JPS6287460U - - Google Patents
Info
- Publication number
- JPS6287460U JPS6287460U JP17842785U JP17842785U JPS6287460U JP S6287460 U JPS6287460 U JP S6287460U JP 17842785 U JP17842785 U JP 17842785U JP 17842785 U JP17842785 U JP 17842785U JP S6287460 U JPS6287460 U JP S6287460U
- Authority
- JP
- Japan
- Prior art keywords
- light
- main surface
- back electrode
- photoactive layer
- semiconductor photoactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims 1
- 238000010248 power generation Methods 0.000 claims 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Optical Elements Other Than Lenses (AREA)
Description
図は本考案の一実施例を示す断面図であつて、
１は受光面電極、２は半導体光活性層、３は背面
電極層、３ｂｓは高反射率金属層、４は光電変換
膜、５は透光性絶縁体、を夫々示している。
The figure is a sectional view showing an embodiment of the present invention,
1 is a light-receiving surface electrode, 2 is a semiconductor photoactive layer, 3 is a back electrode layer, 3bs is a high reflectance metal layer, 4 is a photoelectric conversion film, and 5 is a transparent insulator.
Claims (1)
生する半導体光活性層と、背面電極とを積層した
光電変換膜を上記背面電極が当接した状態で透光
性絶縁体の一方の主面に配置した光起電力装置で
あつて、上記透光性絶縁体の一方の主面と当接す
る背面電極の実質的な当接面は少なくとも略可視
光帯域に於いて高い反射率を有する金属層からな
り、該金属層は上記半導体光活性層を透過した入
射光を反射せしめた再び半導体光活性層に導くと
共に、上記透光性絶縁体の他方の主面から入射す
る光を反射せしめる鏡として機能することを特徴
とした光起電力装置。 A photoelectric conversion film, which is a stack of a light-receiving surface electrode, a semiconductor photoactive layer that generates light carriers that contribute to power generation, and a back electrode, is placed on one main surface of the transparent insulator with the back electrode in contact with the photoelectric conversion film. In the photovoltaic device, the substantial contact surface of the back electrode that contacts one main surface of the translucent insulator is made of a metal layer that has a high reflectance at least in a substantially visible light band. The metal layer reflects the incident light that has passed through the semiconductor photoactive layer and guides it back to the semiconductor photoactive layer, and also functions as a mirror that reflects the light that is incident from the other main surface of the transparent insulator. A photovoltaic device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17842785U JPS6287460U (en) | 1985-11-20 | 1985-11-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17842785U JPS6287460U (en) | 1985-11-20 | 1985-11-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6287460U true JPS6287460U (en) | 1987-06-04 |
Family
ID=31120546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17842785U Pending JPS6287460U (en) | 1985-11-20 | 1985-11-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6287460U (en) |
-
1985
- 1985-11-20 JP JP17842785U patent/JPS6287460U/ja active Pending
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