JPS6297324A - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPS6297324A JPS6297324A JP23803785A JP23803785A JPS6297324A JP S6297324 A JPS6297324 A JP S6297324A JP 23803785 A JP23803785 A JP 23803785A JP 23803785 A JP23803785 A JP 23803785A JP S6297324 A JPS6297324 A JP S6297324A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- transparent quartz
- infrared ray
- quartz tube
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 239000010453 quartz Substances 0.000 claims description 42
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 239000012495 reaction gas Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 10
- 238000010926 purge Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 description 21
- 239000007789 gas Substances 0.000 description 14
- 230000035882 stress Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23803785A JPS6297324A (ja) | 1985-10-24 | 1985-10-24 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23803785A JPS6297324A (ja) | 1985-10-24 | 1985-10-24 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6297324A true JPS6297324A (ja) | 1987-05-06 |
| JPH0554691B2 JPH0554691B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-13 |
Family
ID=17024231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23803785A Granted JPS6297324A (ja) | 1985-10-24 | 1985-10-24 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297324A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4790092B1 (ja) * | 2010-04-30 | 2011-10-12 | 日本碍子株式会社 | 塗膜乾燥炉 |
| JP2019168669A (ja) * | 2018-03-23 | 2019-10-03 | 北京創▲いく▼科技有限公司 | 加熱部材 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158914A (ja) * | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | 半導体製造装置 |
-
1985
- 1985-10-24 JP JP23803785A patent/JPS6297324A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158914A (ja) * | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | 半導体製造装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4790092B1 (ja) * | 2010-04-30 | 2011-10-12 | 日本碍子株式会社 | 塗膜乾燥炉 |
| WO2011136041A1 (ja) * | 2010-04-30 | 2011-11-03 | 日本碍子株式会社 | 塗膜乾燥炉 |
| US8983280B2 (en) | 2010-04-30 | 2015-03-17 | Ngk Insulators, Ltd. | Coated film drying furnace |
| EP2566295B1 (en) * | 2010-04-30 | 2019-10-16 | NGK Insulators, Ltd. | Coating film drying furnace |
| JP2019168669A (ja) * | 2018-03-23 | 2019-10-03 | 北京創▲いく▼科技有限公司 | 加熱部材 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554691B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0393809B1 (en) | Pressure resistant thermal reactor system for semiconductor processing | |
| US5207573A (en) | Heat processing apparatus | |
| US5493987A (en) | Chemical vapor deposition reactor and method | |
| US6435869B2 (en) | Quartz window having reinforcing ribs | |
| US4533820A (en) | Radiant heating apparatus | |
| US6064800A (en) | Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes | |
| US6153260A (en) | Method for heating exhaust gas in a substrate reactor | |
| US4823735A (en) | Reflector apparatus for chemical vapor deposition reactors | |
| US5370371A (en) | Heat treatment apparatus | |
| US6067931A (en) | Thermal processor for semiconductor wafers | |
| US6566630B2 (en) | Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object | |
| JP3551609B2 (ja) | 熱処理装置 | |
| JPH08264472A (ja) | 半導体装置の製造方法及び半導体製造装置 | |
| JPH08139047A (ja) | 熱処理装置 | |
| JPS60161616A (ja) | 半導体ウエハの赤外線加熱装置 | |
| JPS6297324A (ja) | 気相成長装置 | |
| JPH0982656A (ja) | 縦型熱処理装置 | |
| JPH056858A (ja) | 熱処理装置 | |
| JPS594434A (ja) | 気相反応装置 | |
| JP2003178991A (ja) | 処理チャンバ内のシールを断熱する装置及び方法 | |
| JPS60189927A (ja) | 気相反応容器 | |
| KR0147826B1 (ko) | 종형열처리장치 | |
| JPS61289623A (ja) | 気相反応装置 | |
| JPS60116778A (ja) | 化学蒸着方法及び装置 | |
| US4856458A (en) | Photo CVD apparatus having no ultraviolet light window |