JPS628957B2 - - Google Patents
Info
- Publication number
- JPS628957B2 JPS628957B2 JP54021583A JP2158379A JPS628957B2 JP S628957 B2 JPS628957 B2 JP S628957B2 JP 54021583 A JP54021583 A JP 54021583A JP 2158379 A JP2158379 A JP 2158379A JP S628957 B2 JPS628957 B2 JP S628957B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial
- epitaxial layer
- conductivity type
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158379A JPS55115375A (en) | 1979-02-26 | 1979-02-26 | Light detector element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158379A JPS55115375A (en) | 1979-02-26 | 1979-02-26 | Light detector element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55115375A JPS55115375A (en) | 1980-09-05 |
| JPS628957B2 true JPS628957B2 (https=) | 1987-02-25 |
Family
ID=12059050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2158379A Granted JPS55115375A (en) | 1979-02-26 | 1979-02-26 | Light detector element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55115375A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628648U (https=) * | 1985-06-29 | 1987-01-19 | ||
| JPS6325983A (ja) * | 1986-07-17 | 1988-02-03 | Fujitsu Ltd | 赤外線検知素子の製造方法 |
| GB2248964A (en) * | 1990-10-17 | 1992-04-22 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
| CN110335908B (zh) * | 2019-06-20 | 2020-11-13 | 深圳大学 | 异质结分波段探测器及其制备方法与应用 |
-
1979
- 1979-02-26 JP JP2158379A patent/JPS55115375A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55115375A (en) | 1980-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6657194B2 (en) | Multispectral monolithic infrared focal plane array detectors | |
| US5838053A (en) | Method of forming a cadmium telluride/silicon structure | |
| EP0747972B1 (en) | Solar cell and manufacturing method thereof | |
| JPH02218174A (ja) | 光電変換半導体装置 | |
| EP1038322A1 (en) | High-efficiency solar cell and method for fabrication | |
| JPH03503946A (ja) | 高効率の太陽電池 | |
| Gertner et al. | HgCdTe on sapphire—A new approach to infrared detector arrays | |
| EP0817279A1 (en) | Process for the production of a chalcopyrite structure semiconductor thin film containing a specific dopant | |
| US11851785B2 (en) | Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device | |
| JP2922465B2 (ja) | 薄膜太陽電池の製造方法 | |
| US5189309A (en) | Avalanche photodiode with alinasp cap layer | |
| JPH07122762A (ja) | 薄膜光起電力装置 | |
| JPS628957B2 (https=) | ||
| KR20100085849A (ko) | 고체 촬상 장치, 그 제조 방법 및 촬상 장치 | |
| JP2002324765A (ja) | 鉄シリサイドの成膜方法並びに半導体ウェーハ及び光半導体装置 | |
| Riley et al. | HgCdTe hybrid focal-plane arrays | |
| USH894H (en) | IR detector structure and method of making | |
| JP3181074B2 (ja) | Ｃｕ系カルコパイライト膜の製造方法 | |
| US4366334A (en) | Photovoltaic cell usable as a solar cell | |
| US3982149A (en) | Camera tube having a target with heterojunction | |
| US5497029A (en) | Tin-indium antimonide infrared detector | |
| Koelmans | Application of semiconducting thin films | |
| JP2705594B2 (ja) | 赤外線検出素子 | |
| JP2694487B2 (ja) | 受光素子 | |
| Rappaport | Thin film solar cells and a review of recent results on GaAs |