JPS63115331A - Inspection of semiconductor device - Google Patents
Inspection of semiconductor deviceInfo
- Publication number
- JPS63115331A JPS63115331A JP26225086A JP26225086A JPS63115331A JP S63115331 A JPS63115331 A JP S63115331A JP 26225086 A JP26225086 A JP 26225086A JP 26225086 A JP26225086 A JP 26225086A JP S63115331 A JPS63115331 A JP S63115331A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- pinhole
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000007689 inspection Methods 0.000 title description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002253 acid Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の検査方法、詳しくは、半導体基
板上の窒化シリコン膜中に存在するピンホールの検出方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for inspecting a semiconductor device, and more particularly to a method for detecting pinholes existing in a silicon nitride film on a semiconductor substrate.
従来の技術
ＭＮＯＳ （金属−窒化物一酸化物−半導体〉構造の不
揮発性メモリでは、窒化物、すなわち、窒化シリコン膜
の性能が特性に影響し、とりわけ、窒化シリコン膜中の
ピンホールをなくすことが重要である。In the conventional non-volatile memory of the MNOS (metal-nitride monoxide-semiconductor) structure, the performance of the nitride, that is, the silicon nitride film, affects the characteristics, and in particular, the elimination of pinholes in the silicon nitride film is important. is important.
発明が解決しようとする問題点
ところが、窒化シリコン膜中のピンホールはきわめて微
細であり、電子顕微鏡観察によって検出することが難し
く、その検出手段を工程管理に導入することができなか
った。Problems to be Solved by the Invention However, pinholes in silicon nitride films are extremely minute and difficult to detect by electron microscopy, making it impossible to introduce detection means into process control.
本発明の目的は、このような問題点を解消し、窒化シリ
コン膜中のピンホールを簡易に検出する方法を提供する
ことにある。An object of the present invention is to solve these problems and provide a method for easily detecting pinholes in a silicon nitride film.
問題点を解決するための手段
本発明は、半導体基板上の窒化シリコン膜を、弗硝酸溶
液で侵食して、前記窒化シリコン膜中のピンホールを拡
大して検出する工程をそなえた半導体装置の検査方法で
ある。Means for Solving the Problems The present invention provides a semiconductor device comprising a step of corroding a silicon nitride film on a semiconductor substrate with a fluoronitric acid solution and enlarging and detecting pinholes in the silicon nitride film. This is an inspection method.
作用
本発明によれば、弗硝酸溶液によって窒化シリコン膜が
侵食される過程で、同膜内の微細なピンホールも拡大さ
れ、このピンホール領域の半導体基板表面も順次食刻さ
れるので、顕微鏡観察によって十分に検出可能になり、
そのピンホールの検査が容易になる。According to the present invention, in the process in which the silicon nitride film is eroded by the fluoronitric acid solution, minute pinholes in the film are also enlarged, and the semiconductor substrate surface in the pinhole area is also sequentially etched. be fully detectable by observation;
This makes inspection of the pinhole easier.
実施例 次に、本発明を実施例によって詳しく説明する。Example Next, the present invention will be explained in detail by way of examples.
第１図および第２図は、本発明実施例を表す工程順断面
図であり、これらの各図を参照して、実施例を述べる。FIG. 1 and FIG. 2 are process-order sectional views showing an embodiment of the present invention, and the embodiment will be described with reference to these figures.
まず、第１図のように、シリコン基板１の表面に、極薄
の酸化シリコン膜２を介在させて、窒化シリコン膜３を
形成する。このとき、窒化シリコン膜３には微細なピン
ホール４が存在するが、通常の電子顕微鏡では、なかな
か検出できないものである。そこで、この窒化シリコン
膜３を、弗硝酸水溶液によって侵食処理する。弗硝酸水
溶液は、その混合比率が、ＨＦ：ＨＮＯ３： Ｈ２Ｏ−
３： ２００ ： ８０の割合であればよ（、これによ
る侵食処理を約１５分間行うと、第２図のように、窒化
シリコン膜３中のピンホール４′は、拡大され、併せて
、極薄の酸化シリコン膜２および直下のシリコン基板１
も侵食される。この状態になると、電子顕微鏡による観
察が容易になり、その侵食処理の条件から、初期のピン
ホールの状態を推定することが可能である。First, as shown in FIG. 1, a silicon nitride film 3 is formed on the surface of a silicon substrate 1 with an extremely thin silicon oxide film 2 interposed therebetween. At this time, minute pinholes 4 are present in the silicon nitride film 3, but they are difficult to detect with a normal electron microscope. Therefore, this silicon nitride film 3 is subjected to an erosion treatment using a fluoronitric acid aqueous solution. The mixing ratio of the fluoronitric acid aqueous solution is HF:HNO3:H2O-
If the ratio is 3:200:80 (if this erosion treatment is carried out for about 15 minutes, the pinhole 4' in the silicon nitride film 3 will be enlarged and the polar Thin silicon oxide film 2 and silicon substrate 1 directly below
is also eroded. In this state, observation using an electron microscope becomes easy, and the initial state of the pinhole can be estimated from the conditions of the erosion treatment.
また、この方法は、完成製品のＭＮＯ３構造不揮発性メ
モリの解析手段としても、容易に利用できる。すなわち
、完成製品では、電極として、アルミニウム膜あるいは
多結晶シリコン膜を用い、かつ、最表部にパシベーショ
ン層を設けているが、あらかじめ、上記電極およびパシ
ベーション層を剥離除去したのち、弗硝酸溶液で侵食処
理することにより、ピンホールの存在を容易に検出する
ことができる。Furthermore, this method can be easily used as a means for analyzing MNO3 structure nonvolatile memory as a finished product. That is, in the finished product, an aluminum film or a polycrystalline silicon film is used as the electrode, and a passivation layer is provided on the outermost surface. By performing the erosion treatment, the presence of pinholes can be easily detected.
発明の効果
本発明によれば、半導体基板上の窒化シリコン膜中に存
在するピンホールを、弗硝酸溶液による侵食処理によっ
て拡大して、容易に顕微鏡観察できるので、この技術を
窒化シリコン膜の形成工程における工程管理手段として
利用し、窒化シリコン膜の形成工程の解析、延いてはそ
の形成工程の安定化を達成することに寄与できる。Effects of the Invention According to the present invention, pinholes existing in a silicon nitride film on a semiconductor substrate can be enlarged by erosion treatment with a fluoronitric acid solution and easily observed under a microscope. It can be used as a process control means in a process, and can contribute to analysis of the silicon nitride film formation process and, by extension, to stabilization of the formation process.
第１図および第２図は本発明実施例を表す工程順断面図
である。
１・・・・・・シリコン基板、２・・・・・・極薄の酸
化シリコン膜、３・・・・・・窒化シリコン膜、４・・
・・・・ピンホール、４′・・・・・・同ピンホール拡
大部。
代理人の氏名 弁理士 中尾敏男 ほか１名／−窒イし
シリコン膜
２− 酸イ已シリコン膜
３−シリコン基板
４− ピンホール
第１図FIGS. 1 and 2 are cross-sectional views showing steps of an embodiment of the present invention. 1...Silicon substrate, 2...Ultra-thin silicon oxide film, 3...Silicon nitride film, 4...
...Pinhole, 4'...Enlarged part of the same pinhole. Name of agent: Patent attorney Toshio Nakao and 1 other person / Nitrogen silicon film 2 Oxide silicon film 3 Silicon substrate 4 Pinhole diagram 1
Claims (1)
て、前記窒化シリコン膜中のピンホールを拡大して検出
する工程をそなえた半導体装置の検査方法。A method for inspecting a semiconductor device, comprising a step of corroding a silicon nitride film on a semiconductor substrate with a fluoronitric acid solution and enlarging and detecting pinholes in the silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262250A JPH0810195B2 (en) | 1986-11-04 | 1986-11-04 | Pinhole inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262250A JPH0810195B2 (en) | 1986-11-04 | 1986-11-04 | Pinhole inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63115331A true JPS63115331A (en) | 1988-05-19 |
| JPH0810195B2 JPH0810195B2 (en) | 1996-01-31 |
Family
ID=17373163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61262250A Expired - Fee Related JPH0810195B2 (en) | 1986-11-04 | 1986-11-04 | Pinhole inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810195B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270542A (en) * | 1997-03-18 | 1998-10-09 | Lg Semicon Co Ltd | Method for separating semiconductor memory element |
| JP2009294044A (en) * | 2008-06-04 | 2009-12-17 | Fuji Electric Device Technology Co Ltd | Method for manufacturing semiconductor device |
| CN105009297A (en) * | 2013-03-12 | 2015-10-28 | 应用材料公司 | Pinhole evaluation method of dielectric films for metal oxide semiconductor TFT |
| CN108169228A (en) * | 2017-11-28 | 2018-06-15 | 中国工程物理研究院电子工程研究所 | A kind of method of accurate discrimination single-crystal silicon carbide Types of Dislocations |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106681A (en) * | 1976-03-05 | 1977-09-07 | Toshiba Corp | Etching method |
| JPS54118890A (en) * | 1978-03-07 | 1979-09-14 | Fuji Electric Co Ltd | Pinhole measuring method of thin film |
| JPS57208155A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Detecting method for pinhole |
| JPS61245538A (en) * | 1985-04-24 | 1986-10-31 | Hitachi Ltd | Partial etching of silicon substrate |
-
1986
- 1986-11-04 JP JP61262250A patent/JPH0810195B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106681A (en) * | 1976-03-05 | 1977-09-07 | Toshiba Corp | Etching method |
| JPS54118890A (en) * | 1978-03-07 | 1979-09-14 | Fuji Electric Co Ltd | Pinhole measuring method of thin film |
| JPS57208155A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Detecting method for pinhole |
| JPS61245538A (en) * | 1985-04-24 | 1986-10-31 | Hitachi Ltd | Partial etching of silicon substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270542A (en) * | 1997-03-18 | 1998-10-09 | Lg Semicon Co Ltd | Method for separating semiconductor memory element |
| JP2009294044A (en) * | 2008-06-04 | 2009-12-17 | Fuji Electric Device Technology Co Ltd | Method for manufacturing semiconductor device |
| CN105009297A (en) * | 2013-03-12 | 2015-10-28 | 应用材料公司 | Pinhole evaluation method of dielectric films for metal oxide semiconductor TFT |
| JP2016514372A (en) * | 2013-03-12 | 2016-05-19 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Pinhole evaluation method of dielectric film for metal oxide semiconductor TFT |
| CN105009297B (en) * | 2013-03-12 | 2019-06-14 | 应用材料公司 | The pin hole appraisal procedure of dielectric film for metal oxide semiconductor films transistor |
| CN108169228A (en) * | 2017-11-28 | 2018-06-15 | 中国工程物理研究院电子工程研究所 | A kind of method of accurate discrimination single-crystal silicon carbide Types of Dislocations |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0810195B2 (en) | 1996-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |