JPS6297329A - ドライエツチング装置 - Google Patents
ドライエツチング装置Info
- Publication number
- JPS6297329A JPS6297329A JP23645585A JP23645585A JPS6297329A JP S6297329 A JPS6297329 A JP S6297329A JP 23645585 A JP23645585 A JP 23645585A JP 23645585 A JP23645585 A JP 23645585A JP S6297329 A JPS6297329 A JP S6297329A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- substrate
- frequency
- cathodes
- active species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- 239000000460 chlorine Substances 0.000 claims abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- 239000002861 polymer material Substances 0.000 claims description 25
- 230000005684 electric field Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 20
- 229910052736 halogen Inorganic materials 0.000 abstract description 5
- 150000002367 halogens Chemical class 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010406 cathode material Substances 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen halides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23645585A JPS6297329A (ja) | 1985-10-24 | 1985-10-24 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23645585A JPS6297329A (ja) | 1985-10-24 | 1985-10-24 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6297329A true JPS6297329A (ja) | 1987-05-06 |
| JPH0457091B2 JPH0457091B2 (enrdf_load_stackoverflow) | 1992-09-10 |
Family
ID=17001000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23645585A Granted JPS6297329A (ja) | 1985-10-24 | 1985-10-24 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297329A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0625874A (ja) * | 1988-11-16 | 1994-02-01 | Haruhisa Kinoshita | ドライプロセス装置 |
| US5735366A (en) * | 1995-09-19 | 1998-04-07 | Aisin Seiki Kabushiki Kaisha | Disk brake rotor exhibiting different modes of vibration on opposite sides during braking |
| US5795452A (en) * | 1989-11-15 | 1998-08-18 | Kokusai Electric Co., Ltd. | Dry process system |
| US6161660A (en) * | 1997-11-05 | 2000-12-19 | Aisin Seiki Kabushiki Kaisha | Rotor for disc brake |
| US6347691B1 (en) | 1999-04-29 | 2002-02-19 | Dr. Ing. H.C.F. Porsche Aktiengesellschaft | Arrangement for preventing the squealing of a disk brake |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194532A (en) * | 1981-05-26 | 1982-11-30 | Nec Corp | Selective etching for organic high molecule coupling substance |
| JPS6056076A (ja) * | 1983-09-08 | 1985-04-01 | Ulvac Corp | スパツタエツチング装置 |
| JPS60130186A (ja) * | 1983-12-17 | 1985-07-11 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
-
1985
- 1985-10-24 JP JP23645585A patent/JPS6297329A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194532A (en) * | 1981-05-26 | 1982-11-30 | Nec Corp | Selective etching for organic high molecule coupling substance |
| JPS6056076A (ja) * | 1983-09-08 | 1985-04-01 | Ulvac Corp | スパツタエツチング装置 |
| JPS60130186A (ja) * | 1983-12-17 | 1985-07-11 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0625874A (ja) * | 1988-11-16 | 1994-02-01 | Haruhisa Kinoshita | ドライプロセス装置 |
| US5795452A (en) * | 1989-11-15 | 1998-08-18 | Kokusai Electric Co., Ltd. | Dry process system |
| US5735366A (en) * | 1995-09-19 | 1998-04-07 | Aisin Seiki Kabushiki Kaisha | Disk brake rotor exhibiting different modes of vibration on opposite sides during braking |
| US6161660A (en) * | 1997-11-05 | 2000-12-19 | Aisin Seiki Kabushiki Kaisha | Rotor for disc brake |
| US6347691B1 (en) | 1999-04-29 | 2002-02-19 | Dr. Ing. H.C.F. Porsche Aktiengesellschaft | Arrangement for preventing the squealing of a disk brake |
| US6467590B2 (en) | 1999-04-29 | 2002-10-22 | Dr. Ing. H.C.F. Porsche Aktiengesellschaft | Arrangement for preventing the squealing of a disk brake |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0457091B2 (enrdf_load_stackoverflow) | 1992-09-10 |
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