JPS63104300A - 電圧判定回路 - Google Patents

電圧判定回路

Info

Publication number
JPS63104300A
JPS63104300A JP61249850A JP24985086A JPS63104300A JP S63104300 A JPS63104300 A JP S63104300A JP 61249850 A JP61249850 A JP 61249850A JP 24985086 A JP24985086 A JP 24985086A JP S63104300 A JPS63104300 A JP S63104300A
Authority
JP
Japan
Prior art keywords
channel
trp
test
voltage
trn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61249850A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559520B2 (OSRAM
Inventor
Masao Nakano
正夫 中野
Takeshi Ohira
大平　壮
Hidenori Nomura
野村　英則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Priority to JP61249850A priority Critical patent/JPS63104300A/ja
Publication of JPS63104300A publication Critical patent/JPS63104300A/ja
Publication of JPH0559520B2 publication Critical patent/JPH0559520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP61249850A 1986-10-21 1986-10-21 電圧判定回路 Granted JPS63104300A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61249850A JPS63104300A (ja) 1986-10-21 1986-10-21 電圧判定回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61249850A JPS63104300A (ja) 1986-10-21 1986-10-21 電圧判定回路

Publications (2)

Publication Number Publication Date
JPS63104300A true JPS63104300A (ja) 1988-05-09
JPH0559520B2 JPH0559520B2 (OSRAM) 1993-08-31

Family

ID=17199112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61249850A Granted JPS63104300A (ja) 1986-10-21 1986-10-21 電圧判定回路

Country Status (1)

Country Link
JP (1) JPS63104300A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689596A (ja) * 1992-04-22 1994-03-29 Samsung Electron Co Ltd 並列試験回路
US6724679B2 (en) 2001-10-26 2004-04-20 Renesas Technology Corp. Semiconductor memory device allowing high density structure or high performance

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107493A (ja) * 1982-12-09 1984-06-21 Ricoh Co Ltd テスト回路付きｅｐｒｏｍメモリ装置
JPS6020396A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 信号入力回路
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107493A (ja) * 1982-12-09 1984-06-21 Ricoh Co Ltd テスト回路付きｅｐｒｏｍメモリ装置
JPS6020396A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 信号入力回路
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689596A (ja) * 1992-04-22 1994-03-29 Samsung Electron Co Ltd 並列試験回路
US6724679B2 (en) 2001-10-26 2004-04-20 Renesas Technology Corp. Semiconductor memory device allowing high density structure or high performance

Also Published As

Publication number Publication date
JPH0559520B2 (OSRAM) 1993-08-31

Similar Documents

Publication Publication Date Title
JP4387387B2 (ja) 集積回路論理デバイス
EP0254212B1 (en) Mos semiconductor circuit
US3983412A (en) Differential sense amplifier
US5382847A (en) Output buffer circuits including voltage compensation
US6566914B2 (en) Sense amplifier having reduced Vt mismatch in input matched differential pair
EP0720295B1 (en) Semiconductor device
US6867639B2 (en) Half voltage generator for use in semiconductor memory device
US5986309A (en) Semiconductor integrated circuit apparatus having a plurality of well bias voltage supply circuits
KR940010834B1 (ko) 반도체 집적회로장치
US5412607A (en) Semiconductor memory device
JPS63104300A (ja) 電圧判定回路
US20060145749A1 (en) Bias circuit having reduced power-up delay
US5293515A (en) Amplifier circuit having two inverters
KR930011433A (ko) 반도체 집적회로장치
JPH06334480A (ja) 半導体集積回路
US4571509A (en) Output circuit having decreased interference between output terminals
US4742253A (en) Integrated insulated-gate field-effect transistor circuit for evaluating the voltage of a node to be sampled against a fixed reference voltage
US5204553A (en) Field effect transistor circuit
Hayashi et al. ECL-compatible GaAs SRAM circuit technology for high performance computer application
JPH0344692B2 (OSRAM)
EP0638905A2 (en) Semiconductor memory integrated circuit
KR100329862B1 (ko) 반도체집적회로장치
JPS6182532A (ja) インバ−タ回路
JPH05274882A (ja) 半導体記憶装置
KR100318465B1 (ko) 반도체장치의접지전위클램프회로

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees