JPS63114049U - - Google Patents

Info

Publication number
JPS63114049U
JPS63114049U JP610687U JP610687U JPS63114049U JP S63114049 U JPS63114049 U JP S63114049U JP 610687 U JP610687 U JP 610687U JP 610687 U JP610687 U JP 610687U JP S63114049 U JPS63114049 U JP S63114049U
Authority
JP
Japan
Prior art keywords
resistor
electrode film
semiconductor
piezoresistors
resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP610687U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP610687U priority Critical patent/JPS63114049U/ja
Publication of JPS63114049U publication Critical patent/JPS63114049U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案実施例の要部を示し、第1図A
は平面図、第1図Bは同B―B断面図である
。第2図乃至第3図は従来例を示し、第2図Aは
断面図、第2図B、第3図Aは要部平面図、第3
図B及び第3図Cは、夫々第3図AにおけるB
―B及びC―C断面図である。 3……半導体ダイアフラム、4a〜4d……ピ
エゾ抵抗、5……配線用電極膜。
Figure 1 shows the main parts of the embodiment of the present invention, and Figure 1A
1 is a plan view, and FIG. 1B is a sectional view taken along the line BB. Figures 2 and 3 show conventional examples, with Figure 2A being a sectional view, Figures 2B and 3A being a plan view of main parts, and Figure 3
Figure B and Figure 3C represent B in Figure 3A, respectively.
-B and CC sectional views. 3... Semiconductor diaphragm, 4a to 4d... Piezoresistor, 5... Wiring electrode film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ダイアフラムに複数のピエゾ抵抗を拡散
により形成すると共に、前記各抵抗に配線用電極
膜を結合した構成において、前記抵抗と電極膜と
の結合面積を各抵抗について全てほゞ同一にした
ことを特徴とする半導体圧力センサ。
A structure in which a plurality of piezoresistors are formed by diffusion on a semiconductor diaphragm, and a wiring electrode film is coupled to each of the resistors, and the bonding area between the resistor and the electrode film is made substantially the same for each resistor. Semiconductor pressure sensor.
JP610687U 1987-01-20 1987-01-20 Pending JPS63114049U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP610687U JPS63114049U (en) 1987-01-20 1987-01-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP610687U JPS63114049U (en) 1987-01-20 1987-01-20

Publications (1)

Publication Number Publication Date
JPS63114049U true JPS63114049U (en) 1988-07-22

Family

ID=30788309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP610687U Pending JPS63114049U (en) 1987-01-20 1987-01-20

Country Status (1)

Country Link
JP (1) JPS63114049U (en)

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