JPS63104300A - 電圧判定回路 - Google Patents
電圧判定回路Info
- Publication number
- JPS63104300A JPS63104300A JP61249850A JP24985086A JPS63104300A JP S63104300 A JPS63104300 A JP S63104300A JP 61249850 A JP61249850 A JP 61249850A JP 24985086 A JP24985086 A JP 24985086A JP S63104300 A JPS63104300 A JP S63104300A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- trp
- test
- voltage
- trn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Test And Diagnosis Of Digital Computers (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61249850A JPS63104300A (ja) | 1986-10-21 | 1986-10-21 | 電圧判定回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61249850A JPS63104300A (ja) | 1986-10-21 | 1986-10-21 | 電圧判定回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63104300A true JPS63104300A (ja) | 1988-05-09 |
JPH0559520B2 JPH0559520B2 (enrdf_load_stackoverflow) | 1993-08-31 |
Family
ID=17199112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61249850A Granted JPS63104300A (ja) | 1986-10-21 | 1986-10-21 | 電圧判定回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63104300A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0689596A (ja) * | 1992-04-22 | 1994-03-29 | Samsung Electron Co Ltd | 並列試験回路 |
US6724679B2 (en) | 2001-10-26 | 2004-04-20 | Renesas Technology Corp. | Semiconductor memory device allowing high density structure or high performance |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107493A (ja) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | テスト回路付きepromメモリ装置 |
JPS6020396A (ja) * | 1983-07-15 | 1985-02-01 | Hitachi Ltd | 信号入力回路 |
JPS60124124A (ja) * | 1983-12-08 | 1985-07-03 | Nec Corp | 入力回路 |
-
1986
- 1986-10-21 JP JP61249850A patent/JPS63104300A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107493A (ja) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | テスト回路付きepromメモリ装置 |
JPS6020396A (ja) * | 1983-07-15 | 1985-02-01 | Hitachi Ltd | 信号入力回路 |
JPS60124124A (ja) * | 1983-12-08 | 1985-07-03 | Nec Corp | 入力回路 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0689596A (ja) * | 1992-04-22 | 1994-03-29 | Samsung Electron Co Ltd | 並列試験回路 |
US6724679B2 (en) | 2001-10-26 | 2004-04-20 | Renesas Technology Corp. | Semiconductor memory device allowing high density structure or high performance |
Also Published As
Publication number | Publication date |
---|---|
JPH0559520B2 (enrdf_load_stackoverflow) | 1993-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4387387B2 (ja) | 集積回路論理デバイス | |
EP0254212B1 (en) | Mos semiconductor circuit | |
US3983412A (en) | Differential sense amplifier | |
US5382847A (en) | Output buffer circuits including voltage compensation | |
US6566914B2 (en) | Sense amplifier having reduced Vt mismatch in input matched differential pair | |
EP0720295B1 (en) | Semiconductor device | |
US6867639B2 (en) | Half voltage generator for use in semiconductor memory device | |
US5986309A (en) | Semiconductor integrated circuit apparatus having a plurality of well bias voltage supply circuits | |
KR940010834B1 (ko) | 반도체 집적회로장치 | |
US5412607A (en) | Semiconductor memory device | |
JPS63104300A (ja) | 電圧判定回路 | |
US5293515A (en) | Amplifier circuit having two inverters | |
KR930011433A (ko) | 반도체 집적회로장치 | |
JPH06334480A (ja) | 半導体集積回路 | |
US20060145749A1 (en) | Bias circuit having reduced power-up delay | |
US4571509A (en) | Output circuit having decreased interference between output terminals | |
US4742253A (en) | Integrated insulated-gate field-effect transistor circuit for evaluating the voltage of a node to be sampled against a fixed reference voltage | |
US5204553A (en) | Field effect transistor circuit | |
Hayashi et al. | ECL-compatible GaAs SRAM circuit technology for high performance computer application | |
JPH0344692B2 (enrdf_load_stackoverflow) | ||
EP0638905A2 (en) | Semiconductor memory integrated circuit | |
KR100329862B1 (ko) | 반도체집적회로장치 | |
JPS6182532A (ja) | インバ−タ回路 | |
JPH05274882A (ja) | 半導体記憶装置 | |
KR100318465B1 (ko) | 반도체장치의접지전위클램프회로 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |