area of z is available.

他方、上記高周波をプラスチック基板に照射する装置を
考えると、その基板処理チャンバは照射する高周波のモ
ード安定化導波管も兼用するためその大きさは、使用す
る波長の//2の整数倍であればよい。
On the other hand, considering an apparatus that irradiates a plastic substrate with the above-mentioned high frequency waves, the substrate processing chamber also serves as a mode stabilizing waveguide for the high frequency waves to be irradiated, so its size is an integral multiple of //2 of the wavelength used. Good to have.

例えば4tOGH2の高周波の場合、波長はλ−3×1
0106n÷弘0×10=0.7!;口であるからλ/
、2=0.37オ(7)となる。
For example, in the case of a high frequency of 4tOGH2, the wavelength is λ-3×1
0106n÷Hiro0×10=0.7! ;Because it is a mouth, λ/
, 2=0.37o(7).

また/ GHzの高周波の場合、λ=jX1010cm
÷/×/θ9=30αであるからλ/ 2− / ! 
cmとなる。
Also, in the case of high frequency of / GHz, λ=jX1010cm
Since ÷/×/θ9=30α, λ/2−/!
cm.

〔実施例〕〔Example〕

以下本発明の実施例について説明する。 Examples of the present invention will be described below.

〔実施例/〕〔Example/〕

第グ図は本発明の基板処理装置を設けた光デイスク製作
装置の実施例を示す。図中27は予備排気チャンバ、2
2は基板処理チャンバ、23は高周波マグネトロン管、
2’Aは高周波電源、2夕は薄膜形成チャンバ、2乙は
蒸着装置、27はスパッタ装置、2gは基板取出しチャ
ンバ、2りは基板保持部を有する基板搬送装置、を示す
FIG. 3 shows an embodiment of an optical disk manufacturing apparatus equipped with a substrate processing apparatus of the present invention. In the figure, 27 is a preliminary exhaust chamber, 2
2 is a substrate processing chamber, 23 is a high frequency magnetron tube,
2'A is a high frequency power supply, 2 is a thin film forming chamber, 2 is a vapor deposition device, 27 is a sputtering device, 2g is a substrate take-out chamber, and 2 is a substrate transfer device having a substrate holder.

各チャンバから次のチャンバへの基板移動装置の構造は
電子顕微鏡の試料移動装置とほぼ同様である。
The structure of the substrate transfer device from each chamber to the next chamber is substantially similar to the sample transfer device of an electron microscope.

この装置を用いて表/に示す処理時間を通して同一ロッ
トのアクリル基板上にTe薄膜を/jOA蒸着し、該T
e薄膜の基板と反対側の面に劣化を防ぐため5iQ2を
7000にスパッタコートした。
Using this equipment, a Te thin film was deposited on the acrylic substrate of the same lot through the processing time shown in the table.
To prevent deterioration, 5iQ2 was sputter-coated to 7000 on the opposite side of the thin film to the substrate.

実験データを表/に示す。Experimental data are shown in Table/.

表−7 × ピノホールの発生多し Δ   I   I  少し ○   l   l 殆んどなし ◎  I  I なし 本発明による基板処理工程においては明らかにピンホー
ル発生が少なく、また基板変形も生じなかった。
Table 7 × Frequent occurrence of pinholes Δ I I Slightly ○ l l Almost none ◎ I I None In the substrate processing process according to the present invention, the occurrence of pinholes was clearly small, and no substrate deformation occurred.

〔実施例2〕 実施例/と同様の装置を用いてポリカーボネート(PC
)型基板上にTe−Fe−Coの光磁気膜を製作した。
[Example 2] Polycarbonate (PC
) A magneto-optical film of Te-Fe-Co was fabricated on a type substrate.

実験データを表−に示す。Experimental data are shown in Table.

表−一 以上の実施例コにおいても、本発明の処理工程を経た基
板はピンホールを生じにくく、処理も短時間で可能なこ
とがあきらかになった。
In the Examples shown in Table 1 and above, it is clear that the substrates subjected to the treatment process of the present invention are less likely to produce pinholes and can be treated in a short time.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば光デイスク製作に用
いるプラスチック基板を短時間で殆ど完全に脱水処理が
可能である。
As explained above, according to the present invention, it is possible to almost completely dehydrate plastic substrates used for manufacturing optical disks in a short period of time.

また、プラスチック基板中の水分にのみ主として作用す
る高周波加熱によっているため基板を構成するプラスチ
ックには殆ど熱的ダメージを与えることなく基板の内部
まで浸透し水分を除去できる効果がある。加うるに水分
除去後、直ちに薄膜及び保護膜を形成するため、チャン
バから取り出した後の劣化の心配はない。
In addition, since high-frequency heating is applied which mainly acts only on the moisture in the plastic substrate, it has the effect of penetrating into the interior of the substrate and removing moisture without causing almost any thermal damage to the plastic constituting the substrate. In addition, since a thin film and a protective film are formed immediately after removing moisture, there is no need to worry about deterioration after removal from the chamber.

これは従来の方法でアクリル板でIO日程度、ポリカー
ボネートで!日程産前処理に必要であった事を考えると
非常に大きな進歩であシ量産化に与える効果はきわめて
大きい。
This can be done using the traditional method with an acrylic board for about 10 days, and with polycarbonate! Considering that it was necessary for pre-production treatment on a scheduled basis, this is a very big advance, and the effect it has on mass production is extremely large.

また量産化のみならず、製品の性能も大幅に改良された
In addition to mass production, the performance of the product has also been significantly improved.

以上、光デイスク用プラスチック基板について説明した
が、本発明はそれのみに適用されるものでなく、ワード
プロセッサ、パソコン等で用いられるフロッピーディス
ク、コンピュータに用いられる磁気テープ等のようにプ
ラスチック基板、同基材の上に記録薄膜等を有する記憶
部品等についても適用され、その応用範囲は広い。
Although the above description has been made of plastic substrates for optical disks, the present invention is not applicable only to them, but also applies to plastic substrates such as floppy disks used in word processors, personal computers, etc., magnetic tapes used in computers, etc. It is also applied to memory parts having a recording thin film or the like on the material, and its application range is wide.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第λ図、第3図は光ディスクの基本構造を示す
断面図、第≠図は本発明による光デイスク製作装置の概
略図である。 //・・・基板、/2・・・記録薄膜或いは反射膜、/
3・・・トラック案内溝、/llt・・・保護膜、/j
・・・分離膜1.20・・・プラスチック基板、2/・
・・予備排気チャンバ、22・・・基板処理チャンバ、
23・・・高周波マグネトロン含、2≠・・・高周波電
源、2よ・・・薄膜形成チャンバ、2A・・・蒸着装置
、27・・・スパッタ装置、2g・・・基板取出しチャ
ンバ、2り・・−プラスチック基板搬送装置、30・・
・真空排気系。 レーザ゛−t 半1割 た2回 范−′ 図
1, λ, and 3 are sectional views showing the basic structure of an optical disk, and FIG. 3 is a schematic diagram of an optical disk manufacturing apparatus according to the present invention. //... Substrate, /2... Recording thin film or reflective film, /
3... Track guide groove, /llt... Protective film, /j
...Separation membrane 1.20...Plastic substrate, 2/...
...Preliminary exhaust chamber, 22...Substrate processing chamber,
23... High frequency magnetron included, 2≠... High frequency power source, 2... Thin film forming chamber, 2A... Evaporation device, 27... Sputtering device, 2g... Substrate take-out chamber, 2...・-Plastic substrate transfer device, 30...
・Vacuum exhaust system. Laser ゛-t Half 10% 2 times -' Figure

Claims (2)

【特許請求の範囲】[Claims] (1)プラスチック基板を1×10^−^7〜10^−
^8Torrの真空状態におき、且つ周波数が1GHz
〜50GHzの範囲の高周波を該プラスチック基板に照
射して該プラスチック基板の中の水分を除去することを
特徴とするプラスチック基板処理方法。
(1) Plastic board 1 x 10^-^7~10^-
^ Placed in a vacuum state of 8 Torr and with a frequency of 1 GHz
A method for processing a plastic substrate, comprising irradiating the plastic substrate with high frequency waves in the range of ~50 GHz to remove moisture in the plastic substrate.
(2)真空排気装置に連結された基板処理チャンバと、
該基板処理チャンバ内の基板を保持する基板保持部と、
該基板保持部に保持されたプラスチック基板に高周波を
照射するマグネトロン管と、該マグネトロン管の電源か
らなり、該基板処理チャンバは内部の三辺の寸法が照射
する高周波の波長の1/2の整数倍であることを特徴と
するプラスチック基板処理装置。
(2) a substrate processing chamber connected to a vacuum evacuation device;
a substrate holding unit that holds the substrate in the substrate processing chamber;
The substrate processing chamber consists of a magnetron tube that irradiates high frequency waves onto the plastic substrate held in the substrate holder, and a power source for the magnetron tube, and the substrate processing chamber has three internal dimensions that are an integer of 1/2 of the wavelength of the high frequency wave to be irradiated. A plastic substrate processing device characterized by double the size.
JP61264723A 1986-11-06 1986-11-06 Plastic substrate processing method and apparatus Expired - Fee Related JPH075770B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61264723A JPH075770B2 (en) 1986-11-06 1986-11-06 Plastic substrate processing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61264723A JPH075770B2 (en) 1986-11-06 1986-11-06 Plastic substrate processing method and apparatus

Publications (2)

Publication Number Publication Date
JPS63118340A true JPS63118340A (en) 1988-05-23
JPH075770B2 JPH075770B2 (en) 1995-01-25

Family

ID=17407283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61264723A Expired - Fee Related JPH075770B2 (en) 1986-11-06 1986-11-06 Plastic substrate processing method and apparatus

Country Status (1)

Country Link
JP (1) JPH075770B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2055905A2 (en) 2007-02-23 2009-05-06 Mitsubishi Heavy Industries, Ltd. Power turbine test apparatus
JP2010144731A (en) * 2008-12-18 2010-07-01 Dr Ing Hcf Porsche Ag Internal combustion engine with exhaust turbocharger

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2055905A2 (en) 2007-02-23 2009-05-06 Mitsubishi Heavy Industries, Ltd. Power turbine test apparatus
JP2010144731A (en) * 2008-12-18 2010-07-01 Dr Ing Hcf Porsche Ag Internal combustion engine with exhaust turbocharger
US8555636B2 (en) 2008-12-18 2013-10-15 Dr. Ing. H.C.F. Porsche Aktiengesellschaft Internal combustion engine with exhaust gas turbocharger

Also Published As

Publication number Publication date
JPH075770B2 (en) 1995-01-25

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